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IXTQ90N15T

型号：

IXTQ90N15T

描述：

初步的技术资料沟槽栅功率MOSFET N沟道增强模式[ Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

198 K

下载PDF手册
Preliminary Technical Information  
IXTA90N15T  
IXTH90N15T  
IXTP90N15T  
IXTQ90N15T  
VDSS = 150V  
Trench Gate  
Power MOSFET  
ID25  
=
90A  
RDS(on)  
≤
20mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263
Symbol  
Test Conditions  
Maximum Ratings  
G
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
(TAB)  
(TAB)  
(TAB)  
TO-247 (IXTH)  
VGSM  
± 30  
V
ID25  
ILRMS  
IDM  
TC = 25°C *  
90  
75  
250  
A
A
A
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
IA  
EAS  
TC  
TC  
=
=
25°C  
25°C  
4
750  
A
μJ  
TO-220 (IXTP)  
dV/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
10  
V/ns  
W
G
D
S
455  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TO-3P (IXTQ)  
TL  
TSOLD  
1.6mm (0.062 in.) from case for 10s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G
D
S
(TAB)  
Md  
FC  
Mounting Torque(TO-220,TO-3P,TO-247)  
1.13/10  
Nm/lb.in.  
N/lb.  
Mounting Force (TO-263)  
10..65/2.2..14.6  
Weight  
TO-263  
2.5  
g
G = Gate  
D = Drain  
TO-220  
TO-3P  
TO-247  
3
5.5  
6
g
g
g
S = Source  
TAB = Drain  
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 1mA  
VGS = ± 20V, VDS = 0V  
150  
V
V
Applications  
z DC-DC converters  
z Battery chargers  
2.5  
4.5  
± 200 nA  
μA  
z Switched-mode and resonant-mode  
power supplies  
IDSS  
VDS = VDSS  
VGS = 0V  
5
z DC choppers  
TJ = 150°C  
250 μA  
z AC motor control  
z Uninterruptible power supplies  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
17  
20 mΩ  
DS99857(08/07)  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA90N15T IXTH90N15T  
IXTP90N15T IXTQ90N15T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10V, ID = 0.5 • ID25, Note 1  
40  
69  
S
Ciss  
Coss  
Crss  
4100  
560  
92  
pF  
pF  
pF  
VGS = 0V, VDS = 25V, f = 1MHz  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
24  
22  
ns  
ns  
RG = 3.3Ω (External)  
44  
19  
ns  
ns  
Qg(on)  
Qgs  
80  
20  
20  
nC  
nC  
nC  
VGS= 10V, VDS = 0.5 • VDSS, ID = 25A  
Qgd  
RthJC  
RthCH  
0.33 °C/W  
TO-220  
TO-3P, TO-263, TO-247  
0.25  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
90  
A
A
ISM  
VSD  
trr  
Repetitive  
300  
1.2  
IF = 50A, VGS = 0V, Note 1  
V
IF =45A, -di/dt = 250A/μs  
110  
ns  
VR = 75V, VGS = 0V  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
*: Current may be limited by external terminal current limit.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from data gathered during objective characterizations of preliminary engineering lots; but  
also may yet contain some information supplied during a pre-production design evaluation. IXYS  
reserves the right to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA90N15T IXTH90N15T  
IXTP90N15T IXTQ90N15T  
TO-263 (IXTA) Outline  
TO-247 (IXTH) Outline  
∅ P  
1
2
3
Terminals: 1 - Gate 2 - Drain  
3 - Source  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min.  
Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185  
.087  
.059  
.209  
.102  
.098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040  
.065  
.113  
.055  
.084  
.123  
C
D
E
.4  
20.80  
15.75  
.8  
21.46  
16.26  
.016  
.819  
.610  
.031  
.845  
.640  
e
L
L1  
5.20  
19.81  
5.72  
20.32  
4.50  
0.205 0.225  
.780  
.800  
.177  
∅P  
3.55  
5.89  
3.65  
6.40  
.140  
.144  
Q
0.232 0.252  
.170 .216  
242 BSC  
R
S
4.32  
6.15 BSC  
5.49  
TO-3P (IXTQ) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate 2 - Drain 3 - Source  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA90N15T IXTH90N15T  
IXTP90N15T IXTQ90N15T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
240  
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
7V  
9V  
8V  
7V  
6V  
6V  
5V  
60  
40  
5V  
20  
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
0
2
4
6
8
10  
12  
14  
16  
18  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 45A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
I
= 90A  
D
6V  
5V  
I
= 45A  
D
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 45A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
4.5  
4
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
15V  
GS  
External Lead Current Limit  
- - - -  
T = 175ºC  
J
3.5  
3
2.5  
2
1.5  
1
T = 25ºC  
J
0.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
40  
80  
120  
160  
200  
240  
ID - Amperes  
TC - Degrees Centigrade  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTA90N15T IXTH90N15T  
IXTP90N15T IXTQ90N15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
150ºC  
T
J
= 150ºC  
25ºC  
- 40ºC  
3
3.5  
4
4.5  
5
5.5  
6
0
10 20 30 40 50 60 70 80 90 100 110 120  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
280  
240  
200  
160  
120  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 75V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
40  
T
= 25ºC  
1
J
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.1  
1.2  
1.3  
1.4  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
f = 1 MHz  
C
iss  
C
C
oss  
rss  
10  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
© 2007 IXYS CORPORATION, All rights reserved  
IXTA90N15T IXTH90N15T  
IXTP90N15T IXTQ90N15T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
31  
29  
27  
25  
23  
21  
19  
17  
15  
13  
R
= 3.3  
R = 3.3  
G
Ω
Ω
G
V
V
= 10V  
= 75V  
V
V
= 10V  
GS  
GS  
DS  
T = 25ºC  
J
= 75V  
DS  
I
= 90A  
D
T = 125ºC  
J
I
= 45A  
45  
D
25  
35  
55  
65  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
100  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
23  
65  
t f  
td(off)  
- - - -  
V = 10V  
GS  
t r  
td(on)  
- - - -  
TJ = 125ºC, V = 10V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
22  
21  
20  
19  
18  
17  
16  
60  
55  
50  
45  
40  
35  
30  
R
G
= 3.3  
,
Ω
GS  
V
= 75V  
V
= 75V  
DS  
DS  
I
= 45A  
D
I
= 90A  
D
I
= 45A  
D
I
= 90A  
D
2
4
6
8
10  
12  
14  
16  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
22  
21  
20  
19  
18  
17  
16  
60  
55  
50  
45  
40  
35  
30  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
110  
100  
90  
tf  
R
td(off)  
t f  
td(off)  
- - - -  
- - - -  
VGS = 10V  
= 3.3  
,
T = 125ºC, VGS = 10V  
J
Ω
G
TJ = 125ºC  
VDS = 75V  
VDS = 75V  
80  
I
= 45A, 90A  
D
T = 25ºC  
J
70  
60  
TJ = 25ºC  
50  
TJ = 125ºC  
40  
30  
20  
20  
30  
40  
50  
60  
70  
80  
90  
2
4
6
8
10  
12  
14  
16  
RG - Ohms  
ID - Amperes  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS REF: T_90N15T(5G)8-08-07-A  
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