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HZL6.8Z4

型号:

HZL6.8Z4

描述:

硅平面齐纳二极管的浪涌吸收[ Silicon Planar Zener Diode for Surge Absorb ]

品牌:

RENESAS[ RENESAS TECHNOLOGY CORP ]

页数:

5 页

PDF大小:

81 K

HZL6.2Z4  
Silicon Planar Zener Diode for Surge Absorb  
REJ03G0409-0100  
Rev.1.00  
Oct 01, 2004  
Features  
Low capacitance (C = 4.0 pF max) and can protect ESD of signal line.  
Extremely small Flat Package (EFP) is suitable for surface mount design.  
Ordering Information  
Type No.  
Laser Mark  
Package Code  
EFP  
HZL6.2Z4  
Y
Pin Arrangement  
Cathode mark  
Mark  
1
2
1. Cathode  
2. Anode  
Rev.1.00, Oct 01, 2004, page 1 of 4  
HZL6.2Z4  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Symbol  
Value  
100  
Power dissipation  
Junction temperature  
Storage temperature  
Note: See Fig.2.  
Pd *  
mW  
°C  
Tj  
150  
Tstg  
55 to +150  
°C  
Electrical Characteristics  
(Ta = 25°C)  
Test Condition  
IZ = 5 mA, 40 ms pulse  
Item  
Symbol  
Min  
5.90  
Typ  
Max  
6.50  
3
Unit  
Zener voltage  
Reverse current  
Capacitance  
VZ  
IR  
V
µA  
pF  
VR = 5.5 V  
C
4.0  
60  
VR = 0 V, f = 1 MHz  
IZ = 5 mA  
Dynamic resistance rd  
ESD-Capability *1  
8
kV  
C = 150 pF, R = 330 , Both Forward  
and reverse direction 10 pulse  
Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V.  
2. Please do not use the soldering iron due to avoid high stress to the EFP package.  
3. The material of lead is exposed for cutting plane. There for, soldering nature of lead tip part is  
considered as unquestioned. Please kindly consider soldering nature.  
Rev.1.00, Oct 01, 2004, page 2 of 4  
HZL6.2Z4  
Main Characteristic  
10–2  
250  
200  
150  
100  
50  
Polyimide board  
20h×15w×0.8t  
1.5  
10–3  
10–4  
10–5  
10–6  
1.5  
unit: mm  
0
0
2
4
6
8
10  
0
50  
100  
150  
200  
Zener Voltage VZ (V)  
Ambient Temperature Ta (°C)  
Fig.1 Zener current vs. Zener voltage  
Fig.2 Power Dissipation vs. Ambient Temperature  
104  
PRSM  
t
Ta = 25°C  
nonrepetitive  
103  
102  
10  
1.0  
10-2  
10-1  
1.0  
10  
102  
103  
Time t (ms)  
Fig.3 Surge Reverse Power Ratings  
Rev.1.00, Oct 01, 2004, page 3 of 4  
HZL6.2Z4  
Package Dimensions  
As of January, 2003  
Unit: mm  
0.8 ± 0.05  
1.0 ± 0.05  
Package Code  
JEDEC  
EFP  
JEITA  
Mass (reference value)  
0.0007 g  
Rev.1.00, Oct 01, 2004, page 4 of 4  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Keep safety first in your circuit designs!  
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble  
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,  
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
Notes regarding these materials  
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's  
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.  
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,  
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.  
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of  
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is  
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product  
information before purchasing a product listed herein.  
The information described here may contain technical inaccuracies or typographical errors.  
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.  
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor  
home page (http://www.renesas.com).  
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to  
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes  
no responsibility for any damage, liability or other loss resulting from the information contained herein.  
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life  
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a  
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater  
use.  
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.  
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and  
cannot be imported into a country other than the approved destination.  
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.  
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.  
RENESAS SALES OFFICES  
http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
Renesas Technology America, Inc.  
450 Holger Way, San Jose, CA 95134-1368, U.S.A  
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501  
Renesas Technology Europe Limited  
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.  
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900  
Renesas Technology Hong Kong Ltd.  
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong  
Tel: <852> 2265-6688, Fax: <852> 2730-6071  
Renesas Technology Taiwan Co., Ltd.  
10th Floor, No.99, Fushing North Road, Taipei, Taiwan  
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999  
Renesas Technology (Shanghai) Co., Ltd.  
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China  
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952  
Renesas Technology Singapore Pte. Ltd.  
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632  
Tel: <65> 6213-0200, Fax: <65> 6278-8001  
© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .2.0  
厂商 型号 描述 页数 下载

RENESAS

HZL6.2Z4 硅平面齐纳二极管的浪涌吸收[ Silicon Planar Zener Diode for Surge Absorb ] 5 页

RENESAS

HZL6.2Z4-E [ ZENER DIODE,SINGLE, TWO TERMINAL,6.2V V(Z),4.8%,EMD2VAR ] 5 页

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