8TQ...G
Vishay High Power Products
Schottky Rectifier, 8 A
FEATURES
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
Base
cathode
2
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
1
3
• Designed and qualified for industrial level
TO-220AC
Cathode Anode
DESCRIPTION
The 8TQ...G Schottky rectifier series has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
IF(AV)
8 A
VR
80/100 V
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
8
UNITS
Rectangular waveform
Range
A
V
80/100
850
tp = 5 µs sine
8 Apk, TJ = 125 °C
Range
A
VF
0.58
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
8TQ080G
8TQ100G
UNITS
Maximum DC reverse voltage
VR
80
100
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 157 °C, rectangular waveform
VALUES
UNITS
Maximum average forward current
See fig. 5
IF(AV)
8
A
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Following any rated load
condition and with rated
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse
850
IFSM
A
230
V
RRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 0.50 A, L = 60 mH
7.50
mJ
A
Current decaying linearly to zero in 1 µs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.50
Document Number: 93415
Revision: 03-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
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