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FZT1151A

型号:

FZT1151A

描述:

低饱和电压,高增益[ Low saturation Voltage, High Gain ]

品牌:

TYSEMI[ TY Semiconductor Co., Ltd ]

页数:

1 页

PDF大小:

124 K

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Product specification  
FZT1151A  
SOT-223  
Unit: mm  
+0.2  
+0.2  
Features  
3.50-0.2  
6.50-0.2  
Low saturation Voltage  
+0.2  
High Gain  
0.90-0.2  
+0.1  
3.00-0.1  
+0.3  
7.00-0.3  
4
1 Base  
2 Collector  
1
2
3
+0.1  
3 Emitter  
0.70-0.1  
2.9  
4.6  
4 Collector  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-45  
-40  
-5  
Unit  
V
V
V
Continuous Collector Current  
power dissipation  
-3  
A
PC  
2.5  
150  
W
Junction temperature  
Tj  
Storage temperature  
Tstg  
-55 to +150  
Electrical Characteristics Ta = 25℃  
Parameter  
Collector to base breakdown voltage  
Collector to emitter breakdown voltage  
Emitter to base breakdown voltage  
Collector cut-off current  
Symbol  
Test conditons  
Min  
-45  
-40  
-5.0  
Typ Max  
Unit  
V
VCBO  
VCEO  
VEBO  
ICBO  
IC=-100μA  
IC=-10mA  
V
V
IE=-100μA  
VCB =- 36 V, IE = 0  
VEB=-4V,IC=0  
-100  
-100  
450  
nA  
nA  
Emitter Cut-Off Current  
IEBO  
IC = -10 mA; VCE = -2 V  
IC = -500mA; VCE =- 2V  
IC = -2A; VCE = -2V  
IC =- 1.8A; IB = -70mA  
IC = -3A; IB = -250mA  
270  
250  
180  
DC current gain  
hFE  
800  
300  
-0.26  
-0.3  
V
V
Collector to emitter saturation voltage  
VCE(sat)  
Output capacitance  
Transition frequency  
Cob  
fT  
VCB =-10 V, IE = 0,f=1.0MHz  
IC = -50 mA; VCE =-10V; f = 50 MHz  
40  
pF  
145  
MHz  
Marking  
Marking  
1151A  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  
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