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AZV831

型号：

AZV831

描述：

单一的低偏置电流，低电压，轨至轨输入/输出CMOS运算放大器[ Single Low Bias Current, Low Voltage, Rail-to-Rail Input/Output CMOS Operational Amplifier ]

品牌：

BCDSEMI[ BCD SEMICONDUCTOR MANUFACTURING LIMITED ]

页数：

24 页

PDF大小：

591 K

下载PDF手册
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Features  
General Description  
•
•
•
•
Single Supply Voltage Range: 1.6V to 5.5V  
Ultra-low Input Bias Current: 1pA (Typ.)  
Offset Voltage: 0.5mV (Typ.), 2.5mV (Max.)  
Rail-to-Rail Input  
VCM: 200mV beyond Rails  
Rail-to-Rail Output Swing  
20kΩ Load  
Supply Current: 70μA  
Unity Gain Stable  
Gain Bandwidth Product: 1.0MHz  
Slew Rate: 0.45V/μs @ VCC=5.0V  
Operation Ambient Temperature Range: -40ºC  
to 85ºC  
The AZV831 is low bias current, low voltage  
operational amplifiers which can be designed into a  
wide range of applications. The AZV831 has a  
quiescent current of 70μA per amplifier at 1.6V.  
The AZV831 features optimal performance in low  
voltage, low bias current systems. The IC can provide  
rail-to-rail output swing under heavy loads. The  
common-mode input voltage range could be designed  
200mV exceeding the supply voltage range, thus  
enables the customer to expand its application scope.  
The AZV831 has a maximum input offset voltage of  
2.5mV and its operating range is from 1.6V to 5.5V.  
•
•
•
•
AZV831 is available in SC-70-5 and SOT-23-5  
packages.  
Applications  
•
•
•
•
Sensors  
Photodiode Amplification  
Battery-Powered Instrumentation  
Pulse Blood Oximeter, Glucose Meter  
SC-70-5  
SOT-23-5  
Figure 1. Package Types of AZV831  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
1
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Pin Configuration  
KS/K Package  
（SC-70-5/SOT-23-5）  
OUTPUT  
VEE  
1
2
3
5
4
VCC  
IN-  
IN+  
Figure 2. Pin Configuration of AZV831 (Top View)  
Function Block Diagram  
5
VCC  
+
-
Class  
AB  
Control  
4
1
IN-  
OUTPUT  
3
IN+  
+
-
2
VEE  
Figure 3. Functional Block Diagram of AZV831  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
2
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Ordering Information  
AZV831  
-
Circuit Type  
G1: Green  
Package  
Blank: Tube  
KS: SC-70-5  
K: SOT-23-5  
TR: Tape & Reel  
Temperature  
Range  
Packing  
Marking ID  
Package  
Part Number  
Type  
SC-70-5  
AZV831KSTR-G1  
AZV831KTR-G1  
L3  
G4D  
Tape & Reel  
-40 to 85°C  
SOT-23-5  
Tape & Reel  
-40 to 85°C  
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant  
and green.  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
3
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Absolute Maximum Ratings (Note 1)  
Parameter  
Symbol  
VCC  
Value  
Unit  
V
Power Supply Voltage  
Differential Input Voltage  
Input Voltage  
6.0  
6.0  
VID  
V
VIN  
-0.3 to VCC+0.5  
150  
V
Operating Junction Temperature  
TJ  
ºC  
SC-70-5  
SOT-23-5  
-65 to 150  
270  
220  
Thermal Resistance  
(Junction to Ambient)  
θJA  
ºC /W  
ºC  
Storage Temperature Range  
TSTG  
Lead Temperature (Soldering,10 Seconds)  
ESD (Human Body Model)  
TLEAD  
260  
6000  
400  
ºC  
V
ESD (Machine Model)  
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. These are stress ratings only, and functional operation of the device at these or any other conditions  
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute  
Maximum Ratings” for extended periods may affect device reliability.  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Max  
Unit  
Supply Voltage  
VCC  
1.6  
5.5  
V
Operation Ambient Temperature  
Range  
TA  
-40  
85  
ºC  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
4
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
1.6V DC Electrical Characteristics  
VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
0.5 2.5 mV  
1.0 5.0 pA  
2.0 pA  
Input Offset Voltage  
Input Bias Current  
IB  
Input Offset Current  
IOS  
Input Common-mode Voltage Range  
Common-mode Rejection Ratio  
VCM  
-0.2  
55  
1.8  
V
CMRR VCM=-0.2V to 1.8V  
75  
dB  
RL=10kΩ connect to VCC/2，  
VO=0.2V to 1.4V  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
GV  
90 110  
2.0  
dB  
ΔVOS/ΔT  
μV/ °C  
VID=0.5V, RL=1kΩ connect  
to VCC/2  
VID=0.5V, RL=10kΩ connect  
to VCC/2  
30 50  
Output Voltage Swing from Rail  
VOL/VOH  
mV  
mA  
3
15  
Sink  
Output Current  
Source  
ISINK  
VOUT=VCC  
8
5
10  
8.5  
9
ISOURCE VOUT=0V  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current  
ZOUT  
f=10kHz, G=1 (Note 2)  
Ω
PSRR VCC=1.6V to 5.0V, VCM=0.5V  
70  
80  
dB  
ICC  
VCM<VCC-1V, IOUT=0  
70 90 μA  
1.6V AC Electrical Characteristics  
VCC=1.6V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.32  
67  
MHz  
V/μs  
G=1, 1V Step,  
CL=100pF, RL=10kΩ  
Slew Rate  
SR  
Phase Margin  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, G=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
-70  
27  
Voltage Noise Density  
en  
f=1kHz  
nV/ Hz  
Note 2: G is Closed-Loop Voltage Gain.  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
5
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
1.8V DC Electrical Characteristics  
VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
0.5 2.5 mV  
1.0 5.0 pA  
2.0 pA  
Input Offset Voltage  
Input Bias Current  
IB  
Input Offset Current  
IOS  
Input Common-mode Voltage Range  
Common-mode Rejection Ratio  
VCM  
-0.2  
55  
2.0  
V
CMRR VCM=-0.2V to 2.0V  
75  
dB  
RL=10kΩ connect to VCC/2，  
VO=0.2V to 1.6V  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
GV  
90 112  
2.0  
dB  
ΔVOS/ΔT  
μV/ °C  
VID=0.5V, RL=1kΩ connect  
to VCC/2  
VID=0.5V, RL=10kΩ connect  
to VCC/2  
25 50  
Output Voltage Swing from Rail  
VOL/VOH  
mV  
mA  
3
15  
Sink  
Output Current  
Source  
ISINK  
VOUT=VCC  
12  
10  
16  
14  
9
ISOURCE VOUT=0V  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current  
ZOUT  
f=10kHz, G=1 (Note 2)  
Ω
PSRR VCC=1.6V to 5.0V, VCM=0.5V  
70  
80  
dB  
ICC  
VCM<VCC-1V, IOUT=0  
70 90 μA  
1.8V AC Electrical Characteristics  
VCC=1.8V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.34  
67  
MHz  
V/μs  
G=1, 1V Step,  
CL=100pF, RL=10kΩ  
Slew Rate  
SR  
Phase Margin  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, G=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
-70  
27  
Voltage Noise Density  
en  
f=1kHz  
nV/ Hz  
Note 2: G is Closed-Loop Voltage Gain.  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
6
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
3.0V DC Electrical Characteristics  
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
0.5 2.5 mV  
1.0 5.0 pA  
2.0 pA  
Input Offset Voltage  
Input Bias Current  
IB  
Input Offset Current  
Input Common-mode Voltage Range  
IOS  
VCM  
-0.3  
62  
3.3  
V
VCM=-0.3V to 1.9V  
80  
75  
Common-mode Rejection Ratio  
CMRR  
dB  
V
CM=-0.3V to 3.3V  
58  
RL=1kΩ connect to VCC/2，  
VO=0.2V to 2.8V  
RL=10kΩ connect to VCC/2,  
VO=0.1V to 2.9V  
90 110  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
Output Voltage Swing from Rail  
GV  
dB  
95 115  
2.0  
ΔVOS/ΔT  
VOL/VOH  
ISINK  
μV/ °C  
VIN=0.5V, RL=1kΩ connect  
to VCC/2  
VIN=0.5V, RL=10kΩ connect  
to VCC/2  
20 50  
mV  
3
15  
Sink  
Output Current  
Source  
VOUT=VCC  
50  
50  
60  
65  
9
mA  
ISOURCE VOUT=0V  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current  
ZOUT  
f=10kHz, G=1 (Note 2)  
Ω
PSRR VCC=1.6V to 5.0V, VCM=0.5V  
70  
80  
dB  
ICC  
VCM<VCC-1V, IOUT=0  
70 90 μA  
3.0V AC Electrical Characteristics  
VCC=3.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.40  
67  
MHz  
V/μs  
G=1, 2V Step,  
CL=100pF, RL=10kΩ  
Slew Rate  
SR  
Phase Margin  
φM  
RL=100kΩ  
Degrees  
dB  
f=1kHz, G=1, VIN=1Vpp  
RL=10kΩ, CL=100pF  
Total Harmonic Distortion+Noise THD+N  
-70  
27  
Voltage Noise Density  
en  
f=1kHz  
nV/ Hz  
Note 2: G is Closed-Loop Voltage Gain.  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
7
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
5.0V DC Electrical Characteristics  
VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
VOS  
Conditions  
Min Typ Max Unit  
0.5 2.5 mV  
1.0 5.0 pA  
2.0 pA  
Input Offset Voltage  
Input Bias Current  
IB  
Input Offset Current  
Input Common-mode Voltage Range  
IOS  
VCM  
-0.3  
70  
5.3  
V
VCM=-0.3V to 3.9V  
85  
90  
Common-mode Rejection Ratio  
CMRR  
dB  
V
CM=-0.3V to 5.3V  
65  
RL=1kΩ connect to VCC/2,  
VO=0.2V to 4.8V  
RL=10kΩ connect to VCC/2,  
VO=0.05V to 4.95V  
80  
85  
92  
Large Signal Voltage Gain  
Input Offset Voltage Drift  
Output Voltage Swing from Rail  
GV  
dB  
μV/°C  
mV  
98  
2.0  
25  
ΔVOS/ΔT  
VOL/VOH  
ISINK  
VIN=0.5V, RL=1kΩ connect to  
VCC/2  
VIN=0.5V, RL=10kΩ connect to  
VCC/2  
50  
15  
4
Sink  
Output Current  
Source  
VOUT=VCC  
100 150  
110 185  
9
mA  
ISOURCE VOUT=0V  
f=1kHz, G=1 (note 2)  
PSRR VCC=1.6V to 5.0V, VCM=0.5V  
ICC VCM<VCC-1V, IOUT=0  
Closed-loop Output Impedance  
Power Supply Rejection Ratio  
Supply Current  
Ω
70  
80  
70  
dB  
90 μA  
5V AC Electrical Characteristics  
VCC=5.0V, VEE=0, VCM=VCC/2, TA=25°C, unless otherwise noted.  
Parameter  
Symbol  
Conditions  
Min Typ Max Unit  
Gain Bandwidth Product  
GBP  
RL=100kΩ  
1.0  
0.45  
67  
MHz  
V/μs  
G=1, 2V Step,  
CL=100pF, RL=10kΩ  
Slew Rate  
SR  
φM  
Phase Margin  
THD+N  
RL=100kΩ  
Degrees  
dB  
f=1kHz, G=1, VIN=1VPP  
RL=10kΩ,CL=100pF  
THD+N  
en  
-70  
27  
Voltage Noise Density  
f=1kHz  
nV/ Hz  
Note 2: G is Closed-loop Voltage Gain.  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
8
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
No Load  
VCC=1.6V  
VCC=1.8V  
VCC=3.0V  
VCC=5.0V  
IOUT=0mA  
-10  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
-40  
-20  
0
20  
40  
60  
80  
100  
Supply Voltage (V)  
Temperature (OC)  
Figure 4. Supply Current vs. Supply Voltage  
Figure 5. Supply Current vs. Temperature  
1
0
1
0
VCC=1.6V  
VCC=1.8V  
-1  
-2  
-3  
-4  
-5  
-6  
-1  
-2  
-3  
-4  
-5  
-6  
TA=-40oC  
TA=25oC  
TA=85oC  
TA=-40oC  
TA=25oC  
TA=85oC  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
-0.5  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
Input Common Mode Voltage (V)  
Input Common Mode Voltage (V)  
Figure 6. Offset Voltage vs. Common Mode Voltage  
Figure 7. Offset Voltage vs. Common Mode Voltage  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
9
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
1
4
VCC=3.0V  
VCC=5.0V  
0
-1  
-2  
-3  
-4  
-5  
-6  
2
0
-2  
-4  
-6  
TA=-40oC  
TA=25oC  
TA=85oC  
TA=-40oC  
TA=25oC  
TA=85oC  
0
1
2
3
4
0
1
2
3
4
5
6
Input Common Mode Voltage (V)  
Input Common Mode Voltage (V)  
Figure 8. Offset Voltage vs. Common Mode Voltage  
Figure 9. Offset Voltage vs. Common Mode Voltage  
1000  
1000  
VCC=1.6V, VEE=0V  
VCC=1.8V, VEE=0V  
100  
10  
100  
10  
Sink Current  
Sink Current  
Source Current  
Source Current  
1
1
0.1  
1
10  
0.1  
1
10  
Output Current (mA)  
Output Current (mA)  
Figure 10. Output Voltage vs. Output Current  
Figure 11. Output Voltage vs. Output Current  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
10  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
10000  
VCC=3.0V, VEE=0V  
VCC=5.0V, VEE=0V  
1000  
100  
10  
1000  
100  
10  
Sink Current  
Sink Current  
Source Current  
Source Current  
1
0.01  
1
0.01  
0.1  
1
10  
0.1  
1
10  
100  
Output Current (mA)  
Output Current (mA)  
Figure 12. Output Voltage vs. Output Current  
Figure 13. Output Voltage vs. Output Current  
160  
140  
120  
100  
80  
200  
180  
VCC=1.6V  
VCC=1.8V  
VCC=3.0V  
VCC=5.0V  
VEE=0V  
VO short to VCC  
VEE=0V  
O short to VEE  
V
160  
140  
120  
100  
80  
VCC=1.6V  
VCC=1.8V  
VCC=3.0V  
VCC=5.0V  
60  
60  
40  
40  
20  
20  
0
-40  
0
-40  
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
Temperature (oC)  
Temperature (oC)  
Figure 14. Output Short Circuit Current vs. Temperature Figure 15. Output Short Circuit Current vs. Temperature  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
11  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
160  
140  
120  
100  
80  
120  
100  
80  
60  
40  
20  
0
VEE=0V  
VO short to VEE  
VEE=0V  
VO short to VCC  
60  
40  
20  
0
1
2
3
4
5
1
2
3
4
5
Supply Voltage (V)  
Supply Voltage (V)  
Figure 16. Output Short Circuit Current  
vs. Supply Voltage  
Figure 17. Output Short Circuit Current  
vs. Supply Voltage  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
27  
26  
25  
24  
23  
22  
21  
20  
RL=10k  
Ω
RL=1kΩ  
Positive Swing  
Negative Swing  
Positive Swing  
Negative Swing  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
Dual Supply Voltage (V)  
Dual Supply Voltage (V)  
Figure 18. Output Voltage Swing vs. Supply Voltage  
Figure 19. Output Voltage Swing vs. Supply Voltage  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
12  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
48  
44  
40  
36  
32  
28  
24  
20  
16  
12  
10  
9
8
7
6
5
4
3
2
1
0
VCC=0.8V,VEE=-0.8V  
VCC=2.5V,VEE=-2.5V  
VCC=0.8V,VEE=-0.8V  
VCC=2.5V,VEE=-2.5V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
RL=1k  
Ω
RL=10k  
Ω
Positive Swing  
Negative Swing  
Negative Swing  
Positive Swing  
60  
-40  
-20  
0
20  
40  
60  
80  
100  
-40  
-20  
0
20  
40  
80  
100  
Temperature (oC)  
Temperature (oC)  
Figure 20. Output Voltage Swing vs. Temperature  
Figure 21. Output Voltage Swing vs. Temperature  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
RL=100k  
RL=10k  
RL=1k  
RL=8  
Ω
Ω
CL=100pF  
CL=200pF  
CL=300pF  
Ω
Ω
VCC=0.8V, VEE=-0.8V  
RL=100kΩ  
VCC=0.8V, VEE=-0.8V  
-10  
-20  
-10  
-20  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 22. Gain and Phase vs. Frequency  
and Resistive Load  
Figure 23. Gain and Phase vs. Frequency  
and Capacitive Load  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
13  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
RL=100k  
RL=10k  
RL=1k  
RL=8  
Ω
Ω
CL=100pF  
CL=200pF  
CL=300pF  
Ω
Ω
VCC=0.8V, VEE=-0.8V  
VCC=0.9V, VEE=-0.9V  
-10  
-20  
-10  
-20  
20  
10  
RL=10k  
Ω
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 24. Gain and Phase vs. Frequency  
and Capacitive Load  
Figure 25. Gain and Phase vs. Frequency  
and Resistive Load  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
20  
CL=100pF  
CL=200pF  
CL=300pF  
CL=100pF  
CL=200pF  
CL=300pF  
10  
0
VCC=0.9V, VEE=-0.9V  
VCC=0.9V, VEE=-0.9V  
RL=10k  
Ω
-10  
-20  
-10  
-20  
RL=100k  
Ω
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 26. Gain and Phase vs. Frequency  
and Capacitive Load  
Figure 27. Gain and Phase vs. Frequency  
and Capacitive Load  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
14  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
RL=100k  
RL=10k  
RL=1k  
RL=8  
Ω
Ω
CL=100pF  
CL=200pF  
CL=300pF  
Ω
Ω
VCC=1.5V, VEE=-1.5V  
VCC=1.5V, VEE=-1.5V  
-10  
-20  
-10  
-20  
20  
10  
RL=100k  
Ω
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 28. Gain and Phase vs. Frequency  
and Resistive Load  
Figure 29. Gain and Phase vs. Frequency  
and Capacitive Load  
70  
60  
50  
40  
30  
100  
70  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
60  
50  
40  
30  
20  
10  
0
90  
80  
70  
60  
50  
40  
30  
20  
10  
20  
RL=100k  
RL=10k  
RL=1k  
RL=8  
Ω
Ω
CL=100pF  
CL=200pF  
CL=300pF  
10  
Ω
Ω
0
VCC=1.5V, VEE=-1.5V  
VCC=2.5V, VEE=-2.5V  
-10  
-20  
-10  
-20  
RL=10k  
Ω
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 30. Gain and Phase vs. Frequency  
and Capacitive Load  
Figure 31. Gain and Phase vs. Frequency  
and Resistive Load  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
15  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
70  
60  
50  
40  
30  
20  
10  
0
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
CL=100pF  
CL=200pF  
CL=300pF  
CL=100pF  
CL=200pF  
CL=300pF  
VCC=2.5V, VEE=-2.5V  
VCC=2.5V, VEE=-2.5V  
RL=10kΩ  
RL=100k  
Ω
-10  
-20  
-10  
-20  
10k  
100k  
1M  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
Figure 32. Gain and Phase vs. Frequency  
and Capacitive Load  
Figure 33. Gain and Phase vs. Frequency  
and Capacitive Load  
1000  
VCC=1.6V to 5V  
EE=0V  
V
10  
1
G=1, RL=10kΩ, CL=100pF  
VCC=0.8V,VEE=-0.8V  
VCC=0.9V,VEE=-0.9V  
VCC=1.5V,VEE=-1.5V  
VCC=2.5V,VEE=-2.5V  
100  
10  
1
0.1  
0.01  
1E-3  
G=1  
G=10  
G=100  
0.01  
0.1  
1
100  
1k  
10k  
100k  
Output Voltage (V)  
Frequency (Hz)  
Figure 34. Output Impedance vs. Frequency  
Figure 35. THD+N vs. Output Voltage  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
16  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
0.1  
Bandwidth<10Hz to 22kHz  
VCC=5.0V, VEE=0V, G=1  
VCC=0.8V, VEE=-0.8V  
VCC=0.9V, VEE=-0.9V  
VCC=1.5V, VEE=-1.5V  
VCC=2.5V, VEE=-2.5V  
100n  
0.01  
VOUT=100mVRMS, AV=1, RL=10kΩ, CL=100pF  
1E-3  
10n  
100  
1k  
10k  
100  
1k  
10k  
Frequency (Hz)  
Frequency (Hz)  
Figure 36. THD+N vs. Frequency  
Figure 37. Input Voltage Noise Density  
VCC=1.6V  
EE=0V  
V
V
CC=1.8V  
EE=0V  
V
VIN  
VIN  
50mV/div  
50mV/div  
VOUT  
VOUT  
50mV/div  
50mV/div  
CL=100pF, RL=100kΩ, AV=1  
CL=100pF, RL=100kΩ, AV=1  
Time (2μs/div)  
Time (2μs/div)  
Figure 38. Small Signal Pulse Response  
Figure 39. Small Signal Pulse Response  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
17  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
VCC=5.0V  
VEE=0V  
VCC=3.0V  
VEE=0V  
VIN  
VIN  
50mV/div  
50mV/div  
VOUT  
VOUT  
50mV/div  
50mV/div  
CL=100pF, RL=100kΩ, AV=1  
CL=100pF, RL=100kΩ, AV=1  
Time (2μs/div)  
Time (2μs/div)  
Figure 40. Small Signal Pulse Response  
Figure 41. Small Signal Pulse Response  
VCC=1.8V  
VCC=1.6V  
VEE=0V  
VIN  
VIN  
VEE=0V  
500mV/div  
500mV/div  
VOUT  
VOUT  
500mV/div  
500mV/div  
CL=200pF, RL=100kΩ, AV=1  
CL=200pF, RL=100kΩ, AV=1  
Time (10μs/div)  
Time (10μs/div)  
Figure 42. Large Signal Pulse Response  
Figure 43. Large Signal Pulse Response  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
18  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
V
V
CC=3.0V  
EE=0V  
VCC=5.0V  
VEE=0V  
VIN  
VIN  
1V/div  
2V/div  
VOUT  
VOUT  
1V/div  
2V/div  
CL=200pF, RL=100kΩ, AV=1  
CL=200pF, RL=100kΩ, AV=1  
Time (10μs/div)  
Time (10μs/div)  
Figure 44. Large Signal Pulse Response  
Figure 45. Large Signal Pulse Response  
V
V
CC=1.6V  
EE=0V  
V
V
CC=1.8V  
EE=0V  
VIN  
VIN  
500mV/div  
500mV/div  
VOUT  
VOUT  
500mV/div  
500mV/div  
CL=200pF, RL=10kΩ, AV=1  
Time (10μs/div)  
CL=200pF, RL=10kΩ, AV=1  
Time (10μs/div)  
Figure 46. Large Signal Pulse Response  
Figure 47. Large Signal Pulse Response  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
19  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
VCC=3.0V  
VEE=0V  
VCC=5.0V  
VEE=0V  
VIN  
VIN  
1V/div  
2V/div  
VOUT  
VOUT  
1V/div  
2V/div  
CL=200pF, RL=10kΩ, AV=1  
CL=200pF, RL=10kΩ, AV=1  
Time (10μs/div)  
Time (10μs/div)  
Figure 48. Large Signal Pulse Response  
Figure 49. Large Signal Pulse Response  
VCC=2.5V  
EE=-2.5V  
VIN  
VCC=2.5V  
VEE=-2.5V  
V
VIN  
VIN  
1V/div  
50mV/div  
VOUT  
VOUT  
VOUT  
1V/div  
1V/div  
CL=100pF, RL=100kΩ, AV=-50  
f=1kHz, RL=10kΩ, VIN=6VPP, AV=1  
VIN=0 to -100mV  
Time (200μs/div)  
Time (20μs/div)  
Figure 50. No phase Reversal  
Figure 51. Overload Recovery Time  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
20  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Typical Performance Characteristics (Continued)  
VIN  
50mV/div  
V
V
CC=2.5V  
EE=-2.5V  
VOUT  
1V/div  
CL=100pF, RL=100kΩ, AV =-50,  
VIN=0 to -100mV  
Time (20μs/div)  
Figure 52. Overload Recovery Time  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
21  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Mechanical Dimensions  
SC-70-5  
Unit: mm(inch)  
0°  
8°  
2.000(0.079)  
2.200(0.087)  
0.150(0.006)  
0.350(0.014)  
0.200(0.008)  
0.260(0.010)  
0.460(0.018)  
0.525(0.021)REF  
0.650(0.026)TYP  
0.080(0.003)  
0.150(0.006)  
0.000(0.000)  
0.100(0.004)  
1.200(0.047)  
1.400(0.055)  
0.900(0.035)  
1.100(0.043)  
0.900(0.035)  
1.000(0.039)  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
22  
Advance Datasheet  
Single Low Bias Current, Low Voltage, Rail-to-Rail  
Input/Output CMOS Operational Amplifier  
AZV831  
Mechanical Dimensions (Continued)  
SOT-23-5  
Unit: mm(inch)  
2.820(0.111)  
3.020(0.119)  
0.100(0.004)  
0.200(0.008)  
0.200(0.008)  
0.700(0.028)  
REF  
0.300(0.012)  
0.400(0.016)  
0°  
8°  
0.950(0.037)  
TYP  
1.800(0.071)  
2.000(0.079)  
0.000(0.000)  
0.150(0.006)  
0.900(0.035  
)
1.300(0.051)  
Nov. 2011 Rev. 1. 1  
BCD Semiconductor Manufacturing Limited  
23  
BCD Semiconductor Manufacturing Limited  
http://www.bcdsemi.com  
- Headquarters  
- Wafer Fab  
BCD Semiconductor Manufacturing Limited  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.  
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China  
800 Yi Shan Road, Shanghai 200233, China  
Tel: +86-21-24162266, Fax: +86-21-24162277  
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008  
REGIONAL SALES OFFICE  
Shenzhen Office  
Taiwan Office  
USA Office  
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office  
BCD Semiconductor (Taiwan) Company Limited  
BCD Semiconductor Corp.  
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,  
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,  
30920 Huntwood Ave. Hayward,  
China  
Taiwan  
Tel: +886-2-2656 2808  
CA 94544, USA  
Tel: +86-755-8826 7951  
Tel : +1-510-324-2988  
Fax: +86-755-8826 7865  
Fax: +886-2-2656 2806  
Fax: +1-510-324-2788  
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