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IXTQ44P15T

型号：

IXTQ44P15T

描述：

P沟道增强型额定雪崩[ P-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

243 K

下载PDF手册
TrenchPTM  
Power MOSFETs  
VDSS = - 150V  
ID25 = - 44A  
IXTA44P15T  
IXTP44P15T  
IXTQ44P15T  
IXTH44P15T  
RDS(on)  
≤
65mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXTA)  
TO-220AB (IXTP)  
TO-3P (IXTQ)  
G
S
G
D
G
D (Tab)  
S
D
D (Tab)  
S
Tab  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247 (IXTH)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 150  
- 150  
V
V
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±15  
±25  
V
V
G
D
S
D (Tab)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 44  
A
A
-130  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 22  
1
A
J
PD  
TC = 25°C  
298  
W
Features  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
z Extended FBSOA  
z Fast Intrinsic Diode  
z
Md  
Mounting Torque (TO-220, TO-247 & TO-3P)  
1.13/10  
Nm/lb.in.  
Low RDS(ON) and QG  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
z
BVDSS  
VGS(th)  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = - 250μA  
-150  
- 2.0  
V
High-Side Switching  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
Current Regulators  
Battery Charger Applications  
z
- 4.0  
V
z
IGSS  
IDSS  
VGS = ±15V, VDS = 0V  
±100 nA  
z
z
VDS = VDSS, VGS = 0V  
- 15 μA  
- 750 μA  
z
TJ = 125°C  
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
65 mΩ  
DS100023B(01/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = -10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = - 25V, f = 1MHz  
27  
45  
S
Ciss  
Coss  
Crss  
13.4  
675  
183  
nF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
25  
42  
50  
17  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1Ω (External)  
Qg(on)  
Qgs  
175  
65  
nC  
nC  
nC  
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
58  
RthJC  
RthCS  
0.42 °C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.21  
°C/W  
°C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
- 44  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
-176  
-1.3  
trr  
QRM  
IRM  
140  
0.87  
-12.4  
ns  
μC  
A
IF = - 22A, -di/dt = -100A/μs  
VR = - 75V, VGS = 0V  
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
TO-247 Outline  
TO-3P Outline  
Pins: 1 - Gate  
3 - Source  
2,4 - Drain  
1 = Gate  
2 = Drain  
3 = Source  
TO-263 Outline  
TO-220 Outline  
Pins: 1 - Gate  
3 - Source  
2 - Drain  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
-180  
-160  
-140  
-120  
-100  
-80  
-44  
-36  
-28  
-20  
-12  
-4  
VGS = -10V  
VGS = -10V  
- 9V  
- 8V  
- 8V  
- 7V  
- 6V  
- 7V  
-60  
- 6V  
- 5V  
-40  
- 5V  
-20  
0
0
0
0
-0.4  
-0.8  
-1.2  
-1.6  
-2  
-2.4  
-2.8  
0
-5  
-10  
-15  
-20  
-25  
-30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = - 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
-44  
-36  
-28  
-20  
-12  
-4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = -10V  
VGS = -10V  
- 8V  
- 7V  
I D = - 44A  
- 6V  
- 5V  
I D = -22A  
-0.5  
-1  
-1.5  
-2  
-2.5  
-3  
-3.5  
-4  
-4.5  
-5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = - 22A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
-50  
-40  
-30  
-20  
-10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = -10V  
TJ = 125ºC  
TJ = 25ºC  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
-20  
-40  
-60  
-80  
-100  
-120  
-140  
TC - Degrees Centigrade  
ID - Amperes  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
70  
60  
50  
40  
30  
20  
10  
0
-50  
-40  
-30  
-20  
-10  
0
TJ = - 40ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
25ºC  
125ºC  
-3.0  
-3.5  
-4.0  
-4.5  
-5.0  
-5.5  
-6.0  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
-140  
-120  
-100  
-80  
-60  
-40  
-20  
0
-10  
-9  
-8  
-7  
-6  
-5  
-4  
-3  
-2  
-1  
0
VDS = - 75V  
D = - 22A  
I G = -1mA  
I
TJ = 125ºC  
TJ = 25ºC  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
-0.4  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
-1.0  
-1.1  
-1.2  
QG - NanoCoulombs  
VSD - Volts  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
-
100,000  
10,000  
1,000  
100  
1000  
= 1 MHz  
f
RDS(on) Limit  
100  
-
25µs  
100µs  
C
iss  
10  
-
1ms  
C
oss  
10ms  
-
1
100ms  
DC  
TJ = 150ºC  
C
rss  
TC = 25ºC  
Single Pulse  
-
0.1  
0
-5  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-
-
-
1000  
-
1
10  
100  
VDS - Volts  
VDS - Volts  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
Fig. 13. Resistive Turn-on Rise Time vs.  
Junction Temperature  
Fig. 14. Resistive Turn-on Rise Time vs.  
Drain Current  
50  
46  
42  
38  
34  
30  
26  
22  
18  
48  
44  
40  
36  
32  
28  
24  
20  
RG = 1Ω, VGS = -10V  
VDS = - 75V  
TJ = 25ºC  
RG = 1Ω, VGS = -10V  
VDS = - 75V  
I D = - 22A  
I D = - 44A  
TJ = 125ºC  
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
-22  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 16. Resistive Turn-off Switching Times vs.  
Junction Temperature  
250  
200  
150  
100  
50  
100  
20  
65  
60  
55  
50  
45  
40  
t r  
t
d(on) - - - -  
tf  
t
d(off) - - - -  
TJ = 125ºC, VGS = -10V  
VDS = - 75V  
RG = 1Ω, VGS = -10V  
80  
60  
40  
20  
0
19  
18  
17  
16  
15  
VDS = - 75V  
I D = - 44A, - 22A  
I D = - 22A  
I D = - 44A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
TJ - Degrees Centigrade  
RG - Ohms  
Fig. 17. Resistive Turn-off Switching Times vs.  
Drain Current  
Fig. 18. Resistive Turn-off Switching Times vs.  
Gate Resistance  
19  
18  
17  
16  
15  
14  
65  
60  
55  
50  
45  
40  
180  
160  
140  
120  
100  
80  
300  
tf  
t
d(off) - - - -  
270  
240  
210  
180  
150  
120  
90  
TJ = 125ºC  
TJ = 125ºC  
TJ = 125ºC, VGS = -10V  
VDS = - 75V  
I D = - 22A  
TJ = 25ºC  
I D = - 44A  
60  
40  
tf  
t
d(off) - - - -  
TJ = 25ºC  
RG = 1Ω, VGS = -10V  
20  
60  
VDS = - 75V  
0
30  
-22  
-24  
-26  
-28  
-30  
-32  
-34  
-36  
-38  
-40  
-42  
-44  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
RG - Ohms  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXTA44P15T IXTP44P15T  
IXTQ44P15T IXTH44P15T  
Fig. 19. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: T_44P15T(A6)11-05-10-A  
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