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CZRB2011

型号：

CZRB2011

描述：

表面贴装稳压二极管[ Surface Mount Zener Diode ]

品牌：

COMCHIP[ COMCHIP TECHNOLOGY ]

页数：

5 页

PDF大小：

98 K

下载PDF手册
Surface Mount Zener Diode  
CCOMCHIP  
www.comchip.com.tw  
CZRB2011 Thru CZRB2100  
Voltage: 11 - 100 Volts  
Power: 2.0 Watt  
Features  
- For surf ace mounted applications in order to  
optimize board space  
- Low profile package  
- Built-in strain relief  
SMB/DO-214AA  
- Glass passivated junction  
- Low inductance  
0.083(2.11)  
0.155(3.94)  
0.130(3.30)  
- Excellent clamping capability  
0.075(1.91)  
- Typical ID less than 1uA above 11V  
0.185(4.70)  
0.160(4.06)  
- High temperature soldering 260°C /10  
seconds at terminals  
0.012(0.31)  
0.006(0.15)  
0.096(2.44)  
0.083(2.13)  
- Plastic package has underwriters laboratory  
flammability classification 94V-O  
0.008(0.20)  
0.203(0.10)  
0.050(1.27)  
0.030(0.76)  
0.220(5.59)  
0.200(5.08)  
Mechanical data  
- Case: JEDEC DO-214AA, Molded plastic  
over passivated junction  
Dimensions in inches and (maillimeter)  
- Terminals: Solder plated, solderable per MIL-  
STD-750, method 2026  
- Polarity: Color band denotes positive end  
(cathode) except Bidirectional  
- Standard Packaging: 12mm tape (EIA-481)  
- Weight: 0.002 ounce, 0.064 gram  
Maximum Ratings and Electrical Characterics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Rating  
Peak Pulse Power Dissipation (Note A)  
Derate above 75°C  
Symbol  
Value  
2
24  
Units  
Watts  
mW/°C  
PD  
Peak forward Surge Current 8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) (Note B)  
Operating Junction and Storage Temperature Range  
IFSM  
15  
Amps  
°C  
TJ,TSTG  
-55 to +150  
Page 1  
MDS0302004A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
Rating and Characteristic Curevs (CZRB2011 Thru CZRB2100)  
ELECTRICAL CHARACTERISTICS  
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)  
Nominal  
Zener  
Voltage VZ  
@ IZT  
(Note 2.)  
(Volts)  
11  
Maximum Zener Impedance  
Surge  
Current  
@TA=25°C  
(Note 4.)  
Test  
current  
IZT  
Leakage Current Maximum  
Zener  
(Note 3.)  
Device  
(Note 1.)  
Current IZM  
ZZT @ IZT ZZK @ IZK  
IR  
IZK  
VR  
(mA)  
45.5  
41.5  
38.5  
35.7  
33.4  
31.2  
29.4  
27.8  
26.3  
25  
22.8  
20.8  
18.5  
16.6  
15.1  
13.9  
12.8  
11.6  
10.6  
9.8  
(Ohms)  
4
4.5  
5
5.5  
7
8
(Ohms)  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
750  
750  
(mA)  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
(uA)  
1.0  
1.0  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
(Volts)  
8.4  
9.1  
9.9  
10.6  
11.4  
12.2  
13  
13.7  
14.4  
15.2  
16.7  
18.2  
20.6  
22.5  
25.1  
27.4  
29.7  
32.7  
35.6  
38.8  
42.6  
47.1  
51.7  
56  
(mA)  
166  
152  
138  
130  
122  
114  
107  
100  
95  
90  
82  
76  
68  
60  
55  
50  
47  
43  
39  
36  
32  
29  
27  
24  
22  
Ir - mA  
1.82  
1.66  
1.54  
1.43  
1.33  
1.25  
1.18  
1.11  
1.05  
1.00  
0.91  
0.83  
0.74  
0.67  
0.61  
0.56  
0.51  
0.45  
0.42  
0.39  
0.36  
0.32  
0.29  
0.27  
0.24  
0.22  
0.20  
CZRB2011  
CZRB2012  
CZRB2013  
CZRB2014  
CZRB2015  
CZRB2016  
CZRB2017  
CZRB2018  
CZRB2019  
CZRB2020  
CZRB2022  
CZRB2024  
CZRB2027  
CZRB2030  
CZRB2033  
CZRB2036  
CZRB2039  
CZRB2043  
CZRB2047  
CZRB2051  
CZRB2056  
CZRB2062  
CZRB2068  
CZRB2075  
CZRB2082  
CZRB2091  
CZRB2100  
12  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
82  
9
10  
11  
11  
12  
13  
18  
20  
23  
25  
30  
35  
40  
48  
55  
60  
75  
90  
100  
125  
175  
750  
1000  
1000  
1000  
1000  
1500  
1500  
1500  
2000  
2000  
2000  
2000  
3000  
3000  
3000  
9
8.1  
7.4  
6.7  
6.1  
5.5  
5
62.2  
69.2  
76  
91  
100  
20  
18  
NOTE:  
1. TOLERANCES - Suffix indicates 5% tolerance any other tolerance will be considered as a special device.  
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms 10ms  
from the diode body, and an ambient temperature of 25 °C (+ 8 °C , -2 °C ).  
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,  
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is  
superimposed on IZT or IZK  
.
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is  
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse  
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual  
device capability is as described in Figure 3.  
Page 2  
MDS0302004A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRB2011 Thru CZRB2100)  
30  
20  
D = 0.5  
0.2  
10  
7
5
0.1  
3
2
0.05  
0.02  
NOTE BELOW 0.1 SECOND,  
THERMAL RESPONSE  
CURVE IS APPLICABLE TO  
ANY LEAD LENGTH (L)  
1
0.7  
0.5  
SINGLE PULSE  
TJL = JL(t)PPK  
REPETITIVE PULSES TJL =  
JL(t,D)PPK  
0.01  
D = 0  
0.3  
0.0001 0.0002 0.0005 0.001 0.002  
0.005 0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
Fig. 2-TYPICAL THERMAL RESPONSE L,  
1K  
500  
300  
200  
RECTANGULAR NONREPETITIVE  
WAVEFORM TJ = 25°C PRIOR TO  
INITIAL PULSE  
0.1  
0.05  
0.03  
0.02  
100  
50  
0.01  
0.005  
0.003  
0.002  
30  
20  
0.001  
0.0005  
0.0003  
0.0002  
0.0001  
10  
.1  
.2 .3  
5
1
2 3 5  
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
200  
500  
1K  
P.W. PULSE WIDTH (ms)  
NOMINAL VZ (VOLTS)  
Fig. 3-MAXIMUM SURGE POWER  
Fig. 4-TYPICAL REVERSE LEAKAGE  
8
6
200  
100  
4
2
RANGE  
50  
40  
30  
RANGE  
0
-2  
-4  
20  
3
4
6
8
10  
12  
10  
0
20  
40  
60  
80 100  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
Fig. 5 - UNITS TO 12 VOLTS  
Fig. 6 - UNITS 10 TO 100 VOLTS  
Page 3  
MDS0302004A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRB2011 Thru CZRB2100)  
100  
100  
50  
30  
20  
10  
50  
30  
20  
10  
5
3
2
5
3
2
1
1
0.5  
0.3  
0.2  
0.5  
0.3  
0.2  
0.1  
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
10 20 30 40 50 60 70 80 90 100  
VZ, ZENER VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
80  
70  
60  
50  
40  
30  
20  
10  
0
PRIMARY PATH OF  
CONDUCTION IS THROUGH  
THE CATHODE LEAD  
0
1/8  
1/4  
3/8  
1/2  
5/8  
3/4  
7/8  
1
L, LEAD LENGTH TO HEAT SINK (INCH)  
Fig. 9 -TYPICAL THERMAL RESISTANCE  
Page 4  
MDS0302004A  
Surface Mount Zener Diode  
COMCHIP  
www.comchip.com.tw  
¨TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
¨TJL = șLAPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ (¨TJL ) may be estimated.  
Changes in voltage, Vz, can then be found from:  
¨V = șVZ ¨TJ  
APPLICATION NOTE:  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
Lead Temperature, TL, should be determined from:  
TL = șLAPD + TA  
șLA is the lead-to-ambient thermal resistance (°C/W)  
and PD is the power dissipation. The value for șLA will  
vary and depends on the device mounting method.  
șLA is generally 30-40 °C/W for the various chips and  
tie points in common use and for printed circuit board  
wiring.  
șVZ , the zener voltage temperature coefficient, is  
found from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
excursions as low as possible.  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure 3 be  
exceeded.  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible to  
the tie point. The thermal mass connected to the tie point  
is normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result  
of pulsed operation once steady-state conditions are  
achieved. Using the measured value of TL, the junction  
temperature may be determined by:  
TJ = TL + ¨TJL  
MDS0302004A  
Page 5  
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