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NZ23C5V6ALT1G

型号:

NZ23C5V6ALT1G

描述:

24瓦峰值功率齐纳瞬态电压抑制器SOT- 23双共阳极齐纳二极管的ESD保护[ 24 Watt Peak Power Zener Transient Voltage Suppressors SOT−23 Dual Common Anode Zeners for ESD Protection ]

品牌:

ONSEMI[ ONSEMI ]

页数:

7 页

PDF大小:

140 K

NZ23C5V6ALT1G  
24 Watt Peak Power  
Zener Transient Voltage  
Suppressors  
SOT23 Dual Common Anode Zeners  
for ESD Protection  
http://onsemi.com  
This dual monolithic silicon Zener diodes is designed for applications  
requiring transient overvoltage protection capability. This is intended  
for use in voltage and ESD sensitive equipment such as computers,  
printers, business machines, communication systems, medical  
equipment and other applications. The dual junction common anode  
design protects two separate lines using only one package. This device  
is ideal for situations where board space is at a premium.  
1
2
3
MARKING  
DIAGRAM  
3
Features  
SOT23  
CASE 318  
STYLE 12  
5V6MG  
G
SOT23 Package Allows Either Two Separate Unidirectional  
Configurations or a Single Bidirectional Configuration  
Working Peak Reverse Voltage Range 3 V  
1
1
2
Standard Zener Breakdown Voltage Range 5.6 V  
5V6 = Specific Device Code  
M
= Date Code  
= PbFree Package  
Peak Power 24 W @ 1.0 ms (Unidirectional),  
G
per Figure 5 Waveform  
(Note: Microdot may be in either location)  
ESD Rating:  
Class 3B (>16 kV) per the Human Body Model  
Class C (>400 V) per the Machine Model  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
Maximum Clamping Voltage @ Peak Pulse Current  
Low Leakage < 0.1 mA  
Flammability Rating UL 94 V0  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the table on page 2 of this data sheet.  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
Compliant  
Mechanical Characteristics  
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
Package designed for optimal automated board assembly  
Small package size for high density applications  
Available in 8 mm Tape and Reel  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 Rev. 0  
NZ23C5V6AL/D  
NZ23C5V6ALT1G  
MAXIMUM RATINGS  
Rating  
Peak Power Dissipation @ 1.0 ms (Note 1) @ T 25°C  
Symbol  
Value  
Unit  
P
pk  
24  
W
L
Total Power Dissipation on FR5 Board (Note 2) @ T = 25°C  
°P °  
D
225  
1.8  
°mW°  
mW/°C  
A
Derate above 25°C  
Thermal Resistance JunctiontoAmbient  
R
556  
°C/W  
q
JA  
Total Power Dissipation on Alumina Substrate (Note 3) @ T = 25°C  
°P °  
D
300  
2.4  
°mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance JunctiontoAmbient  
Junction and Storage Temperature Range  
Lead Solder Temperature Maximum (10 Second Duration)  
R
417  
55 to +150  
260  
°C/W  
°C  
q
JA  
T , T  
J
stg  
T
°C  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. Nonrepetitive current pulse per Figure 5 and derate above T = 25°C per Figure 6.  
A
2. FR5 = 1.0 x 0.75 x 0.62 in.  
3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.  
*Other voltages may be available upon request.  
ELECTRICAL CHARACTERISTICS  
I
(T = 25°C unless otherwise noted)  
A
I
F
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)  
Symbol  
Parameter  
I
PP  
Maximum Reverse Peak Pulse Current  
V
Clamping Voltage @ I  
PP  
C
V
C
V
V
BR RWM  
V
I
V
F
V
Working Peak Reverse Voltage  
R
T
RWM  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
T
I
PP  
QV  
Maximum Temperature Coefficient of V  
Forward Current  
BR  
BR  
I
F
UniDirectional TVS  
V
F
Forward Voltage @ I  
F
Z
Maximum Zener Impedance @ I  
Reverse Current  
ZT  
ZT  
I
ZK  
Z
ZK  
Maximum Zener Impedance @ I  
ZK  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)  
(VF = 0.9 V Max @ IF = 10 mA)  
24 WATTS  
Max Zener  
V @ I  
C PP  
Impedance (Note 5)  
(Note 6)  
Breakdown Voltage  
Z
ZT  
@
20mA  
I
V
@
RWM  
mA  
R
V
(Note 4) (V)  
@ I  
Z
ZK  
@ I  
V
C
I
PP  
V
RWM  
QV  
BR  
BR  
T
ZK  
Device  
mV/5C  
1.26  
Volts  
Min  
Nom  
Max  
mA  
W
W
mA  
V
A
Marking  
Device  
NZ23C5V6ALT1G  
5V6  
1.0  
0.1  
5.2  
5.6  
6.0  
5.0  
11  
1600 0.25  
8.0  
3.0  
4. V measured at pulse test current I at an ambient temperature of 25°C.  
BR  
T
5. Z and Z are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I  
ZT  
= 0.1 I  
ZK  
Z(AC)  
, with the AC frequency = 1.0 kHz.  
Z(DC)  
6. Surge current waveform per Figure 5 and derate per Figure 6  
http://onsemi.com  
2
 
NZ23C5V6ALT1G  
TYPICAL CHARACTERISTICS  
18  
15  
12  
9
1000  
100  
10  
1
6
3
0
0.1  
0.01  
40  
0
+50  
+100  
+150  
40  
+25  
+85  
+125  
TEMPERATURE (°C)  
TEMPERATURE (°C)  
Figure 1. Typical Breakdown Voltage  
versus Temperature  
Figure 2. Typical Leakage Current  
versus Temperature  
(Upper curve is bidirectional mode,  
lower curve is unidirectional mode)  
320  
300  
280  
240  
200  
160  
120  
80  
250  
200  
ALUMINA SUBSTRATE  
5.6 V  
150  
100  
50  
FR5 BOARD  
40  
0
0
0
1
2
3
0
25  
50  
75  
100  
125  
150  
175  
BIAS (V)  
TEMPERATURE (°C)  
Figure 3. Typical Capacitance versus Bias Voltage  
(Upper curve is unidirectional mode,  
Figure 4. Steady State Power Derating Curve  
lower curve is bidirectional mode)  
http://onsemi.com  
3
NZ23C5V6ALT1G  
TYPICAL CHARACTERISTICS  
100  
PULSE WIDTH (t ) IS DEFINED  
P
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
AS THAT POINT WHERE THE  
PEAK CURRENT DECAYS TO  
t 10 ms  
r
50% OF I .  
PP  
100  
PEAK VALUE I  
PP  
I
PP  
HALF VALUE −  
2
50  
0
t
P
0
1
2
3
4
0
25  
50  
75  
100  
125  
150 175 200  
t, TIME (ms)  
T , AMBIENT TEMPERATURE (°C)  
A
Figure 5. Pulse Waveform  
Figure 6. Pulse Derating Curve  
100  
100  
10  
1
RECTANGULAR  
WAVEFORM, T = 25°C  
RECTANGULAR  
WAVEFORM, T = 25°C  
A
A
BIDIRECTIONAL  
BIDIRECTIONAL  
10  
UNIDIRECTIONAL  
UNIDIRECTIONAL  
1
0.1  
1
10  
100  
1000  
0.1  
1
10  
100  
1000  
PW, PULSE WIDTH (ms)  
PW, PULSE WIDTH (ms)  
Figure 7. Maximum Nonrepetitive Surge  
Figure 8. Maximum Nonrepetitive Surge  
Power, Ppk versus PW  
Power, Ppk(NOM) versus PW  
Power is defined as V  
x I (pk) where V  
is  
Power is defined as V (NOM) x I (pk) where  
Z Z  
RSM  
Z
RSM  
the clamping voltage at I (pk).  
V (NOM) is the nominal Zener voltage measured at  
Z
Z
the low test current used for voltage classification.  
http://onsemi.com  
4
NZ23C5V6ALT1G  
TYPICAL COMMON ANODE APPLICATIONS  
A quad junction common anode design in a SOT23  
package protects four separate lines using only one package.  
This adds flexibility and creativity to PCB design especially  
when board space is at a premium. Two simplified examples  
of TVS applications are illustrated below.  
Computer Interface Protection  
A
B
C
D
KEYBOARD  
TERMINAL  
PRINTER  
ETC.  
FUNCTIONAL  
DECODER  
I/O  
GND  
NZ23C5V6ALT1G  
Microprocessor Protection  
V
V
DD  
GG  
ADDRESS BUS  
RAM  
ROM  
DATA BUS  
CPU  
NZ23C5V6ALT1  
G
I/O  
CLOCK  
CONTROL BUS  
GND  
NZ23C5V6ALT1G  
http://onsemi.com  
5
NZ23C5V6ALT1G  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NZ23C5V6ALT1G  
SOT23  
(PbFree)  
3000 Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
6
NZ23C5V6ALT1G  
PACKAGE DIMENSIONS  
SOT23 (TO236)  
CASE 31808  
ISSUE AN  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD  
THICKNESS IS THE MINIMUM THICKNESS OF  
BASE MATERIAL.  
D
SEE VIEW C  
3
4. 31801 THRU 07 AND 09 OBSOLETE, NEW  
STANDARD 31808.  
H
E
E
MILLIMETERS  
INCHES  
c
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.09  
2.80  
1.20  
1.78  
0.10  
0.35  
2.10  
NOM  
1.00  
0.06  
0.44  
0.13  
2.90  
1.30  
1.90  
0.20  
0.54  
2.40  
MAX  
MIN  
NOM  
0.040  
0.002  
0.018  
0.005  
0.114  
0.051  
0.075  
0.008  
0.021  
0.094  
MAX  
0.044  
0.004  
0.020  
0.007  
0.120  
0.055  
0.081  
0.012  
0.029  
0.104  
1.11  
0.10  
0.50  
0.18  
3.04  
1.40  
2.04  
0.30  
0.69  
2.64  
0.035  
0.001  
0.015  
0.003  
0.110  
0.047  
0.070  
0.004  
0.014  
0.083  
1
2
b
0.25  
e
q
A
L1  
H
E
L
A1  
STYLE 12:  
L1  
VIEW C  
PIN 1. CATHODE  
2. CATHODE  
3. ANODE  
SOLDERING FOOTPRINT  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
0.8  
0.031  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NZ23C5V6AL/D  
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