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IXTP86N20T

型号：

IXTP86N20T

描述：

沟槽栅功率MOSFET N沟道增强型额定雪崩[ Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

191 K

下载PDF手册
IXTA 86N20T  
IXTP 86N20T  
IXTQ 86N20T  
VDSS = 200  
ID25 = 86  
RDS(on) ≤ 29 mΩ  
V
A
Trench Gate  
Power MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 (IXTA)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
200  
200  
V
V
G
S
VGSM  
30  
V
(TAB)  
ID25  
IL  
IDM  
TC = 25°C*  
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
86  
75  
260  
A
A
A
TO-220 (IXTP)  
IAS  
EAS  
TC  
TC  
=
=
25°C  
25°C  
10  
1.0  
A
J
(TAB)  
G
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 3.3 Ω  
3
V/ns  
D
S
TC = 25°C  
480  
W
TO-3P (IXTQ)  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
G
D
S
(TAB)  
Md  
FC  
Mounting  
Mounting Force  
Torque  
(TO-220, TO-3P)  
(TO-263)  
1.13 / 10 Nm/ lb.in.  
10...65/2..5..15  
N/lb.  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
TO-263  
TO-220  
TO-3P  
2
3
5.5  
g
g
g
Features  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
z Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
200  
V
V
VDS = VGS, ID = 1 mA  
3.0  
5.0  
Advantages  
Easy to mount  
Space savings  
High power density  
z
VGS  
=
20 V, VDS = 0 V  
200  
nA  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
1
250  
μA  
μA  
z
TJ = 125°C  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Note 1  
29 mΩ  
DS99664(08/06)  
© 2006 IXYS All rights reserved  
IXTA 86N20T IXTP 86N20T  
IXTQ 86N20T  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ. Max.  
VDS= 10 V; ID = 0.5 ID25, Note 1  
46 78  
S
Ciss  
Coss  
Crss  
4500  
550  
73  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
22  
24  
52  
ns  
ns  
ns  
VGS = 15 V, VDS = 0.5 VDSS, ID = 43 A  
RG = 3.3 Ω (External)  
tf  
29  
ns  
Qg(on)  
Qgs  
90  
30  
23  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS , ID = 25 A  
Qgd  
RthJC  
RthCS  
0.31 °C/W  
TO-220  
TO-3P  
0.50  
0.25  
°C/W  
°C /W  
Source-Drain Diode  
Characteristic Values  
TJ = 25°C unless otherwise specified)  
Symbol  
IS  
Test Conditions  
Min. Typ.  
Max.  
VGS = 0 V  
86  
A
A
ISM  
VSD  
trr  
Repetitive  
260  
1.5  
IF = IS, VGS = 0 V, Note 1  
V
IF =25A, -di/dt = 100 A/μs  
140  
ns  
VR = 100V, VGS = 0 V  
Note 1: Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
*: Current may be limited by externalterminal currnet limit.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6,771,478B2 7,071,537  
7,005,734B2  
7,063,975B2  
IXTA 86N20T IXTP 86N20T  
IXTQ 86N20T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
220  
200  
180  
160  
140  
120  
100  
80  
V
= 10V  
V
= 10V  
8V  
GS  
GS  
8V  
7V  
7V  
6V  
6V  
60  
40  
5V  
5V  
20  
0
0
0
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4 2.6  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 43A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 10V  
GS  
V
= 10V  
GS  
8V  
7V  
6V  
I
= 86A  
D
I
= 43A  
D
5V  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
6
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 43A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.6  
3.4  
3.2  
3
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
External Lead Current Limit  
GS  
T
J
= 125ºC  
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T
= 25ºC  
J
0.8  
20  
40  
60  
80 100 120 140 160 180 200 220  
ID - Amperes  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXTA 86N20T IXTP 86N20T  
IXTQ 86N20T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
160  
140  
120  
100  
80  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
25ºC  
125ºC  
T
J
= -40ºC  
60  
25ºC  
125ºC  
40  
20  
0
3.5  
0.4  
0
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100 120 140 160 180 200  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
240  
210  
180  
150  
120  
90  
V
= 100V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 125ºC  
60  
T
= 25ºC  
J
30  
0
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Resistance  
Fig. 11. Capacitance  
10,000  
1,000  
100  
1.00  
0.10  
0.01  
C
iss  
C
C
oss  
rss  
f = 1 MHz  
5
10  
10  
15  
20  
25  
30  
35  
40  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
Pulse Width - Seconds  
IXTA 86N20T IXTP 86N20T  
IXTQ 86N20T  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
26  
24  
22  
20  
18  
16  
14  
12  
10  
27  
25  
23  
21  
19  
17  
15  
13  
11  
9
R
V
V
= 3.3  
Ω
G
= 15V  
GS  
DS  
T
= 25ºC  
J
= 100V  
R
V
V
= 3.3  
Ω
G
= 15V  
GS  
DS  
= 100V  
I
= 86A  
D
I
= 43A  
D
T
J
= 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
ID - Amperes  
TJ - Degrees Centigrade  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
32  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
66  
64  
62  
60  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
23  
22  
21  
20  
19  
18  
t r  
td(on)  
- - - -  
TJ = 125ºC, V  
= 15V  
GS  
V
= 100V  
DS  
I
= 43A  
D
58  
56  
54  
52  
50  
48  
I
= 86A  
D
I
= 43A  
I
= 86A  
D
D
t f  
R
td(off)  
- - - -  
= 15V  
GS  
= 3.3 , V  
Ω
G
V
= 100V  
DS  
3
4
5
6
7
8
9
10 11 12 13 14 15  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Fig. 18. Resistive Turn-off  
Switching Times vs. Drain Current  
Switching Times vs. Gate Resistance  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
14  
12  
68  
66  
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
70  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
170  
160  
150  
140  
130  
120  
110  
100  
90  
T
= 25ºC  
J
t f  
td(off)  
- - - -  
T
J
= 125ºC, V  
= 15V  
GS  
I
= 43A, 86A  
D
V
= 100V  
DS  
T
J
= 125ºC  
t f  
R
td(off)  
- - - -  
= 3.3 , VGS = 15V  
Ω
G
VDS = 100V  
TJ = 125ºC  
80  
70  
60  
T
J
= 25ºC  
50  
20 25 30 35 40 45 50 55 60 65 70 75 80 85 90  
ID - Amperes  
3
4
5
6
7
8
9
10 11 12 13 14 15  
RG - Ohms  
IXYS REF: T_86N20T (6E) 6-30-06  
© 2006 IXYS All rights reserved  
IXTA 86N20T IXTP 86N20T  
IXTQ 86N20T  
TO-3P (IXTQ) Outline  
TO-263 (IXTA) Outline  
TO-220 (IXTP) Outline  
Pins: 1 - Gate  
2 - Drain  
IXYS reserves the right to change limits, test conditions, and dimensions.  
厂商 型号 描述 页数 下载

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