请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXTQ160N10T

型号：

IXTQ160N10T

描述：

初步的技术资料TrenchMVTM功率MOSFET[ Preliminary Technical Information TrenchMVTM Power MOSFET ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

192 K

下载PDF手册
Preliminary Technical Information  
TrenchMVTM  
Power MOSFET  
IXTH160N10T  
IXTQ160N10T  
VDSS = 100  
ID25 = 160  
RDS(on) ≤ 7.0 mΩ  
V
A
N-ChannelEnhancementMode  
AvalancheRated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
G
(TAB)  
D
S
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C; RGS = 1 MΩ  
100  
100  
V
V
VGSM  
Transient  
± 30  
V
TO-3P (IXTQ)  
ID25  
ILRMS  
IDM  
TC = 25°C  
160  
75  
430  
A
A
A
Lead Current Limit, RMS  
TC = 25°C, pulse width limited by TJM  
IAR  
EAS  
TC = 25°C  
TC = 25°C  
25  
500  
A
mJ  
G
D
dv/dt  
PD  
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS  
TJ ≤ 175°C, RG = 5 Ω  
3
V/ns  
(TAB)  
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TC = 25°C  
430  
W
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
ꢀUltra-low On Resistance  
ꢀUnclamped Inductive Switching (UIS)  
rated  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 seconds  
300  
260  
°C  
°C  
ꢀLow package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
1.13 / 10 Nm/lb.in.  
g ꢀ175 °C Operating Temperature  
Weight  
TO-3P  
TO-247  
5.5  
6
g
Advantages  
ꢀ
Easy to mount  
ꢀ
Space savings  
ꢀ
High power density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C unless otherwise specified)  
Min. Typ.  
Max.  
Applications  
ꢀ
Automotive  
V
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250 μA  
VGS = ± 20 V, VDS = 0 V  
100  
- Motor Drives  
- 42V Power Bus  
V
2.5  
4.5  
- ABS Systems  
± 200  
nA  
ꢀ
ꢀ
DC/DC Converters and Off-line UPS  
Primary Switch for 24V and 48V  
Systems  
Distributed Power Architechtures  
and VRMs  
Electronic Valve Train Systems  
High Current Switching  
Applications  
IDSS  
VDS = VDSS  
VGS = 0 V  
5
μA  
μA  
TJ = 150°C  
250  
ꢀ
RDS(on)  
VGS = 10 V, ID = 25 A, Notes 1, 2  
5.8  
7.0 mΩ  
ꢀ
ꢀ
ꢀ
High Voltage Synchronous Recifier  
DS99710 (11/06)  
© 2006 IXYS CORPORATION All rights reserved  
IXTH160N10T  
IXTQ160N10T  
Symbol  
Test Conditions  
Characteristic Values  
TO-247 AD Outline  
(TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
gfs  
VDS= 10 V; ID = 60 A, Note 1  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
65  
102  
S
Ciss  
Coss  
Crss  
6600  
880  
pF  
pF  
pF  
1
2
3
135  
td(on)  
tr  
td(off)  
tf  
Resistive Switching Times  
VGS = 10 V, VDS = 0.5 VDSS, ID = 25 A  
RG = 5 Ω (External)  
33  
61  
49  
42  
ns  
ns  
ns  
ns  
Terminals: 1 - Gate  
3 - Source  
2 - Drain  
Tab - Drain  
Qg(on)  
Qgs  
132  
37  
nC  
nC  
nC  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
Qgd  
40  
RthJC  
RthCH  
0.35°C/W  
°C/W  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
0.25  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
Source-Drain Diode  
e
L
L1  
5.20  
19.81 20.32  
4.50  
5.72 0.205 0.225  
Symbol  
Test Conditions  
Characteristic Values  
.780 .800  
.177  
TJ = 25°C unless otherwise specified)  
Min.  
Typ.  
Max.  
∅P 3.55  
3.65  
.140 .144  
IS  
VGS = 0 V  
160  
A
A
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
ISM  
VSD  
trr  
Pulse width limited by TJM  
IF = 25 A, VGS = 0 V, Note 1  
430  
1.0  
V
TO-3P (IXTQ) Outline  
IF = 25 A, -di/dt = 100 A/μs  
100  
ns  
VR = 50 V, VGS = 0 V  
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;  
2. On through-hole packages, RDS(on) Kelvin test contact  
location must be 5 mm or less from the package body.  
Pins: 1 - Gate  
2 - Drain  
3 - Source 4, TAB - Drain  
PRELIMINARYTECHNICALINFORMATION  
The product presented herein is under development. The Technical Specifications  
offered are derived from data gathered during objective characterizations of preliminary  
engineering lots; but also may yet contain some information supplied during a pre-  
production design evaluation. IXYS reserves the right to change limits, test conditions,  
and dimensions without notice.  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETs andIGBTsarecovered by  
oneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123B1  
6,306,728 B1  
6,404,065B1  
6,534,343  
6,583,505  
6,683,344  
6,710,405B2  
6,710,463  
6,727,585  
6,759,692  
6771478B2  
7,005,734B2  
7,063,975B2  
7,071,537  
IXTH160N10T  
IXTQ160N10T  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
300  
275  
250  
225  
200  
175  
150  
125  
100  
75  
V
= 10V  
V
= 10V  
GS  
GS  
9V  
8V  
9V  
8V  
7V  
7V  
60  
6V  
5V  
40  
6V  
2
50  
20  
25  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
0
1
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 160A Value  
vs. Junction Temperature  
Fig. 3. Output Characteristics  
@ 150ºC  
160  
140  
120  
100  
80  
2.8  
2.6  
2.4  
2.2  
2
V
= 10V  
8V  
GS  
V
= 10V  
GS  
I
= 160A  
D
7V  
I
= 80A  
D
1.8  
1.6  
1.4  
1.2  
1
6V  
60  
40  
20  
5V  
0.8  
0.6  
0
0
0.4  
0.8  
1.2  
1.6  
2
2.4  
2.8  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
TJ - Degrees Centigrade  
VDS - Volts  
Fig. 5. RDS(on) Normalized to ID = 80A Value  
vs. Drain Current  
Fig. 6. Drain Current vs. Case Temperature  
3.2  
3
140  
120  
100  
80  
V
= 10V  
External Lead Current Limit for TO-263 (7-Lead)  
GS  
15V - - - -  
2.8  
2.6  
2.4  
2.2  
2
T
J
= 175ºC  
External Lead Current Limit for TO-3P, TO-220, & TO-263  
1.8  
1.6  
1.4  
1.2  
1
60  
40  
T
J
= 25ºC  
20  
0.8  
0.6  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
50  
100  
150  
200  
250  
300  
TC - Degrees Centigrade  
ID - Amperes  
© 2006 IXYS CORPORATION All rights reserved  
IXTH160N10T  
IXTQ160N10T  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
200  
180  
160  
140  
120  
100  
80  
140  
120  
100  
80  
T
J
= - 40ºC  
25ºC  
150ºC  
60  
T
J
= 150ºC  
60  
40  
25ºC  
- 40ºC  
40  
20  
20  
0
0
3.5  
4
4.5  
5
5.5  
6
6.5  
7
0
20  
40  
60  
80  
100 120 140 160 180 200 220  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of  
Intrinsic Diode  
Fig. 10. Gate Charge  
10  
9
8
7
6
5
4
3
2
1
0
300  
250  
200  
150  
100  
50  
V
= 50V  
DS  
I
I
= 25A  
D
G
= 10mA  
T
J
= 150ºC  
T
J
= 25ºC  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1
1.1  
1.2  
1.3  
1.4  
0
20  
40  
60  
80  
100  
120  
140  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal  
Impedance  
Fig. 11. Capacitance  
1.00  
0.10  
0.01  
10,000  
1,000  
100  
C
C
iss  
f = 1 MHz  
oss  
C
rss  
0.0001  
0.001  
0.01  
0.1  
1
10  
0
5
10  
15  
20  
25  
30  
35  
40  
VDS - Volts  
Pulse Width - Seconds  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXTH160N10T  
IXTQ160N10T  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Drain Current  
Rise Time vs. Junction Temperature  
90  
80  
70  
60  
50  
40  
30  
20  
70  
65  
60  
55  
50  
45  
40  
35  
30  
R
V
V
= 5  
Ω
G
T
J
= 25ºC  
= 10V  
= 50V  
GS  
DS  
R
V
V
= 5  
Ω
G
= 10V  
GS  
DS  
= 50V  
I
= 50A  
D
T
= 125ºC  
J
I
= 25A  
D
25  
35  
45  
55  
65  
75  
85  
95  
105 115 125  
25  
30  
35  
40  
45  
50  
TJ - Degrees Centigrade  
ID - Amperes  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
170  
65  
60  
55  
50  
45  
40  
35  
30  
90  
120  
115  
110  
105  
100  
95  
t f  
R
t
d(off) - - - -  
t r  
td(on)  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
35  
30  
- - - -  
150  
130  
110  
90  
= 5 , V = 10V  
GS  
Ω
TJ = 125ºC, V  
= 10V  
G
GS  
V = 50V  
DS  
V
= 50V  
DS  
I
I
= 25A  
= 50A  
D
D
I
= 50A  
D
I
= 25A  
D
90  
85  
80  
I
= 25A  
D
D
70  
75  
70  
50  
65  
I
= 50A  
45  
30  
60  
4
6
8
10  
12  
14  
16  
18  
20  
25  
35  
55  
65  
75  
85  
95 105 115 125  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
Fig. 17. Resistive Turn-off  
Switching Times vs. Drain Current  
44  
43  
42  
41  
40  
39  
38  
80  
77  
74  
71  
68  
65  
62  
59  
56  
53  
50  
47  
44  
140  
130  
120  
110  
100  
90  
205  
190  
175  
160  
145  
130  
115  
100  
85  
t f  
R
V
td(off)  
- - - -  
t f td(off)  
- - - -  
= 5 , VGS = 10V  
Ω
G
T
J
= 125ºC, V  
= 10V  
GS  
I
= 25A  
D
TJ = 125ºC  
DS = 50V  
V
= 50V  
DS  
T
J
= 25ºC  
I
= 50A  
D
80  
70  
T
= 125ºC  
J
60  
50  
70  
T
= 25ºC  
J
40  
55  
30  
40  
25  
30  
35  
40  
45  
50  
4
6
8
10  
12  
14  
16  
18  
20  
ID - Amperes  
RG - Ohms  
IXYS REF: T_160N10T (5V) 11-16-06-A.xls  
© 2006 IXYS CORPORATION All rights reserved  
厂商 型号 描述 页数 下载

IXYS

 		IXTA-200N085T N沟道增强模式额定雪崩[ N-Channel Enhancement Mode Avalanche Rated ] 5 页

LITTELFUSE

 		IXTA02N250 [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN ] 5 页

IXYS

 		IXTA02N250HV [ Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC PACKAGE-3 ] 5 页

LITTELFUSE

 		IXTA02N250HV [ Power Field-Effect Transistor, ] 6 页

IXYS

 		IXTA02N250HV-TRL [ Power Field-Effect Transistor, ] 5 页

IXYS

 		IXTA02N450HV 高电压功率MOSFET[ High Voltage Power MOSFETs ] 5 页

IXYS

 		IXTA05N100 高电压的MOSFET[ High Voltage MOSFET ] 4 页

IXYS

 		IXTA05N100-TRL [ Power Field-Effect Transistor, ] 5 页

LITTELFUSE

 		IXTA05N100HVTRL [ Power Field-Effect Transistor, 0.75A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 2 PIN ] 4 页

IXYS

 		IXTA05N100P [ Fast Intrinsic Diode ] 7 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于达普

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：smail@ic72.com

服务时间：周一至周六 8:30-17:30

达普官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.229397s