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IXTP32N20T

型号：

IXTP32N20T

描述：

TrenchTM功率MOSFET N沟道增强型额定雪崩[ TrenchTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

211 K

下载PDF手册
TrenchTM  
Power MOSFET  
VDSS = 200V  
ID25 = 32A  
RDS(on) ≤ 78mΩ  
IXTA32N20T  
IXTP32N20T  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
Fast Intrinsic Rectifier  
G
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-220AB (IXTP)  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
D (Tab)  
= Drain  
ID25  
IDM  
TC = 25°C  
32  
64  
A
A
S
TC = 25°C, Pulse Width Limited by TJM  
IA  
TC = 25°C  
TC = 25°C  
16  
A
G = Gate  
S = Source  
D
Tab = Drain  
EAS  
250  
mJ  
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C  
TC = 25°C  
10  
V/ns  
W
Features  
200  
TJ  
- 55 ... +175  
175  
°C  
°C  
°C  
z International Standard Packages  
z 175°C Operating Temperature  
z Avalanche Rated  
TJM  
Tstg  
- 55 ... +175  
z
Low RDS(on)  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
z Fast Intrinsic Rectifier  
z High Current Handling Capability  
Md  
Mounting Torque (TO-220)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min. Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
200  
3.0  
V
V
Applications  
5.0  
±100 nA  
μA  
z DC-DC Converters  
z Battery Chargers  
IDSS  
3
z Switch-Mode and Resonant-Mode  
Power Supplies  
TJ = 150°C  
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2  
200 μA  
78 mΩ  
z DC Choppers  
z AC Motor Drives  
RDS(on)  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS99959B(10/10)  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA32N20T  
IXTP32N20T  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
TO-263 Outline  
(TJ = 25°C, Unless Otherwise Specified)  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
18  
30  
S
Ciss  
Coss  
Crss  
1760  
212  
31  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
14  
18  
55  
31  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 10Ω (External)  
Qg(on)  
Qgs  
38  
12  
13  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
RthJC  
RthCH  
0.75 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min. Typ.  
Max.  
IS  
VGS = 0V  
32  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
128  
1.2  
TO-220 Outline  
trr  
110  
6.90  
0.38  
ns  
A
IF = 0.5 • ID25, VGS = 0V  
IRM  
QRM  
-di/dt = 100A/μs  
VR = 0.5 • VDSS  
nC  
Notes:  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
2. On through-hole packages, RDS(on) Kelvin test contact location must be  
Pins: 1 - Gate  
2 - Drain  
5mm or less from the package body.  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXTA32N20T  
IXTP32N20T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
32  
28  
24  
20  
16  
12  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 10V  
VGS = 10V  
8V  
8V  
7V  
6V  
7V  
6V  
5V  
5V  
4
0
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
7.0  
60  
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 16A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
32  
28  
24  
20  
16  
12  
8
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.4  
VGS = 10V  
8V  
7V  
VGS = 10V  
I D = 32A  
6V  
5V  
I D = 16A  
4
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 16A Value vs.  
Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
36  
32  
28  
24  
20  
16  
12  
8
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
VGS = 10V  
TJ = 175ºC  
TJ = 25ºC  
4
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
ID - Amperes  
TC - Degrees Centigrade  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA32N20T  
IXTP32N20T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
45  
40  
35  
30  
25  
20  
15  
10  
5
70  
60  
50  
40  
30  
20  
10  
0
TJ = - 40ºC  
TJ = - 40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
65  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
1.2  
40  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 100V  
I D = 16A  
I G = 10mA  
TJ = 150ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100  
10  
1
10,000  
1,000  
100  
RDS(on) Limits  
TJ = 175ºC  
C = 25ºC  
Single Pulse  
= 1 MHz  
f
T
25µs  
C
iss  
100µs  
C
C
oss  
1ms  
10ms  
rss  
10  
10  
100  
VDS - Volts  
1000  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA32N20T  
IXTP32N20T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
RG = 10ꢀ  
VGS = 15V  
TJ = 25ºC  
VDS = 100V  
16A < I D < 32A  
RG = 10Ω  
VGS = 15V  
V
DS = 100V  
TJ = 125ºC  
16  
18  
20  
22  
24  
26  
28  
30  
32  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
45  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
36  
64  
62  
60  
58  
56  
54  
52  
50  
48  
46  
44  
34  
32  
30  
28  
26  
24  
22  
20  
18  
16  
40  
35  
30  
25  
20  
15  
10  
5
t r  
td(on) - - - -  
tf  
td(off) - - - -  
I D = 32A  
TJ = 125ºC, VGS = 15V  
RG = 10ꢀ, VGS = 15V  
VDS = 100V  
VDS = 100V  
I D = 16A  
I D = 16A  
I D = 32A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
10  
14  
18  
22  
26  
30  
34  
38  
42  
46  
50  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
38  
34  
30  
26  
22  
18  
14  
58  
56  
54  
52  
50  
48  
46  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
210  
190  
170  
150  
130  
110  
90  
tf  
td(off) - - - -  
tf  
td(off) - - - -  
RG = 10ꢀ, VGS = 15V  
TJ = 125ºC, VGS = 15V  
VDS = 100V  
I D = 16A  
VDS = 100V  
I D = 32A  
TJ = 25ºC  
70  
TJ = 125ºC  
50  
30  
10  
16  
18  
20  
22  
24  
ID - Amperes  
26  
28  
30  
32  
10  
14  
18  
22  
26  
30  
34  
38  
42  
46  
50  
RG - Ohms  
© 2010 IXYS CORPORATION, All Rights Reserved  
IXTA32N20T  
IXTP32N20T  
Fig. 19. Maximum Transient Thermal Impedance  
1.00  
0.10  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXT_32N20T (3G)4-14-10-A  
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