COMMUNICATIONS COMPONENTS
2.5 Gb/s Front-Illuminated APD Chip
Key Features
• Front illuminated device for ease of assembly, with 53 micron
diameter active region
• -40 to 85 °C operating temperature range
• -33 dBm typical sensitivity (TIA dependent)
• Better than -6 dBm overload performance (TIA dependent)
• Uses proven, highly reliable JDSU APD designs
Applications
The JDSU 2.5 Gb/s front-illuminated avalanche photodiode (FI-APD) is designed
for Gigabit Passive Optical Networks (GPON) that enable data transmissions for
fiber-to-the-home (FTTH) offerings. As a result of their internal gain, APDs can
significantly enhance receiver sensitivity relative to a standard PI photodiode.
• GPON
• SONET OC-48
• Ethernet
This FI-APD uses JDSU proprietary APD designs known for their superior
reliability. The dark current at 95% of breakdown voltage is typically in the sub-
nano-amp range. It has an optical window of 53 µm, and a remote metal bond
pad of 60 µm. The FI-APD has an operating temperature range from -40 °C to
85 °C, and the sensitivity with a low noise TIA can reach -33 dBm.
Compliance
• Fully qualified for Telcordia
GR-468-CORE
• RoHS compliant
All APD chips come from wafers that have JDSU qualifed. Qualification includes
burn-in and functional testing of a sample quantity of chips from each wafer..
Each die shipped is tested at 25 °C.
NORTH AMERICA: 800 498-JDSU (5378)
WORLDWIDE: +800 5378-JDSU
WEBSITE: www.jdsu.com
