IXTH 30N60P IXTQ 30N60P IXTT 30N60P
IXTV 30N60P IXTV 30N60PS
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
22
25
S
Ciss
Coss
Crss
5050
540
53
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
29
20
80
25
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 4 Ω (External)
Qg(on)
Qgs
82
28
30
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.23 ° C/W
° C/W
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
VGS = 0 V
Repetitive
30
80
A
ISM
A
V
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
500
4.0
ns
QRM
VR = 100V
µC
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25
º
C
º
C
30
27
24
21
18
15
12
9
60
55
50
45
40
35
30
25
20
15
10
5
V
= 10V
8V
V
= 10V
8V
GS
GS
7V
7V
6.5V
6V
6.5V
6V
5.5V
5V
6
5.5V
5V
3
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12 15 18 21 24 27 30
VD S - Volts
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
