SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 JANUARY 1996
FZT458
FEATURES
C
*
400 Volt VCEO
E
COMPLEMENTARY TYPE
PARTMARKING DETAIL
FZT558
FZT458
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
VALUE
UNIT
V
Collector-Base Voltage
400
Collector-Emitter Voltage
400
V
Emitter-Base Voltage
5
V
Continuous Collector Current
Peak Pulse Current
300
mA
A
ICM
1
Base Current
IB
200
2
mA
W
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
Ptot
Tj:Tstg
= 25°C).
-55 to +150
°C
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VCE=320V
VEB=4V
Breakdown Voltages
V(BR)CBO
VCEO(sus)
V(BR)EBO
ICBO
400
400
5
V
V
Collector Cut-Off Currents
100
100
100
nA
nA
nA
ICES
Emitter Cut-Off Current
IEBO
Emitter Saturation Voltages
VCE(sat)
0.2
0.5
V
V
IC=20mA, IB=2mA*
IC=50mA, IB=6mA*
VBE(sat)
VBE(on)
0.9
0.9
V
V
IC=50mA, IB=5mA*
IC=50mA, VCE=10V*
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
hFE
100
100
15
IC=1mA, VCE=10V
IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
300
5
Transition Frequency
fT
50
MHz
pF
IC=10mA, VCE=20V
f=20MHz
Collector-Base
Breakdown Voltage
Cobo
VCB=20V, f=1MHz
Switching times
ton
toff
135 Typical
2260 Typical
ns
ns
IC=50mA, VCC=100V
IB1=5mA, IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT458 datasheet
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