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IXTT30N60L2

型号：

IXTT30N60L2

描述：

直线L2功率MOSFET具有扩展FBSOA[ Linear L2 Power MOSFET with extended FBSOA ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

147 K

下载PDF手册
Preliminary Technical Information  
Linear L2TM Power  
MOSFET with extended  
FBSOA  
VDSS = 600V  
ID25 = 30A  
RDS(on) ≤ 240mΩ  
IXTH30N60L2  
IXTQ30N60L2  
IXTT30N60L2  
N-Channel Enhancement Mode  
Avalanche rated  
TO-247  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
(TAB)  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
600  
600  
V
V
VDGR  
TO-3P  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
30  
80  
A
A
G
D
S
(TAB)  
IA  
TC = 25°C  
TC = 25°C  
30  
2
A
J
EAS  
TO-268  
PD  
TC = 25°C  
540  
W
TJ  
-55 to +150  
+150  
°C  
°C  
°C  
TJM  
Tstg  
G
S
-55 to +150  
(TAB)  
TL  
1.6mm (0.063in) from case for 10s  
Plastic body for 10s  
300  
260  
°C  
°C  
TSOLD  
Md  
Mounting torque (TO-247&TO-3P)  
1.13/10  
Nm/lb.in.  
G = Gate  
D
= Drain  
S = Source  
TAB = Drain  
Weight  
TO-247  
TO-3P  
TO-268  
6.0  
5.5  
4.0  
g
g
g
Features  
z Designed for linear operation  
z International standard packages  
z Avalanche rated  
Symbol  
Test Conditions  
Characteristic Values  
z Molding epoxies meet UL 94 V-0  
flammability classification  
(TJ = 25°C, unless otherwise specified)  
Min.  
600  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ±20V, VDS = 0V  
V
V
z Guaranteed FBSOA at 75°C  
4.5  
Applications  
±100 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
300 μA  
z Solid state circuit breakers  
z Soft start controls  
TJ = 125°C  
z Linear amplifiers  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
240 mΩ  
z Programmable loads  
z Current regulators  
© 2009 IXYS CORPORATION, All rights reserved  
DS100101(01/09)  
IXTH30N60L2 IXTQ30N60L2  
IXTT30N60L2  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 (IXTH) Outline  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 10V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
10  
14  
18  
S
Ciss  
Coss  
Crss  
10.7  
600  
130  
nF  
∅ P  
pF  
pF  
1
2
3
td(on)  
tr  
td(off)  
tf  
43  
65  
ns  
ns  
ns  
ns  
Resistive Switching Times  
V
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
123  
43  
RG = 2Ω (External)  
e
Terminals: 1 - Gate  
2 - Drain  
3 - Source  
Tab - Drain  
Qg(on)  
Qgs  
335  
58  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
212  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
RthJC  
RthCS  
0.23 °C/W  
°C/W  
(TO-247&TO-3P)  
0.25  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
Safe Operating Area Specification  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Symbol  
SOA  
Test Conditions  
Min.  
Typ.  
Max.  
VDS = 480V, ID = 0.6A, TC = 75°C, tp = 3s  
288  
W
e
L
L1  
5.20  
5.72 0.205 0.225  
19.81 20.32  
4.50  
.780 .800  
.177  
Source-Drain Diode  
Characteristic Values  
∅P 3.55  
3.65  
.140 .144  
(TJ = 25°C, unless otherwise specified)  
Q
5.89  
6.40 0.232 0.252  
Symbol  
Test Conditions  
Min.  
Typ.  
Max.  
R
S
4.32  
5.49  
.170 .216  
242 BSC  
6.15 BSC  
IS  
VGS = 0V  
30  
A
A
ISM  
VSD  
trr  
Repetitive, pulse width limited by TJM  
IF = IS, VGS = 0V, Note 1  
IF = IS, -di/dt = 100A/μs, VR = 100V  
120  
1.5  
TO-3P (IXTQ) Outline  
V
710  
ns  
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.  
TO-268 (IXTT) Outline  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXTH30N60L2 IXTQ30N60L2  
IXTT30N60L2  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
30  
27  
24  
21  
18  
15  
12  
9
80  
70  
60  
50  
40  
30  
20  
10  
0
VGS = 20V  
14V  
12V  
VGS = 20V  
14V  
12V  
10V  
10V  
9V  
8V  
7V  
9V  
8V  
6
7V  
6V  
6V  
5V  
3
0
0
1
2
3
4
5
6
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 15A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
30  
27  
24  
21  
18  
15  
12  
9
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
VGS = 20V  
12V  
10V  
VGS = 10V  
9V  
8V  
7V  
I D = 30A  
I D = 15A  
6V  
5V  
6
3
0
0
1
2
3
4
5
6
7
8
9
10 11 12 13  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 15A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
35  
30  
25  
20  
15  
10  
5
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
ID - Amperes  
TC - Degrees Centigrade  
© 2009 IXYS CORPORATION, All rights reserved  
IXYS REF: T_30N60L2(8R)01-20-09-A  
IXTH30N60L2 IXTQ30N60L2  
IXTT30N60L2  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
40  
35  
30  
25  
20  
15  
10  
5
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
6
4
2
0
0
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0  
VGS - Volts  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
16  
14  
12  
10  
8
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDS = 300V  
I
I
D = 15A  
G = 10mA  
6
TJ = 125ºC  
4
TJ = 25ºC  
2
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
40 80 120 160 200 240 280 320 360 400 440 480  
QG - NanoCoulombs  
VSD - Volts  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
100,000  
10,000  
1,000  
100  
1.000  
0.100  
0.010  
0.001  
= 1 MHz  
f
C
iss  
C
oss  
C
rss  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VDS - Volts  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH30N60L2 IXTQ30N60L2  
IXTT30N60L2  
Fig. 13. Forward-Bias Safe Operating Area  
Fig. 14. Forward-Bias Safe Operating Area  
@ T = 25ºC  
@ T = 75ºC  
C
C
100.0  
10.0  
1.0  
100.0  
10.0  
1.0  
R
DS(on)  
Limit  
R
Limit  
DS(on)  
25µs  
25µs  
100µs  
100µs  
1ms  
1ms  
10ms  
10ms  
100ms  
DC  
100ms  
DC  
T
T
= 150ºC  
= 25ºC  
T
T
= 150ºC  
= 75ºC  
J
J
C
C
Single Pulse  
Single Pulse  
0.1  
0.1  
10  
100  
1000  
10  
100  
1000  
VDS - Volts  
VDS - Volts  
© 2009 IXYS CORPORATION, All rights reserved  
IXYS REF: T_30N60L2(8R)01-20-09-A  
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