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TYN416

型号：

TYN416

描述：

可控硅16A[ 16A SCRs ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

7 页

PDF大小：

95 K

下载PDF手册
TN16 and TYNx16 Series  
®
STANDARD  
16A SCRs  
MAIN FEATURES:  
Symbol  
A
Value  
16  
Unit  
A
G
I
T(RMS)  
K
V
/V  
600 to 1000  
25  
V
DRM RRM  
A
I
mA  
GT  
A
K
A
G
K
DESCRIPTION  
A
G
2
D PAK  
The TYN / TN16 SCR Series is suitable for  
general purpose applications.  
Using clip assembly technology, they provide a  
superior performance in surge current capabilities.  
(TN16-G)  
TO-220AB  
(TYN)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current (180° conduction angle)  
T(RMS)  
Tc = 110°C  
16  
10  
A
A
T
Average on-state current (180° conduction angle)  
(AV)  
Tc = 110°C  
Tj = 25°C  
I
Non repetitive surge peak on-state  
current  
tp = 8.3 ms  
tp = 10 ms  
200  
190  
TSM  
A
²
²
2
tp = 10 ms  
F = 60 Hz  
tp = 20 µs  
Tj = 25°C  
180  
50  
A S  
I t  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
Tj = 125°C  
A/µs  
I
= 2 x I , tr ≤ 100 ns  
G
GT  
I
Peak gate current  
Tj = 125°C  
Tj = 125°C  
4
1
A
GM  
P
Average gate power dissipation  
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
V
Tj  
V
Maximum peak reverse gate voltage  
5
RGM  
April 2002 - Ed: 4A  
1/7  
TN16 and TYNx16 Series  
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Value  
Unit  
I
MIN.  
MAX.  
MAX.  
MIN.  
2
GT  
mA  
25  
1.3  
V
V
= 12 V  
R = 33 Ω  
D
L
V
V
GT  
V
Tj = 125°C  
= V  
R = 3.3 kΩ  
0.2  
40  
V
GD  
D
DRM  
L
I = 500 mA Gate open  
MAX.  
MAX.  
mA  
mA  
I
T
H
I
I = 1.2 x I  
G GT  
60  
500  
1.6  
0.77  
23  
L
dV/dt  
V
I
= 67 % V  
Gate open  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
MIN.  
MAX.  
MAX.  
MAX.  
MAX.  
V/µs  
V
D
DRM  
V
= 32 A tp = 380 µs  
TM  
TM  
V
Threshold voltage  
V
t0  
R
Dynamic resistance  
mΩ  
µA  
mA  
d
I
5
DRM  
V
= V  
RRM  
DRM  
I
2
RRM  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
Unit  
R
R
Junction to case (DC)  
Junction to ambient (DC)  
°C/W  
°C/W  
1.1  
60  
45  
th(j-c)  
TO-220AB  
th(j-a)  
²
²
S = 1 cm  
D PAK  
S = Copper surface under tab  
PRODUCT SELECTOR  
Voltage (xxx)  
Package  
Part Number  
Sensitivity  
600 V  
800 V  
1000 V  
²
TN1625-xxxG  
TYNx16  
X
X
X
X
X
X
25 mA  
25 mA  
D PAK  
TO-220AB  
2/7  
TN16 and TYNx16 Series  
ORDERING INFORMATION  
TN 16 25 - 600 G (-TR)  
STANDARD  
SCR  
SERIES  
PACKING MODE:  
Blank:Tube  
-TR:Tape & Reel  
PACKAGE:  
G: D2PAK  
CURRENT: 16A  
SENSITIVITY:  
25: 25mA  
VOLTAGE:  
600: 600V  
800: 800V  
1000: 1000V  
TYN 6 16 (RG)  
STANDARD  
SCR  
SERIES  
PACKING MODE  
Blank: Bulk  
RG:Tube  
VOLTAGE:  
CURRENT: 16A  
6: 600V  
8: 800V  
10: 1000V  
OTHER INFORMATION  
Part Number  
Marking  
Weight  
Base Quantity  
Packing mode  
TN1625-x00G  
TN1625-x00G-TR  
TYNx16  
TN1625x00G  
TN1625x00G  
1.5 g  
1.5 g  
2.3 g  
2.3 g  
50  
1000  
250  
50  
Tube  
Tape & reel  
Bulk  
TYNx16  
TYNx16  
TYNx16RG  
Tube  
Note: x = voltage  
3/7  
TN16 and TYNx16 Series  
Fig. 1: Maximum average power dissipation  
Fig. 2-1: Average and D.C. on-state current  
versus average on-state current.  
versus case temperature.  
IT(av)(A)  
P(W)  
18  
16  
D.C.  
α = 180°  
16  
14  
14  
12  
10  
8
12  
α =180°  
10  
8
6
6
360°  
4
4
2
2
α
IT(av)(A)  
Tcase(°C)  
0
0
0
2
4
6
8
10  
12  
0
25  
50  
75  
100  
125  
Fig. 2-2: Average and D.C. on-state current  
versus ambient temperature (copper surface  
under tab: S = 1 cm² (for D²PAK).  
Fig. 3: Relative variation of thermal impedance  
versus pulse duration.  
IT(av)(A)  
K = [Zth/Rth]  
4.0  
3.5  
1.00  
Zth(j-c)  
D.C.  
3.0  
2.5  
α = 180°  
0.10  
2.0  
Zth(j-a)  
1.5  
1.0  
0.5  
tp(s)  
Tamb(°C)  
0.01  
0.0  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
0
25  
50  
75  
100  
125  
Fig. 4: Relative variation of gate trigger current,  
holding current and latching current versus  
junction temperature.  
Fig. 5: Surge peak on-state current versus  
number of cycles.  
IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C]  
ITSM(A)  
2.5  
200  
180  
2.0  
160  
140  
120  
100  
80  
tp = 10ms  
One cycle  
IGT  
Non repetitive  
Tj initial = 25°C  
1.5  
IH & IL  
Repetitive  
Tcase = 110 °C  
1.0  
60  
0.5  
40  
20  
0
Tj(°C)  
Number of cycles  
0.0  
-40 -20  
0
20  
40  
60  
80 100 120 140  
1
10  
100  
1000  
4/7  
TN16 and TYNx16 Series  
Fig. 6: Non-repetitive surge peak on-state  
current for sinusoidal pulse with width  
tp < 10 ms, and corresponding value of I²t.  
Fig. 7: On-state characteristics (maximum  
values).  
a
2
2
ITM(A)  
ITSM(A),I t(A s)  
200  
2000  
1000  
Tj max.:  
Tj initial = 25°C  
Vto = 0.77V  
100  
ITSM  
Rd = 23mΩ  
Tj = Tjmax.  
dI/dt  
limitattion  
I2t  
10  
100  
Tj = 25°C  
VTM(V)  
tp(ms)  
1
10  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5  
0.01  
0.10  
1.00  
10.00  
Fig. 8: Thermal resistance junction to ambient  
versus copper surface under tab (Epoxy printed  
circuit board FR4, copper thickness: 35 µm) (for  
D²PAK).  
Rth(j-a) (°C/W)  
80  
70  
60  
50  
40  
30  
20  
10  
0
2
S (cm )  
0
4
8
12 16 20 24 28 32 36 40  
5/7  
TN16 and TYNx16 Series  
PACKAGE MECHANICAL DATA  
D²PAK (Plastic)  
DIMENSIONS  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
REF.  
Inches  
A
E
C2  
L2  
L3  
A
A1  
A2  
B
4.30  
2.49  
0.03  
0.70  
1.25  
0.45  
1.21  
8.95  
10.00  
4.88  
15.00  
1.27  
1.40  
4.60 0.169  
2.69 0.098  
0.23 0.001  
0.93 0.027  
0.181  
0.106  
0.009  
0.037  
D
L
B2  
C
1.40  
0.048 0.055  
A1  
0.60 0.017  
1.36 0.047  
9.35 0.352  
10.28 0.393  
5.28 0.192  
15.85 0.590  
1.40 0.050  
1.75 0.055  
0.024  
0.054  
0.368  
0.405  
0.208  
0.624  
0.055  
0.069  
C2  
D
B2  
B
R
C
E
G
G
L
A2  
2.0 MIN.  
L2  
L3  
R
FLAT ZONE  
0.40  
0.016  
V2  
V2  
0°  
8°  
0°  
8°  
FOOTPRINT DIMENSIONS (in millimeters)  
D²PAK (Plastic)  
16.90  
10.30  
5.08  
1.30  
3.70  
8.90  
6/7  
TN16 and TYNx16 Series  
PACKAGE MECHANICAL DATA  
TO-220AB (Plastic)  
DIMENSIONS  
REF.  
Millimeters  
Inches  
B
C
b2  
Min. Typ. Max. Min. Typ. Max.  
A
a1  
a2  
B
15.20  
15.90 0.598  
0.625  
L
3.75  
0.147  
F
13.00  
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
I
A
b1  
b2  
C
l4  
c1  
c2  
e
c2  
a1  
l3  
l2  
a2  
F
I
I4  
L
15.80 16.40 16.80 0.622 0.646 0.661  
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
b1  
M
l2  
l3  
M
c1  
e
2.60  
0.102  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany  
Hong Kong - India - Isreal - Italy - Japan - Malaysia - Malta - Morocco - Singapore  
Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  
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