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IXTV110N25TS

型号：

IXTV110N25TS

描述：

TrenchTM功率MOSFET N沟道增强模式额定雪崩[ TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

210 K

下载PDF手册
TrenchTM  
Power MOSFETs  
VDSS = 250V  
ID25 = 110A  
RDS(on) ≤ 24mΩ  
IXTH110N25T  
IXTV110N25TS  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
TO-247 (IXTH)  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D
D (Tab)  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
250  
250  
V
V
VDGR  
PLUS220SMD(IXTV_S)  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IL(RMS)  
TC = 25°C  
External Lead Current Limit  
110  
75  
A
A
G
S
IDM  
TC = 25°C, Pulse Width Limited by TJM  
300  
A
D (Tab)  
IA  
EAS  
TC = 25°C  
TC = 25°C  
25  
1
A
J
PD  
TC = 25°C  
694  
W
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
dv/dt  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
10  
V/ns  
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
TJM  
Tstg  
-55 to +150  
Features  
TL  
1.6mm (0.063in) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z
International Standard Packages  
Avalanche Rated  
TSOLD  
z
z
z
z
Md  
Mounting Torque (to-247)  
1.13/10  
Nm/lb.in.  
N/lb.  
High Current Handling Capability  
Fast Intrinsic Rectifier  
Low RDS(on)  
FC  
Mounting force (PLUS220SMD)  
11..65/2.5..14.6  
Weight  
TO-247  
PLUS220SMD  
6
4
g
g
Advantages  
z
Symbol  
Test Conditions  
Characteristic Values  
Easy to Mount  
Space Savings  
High Power Density  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
250  
3.0  
Typ.  
Max.  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
5.0  
±200 nA  
μA  
V
Applications  
IDSS  
5
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
z
TJ = 125°C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
250 μA  
24 mΩ  
z
RDS(on)  
z
z
z
© 2012 IXYS CORPORATION, All Rights Reserved  
DS99904B(05/12)  
IXTH110N25T  
IXTV110N25TS  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
65  
110  
S
Ciss  
Coss  
Crss  
9400  
850  
55  
pF  
pF  
pF  
∅ P  
1
2
3
td(on)  
tr  
td(off)  
tf  
19  
27  
60  
27  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 2Ω (External)  
e
Qg(on)  
Qgs  
157  
40  
nC  
nC  
nC  
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
VGS = 10V, VDS = 0.5 • VDSS, ID = 25A  
Dim.  
Millimeter  
Inches  
Min. Max.  
Qgd  
50  
Min. Max.  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
0.25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
Symbol  
Test Conditions  
Characteristic Values  
∅P 3.55  
3.65  
.140 .144  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
110  
350  
1.2  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IS  
VGS = 0V  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = 55A, VGS = 0V, Note 1  
PLUS220SMD Outline  
trr  
IRM  
QRM  
170  
27  
2.3  
ns  
A
μC  
IF = 55A, -di/dt = 250A/μs,  
VR = 100V, VGS = 0V  
Notes:  
Terminals: 1 - Gate 2,4 - Drain  
3 - Source  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. On through-hole package, RDS(ON) kelvin test contact location must be  
5mm or less from the package body.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH110N25T  
IXTV110N25TS  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
250  
200  
150  
100  
50  
VGS = 10V  
VGS = 10V  
100  
80  
60  
40  
20  
0
8V  
7V  
8V  
7V  
6V  
5.5V  
6V  
5V  
5V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
150  
150  
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 55A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
100  
80  
60  
40  
20  
0
8V  
7V  
VGS = 10V  
6V  
5V  
I D = 110A  
I D = 55A  
-50  
-25  
0
25  
50  
75  
100  
125  
0
1
2
3
4
5
6
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 55A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
External Lead Current Limit  
TJ = 125ºC  
TJ = 25ºC  
0
50  
100  
ID - Amperes  
150  
200  
250  
-50  
-25  
0
25  
50  
75  
100  
125  
TC - Degrees Centigrade  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXTH110N25T  
IXTV110N25TS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
TJ = - 40ºC  
25ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
125ºC  
60  
60  
40  
40  
20  
20  
0
0
3.4  
3.8  
4.2  
4.6  
5.0  
5.4  
5.8  
6.2  
0
20  
40  
60  
80  
100  
120  
140  
160  
160  
10  
VGS - Volts  
ID - Amperes  
Fig. 10. Gate Charge  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
300  
250  
200  
150  
100  
50  
10  
9
8
7
6
5
4
3
2
1
0
VDS = 125V  
I
I
D = 25A  
G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1
= 1 MHz  
f
C
C
iss  
0.1  
oss  
0.01  
0.001  
C
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTH110N25T  
IXTV110N25TS  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
30  
28  
26  
24  
22  
20  
32  
30  
28  
26  
24  
22  
20  
18  
RG = 2ꢀ, VGS = 15V  
VDS = 125V  
RG = 2Ω, VGS = 15V  
DS = 125V  
V
TJ = 25ºC  
I D = 110A  
I D = 55A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
120  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
38  
74  
70  
66  
62  
58  
54  
50  
50  
45  
40  
35  
30  
25  
20  
31  
tf  
td(off) - - - -  
tr  
TJ = 125ºC, VGS = 15V  
DS = 125V  
td(on)  
- - - -  
34  
30  
26  
22  
18  
14  
29  
27  
25  
23  
21  
19  
RG = 2ꢀ, VGS = 15V  
DS = 125V  
V
V
I D = 55A  
I D = 110A, 55A  
I D = 110A  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
2
3
4
5
6
7
8
9
10  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
32  
30  
28  
26  
24  
22  
20  
100  
90  
80  
70  
60  
50  
40  
110  
90  
70  
50  
30  
10  
240  
200  
160  
120  
80  
t f  
td(off) - - - -  
tf  
RG = 2ꢀ, VGS = 15V  
DS = 125V  
td(off) - - - -  
TJ = 125ºC, VGS = 15V  
DS = 125V  
I D = 55A, 110A  
V
V
TJ = 25ºC  
TJ = 125ºC  
TJ = 25ºC  
TJ = 125ºC  
40  
2
3
4
5
6
7
8
9
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
110  
120  
ID - Amperes  
RG - Ohms  
© 2012 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_110N25T(8W)5-14-12-B  
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