IXTK 150N15P
IXTQ 150N15P
TO-264 (IXTK) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
55
80
S
Ciss
Coss
Crss
5800
1730
400
pF
pF
pF
td(on)
tr
td(off)
tf
30
33
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 3.3 Ω (External)
100
28
Qg(on)
Qgs
190
40
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
105
RthJC
RthCK
RthCS
0.21° C/W
° C/W
TO-3P
0.21
0.15
TO-264
° C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
TO-3P (IXTQ) Outline
VGS = 0 V
Repetitive
150
A
A
V
ISM
340
1.5
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25 A
-di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
2.3
ns
QRM
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
