IXTH30N50L2 IXTQ30N50L2
IXTT30N50L2
Symbol
Test Conditions
Characteristic Values
TO-247 (IXTH) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
9
12
15
S
Ciss
Coss
Crss
8100
530
pF
pF
pF
∅ P
1
2
3
115
RGi
Integrated gate input resistor
3.5
Ω
td(on)
tr
td(off)
tf
35
117
94
ns
ns
ns
ns
Resistive Switching Times
e
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
RG = 0Ω (External)
40
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Qg(on)
Qgs
240
58
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
135
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.31 °C/W
°C/W
(TO-247, TO-3P)
0.25
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
Safe Operating Area Specification
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Symbol
SOA
Test Conditions
Min.
Typ.
Max.
VDS = 400V, ID = 0.5A, TC = 75°C, tp = 2s
200
W
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
TO-3P (IXTQ) Outline
IS
VGS = 0V
30
A
A
ISM
VSD
trr
Repetitive, pulse width limited by TJM
IF = IS, VGS = 0V, Note 1
IF = IS, -di/dt = 100A/μs, VR = 100V
120
1.5
V
500
ns
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
TO-268 (IXTT) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
