HZS Series
SILICON EPITAXIAL PLANER ZENER DIODES
for Stabilized Power Supply
Max. 0.45
Features
Min. 27.5
Max. 2.9
Min. 27.5
Max. 1.9
• Low leakage, low zener impedance and maximum
power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
Black
Cathode Band
Black
Part No.
XXX
• Wide spectrum from 1.6 V through 38 V of zener
voltage provide flexible application.
Glass Case DO-34
Dimensions in mm
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Ptot
Value
Unit
mW
Power Dissipation
400
200
O
C
Junction Temperature
Tj
O
C
Storage Temperature Range
TS
- 55 to + 175
O
Characteristics at Ta = 25 C
Zener Voltage 1)
Reverse Current
IR (µA)
Dynamic Resistance
Type
VZ (V)
Max.
rd (Ω)
Min.
IZ (mA)
5
Max.
VR (V)
Max.
100
lZ (mA)
5
HZS2A1
1.6
1.7
1.8
1.9
2
1.8
1.9
2
25
5
0.5
HZS2A2
HZS2A3
HZS2B1
HZS2B2
HZS2B3
HZS2C1
HZS2C2
HZS2C3
HZS3A1
HZS3A2
HZS3A3
HZS3B1
HZS3B2
HZS3B3
HZS3C1
HZS3C2
HZS3C3
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
5
0.5
100
5
5
5
0.5
100
5
3.1
3.2
3.3
3.4
3.5
3.1
3.2
3.3
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/06/2007
