Advanced Technical Information
IXTA 2N80
IXTP 2N80
High Voltage MOSFET
VDSS = 800 V
ID25 2 A
RDS(on) = 6.2 Ω
=
N-Channel Enhancement Mode
Avalanche Energy Rated
Symbol
TestConditions
MaximumRatings
TO-220AB (IXTP)
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
V
TJ = 25°C to 150°C; RGS = 1 MΩ
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
G
VGSM
D
S
ID25
IDM
TC = 25°C
2
8
A
A
TC = 25°C, pulse width limited by TJM
TO-263 AA (IXTA)
IAR
2
A
EAR
EAS
TC = 25°C
TC = 25°C
6
mJ
mJ
200
G
S
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 18 Ω
,
5
V/ns
D (TAB)
PD
TC = 25°C
54
W
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Md
Mountingtorque
1.13/10 Nm/lb.in.
Weight
4
g
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Maximumleadtemperatureforsoldering
300
°C
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
min. typ. max.
Switch-modeandresonant-mode
powersupplies
Flyback inverters
DC choppers
VDSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
800
2.5
V
V
VGS(th)
5.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
Advantages
VDS = VDSS
VGS = 0 V
25 µA
500 µA
TJ = 125°C
Space savings
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
6.2
Ω
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98541A03/24/00
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