CYT5554D
SURFACE MOUNT
DUAL, ISOLATED
www.centralsemi.com
COMPLEMENTARY
HIGH VOLTAGE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CYT5554D type
consists of one (1) NPN high voltage silicon transistor
and one (1) complementary PNP high voltage silicon
transistor packaged in an epoxy molded SOT-228
surface mount case. Manufactured by the epitaxial
planar process, this SUPERmini™ device is ideal for
high voltage applications.
NPN/PNP SILICON TRANSISTORS
MARKING: FULL PART NUMBER
SOT-228 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
NPN (Q1)
250
PNP (Q2)
250
UNITS
V
A
Collector-Base Voltage
V
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
220
220
V
6.0
7.0
V
Continuous Collector Current
Power Dissipation
I
600
600
mA
W
C
P
2.0
D
Operating and Storage Junction Temperature
Thermal Resistance
T
T
-65 to +150
62.5
°C
J, stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
nA
μA
nA
nA
V
I
I
I
I
V
V
V
V
=120V
-
-
50
-
-
50
CBO
CBO
EBO
EBO
CB
CB
BE
BE
=120V, T =100°C
50
50
A
=3.0V
=4.0V
-
-
-
50
-
50
-
-
BV
BV
BV
I =100μA
250
220
6.0
-
-
250
220
7.0
-
-
CBO
CEO
C
I =1.0mA
-
-
-
-
V
C
I =10μA
V
EBO
E
V
V
V
V
I =10mA, I =1.0mA
75
100
1.00
1.00
-
100
150
1.00
1.00
-
mV
mV
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =50mA, I =5.0mA
-
-
C
B
I =10mA, I =1.0mA
-
-
C
B
I =50mA, I =5.0mA
-
-
V
C
B
h
h
h
h
V
=5.0V, I =1.0mA
120
120
75
25
100
100
75
25
CE
CE
CE
CE
C
V
V
V
=5.0V, I =10mA
300
-
300
-
FE
C
=5.0V, I =50mA
FE
C
=10V, I =150mA
-
-
FE
C
R2 (13-August 2010)
