请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTV18N60P

型号：

IXTV18N60P

描述：

PolarHVTM功率MOSFET N沟道增强型额定雪崩[ PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

176 K

下载PDF手册
PolarHVTM  
Power MOSFET  
IXTQ 18N60P  
IXTV 18N60P  
IXTV 18N60PS  
VDSS = 600 V  
ID25 = 18 A  
RDS(on) ≤ 420 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGS  
Continuous  
Tranisent  
30  
40  
V
V
G
VGSM  
D (TAB)  
D
S
ID25  
IDM  
TC = 25°C  
18  
54  
A
A
TC = 25°C, pulse width limited by TJM  
PLUS220 (IXTV)  
IAR  
TC = 25°C  
18  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
G
D (TAB)  
D
S
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 5 Ω  
,
10  
V/ns  
TC = 25°C  
360  
W
PLUS220SMD (IXTV...S)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
D (TAB)  
Md  
Mounting torque  
TO-3P  
(TO-3P)  
1.13/10 Nm/lb.in.  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
6
4
g
g
PLUS220 & PLUS220SMD  
Features  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250μA  
VGS = 30 V, VDS = 0  
600  
V
V
3.0  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
Advantages  
TJ = 125°C  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
420 mΩ  
Easy to mount  
Space savings  
High power density  
z
z
DS99324E(03/06)  
© 2006 IXYS All rights reserved  
IXTQ 18N60P  
IXTV 18N60P IXTV 18N60PS  
Symbol  
gfs  
Test Conditions  
Characteristic Values  
TO-3P (IXTQ) Outline  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VDS = 20 V; ID = 0.5 ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
9
16  
S
Ciss  
Coss  
Crss  
2500  
278  
23  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
21  
22  
62  
22  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25  
RG = 5 Ω (External)  
Qg(on)  
Qgs  
49  
15  
17  
nC  
nC  
nC  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
Qgd  
RthJC  
RthCS  
0.35 °C/W  
°C/W  
(TO-3P, PLUS220)  
0.21  
Source-Drain Diode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
Symbol  
IS  
Test Conditions  
VGS = 0 V  
Repetitive  
18  
54  
A
ISM  
A
V
PLUS220 (IXTV) Outline  
VSD  
IF = IS, VGS = 0 V,  
1.5  
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %  
IF = 18A, -di/dt = 100 A/μs  
VR = 100V  
trr  
500  
ns  
PLUS220SMD (IXTV_S) Outline  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844  
one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405B2 6,759,692  
6,710,463 6,771,478 B2  
IXTQ 18N60P  
IXTV 18N60P IXTV 18N60PS  
Fig. 2. Output Characteristics  
Fig. 1. Output Characteristics  
@ 25  
º
C
@ 125 C  
º
18  
16  
14  
12  
10  
8
40  
35  
30  
25  
20  
15  
10  
5
V = 10V  
GS  
V
GS  
= 10V  
8V  
8V  
7V  
7V  
6V  
5V  
6V  
6
4
5V  
2
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12 15 18 21 24 27 30  
VD S - Volts  
VD S - Volts  
Fig. 3. Output Characteristics  
@ 125  
Fig. 4. RDS(on Normalized to 0.5 ID25  
)
º
C
Value vs. Junction Temperature  
3.1  
2.8  
2.5  
2.2  
1.9  
1.6  
1.3  
1
18  
16  
14  
12  
10  
8
V
GS  
= 10V  
7V  
V
GS  
= 10V  
6V  
5V  
I
= 18A  
D
I
= 9A  
D
6
4
0.7  
0.4  
2
0
-50  
-25  
0
25  
50  
75  
100 125 150  
0
2
4
6
8
10  
12  
14  
16  
18  
TJ - Degrees Centigrade  
VD S - Volts  
Fig. 5. RDS(on) Normalized to  
0.5 ID25 Value vs. ID  
Fig. 6. Drain Current vs. Case  
Temperature  
3.2  
3
20  
18  
16  
14  
12  
10  
8
V
GS  
= 10V  
T = 125 C  
º
J
2.8  
2.6  
2.4  
2.2  
2
1.8  
1.6  
1.4  
1.2  
1
6
4
T = 25 C  
º
J
2
0.8  
0
0
5
10  
15  
20  
25  
30  
35  
40  
45  
-50  
-25  
0
25  
50  
75  
100 125 150  
I D - Amperes  
TC - Degrees Centigrade  
© 2006 IXYS All rights reserved  
IXTQ 18N60P  
IXTV 18N60P IXTV 18N60PS  
Fig. 8. Transconductance  
Fig. 7. Input Admittance  
27  
24  
21  
18  
15  
12  
9
30  
27  
24  
21  
18  
15  
12  
9
º
T = -40 C  
J
º
25 C  
º
125 C  
º
T = 125 C  
J
º
25 C  
º
-40 C  
6
6
3
3
0
0
0
3
6
9
12 15 18 21 24 27 30  
I D - Amperes  
3.5  
4
4.5 5  
VG S - Volts  
5.5  
6
6.5  
Fig. 9. Source Current vs.  
Source-To-Drain Voltage  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
60  
50  
40  
30  
20  
10  
0
V
= 300V  
DS  
I
I
= 9A  
D
G
= 10mA  
º
T = 125 C  
J
º
T = 25 C  
J
0
5
10 15 20 25 30 35 40 45 50  
Q G - nanoCoulombs  
0.4  
0.5  
0.6  
0.7 0.8  
VS D - Volts  
0.9  
1
1.1  
Fig. 12. Forward-Bias  
Safe Operating Area  
Fig. 11. Capacitance  
100  
10  
1
10000  
1000  
100  
f = 1MHz  
C
C
iss  
R
Limit  
DS(on)  
25µs  
oss  
100µs  
1ms  
10ms  
C
rss  
T = 150ºC  
J
DC  
T
= 25ºC  
C
10  
0
5
10  
15  
20  
VD S - Volts  
25  
30  
35  
40  
10  
100  
VD S - Volts  
1000  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTQ 18N60P  
IXTV 18N60P IXTV 18N60PS  
Fig. 13. Maximum Transient Thermal Resistance  
1.000  
0.100  
0.010  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2006 IXYS All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.159530s