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RZF030P01

型号:

RZF030P01

描述:

1.5V驱动P沟道MOSFET[ 1.5V Drive Pch MOSFET ]

品牌:

ROHM[ ROHM ]

页数:

6 页

PDF大小:

245 K

1.5V Drive Pch MOSFET  
RZF030P01  
zDimensions (Unit : mm)  
zStructure  
Silicon P-channel  
MOSFET  
TUMT3  
zFeatures  
1) Low on-resistance.  
2) High power package.  
3) Low voltage drive. (1.5V)  
(1) Gate  
(2) Source  
(3) Drain  
Abbreviated symbol : YD  
zApplications  
Switching  
zPackaging specifications  
zEquivalent circuit  
Package  
Taping  
TL  
(3)  
Type  
Code  
Basic ordering unit (pieces)  
3000  
RZF030P01  
2  
(1)  
1  
(2)  
(1) Gate  
(2) Source  
(3) Drain  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Symbol  
Limits  
Unit  
V
VDSS  
VGSS  
ID  
12  
10  
Gate-source voltage  
V
Continuous  
Pulsed  
3
A
Drain current  
1  
1  
IDP  
12  
A
Source current  
(Body diode)  
Continuous  
Pulsed  
IS  
0.65  
12  
0.8  
A
ISP  
A
2  
Total power dissipation  
Channel temperature  
PD  
W
°C  
°C  
Tch  
Tstg  
150  
Range of Storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Rth(ch-a) ∗  
Limits  
156  
Unit  
Channel to ambient  
Mounted on a ceramic board.  
°C / W  
www.rohm.com  
c
2009.01 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
1/5  
RZF030P01  
Data Sheet  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
µA VGS= 10V, VDS=0V  
Unit  
Gate-source leakage  
IGSS  
10  
Drain-source breakdown voltage V(BR) DSS 12  
Zero gate voltage drain current  
V
µA  
V
ID= 1mA, VGS=0V  
IDSS  
1  
1.0  
39  
54  
76  
144  
V
DS= 12V, VGS=0V  
DS= 6V, ID= 1mA  
Gate threshold voltage  
VGS (th) 0.3  
V
28  
39  
51  
72  
1860  
210  
200  
9
mID= 3A, VGS= 4.5V  
mID= 1.5A, VGS= 2.5V  
mID= 1.5A, VGS= 1.8V  
mID= 0.6A, VGS= 1.5V  
Static drain-source on-state  
resistance  
RDS (on)  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
5
S
V
V
V
DS= 6V, ID= 3A  
DS= 6V  
GS=0V  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
Coss  
Crss  
td (on)  
f=1MHz  
I
V
V
R
D
= 1.5A  
DD 6V  
GS= 4.5V  
t
r
40  
210  
120  
18  
3.0  
2.5  
Turn-off delay time  
Fall time  
td (off)  
tf  
L
4Ω  
=10Ω  
R
G
Total gate charge  
Gate-source charge  
Qg  
nC VDD 6V  
nC ID= 3A  
R
L
2Ω  
=10Ω  
Qgs  
Qgd  
RG  
Gate-drain charge  
nC  
VGS= 4.5V  
Pulsed  
zBody diode characteristics (Source -drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
IS= 3A, VGS=0V  
Unit  
V
Forward voltage  
V
SD  
1.2  
Pulsed  
www.rohm.com  
c
2009.01 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
2/5  
RZF030P01  
Data Sheet  
zElectrical characteristic curves  
10  
10  
10  
1
VGS= - 10V  
Ta=25  
pulsed  
Ta=25  
pulsed  
VDS= - 6V  
pulsed  
VGS= - 10V  
VGS= - 2.4V  
VGS= - 4.5V  
VGS= - 4.5V  
VGS= - 1.8V  
VGS= - 1.6V  
VGS= - 1.8V  
Ta=125  
VGS= - 1.6V  
Ta=75  
0.1 Ta=25  
5
5
VGS= - 1.4V  
VGS= - 1.2V  
Ta=-25  
VGS= - 1.4V  
VGS= - 1.2V  
0.01  
VGS= - 1.0V  
VGS= -1.0V  
0.001  
0
0
0.0  
0.5  
1.0  
1.5  
0.0  
2.0  
4.0  
6.0  
8.0  
10.0  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
GATE-SOURCE VOLTAGE: - VGS [V]  
DRAIN-SOURCE VOLTAGE : -VDS [V]  
DRAIN-SOURCE VOLTAGE : -VDS [V]  
Fig.2 Typical Output Characteristics (  
Fig.1 Typical Output Characteristics (Ι)  
)
Fig.3 Typical Transfer Characteristics  
1000  
100  
10  
1000  
250  
VGS= - 4.5V  
pulsed  
Ta=25  
pulsed  
Ta=25  
pulsed  
200  
150  
100  
50  
VGS= - 1.5V  
VGS= - 1.8V  
VGS= - 2.5V  
VGS= - 4.5V  
Ta=125  
ID= - 1.5A  
ID= - 3.0A  
Ta=75  
Ta=25  
100  
Ta=-25  
0
10  
0.01  
0
2
4
6
8
10  
0.1  
1
10  
0.01  
0.1  
1
10  
GATE-SOURCE CURRENT : -VGS [V]  
DRAIN CURRENT : - ID [A]  
DRAIN CURRENT : - ID [A]  
Fig.6 Static Drain-Source On-State  
Resistance vs.Drain Current  
Fig.5 Static Drain-Source On-State  
Resistance vs.Gate-Source Voltage  
Fig.4 Static Drain-Source On-State  
Resistance vs.Drain Current  
1000  
1000  
1000  
VGS= - 2.5V  
pulsed  
VGS= - 1.5V  
pulsed  
VGS= - 1.8V  
pulsed  
Ta=125  
Ta=125  
Ta=75  
Ta=25  
Ta=75  
Ta=25  
Ta=125  
Ta=-25  
Ta=-25  
Ta=75  
Ta=25  
Ta=-25  
100  
100  
10  
100  
10  
10  
0.01  
0.01  
0.1  
1
10  
0.01  
0.1  
1
10  
0.1  
1
10  
DRAIN CURRENT : - ID [A]  
DRAIN CURRENT : - ID [A]  
DRAIN CURRENT : - ID [A]  
Fig.8 Static Drain-Source On-State  
Resistance vs. Drain Current  
Fig.9 Static Drain-Source On-State  
Resistance vs. Drain Current  
Fig.7 Static Drain-Source On-State  
Resistance vs. Drain Current  
www.rohm.com  
c
2009.01 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
3/5  
RZF030P01  
Data Sheet  
100  
10  
1
10  
10000  
1000  
100  
VDS= - 6V  
pulsed  
VGS=0V  
pulsed  
Ciss  
1
Coss  
Ta=125  
Ta=75  
Ta=25  
Crss  
Ta=125  
0.1  
Ta=75  
Ta=25  
Ta=25  
f=1MHz  
VGS=0V  
Ta=-25  
Ta=-25  
10  
0.01  
0.1  
0.01  
0.1  
1
10  
100  
0.0  
0.5  
1.0  
1.5  
0.01  
0.1  
1
10  
DRAIN-SOURCE VOLTAGE : -VDS [V]  
SOURCE DRAIN VOLTAGE : - VSD [V]  
DRAIN CURRENT : - ID [A]  
Fig.12 Typical Capacitance  
vs. Drain-Source Voltage  
Fig.11 Forward Transfer Admittance  
vs. Drain Current  
Fig.10 Source Current vs.  
Source-Drain Voltage  
10000  
1000  
100  
10  
Ta=25  
Ta=25  
VDD=-6V  
VGS= - 4.5V  
RG=10  
Pulsed  
4
3
2
1
V
DD= - 6V  
ID= - 3A  
RG=10Ω  
Pulsed  
tf  
td(off)  
td(on)  
tr  
1
0
0
0.01  
0.1  
1
10  
5
10  
15  
20  
DRAIN CURRENT : -ID [A]  
TOTAL GATE CHARGE : Qg [nC]  
Fig.14 Dynamic Input Characteristics  
Fig.13 Switching Characteristics  
www.rohm.com  
c
2009.01 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
4/5  
RZF030P01  
Data Sheet  
zMeasurement circuits  
Pulse Width  
V
GS  
I
D
VGS  
10%  
50%  
V
DS  
50%  
90%  
RL  
10%  
90%  
10%  
90%  
D.U.T.  
V
DD  
RG  
V
DS td(on)  
td(off)  
t
r
tf  
t
on  
toff  
Fig.1-2 Switching Waveforms  
Fig.1-1 Switching Time Measurement Circuit  
V
G
I
D
V
DS  
Q
g
V
GS  
RL  
V
GS  
D.U.T.  
I
G(Const.)  
Q
gs  
Qgd  
V
DD  
RG  
Charge  
Fig.2-1 Gate Charge Measurement Circuit  
Fig.2-2 Gate Charge Waveforms  
zNotice  
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD  
protection circuit.  
www.rohm.com  
c
2009.01 - Rev.A  
2009 ROHM Co., Ltd. All rights reserved.  
5/5  
Appendix  
Notes  
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM  
CO.,LTD.  
The content specified herein is subject to change for improvement without notice.  
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you  
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM  
upon request.  
Examples of application circuits, circuit constants and any other information contained herein illustrate the  
standard usage and operations of the Products. The peripheral conditions must be taken into account  
when designing circuits for mass production.  
Great care was taken in ensuring the accuracy of the information specified in this document. However, should  
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no re-  
sponsibility for such damage.  
The technical information specified herein is intended only to show the typical functions of and examples  
of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to  
use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no re-  
sponsibility whatsoever for any dispute arising from the use of such technical information.  
The Products specified in this document are intended to be used with general-use electronic equipment  
or devices (such as audio visual equipment, office-automation equipment, communication devices, elec-  
tronic appliances and amusement devices).  
The Products are not designed to be radiation tolerant.  
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or  
malfunction for a variety of reasons.  
Please be sure to implement in your equipment using the Products safety measures to guard against the  
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as  
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your  
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.  
The Products are not designed or manufactured to be used with any equipment, device or system  
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct  
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,  
aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear  
no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intend-  
ed to be used for any such special purpose, please contact a ROHM sales representative before purchasing.  
If you intend to export or ship overseas any Product or technology specified herein that may be controlled under  
the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact your nearest sales office.  
THE AMERICAS / EUROPE / ASIA / JAPAN  
ROHM Customer Support System  
Contact us : webmaster@ rohm.co.jp  
www.rohm.com  
TEL : +81-75-311-2121  
FAX : +81-75-315-0172  
Copyright © 2009 ROHM Co.,Ltd.  
21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan  
Appendix-Rev4.0  
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