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1SMB3EZ6.8_09

型号:

1SMB3EZ6.8_09

描述:

玻璃钝化结硅稳压二极管[ GLASS PASSIVATED JUNCTION SILICON ZENER DIODES ]

品牌:

PANJIT[ PAN JIT INTERNATIONAL INC. ]

页数:

5 页

PDF大小:

342 K

1SMB3EZ6.8~1SMB3EZ51  
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES  
POWER  
VOLTAGE  
6.8 to 51 Volts  
3.0 Watts  
FEATURES  
• Low profile package  
• Built-in strain relief  
• Glass passivated iunction  
• Low inductance  
• Typical ID less than 1.0µA above 11V  
• Plastic package has Underwriters Laboratory Flammability  
Classification 94V-O  
• High temperature soldering : 260°C /10 seconds at terminals  
• In compliance with EU RoHS 2002/95/EC directives  
MECHANICALDATA  
• Case: JEDEC DO-214AA, Molded plastic over passivated junction  
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026  
• Polarity: Indicated by cathode band  
• Standard packing: 12mm tape (E1A-481)  
• Weight: 0.0032 ounce, 0.092 gram  
MAXIMUMRATINGSANDELECTRICALCHARACTERISTICS  
Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
Value  
3.0  
Units  
Peak Pulse Power Dissipation on TL=50 OC (Notes A)  
Derate above 50 OC  
W atts  
P
D
Peak Forward Surge Current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC method)  
15  
Amps  
OC  
I
FSM  
Operating Junction and Storage Temperature Range  
-55 to + 150  
TJ,TSTG  
NOTES:  
A.Mounted on 5.0mm2 (.013mm thick) land areas.  
B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum  
PAGE . 1  
STAD-MAR.25.2009  
1
1SMB3EZ6.8~1SMB3EZ51  
Max Reverse  
Leakage Current  
Nominal Zener Voltage  
Part Number  
Maximum Zener Impedance  
Marking  
Code  
V
Z
@ IZT  
Z
ZT @ IZT  
I
ZT  
Z
ZK @ IZK  
I
ZK  
IR @VR  
µA  
Nom. V  
Min. V  
Max. V  
mA  
mA  
V
3.0 Watt ZENER  
1SMB3EZ6.8  
6.8  
7.5  
8.2  
8.7  
9.1  
10  
11  
6.46  
7.13  
7.14  
7.88  
2
2
110  
100  
91  
85  
82  
75  
68  
63  
58  
53  
50  
47  
44  
42  
40  
37  
34  
31  
30  
28  
27  
25  
23  
21  
19  
17  
16  
15  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
750  
750  
750  
750  
750  
1000  
1000  
1000  
1000  
1500  
1500  
1500  
1
5
4
6V8B  
7V5B  
8V2B  
8V7B  
9V1B  
10B  
11B  
1SMB3EZ7.5  
1SMB3EZ8.2  
1SMB3EZ8.7  
1SMB3EZ9.1  
1SMB3EZ10  
1SMB3EZ11  
1SMB3EZ12  
1SMB3EZ13  
1SMB3EZ14  
1SMB3EZ15  
1SMB3EZ16  
1SMB3EZ17  
1SMB3EZ18  
1SMB3EZ19  
1SMB3EZ20  
1SMB3EZ22  
1SMB3EZ24  
1SMB3EZ25  
1SMB3EZ27  
1SMB3EZ28  
1SMB3EZ30  
1SMB3EZ33  
1SMB3EZ36  
1SMB3EZ39  
1SMB3EZ43  
1SMB3EZ47  
1SMB3EZ51  
0.5  
5
5
7.79  
8.61  
2
0.5  
5
6
8.27  
9.14  
2
0.5  
4
6.6  
8.65  
9.56  
3
0.5  
3
7
9.5  
10.5  
4
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
3
7.6  
10.45  
11.4  
11.55  
12.6  
4
1
8.4  
12  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
25  
27  
28  
30  
33  
36  
39  
43  
47  
51  
5
1
9.1  
12B  
13B  
14B  
15B  
16B  
17B  
18B  
19B  
20B  
22B  
24B  
25B  
27B  
28B  
30B  
33B  
36B  
39B  
43B  
47B  
51B  
12.35  
13.3  
13.65  
14.7  
5
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
9.9  
5
10.6  
11.4  
12.2  
13  
14.25  
15.2  
15.75  
16.8  
6
6
16.15  
17.1  
17.85  
18.9  
6
6
13.7  
14.4  
15.2  
16.7  
18.2  
19  
18.05  
19  
19.95  
21  
7
7
20.9  
23.1  
8
22.8  
25.2  
9
23.75  
25.65  
26.6  
26.25  
28.35  
29.4  
10  
10  
12  
16  
20  
22  
28  
33  
38  
45  
20.6  
21.3  
22.5  
25.1  
27.4  
29.7  
32.7  
35.8  
38.8  
28.5  
31.5  
31.35  
34.2  
34.65  
37.8  
37.05  
40.85  
44.65  
48.45  
40.95  
45.15  
49.35  
53.55  
PAGE . 2  
STAD-MAR.25.2009  
1
1SMB3EZ6.8~1SMB3EZ51  
1
1000  
500  
300  
200  
100  
50  
30  
20  
10  
3
2
APPLICATION NOTE:  
Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determinejunction  
temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended:  
Lead Temperature, TL, should be determined from:  
T
L
=qLA P  
D + TA  
qL  
A
is the lead-to-ambient thermal resistance (OC/W) and Pd is the power dissipation. The value for qL  
A
will vary and depends  
on the device mounting method. qL  
A
is generally 30-40 OC/W for the various clips and tie points in common use and for printed  
circuit board wiring.  
The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point.  
The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges  
generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of  
TL, the junction temperature may be determined by:  
TJ = TL + DTJL  
DTJL is the increase in junction temperature above the lead temperature and may be found from Figure 2 for a train of power pulses  
or from Figure 10 for dc power.  
DTJL =q  
J
L PD  
For worst-case design, using expected limits of I  
, can then be found from:  
Z
, limits of P  
D
and the extremes of T  
J
(DTJ) may be estimated. Changes in voltage,  
V
Z
DV =q VD  
Z
TJ  
qV  
Z, the zener voltage temperature coefficient, is found from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance.  
For best regulation, keep current excursions as low as possible.  
Data of Figure 2 should not be used to compute surge capa-bility. Surge limitations are given in Figure 3. They are lower than would  
be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small  
spots resulting in device degradation should the limits of Figure 3 be exceeded.  
PAGE . 3  
STAD-MAR.25.2009  
1
1SMB3EZ6.8~1SMB3EZ51  
RANGE  
4
5
6
7
8
PAGE . 4  
STAD-MAR.25.2009  
1
1SMB3EZ6.8~1SMB3EZ51  
MOUNTING PAD LAYOUT  
ORDER INFORMATION  
• Packing information  
T/R - 3K per 13" plastic Reel  
T/R - 0.5Kper 7” plastic Reel  
LEGAL STATEMENT  
Copyright PanJit International, Inc 2009  
The information presented in this document is believed to be accurate and reliable. The specifications and information herein  
are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its  
products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit  
does not convey any license under its patent rights or rights of others.  
PAGE . 5  
STAD-MAR.25.2009  
1
厂商 型号 描述 页数 下载

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1SM-WMSP1-R2-M6KE [ Rocker Switch, SPDT, Latched, 0.02A, 20VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

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Carling Technologies

1SM-WMSP2-R2-M6GE [ Rocker Switch, SPDT, Momentary, 3A, 28VDC, Solder Terminal, Narrow Rocker Type Actuator, Surface Mount-right Angle ] 5 页

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