SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) POWER TRANSISTOR
ISSUE 3 OCTOBER 1995
FZT968
FEATURES
*
*
*
Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A
6 Amps continuous current (Up to 20 Amps peak )
High gain and very low saturation voltage
C
E
PARTMARKING DETAIL FZT968
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
-15
-12
-6
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Peak Pulse Current
-20
-6
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
A
Ptot
3
W
Tj:Tstg
-55 to +150
°C
= 25°C unless otherwise stated)
amb
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-15
-12
-6
-28
-20
-8
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector Cut-Off Current
Emitter Cut-Off Current
-10
-1.0
nA
µA
VCB=-12V
VCB=-12V, Tamb=100°C
IEBO
-10
nA
VEB=-6V
Collector-Emitter Saturation
Voltage
VCE(sat)
-65
-132
-360
-130
-170
-450
mV
mV
mV
IC=-500mA, IB=-5mA*
IC=-2A, IB=-50mA*
IC=-6A, IB=-250mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-1050 -1200 mV
IC=-6A, IB=-250mA*
Base-Emitter
Turn-On Voltage
-870
-1050 mV
1000
IC=-6A, VCE=-1V*
Static Forward Current
Transfer Ratio
300
300
200
150
450
450
300
240
50
IC=-10mA, VCE=-1V*
IC=-500mA, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
IC=-20A, VCE=-1V*
Transition Frequency
fT
80
MHz
pF
IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance
Switching Times
Cobo
161
VCB=-20V, f=1MHz
ton
toff
120
116
ns
ns
IC=-4A, IB1=-400mA
IB2=400mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
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