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IXTP64N055T

型号：

IXTP64N055T

描述：

TrenchMV功率MOSFET N沟道EngancementMode额定雪崩[ TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

176 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTP64N055T  
IXTY64N055T  
VDSS = 55  
ID25 = 64  
RDS(on) ≤ 13 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-220 (IXTP)  
D (TAB)  
G
D
S
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
55  
55  
V
V
TO-252 (IXTY)  
VGSM  
Transient  
± 20  
V
G
ID25  
IL  
IDM  
TC = 25°C  
64  
25  
170  
A
A
A
Package Current Limit, RMS  
TO-252  
S
D (TAB)  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
10  
250  
A
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 18 Ω  
3
V/ns  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TC = 25°C  
130  
W
ꢀLow package inductance  
- easy to drive and to protect  
ꢀ175 °C Operating Temperature  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
Advantages  
ꢀ
Easy to mount  
ꢀ
Md  
Mounting torque (TO-220)  
1.13 / 10 Nm/lb.in.  
Space savings  
ꢀ
High power density  
Weight  
TO-220  
TO-252  
3
0.35  
g
g
Applications  
ꢀ
Automotive  
- Motor Drives  
- High Side Switch  
- 12VBattery  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
- ABS Systems  
ꢀ
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 25 μA  
VGS = ± 20 V, VDS = 0 V  
55  
V
V
DC/DC Converters and Off-line UPS  
ꢀ
Primary- Side Switch  
2.0  
4.0  
ꢀ
High Current Switching  
Applications  
± 100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
1
μA  
μA  
TJ = 150°C  
100  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2  
13 mΩ  
DS99498 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTP64N055T  
IXTY64N055T  
Symbol  
Test Conditions  
Characteristic Values  
TO-220 (IXTP) Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 0.5 ID25, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
17  
28  
S
Ciss  
Coss  
Crss  
1420  
255  
68  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
19  
52  
37  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 10 A  
RG = 18Ω (External)  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
Qg(on)  
Qgs  
37  
10  
11  
nC  
nC  
nC  
VGS= 10 V, VDS = 0.5 VDSS, ID = 10 A  
Qgd  
RthJC  
RthCS  
1.15°C/W  
°C/W  
TO-220  
0.5  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic  
Values  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0 V  
64  
170  
1.2  
A
A
ISM  
VSD  
trr  
Repetitive  
Notes:  
1. Pulse test: t ≤ 300 μs, duty cycle  
d ≤ 2 %;  
IF =25 A, VGS = 0 V, Note 1  
V
IF = 25 A, -di/dt = 100 A/μs  
30  
ns  
2. On through-hole packages, RDS(on)  
Kelvin test contact location must be  
5 mm or less from the package body.  
VR = 30 V, VGS = 0 V  
TO-252 (IXTY) Outline  
Dim. Millimeter  
Inches  
Min. Max. Min.  
Max.  
PRELIMINARYTECHNICAL  
INFORMATION  
A
2.19 2.38 0.086 0.094  
A1 0.89 1.14 0.035 0.045  
A2  
b
0
0.13  
0
0.005  
0.64 0.89 0.025 0.035  
b1  
b2  
0.76 1.14 0.030 0.045  
5.21 5.46 0.205 0.215  
The product presented herein is under  
development. The Technical Specifica-  
tions offered are derived from data  
gathered during objective characteriza-  
tions of preliminary engineering lots; but  
also may yet contain some information  
supplied during a pre-production design  
evaluation. IXYS reserves the right to  
change limits, test conditions, and  
dimensions without notice.  
c
c1  
0.46 0.58 0.018 0.023  
0.46 0.58 0.018 0.023  
D
5.97 6.22 0.235 0.245  
D1 4.32 5.21 0.170 0.205  
6.35 6.73 0.250 0.265  
E1 4.32 5.21 0.170 0.205  
1 Anode  
2 NC  
3 Anode  
4 Cathode  
E
e
e1  
2.28 BSC  
4.57 BSC  
0.090 BSC  
0.180 BSC  
H
L
9.40 10.42 0.370 0.410  
0.51 1.02 0.020 0.040  
L1  
L2  
L3  
0.64 1.02 0.025 0.040  
0.89 1.27 0.035 0.050  
2.54 2.92 0.100 0.115  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTP64N055T  
IXTY64N055T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
200  
180  
160  
140  
120  
100  
80  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
V
= 10V  
9V  
GS  
9V  
8V  
8V  
7V  
7V  
6V  
60  
6V  
5V  
40  
5V  
20  
0
0
0
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 32A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
2.4  
2.2  
2
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
V
= 10V  
GS  
V
= 10V  
GS  
9V  
8V  
1.8  
1.6  
1.4  
1.2  
1
7V  
6V  
I
= 64A  
D
I
= 32A  
D
5V  
0.8  
0.6  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
2
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 32A Value  
vs. Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
3.4  
3.2  
3
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
GS  
15V - - - -  
T = 175ºC  
J
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
T = 25ºC  
J
0.8  
0.6  
20  
40  
60  
80  
100  
120  
140  
160  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXTP64N055T  
IXTY64N055T  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
40  
35  
30  
25  
20  
15  
10  
5
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= - 40ºC  
T
J
= - 40ºC  
25ºC  
150ºC  
25ºC  
150ºC  
0
3
3.5  
4
4.5  
5
5.5  
6
6.5  
7
7.5  
1.6  
40  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 27.5V  
DS  
I
I
= 10A  
D
G
= 1mA  
60  
T
J
= 150ºC  
40  
T
= 25ºC  
J
20  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
0
5
10  
15  
20  
25  
30  
35  
40  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
10.00  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
f = 1 MHz  
C
C
iss  
oss  
C
rss  
10  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTP64N055T  
IXTY64N055T  
Fig. 14. Resistive Turn-on  
Rise Time vs. Drain Current  
Fig. 13. Resistive Turn-on  
Rise Time vs. Junction Temperature  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
65  
60  
55  
50  
45  
40  
35  
30  
25  
20  
R
V
V
= 18  
Ω
G
T
= 25ºC  
J
= 10V  
GS  
DS  
= 27.5V  
R
V
V
= 18  
Ω
G
= 10V  
GS  
DS  
= 27.5V  
I
= 30A  
D
I
= 10A  
D
T
J
= 125ºC  
24  
10  
12  
14  
16  
18  
20  
22  
26  
28  
30  
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
30  
28  
26  
24  
22  
20  
18  
16  
42  
40  
38  
36  
34  
32  
30  
28  
26  
54  
t r  
td(on) - - - -  
50  
46  
42  
38  
34  
30  
26  
22  
TJ = 125ºC, VGS = 10V  
VDS = 27.5V  
ID = 30A  
I
= 10A  
D
I
= 10A  
D
ID = 30A  
t f  
R
td(off) - - - -  
= 18 , V  
= 10V  
GS  
Ω
G
V
= 27.5V  
DS  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
25  
35  
45  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
40  
38  
36  
34  
32  
30  
28  
26  
58  
54  
50  
46  
42  
38  
34  
30  
120  
110  
100  
90  
130  
t f  
R
td(off)  
- - - -  
t f  
td(off)  
- - - -  
120  
110  
100  
90  
= 18 , VGS = 10V  
G
Ω
TJ = 125ºC, VGS = 10V  
VDS = 27.5V  
VDS = 27.5V  
80  
ID = 10A  
70  
80  
TJ = 125ºC  
60  
70  
I D = 30A  
50  
60  
40  
50  
30  
40  
T
J
= 25ºC  
20  
30  
15  
20  
25  
30  
35  
40  
45  
50  
55  
60  
10  
12  
14  
16  
18  
20  
22  
24  
26  
28  
30  
RG - Ohms  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXYS REF: T_64N055T (1V) 7-14-06.xls  
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