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FZTA92

型号:

FZTA92

描述:

高的击穿电压[ High breakdown voltage ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

1 页

PDF大小:

168 K

                                           
                                            
                                             
                                              
                                               
                                                
                                                
                                                 
                                                  
                                                   
                                                   
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Product specification  
FZTA92  
SOT-223  
Unit: mm  
+0.2  
3.50  
-0.2  
+0.2  
6.50  
-0.2  
Features  
+0.2  
0.90  
-0.2  
+0.1  
3.00  
-0.1  
+0.3  
7.00  
-0.3  
High breakdown voltage  
4
1 Base  
2 Collector  
1
2
3
+0.1  
0.70  
-0.1  
3 Emitter  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IB  
Rating  
-300  
Unit  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
-300  
V
-5  
V
Base Current  
-100  
mA  
mA  
W
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
-500  
Ptot  
2
Tj:Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
IC=-100ìA, IE=0  
Min  
-300  
-300  
-5  
Typ  
Max  
Unit  
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
IC=-1mA, IB=0*  
V
IE=-100ìA, IC=0  
V
VCB=-200V, IE=0  
VEB=-3V, IC=0  
-0.25  
-0.1  
-0.5  
-0.9  
ìA  
ìA  
V
Emitter Cut-Off Current  
IEBO  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
VCE(sat)  
VBE(sat)  
IC=-20mA, IB=-2mA  
IC=-20mA, IB=-2mA  
IC=-1mA, VCE=-10V*  
IC=-10mA, VCE=-10V*  
IC=-30mA, VCE=-10V*  
V
25  
40  
25  
50  
Static Forward Current Transfer Ratio  
hFE  
Transition Frequency  
Output Capacitance  
fT  
IC=-10mA, VCE=-20V,f=20MHz  
VCB=-20V, f=1MHz  
MHz  
pF  
Cobo  
6
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle  
2%  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  
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