SMD Type
Transistors
PNP Silicon Planar High Voltage Transistor
FZTA92
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
6.50
-0.2
Features
+0.2
0.90
-0.2
+0.1
3.00
-0.1
+0.3
7.00
-0.3
High breakdown voltage
4
1 Base
2 Collector
3 Emitter
4 Collector
1
2
3
+0.1
0.70
-0.1
2.9
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IB
Rating
-300
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-300
V
-5
V
Base Current
-100
mA
mA
W
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
-500
Ptot
2
Tj:Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
IC=-100ìA, IE=0
Min
-300
-300
-5
Typ
Max
Unit
V
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=-1mA, IB=0*
V
IE=-100ìA, IC=0
V
VCB=-200V, IE=0
VEB=-3V, IC=0
-0.25
-0.1
-0.5
-0.9
ìA
ìA
V
Emitter Cut-Off Current
IEBO
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
IC=-1mA, VCE=-10V*
IC=-10mA, VCE=-10V*
IC=-30mA, VCE=-10V*
V
25
40
25
50
Static Forward Current Transfer Ratio
hFE
Transition Frequency
Output Capacitance
fT
IC=-10mA, VCE=-20V,f=20MHz
VCB=-20V, f=1MHz
MHz
pF
Cobo
6
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
1
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