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HYS64T256022EDL

型号:

HYS64T256022EDL

描述:

200针双芯片小外形- DDR2 -SDRAM模块[ 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules ]

品牌:

QIMONDA[ QIMONDA AG ]

页数:

40 页

PDF大小:

2384 K

November 2006  
HYS64T256022EDL–[25F/2.5]–B  
HYS64T256022EDL–[3/3S]–B  
HYS64T256022EDL–3.7–B  
200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules  
DDR2 SDRAM  
SO-DIMM SDRAM  
RoHS Compliant  
Internet Data Sheet  
Rev. 1.0  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
HYS64T256022EDL–[25F/2.5]–B; HYS64T256022EDL–[3/3S]–B; HYS64T256022EDL–3.7–B  
Revision History: 2006-11, Rev. 1.0  
Page  
Subjects (major changes since last revision)  
All  
All  
Adapted internet edition  
Initial Document  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
techdoc@qimonda.com  
qag_techdoc_rev400 / 3.2 QAG / 2006-08-01  
11172006-DXYK-2PPW  
2
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
1
Overview  
This chapter gives an overview of the 200-Pin Dual Die Small-Outline-DDR2-SDRAM Modules product family and describes  
its main characteristics.  
1.1  
Features  
200-Pin PC2-6400, PC2–5300 and PC2-4200 DDR2  
SDRAM memory modules.  
256M × 64 module organization, and 2 × 128M × 8 chip  
organization  
Standard Double-Data-Rate-Two Synchronous DRAMs  
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power  
supply  
2GB Modules built with stacked 1Gb DDR2 SDRAMs in  
PG-TFBGA-71 chipsize packages  
All speed grades faster than DDR2-400 comply with  
DDR2-400 timing specifications.  
Programmable CAS Latencies (3, 4, 5 and 6), Burst  
Length (8 & 4) and Burst Type  
Programmable self refresh rate via EMRS2 setting  
Programmable partial array refresh via EMRS2 settings  
Average Refresh Period 7.8 µs at a TCASE lower than 85°C,  
3.9µs between 85°C and 95°C.  
DCC enabling via EMRS2 setting  
All inputs and outputs SSTL_18 compatible  
Off-Chip Driver Impedance Adjustment (OCD) and On-Die  
Termination (ODT)  
Serial Presence Detect with E2PROM  
SO-DIMM Dimensions (nominal):  
30 mm high, 67.6 mm wide  
Based on Standard reference layouts Raw Card “D”  
RoHS Compliant Products1)  
Burst Refresh, Distributed Refresh and Self Refresh  
TABLE 1  
Performance Table  
Product Type Speed Code  
Speed Grade  
–25F  
–2.5  
–3  
–3S  
–3.7  
Unit  
PC2–6400 PC2–6400 PC2–5300 PC2–5300 PC2–4200  
5–5–5  
6–6–6  
4–4–4  
5–5–5  
4–4–4  
Max. Clock Frequency  
@CL6  
@CL5  
@CL4  
@CL3  
fCK6 400  
400  
333  
266  
200  
15  
MHz  
MHz  
MHz  
MHz  
ns  
fCK5 400  
fCK4 266  
fCK3 200  
tRCD 12.5  
333  
333  
200  
12  
333  
266  
200  
15  
266  
266  
200  
15  
Min. RAS-CAS-Delay  
Min. Row Precharge Time  
Min. Row Active Time  
Min. Row Cycle Time  
tRP  
tRAS 45  
tRC 57.5  
12.5  
15  
12  
15  
15  
ns  
45  
45  
45  
45  
ns  
60  
57  
60  
60  
ns  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.0, 2006-11  
3
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
1.2  
Description  
The Qimonda HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
module family are Small Outline modules “SO-DIMMs” with  
30 mm height based on DDR2 technology. DIMMs are  
available as non-ECC modules in 256M × 64 (2 GB)  
organization and density, intended for mounting into 200-pin  
connector sockets.  
The memory array is designed with stacked 1 Gbit Double-  
Data-Rate-Two (DDR2) Synchronous DRAMs. Decoupling  
capacitors are mounted on the PCB. The DIMMs feature  
serial presence detect based on a serial E2PROM device  
using the 2-pin I2C protocol. The first 128 bytes are  
programmed with configuration data and are write protected;  
the second 128 bytes are available to the customer.  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type1)  
Compliance Code2)  
Description  
SDRAM Technology  
PC2–6400  
HYS64T256022EDL–25F–B  
PC2–6400  
2GB 2R×8 PC2–6400S–555–12–D0  
2GB 2R×8 PC2–6400S–666–12–D0  
2GB 2R×8 PC2–5300S–444–12–D0  
2GB 2R×8 PC2–5300S–555–12–D0  
2GB 2R×8 PC2–4200S–444–12–D0  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
1 Gbit (×8)  
1 Gbit (×8)  
1 Gbit (×8)  
1 Gbit (×8)  
1 Gbit (×8)  
HYS64T256022EDL–2.5–B  
PC2–5300  
HYS64T256022EDL–3–B  
PC2–5300  
HYS64T256022EDL–3S–B  
PC2–4200  
HYS64T256022EDL–3.7–B  
1) All Product Type numbers end with a place code, designating the silicon die revision. Example: HYS64T256022EDL–3.7–B, indicating  
Rev. “B” dies are used for DDR2 SDRAM components. For all Qimonda DDR2 module and component nomenclature see Chapter 6 of  
this data sheet.  
2) The Compliance Code is printed on the module label and describes the speed grade, for example “PC2–4200S–444–12–D0”, where  
4200S means SO-DIMM modules with 4.26 GB/sec Module Bandwidth and “444–12” means Column Address Strobe (CAS) latency = 4,  
Row Column Delay (RCD) latency = 4 and Row Precharge (RP) latency = 4 using the latest JEDEC SPD Revision 1.2 and produced on  
the Raw Card “D”.  
TABLE 3  
Address Format  
DIMM Density Module  
Organization  
Memory ECC/  
# of  
SDRAMs  
# of row/bank/columns bits  
Raw Card  
Ranks  
Non-ECC  
2 GByte  
256M ×64  
2
Non-ECC  
16  
14/3/10  
D
TABLE 4  
Components on Modules  
Product Type1)  
DRAM Components1)  
DRAM Density  
DRAM Organisation  
2× 128M ×8  
Note  
2)  
HYS64T256022EDL  
1) Green Product  
HYB18T2G802BF  
2 ×1 Gbit  
2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.  
Rev. 1.0, 2006-11  
4
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
2
Pin Configuration  
The pin configuration of the Small Outline DDR2 SDRAM DIMM is listed by function in Table 5 (200 pins). The abbreviations  
used in columns Pin and Buffer Type are explained in Table 6 and Table 7 respectively. The pin numbering is depicted in  
Figure 1  
TABLE 5  
Pin Configuration of SO-DIMM  
Ball No.  
Name  
Pin  
Buffer  
Function  
Type Type  
Clock Signals  
30  
CK0  
CK1  
CK0  
CK1  
CKE0  
CKE1  
NC  
I
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Clock Signals 2:0, Complement Clock Signals 2:0  
164  
32  
I
I
166  
79  
I
I
Clock Enable Rank 1:0  
Note: 2 Ranks module  
80  
I
NC  
Not Connected  
Note: 1-rank module  
Control Signals  
110  
115  
S0  
S1  
NC  
I
SSTL  
SSTL  
Chip Select Rank 1:0  
I
NC  
Not Connected  
Note: 1-rank module  
Row Address Strobe  
Column Address Strobe  
Write Enable  
108  
RAS  
CAS  
WE  
I
I
I
SSTL  
SSTL  
SSTL  
113  
109  
Address Signals  
107  
106  
85  
BA0  
BA1  
BA2  
I
I
I
SSTL  
SSTL  
SSTL  
Bank Address Bus 2:0  
Bank Address Bus 2  
Greater than 512Mb DDR2 SDRAMS  
NC  
NC  
SSTL  
Less than 1Gb DDR2 SDRAMS  
Rev. 1.0, 2006-11  
5
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Ball No.  
Name  
Pin  
Buffer  
Function  
Type Type  
102  
101  
100  
99  
A0  
I
I
I
I
I
I
I
I
I
I
I
I
I
I
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Address Bus 12:0  
A1  
A2  
A3  
98  
A4  
97  
A5  
94  
A6  
92  
A7  
93  
A8  
91  
A9  
105  
A10  
AP  
A11  
A12  
90  
89  
Address Signal 12  
Note: Module based on 256 Mbit or larger dies  
Address Signal 13  
116  
A13  
NC  
I
SSTL  
Note: 1 Gbit based module  
Not Connected  
NC  
Note: Module based on 512 Mbit or smaller dies  
Data Signals  
5
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
DQ9  
DQ10  
DQ11  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
Note: Data Input/Output pins  
7
17  
19  
4
6
14  
16  
23  
25  
35  
37  
Rev. 1.0, 2006-11  
6
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Ball No.  
Name  
Pin  
Buffer  
Function  
Type Type  
20  
DQ12  
DQ13  
DQ14  
DQ15  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
DQ48  
DQ49  
DQ50  
DQ51  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
Data Input/Output pins  
22  
36  
38  
43  
45  
55  
57  
44  
46  
56  
58  
61  
63  
73  
75  
62  
64  
74  
76  
123  
125  
135  
137  
124  
126  
134  
136  
141  
143  
151  
153  
140  
142  
152  
154  
157  
159  
173  
175  
Rev. 1.0, 2006-11  
7
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Ball No.  
Name  
Pin  
Buffer  
Function  
Type Type  
158  
DQ52  
DQ53  
DQ54  
DQ55  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
160  
174  
176  
179  
181  
189  
191  
180  
182  
192  
194  
Data Strobe Signals  
13  
DQS0  
DQS0  
DQS1  
DQS1  
DQS2  
DQS2  
DQS3  
DQS3  
DQS4  
DQS4  
DQS5  
DQS5  
DQS6  
DQS6  
DQS7  
DQS7  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Strobe Bus 7:0  
11  
31  
29  
51  
49  
70  
68  
131  
129  
148  
146  
169  
167  
188  
186  
Data Mask Signals  
10  
DM0  
DM1  
DM2  
DM3  
DM4  
DM5  
DM6  
DM7  
I
I
I
I
I
I
I
I
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Mask Bus 7:0  
26  
52  
67  
130  
147  
170  
185  
Rev. 1.0, 2006-11  
8
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Ball No.  
Name  
Pin  
Buffer  
Function  
Type Type  
EEPROM  
197  
SCL  
SDA  
SA0  
SA1  
I
CMOS Serial Bus Clock  
OD Serial Bus Data  
195  
I/O  
198  
I
I
CMOS Serial Address Select Bus 2:0  
200  
CMOS  
Power Supplies  
1
VREF  
AI  
I/O Reference Voltage  
EEPROM Power Supply  
Power Supply  
199  
VDDSPD PWR  
81,82,87,88,95,96,103,104,  
111,112,117,118  
VDD  
PWR  
2,3,8,9,12,15,18,21,24,27,28,  
33,34,39,40,41,42,47,48,53,  
54,59,60,65,66,71,72,77,78,  
121,122,127,128,132,133,138,13  
9,144,145,149,150,155,156,,  
161,162,165,171,172,177,  
VSS  
GND  
Ground Plane  
178,183,184,187,190,193,196  
Other Pins  
114  
ODT0  
ODT1  
I
I
SSTL  
SSTL  
On-Die Termination Control 1:0  
On-Die Termination Control 1  
Note: 2 Rank modules  
Not Connected  
119  
NC  
NC  
NC  
NC  
Note: 1 Rank modules  
Not connected  
50,69,83,84,120,163,168  
Rev. 1.0, 2006-11  
9
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 6  
Abbreviations for Pin Type  
Abbreviation  
Description  
I
Standard input-only pin. Digital levels.  
Output. Digital levels.  
I/O is a bidirectional input/output signal.  
Input. Analog levels.  
Power  
O
I/O  
AI  
PWR  
GND  
NC  
Ground  
Not Connected  
TABLE 7  
Abbreviations for Buffer Type  
Abbreviation  
Description  
SSTL  
Serial Stub Terminated Logic (SSTL_18)  
Low Voltage CMOS  
LV-CMOS  
CMOS  
OD  
CMOS Levels  
Open Drain. The corresponding pin has 2 operational states, active low and tristate, and  
allows multiple devices to share as a wire-OR.  
Rev. 1.0, 2006-11  
10  
11172006-DXYK-2PPW  
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ꢀꢁꢂꢄꢀ ꢈꢀ9ꢀ  
66ꢀ  
ꢀꢁꢂꢅꢀ ꢈꢀ'4ꢊꢀ  
ꢀꢁꢄꢁꢀ ꢈꢀ'4ꢂꢄꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
                                                  
                                                   
                                                                                         
                                                                                         
                            
                             
                                                                                                                 
                                                                                                                  
                                                  
                                                   
                                                                                         
                                                                                         
                                                                                                   
                            
                             
                                                                                                                 
                                                                                                                  
'4  
'0  
&.ꢁꢀ  
                                                                                                                       
ꢂꢇ  
ꢂꢀ  
                                                                                                                        
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢄꢃꢀ ꢈꢀ9ꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                        
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢄꢆꢀ ꢈꢀ9ꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
'46ꢂꢀꢈꢀ 3LQꢀꢁ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢇꢄꢀ ꢈꢀ&.ꢁꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
'4  
                                          
                                           
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢇꢅꢀ ꢈꢀ'4ꢂ  
                                                                                                   
ꢂꢁꢀꢈꢀ 3LQꢀꢁ  
ꢃꢀ  
'4ꢂꢂꢀꢈꢀ 3LQꢀꢁ  
                    
                     
                            
                             
                                                                                                                 
                                                                                                                  
'4  
                                                                                                                       
ꢂꢉ  
                                                                                                                        
966ꢀꢈꢀ 3LQꢀꢁ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢃꢁꢀ ꢈꢀ9ꢀ  
966ꢀꢈꢀ 3LQꢀꢁ  
'4 ꢊꢀꢈꢀ 3LQꢀꢁ  
'46ꢄꢀꢈꢀ 3LQꢀꢁ  
966ꢀꢈꢀ 3LQꢀꢁ  
                            
ꢃꢂꢀ  
ꢃꢉꢀ  
ꢃꢋꢀ  
ꢉꢇꢀ  
ꢉꢊꢀ  
ꢅꢂꢀ  
ꢅꢉꢀ  
ꢅꢋꢀ  
ꢊꢇꢀ  
ꢊꢊꢀ  
ꢆꢂꢀ  
ꢆꢉꢀ  
ꢆꢋꢀ  
ꢋꢇꢀ  
ꢋꢊꢀ  
ꢁꢂꢀ  
ꢁꢉꢀ  
ꢁꢋꢀ  
ꢂꢇꢀ  
ꢂꢊꢀ  
ꢄꢂꢀ  
ꢄꢉꢀ  
ꢄꢋꢀ  
ꢇꢇꢀ  
ꢇꢊꢀ  
ꢃꢂꢀ  
ꢃꢉꢀ  
ꢃꢋꢀ  
ꢉꢇꢀ  
ꢉꢊꢀ  
ꢅꢂꢀ  
ꢅꢉꢀ  
ꢅꢋꢀ  
ꢊꢇꢀ  
ꢊꢊꢀ  
ꢆꢂꢀ  
ꢆꢉꢀ  
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ꢋꢇꢀ  
ꢋꢊꢀ  
                             
3LQꢀꢁꢃ  
3LQꢀꢁꢃ  
3LQꢀꢁꢉ  
3LQꢀꢁꢉ  
3LQꢀꢁꢉ  
3LQꢀꢁꢅ  
3LQꢀꢁꢅ  
3LQꢀꢁꢊ  
3LQꢀꢁꢊ  
3LQꢀꢁꢊ  
3LQꢀꢁꢆ  
3LQꢀꢁꢆ  
3LQꢀꢁꢋ  
3LQꢀꢁꢋ  
3LQꢀꢁꢋ  
3LQꢀꢂꢁ  
3LQꢀꢂꢁ  
3LQꢀꢂꢂ  
3LQꢀꢂꢂ  
3LQꢀꢂꢂ  
3LQꢀꢂꢄ  
3LQꢀꢂꢄ  
3LQꢀꢂꢇ  
3LQꢀꢂꢇ  
3LQꢀꢂꢇ  
3LQꢀꢂꢃ  
3LQꢀꢂꢃ  
3LQꢀꢂꢉ  
3LQꢀꢂꢉ  
3LQꢀꢂꢉ  
3LQꢀꢂꢅ  
3LQꢀꢂꢅ  
3LQꢀꢂꢊ  
3LQꢀꢂꢊ  
3LQꢀꢂꢊ  
3LQꢀꢂꢆ  
3LQꢀꢂꢆ  
3LQꢀꢂꢋ  
3LQꢀꢂꢋ  
3LQꢀꢂꢋ  
                                                                                                                 
                                                                                                                  
ꢄꢀꢈꢀ 9ꢀ  
66ꢀ  
'4ꢂ  
9663LQꢀꢁ  
                                           
ꢅꢀꢈ3LQꢀꢁ  
                                                  
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ꢉꢉꢀ  
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ꢅꢇꢀ  
ꢅꢊꢀ  
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ꢆꢊꢀ  
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ꢁꢊꢀ  
ꢂꢂꢀ  
ꢂꢉꢀ  
ꢂꢋꢀ  
ꢄꢇꢀ  
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ꢇꢋꢀ  
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3
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ꢀꢁꢃꢃꢀꢈꢀ '4ꢄ  
                                                                                                   
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%ꢀ  
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ꢀꢁꢃꢆꢀꢈꢀ 9ꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
ꢁꢀꢈꢀ 1&ꢌ  
                                                                                                                        
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9(17ꢀ  
'46  
                                          
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ꢀꢁꢉꢄꢀꢈꢀ '0  
                                                                                                  
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ꢃꢀꢈꢀ 9ꢀ  
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ꢀꢁꢉꢅꢀꢈꢀ '4ꢄ  
                                                                                                   
ꢄꢀ  
'4  
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ꢋꢀꢈꢀ 3LQꢀꢁ  
ꢃꢀꢈꢀ 3LQꢀꢁ  
                            
                             
                                                                                                                 
                                                                                                                  
ꢆꢀꢈꢀ '4  
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9663LQꢀꢁ  
'4ꢄꢉꢀꢈ3LQꢀꢁ  
'0ꢇ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢅꢁꢀꢈꢀ 9ꢀ  
                    
                     
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
                                                                                                                        
                                           
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢅꢃꢀꢈꢀ '4ꢄ  
ꢀꢁꢅꢆꢀꢈꢀ '46ꢇꢀ  
                                                                                                   
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966ꢀꢈꢀ 3LQꢀꢁ  
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ꢀꢈ3LQꢀꢁ  
                                                  
                                                   
                                                                                         
                                                                                         
                            
                             
                                                                                                                 
                                                                                                                  
ꢁꢀꢈꢀ '4  
ꢃꢀꢈꢀ '4  
ꢆꢀꢈꢀ 9ꢀ  
                                                                                                                       
6ꢇꢀ  
                                                                                                                         
9663LQꢀꢁ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢊꢄꢀꢈꢀ 9ꢀ  
'4  
                    
                     
ꢅꢀꢈꢀ 3LQꢀꢁ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
ꢇꢁ  
                                                                                                                        
'4ꢄ  
                                           
ꢊꢀꢈ3LQꢀꢁ  
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1&ꢀꢈ3LQꢀꢁ  
9''3LQꢀꢁ  
$ꢋꢀꢈ3LQꢀꢁ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢊꢅꢀꢈꢀ '4ꢇꢂꢀ  
ꢀꢁꢆꢁꢀꢈꢀ 1&ꢌ&.(ꢂꢀ  
ꢀꢁꢆꢃꢀꢈꢀ 1&ꢀ  
                                                                                                   
966ꢀꢈꢀ 3LQꢀꢁ  
9''ꢀꢈꢀ 3LQꢀꢁ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                  
                                                   
                                                                                         
                                                                                         
                            
                             
                                                                                                                 
                                                                                                                  
ꢄꢀꢈꢀ 9ꢀ  
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ꢅꢀꢈꢀ 1&ꢌ  
ꢁꢀꢈꢀ $ꢂꢂ  
ꢃꢀꢈꢀ $ꢅꢀ  
ꢆꢀꢈꢀ $ꢃꢀ  
ꢄꢀꢈꢀ $ꢁꢀ  
                                                                                                                        
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ꢀꢁꢆꢆꢀꢈꢀ 9ꢀ  
                     
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢋꢄꢀꢈꢀ $ꢊꢀ  
$ꢆꢀꢈꢀ 3LQꢀꢁ  
$ꢉꢀꢈꢀ 3LQꢀꢁ  
$ꢂꢀꢈꢀ 3LQꢀꢂ  
$3ꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
9''3LQꢀꢁ  
$ꢇꢀꢈ3LQꢀꢁ  
9''3LQꢀꢂ  
%$ꢁꢀꢈ3LQꢀꢂ  
9''3LQꢀꢂ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢁꢋꢅꢀꢈꢀ 9ꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢁꢁꢀꢈꢀ $ꢄꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢁꢃꢀꢈꢀ 9ꢀ  
$ꢂꢁ  
                   
                    
                            
                             
                                                                                                                 
                                                                                                                  
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ꢁꢀꢈꢀ 6ꢁꢀ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢁꢆꢀꢈꢀ 5$6ꢀ  
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ꢀꢂꢂꢄꢈꢀ 9ꢀ  
&$6ꢀꢈꢀ 3LQꢀꢂ  
9''ꢀꢈꢀ 3LQꢀꢂ  
966ꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
ꢃꢀꢈꢀ 2'  
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7ꢁꢀ  
                                                                                                                         
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ꢀꢂꢄꢁꢀꢈꢀ 1&ꢀ  
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ꢅꢀꢈꢀ '4  
ꢁꢀꢈꢀ '0  
ꢃꢀꢈꢀ '4  
ꢆꢀꢈꢀ 9ꢀ  
                                                                                                                       
ꢇꢊ  
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ꢇꢆ  
                                                                                                                        
9663LQꢀꢂ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢄꢆꢀꢈꢀ 9ꢀ  
'46ꢃꢀꢈꢀ 3LQꢀꢂ  
966ꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                        
'46  
                                          
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ꢀꢂꢇꢄꢀꢈꢀ 9ꢀ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
                                                                                                                        
'4ꢇ  
                                           
                                                  
                                                   
                                                                                         
                                                                                         
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ꢋꢀ  
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'4  
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ꢁꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
9663LQꢀꢂ  
'4ꢃꢂꢀꢈ3LQꢀꢂ  
'0ꢉ  
'4ꢃ  
9663LQꢀꢂ  
                                                  
                                                   
                                                                                         
                                                                                         
                                                                                                   
                    
                     
                            
                             
                                                                                                                 
                                                                                                                  
ꢄꢀꢈꢀ '4  
ꢅꢀꢈꢀ '4  
ꢁꢀꢈꢀ 9ꢀ  
                                                                                                                       
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ꢀꢂꢃꢃꢀꢈꢀ 9ꢀ  
966ꢀꢈꢀ 3LQꢀꢂ  
966ꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                                                                                       
6ꢉꢀ  
                                                                                                                         
                                           
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ꢀꢂꢃꢆꢀꢈꢀ '46ꢉꢀ  
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ꢅꢀ  
'4  
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ꢃꢀꢈꢀ '4  
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ꢄꢀꢈꢀ 9ꢀ  
                                                                                                                       
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ꢀꢂꢅꢁꢀꢈꢀ '4ꢉ  
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966ꢀꢈꢀ 3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
                                                  
                                                   
                                                                                         
                                                                                         
                            
                             
                                                                                                                 
                                                                                                                  
ꢅꢀꢈꢀ &.ꢂꢀ  
'4  
                                          
ꢅꢀꢈ3LQꢀꢂ  
                                                  
                                                   
                                                                                         
                                                                                         
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ꢀꢂꢅꢆꢀꢈꢀ 9ꢀ  
3LQꢀꢂ  
                            
                             
                                                                                                                 
                                                                                                                  
ꢁꢀ  
ꢈꢀ '0  
'46ꢅꢀꢈꢀ  
'4 ꢁꢀꢈꢀ 3LQꢀꢂ  
966ꢀꢈꢀ 3LQꢀꢂ  
'4 ꢊꢀꢈꢀ 3LQꢀꢂ  
'0ꢊꢀꢈꢀ 3LQꢀꢂ  
3LQꢀꢂ  
                                                                                                                        
ꢅꢀ  
9663LQꢀꢂ  
'4ꢉ  
'4ꢉ  
9663LQꢀꢂ  
9663LQꢀꢂ  
'4ꢉ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢊꢄꢀꢈꢀ 9ꢀ  
                    
                     
                            
                             
                                                                                                                 
                                                                                                                  
ꢃꢀꢈꢀ '4  
ꢆꢀꢈꢀ 9ꢀ  
                                                                                                                       
ꢉꢃ  
                                                                                                                        
                                           
ꢂꢀꢈ3LQꢀꢂ  
ꢅꢀꢈ3LQꢀꢂ  
                                                  
                                                   
                                                                                         
                                                                                         
ꢀꢂꢊꢅꢀꢈꢀ '4ꢉ  
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
FIGURE 1  
Pin Configuration SO-DIMM (200 Pin)  
9ꢀ  
66ꢀ  
9ꢀ  
66ꢀ ꢈꢀ 3LQꢀꢁ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
9ꢀ  
66ꢀ  
66ꢀ  
)ꢀ  
5ꢀ  
2ꢀ  
1ꢀ  
7ꢀ  
6ꢀ  
,ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
'ꢀ  
(ꢀ  
'ꢀ  
(ꢀ  
66ꢀ  
66ꢀ  
''ꢀ  
''ꢀ  
''ꢀ  
''ꢀ  
''ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
66ꢀ  
6&/ꢀꢈꢀ  
Rev. 1.0, 2006-11  
11  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
3
Electrical Characteristics  
3.1  
Absolute Maximum Ratings  
Caution is needed not to exceed absolute maximum ratings of the DRAM device listed in Table 8 at any time.  
TABLE 8  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Min.  
Unit  
Note  
Max.  
1)  
VDD  
Voltage on VDD pin relative to VSS  
Voltage on VDDQ pin relative to VSS  
Voltage on VDDL pin relative to VSS  
Voltage on any pin relative to VSS  
Storage Temperature  
–1.0  
–0.5  
–0.5  
–0.5  
–55  
+2.3  
+2.3  
+2.3  
+2.3  
+100  
V
1)2)  
1)2)  
1)  
VDDQ  
VDDL  
V
V
VIN, VOUT  
TSTG  
V
1)2)  
°C  
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.  
2) Storage Temperature is the case surface temperature on the center/top side of the DRAM.  
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods may affect reliability.  
TABLE 9  
DRAM Component Operating Temperature Range  
Symbol  
Parameter  
Rating  
Unit  
Note  
Min.  
Max.  
1)2)3)4)  
TOPER  
Operating Temperature  
0
95  
°C  
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.  
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case  
temperature must be maintained between 0 - 95 °C under all other specification parameters.  
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs  
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by  
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%  
Rev. 1.0, 2006-11  
12  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
3.2  
DC Operating Conditions  
TABLE 10  
Operating Conditions  
Parameter  
Symbol  
Values  
Min.  
Unit  
Note  
Max.  
Operating temperature (ambient)  
DRAM Case Temperature  
TOPR  
TCASE  
TSTG  
0
+65  
+95  
+100  
+105  
90  
°C  
°C  
°C  
kPa  
%
1)2)3)4)  
5)  
0
Storage Temperature  
– 50  
+69  
10  
Barometric Pressure (operating & storage)  
Operating Humidity (relative)  
PBar  
HOPR  
1) DRAM Component Case Temperature is the surface temperature in the center on the top side of any of the DRAMs.  
2) Within the DRAM Component Case Temperature Range all DRAM specifications will be supported  
3) Above 85 °C DRAM Case Temperature the Auto-Refresh command interval has to be reduced to tREFI = 3.9 µs  
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by  
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%.  
5) Up to 3000 m.  
TABLE 11  
Supply Voltage Levels and DC Operating Conditions  
Parameter  
Symbol  
Values  
Min.  
Unit  
Note  
Typ.  
Max.  
Device Supply Voltage  
Output Supply Voltage  
Input Reference Voltage  
SPD Supply Voltage  
VDD  
1.7  
1.8  
1.9  
V
1)  
2)  
VDDQ  
VREF  
1.7  
1.8  
1.9  
V
0.49 × VDDQ  
0.5 × VDDQ  
0.51 × VDDQ  
V
VDDSPD  
VIH(DC)  
VIL (DC  
IL  
1.7  
3.6  
V
DC Input Logic High  
VREF + 0.125  
V
V
5
DDQ + 0.3  
V
DC Input Logic Low  
)
– 0.30  
– 5  
REF – 0.125  
V
3)  
In / Output Leakage Current  
µA  
1) Under all conditions, VDDQ must be less than or equal to VDD  
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ  
3) Input voltage for any connector pin under test of 0 V VIN VDDQ + 0.3 V; all other pins at 0 V. Current is per pin  
.
Rev. 1.0, 2006-11  
13  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
3.3  
Timing Characteristics  
3.3.1  
Speed Grade Definitions  
All Speed grades faster than DDR2-400B comply with DDR2-400B timing specifications(tCK = 5ns with tRAS = 40ns).  
Speed Grade Definition: Table 12 for DDR2–800, Table 13 for DDR2–667D and Table 14 for DDR2–533C  
TABLE 12  
Speed Grade Definition Speed Bins for DDR2–800  
Speed Grade  
DDR2–800D  
DDR2–800E  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
–2.5F  
–2.5  
5–5–5  
6–6–6  
tCK  
Parameter  
Symbol  
Min.  
Max.  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Frequency  
@ CL = 3  
@ CL = 4  
@ CL = 5  
@ CL = 6  
tCK  
5
8
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
3.75  
2.5  
8
3.75  
3
8
tCK  
8
8
tCK  
2.5  
8
2.5  
45  
60  
15  
15  
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
45  
70000  
70000  
57.5  
12.5  
12.5  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0)  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
t
.
Rev. 1.0, 2006-11  
14  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 13  
Speed Grade Definition Speed Bins for DDR2–667  
Speed Grade  
DDR2–667C  
DDR2–667D  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
–3  
–3S  
4–4–4  
5–5–5  
tCK  
Parameter  
Symbol  
Min.  
Max.  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Frequency  
@ CL = 3  
@ CL = 4  
@ CL = 5  
tCK  
5
8
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
3
8
3.75  
3
8
tCK  
3
8
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
45  
57  
12  
12  
70000  
45  
60  
15  
15  
70000  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0) .  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
t
.
Rev. 1.0, 2006-11  
15  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 14  
Speed Grade Definition Speed Bins for DDR2–533C  
Speed Grade  
DDR2–533C  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
–3.7  
4–4–4  
tCK  
Parameter  
Symbol  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Frequency  
@ CL = 3  
@ CL = 4  
@ CL = 5  
tCK  
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
3.75  
3.75  
45  
8
tCK  
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
70000  
60  
15  
15  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0)  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
4) The output timing reference voltage level is VTT  
.
5) RAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
t
.
Rev. 1.0, 2006-11  
16  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
3.3.2  
Component AC Timing Parameters  
Timing Parameters: Table 15 for DDR2–800, Table 16 for DDR2–667D and Table 17 for DDR2–533C  
TABLE 15  
DRAM Component Timing Parameter by Speed Grade - DDR2–800  
Parameter  
Symbol  
DDR2–800  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Min.  
Max.  
9)  
DQ output access time from CK / CK  
CAS to CAS command delay  
Average clock high pulse width  
Average clock period  
tAC  
–400  
2
+400  
ps  
tCCD  
nCK  
tCK.AVG  
ps  
10)11)  
10)11)  
12)  
tCH.AVG  
tCK.AVG  
0.48  
2500  
3
0.52  
8000  
CKE minimum pulse width ( high and low pulse tCKE  
nCK  
width)  
10)11)  
13)14)  
Average clock low pulse width  
tCL.AVG  
0.48  
0.52  
tCK.AVG  
nCK  
ns  
Auto-Precharge write recovery + precharge time tDAL  
WR + tnRP  
Minimum time clocks remain ON after CKE  
asynchronously drops LOW  
tDELAY  
tIS + tCK .AVG  
tIH  
+
19)20)15)  
9)  
DQ and DM input hold time  
tDH.BASE  
tDIPW  
tDQSCK  
tDQSH  
125  
ps  
DQ and DM input pulse width for each input  
DQS output access time from CK / CK  
DQS input high pulse width  
0.35  
–350  
0.35  
0.35  
tCK.AVG  
ps  
+350  
tCK.AVG  
tCK.AVG  
ps  
DQS input low pulse width  
tDQSL  
16)  
17)  
DQS-DQ skew for DQS & associated DQ signals tDQSQ  
200  
+ 0.25  
DQS latching rising transition to associated clock tDQSS  
– 0.25  
tCK.AVG  
edges  
18)19)20)  
17)  
DQ and DM input setup time  
tDS.BASE  
tDSH  
tDSS  
50  
__  
ps  
DQS falling edge hold time from CK  
DQS falling edge to CK setup time  
0.2  
0.2  
35  
tCK.AVG  
tCK.AVG  
ns  
17)  
31)  
Four Activate Window for 1KB page size products tFAW  
Four Activate Window for 2KB page size products tFAW  
31)  
45  
ns  
21)  
CK half pulse width  
tHP  
Min(tCH.ABS  
,
ps  
tCL.ABS  
)
9)22)  
Data-out high-impedance time from CK / CK  
Address and control input hold time  
tHZ  
tAC.MAX  
ps  
23)25)  
tIH.BASE  
250  
0.6  
ps  
Control & address input pulse width for each input tIPW  
tCK.AVG  
ps  
24)25)  
9)22)  
9)22)  
31)  
Address and control input setup time  
DQ low impedance time from CK/CK  
DQS/DQS low-impedance time from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
OCD drive mode output delay  
tIS.BASE  
175  
tLZ.DQ  
tLZ.DQS  
tMOD  
tMRD  
tOIT  
2 × tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
ps  
tAC.MIN  
ps  
0
2
0
ns  
nCK  
ns  
31)  
26)  
12  
DQ/DQS output hold time from DQS  
tQH  
t
HP tQHS  
ps  
Rev. 1.0, 2006-11  
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11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–800  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Max.  
27)  
DQ hold skew factor  
Read preamble  
tQHS  
300  
1.1  
0.6  
ps  
28)29)  
28)30)  
31)  
tRPRE  
tRPST  
tRRD  
0.9  
0.4  
7.5  
tCK.AVG  
tCK.AVG  
ns  
Read postamble  
Active to active command period for 1KB page  
size products  
31)  
31)  
Active to active command period for 2KB page  
size products  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
0.35  
0.4  
15  
0.6  
ns  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
31)  
Write recovery time  
31)32)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
8 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
31)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
RL – 1  
1) For details and notes see the relevant Qimonda component data sheet  
2)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock  
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and  
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command  
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272  
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and  
tDQSCK.MAX(DERATED) = tDQSCK.MAX tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)  
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)  
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to  
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.  
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and  
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).  
12) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the  
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during  
the time period of tIS + 2 x tCK + tIH.  
Rev. 1.0, 2006-11  
18  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
13) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result  
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For  
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.  
14) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.  
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to  
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing  
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and  
VIH.DC.MIN. See Figure 3.  
16) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output  
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.  
17) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.  
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal  
crossing. That is, these parameters should be met whether clock jitter is present or not.  
18) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level  
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe  
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See  
Figure 3.  
19) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.  
20) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal  
((L/U/R)DQS / DQS) crossing.  
21) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.  
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the  
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the  
minimum of the actual instantaneous clock low time.  
22) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level  
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .  
23) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied  
to the device under test. See Figure 4.  
24) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied  
to the device under test. See Figure 4.  
25) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to  
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC  
,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should  
be met whether clock jitter is present or not.  
26) tQH = tHP tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the  
max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}  
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system  
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.  
27) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is  
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next  
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation  
of the output drivers.  
28) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving  
(tRPST), or begins driving (tRPRE). Figure 2 shows a method to calculate these points when the device is no longer driving (tRPST), or begins  
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the  
calculation is consistent.  
29) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps  
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX  
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).  
30) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps  
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX  
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).  
31) For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock  
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in  
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support  
tnRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at  
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.  
Rev. 1.0, 2006-11  
19  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
32) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.  
TABLE 16  
DRAM Component Timing Parameter by Speed Grade - DDR2–667  
Parameter  
Symbol  
DDR2–667  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Min.  
Max.  
9)  
DQ output access time from CK / CK  
CAS to CAS command delay  
Average clock high pulse width  
Average clock period  
tAC  
–450  
2
+450  
ps  
tCCD  
nCK  
tCK.AVG  
ps  
10)11)  
12)  
tCH.AVG  
tCK.AVG  
0.48  
3000  
3
0.52  
8000  
CKE minimum pulse width ( high and low pulse tCKE  
nCK  
width)  
10)11)  
13)14)  
Average clock low pulse width  
tCL.AVG  
0.48  
0.52  
tCK.AVG  
nCK  
ns  
Auto-Precharge write recovery + precharge time tDAL  
WR + tnRP  
Minimum time clocks remain ON after CKE  
asynchronously drops LOW  
tDELAY  
tIS + tCK .AVG  
tIH  
+
19)20)15)  
9)  
DQ and DM input hold time  
tDH.BASE  
tDIPW  
tDQSCK  
tDQSH  
175  
ps  
DQ and DM input pulse width for each input  
DQS output access time from CK / CK  
DQS input high pulse width  
0.35  
–400  
0.35  
0.35  
tCK.AVG  
ps  
+400  
tCK.AVG  
tCK.AVG  
ps  
DQS input low pulse width  
tDQSL  
16)  
17)  
DQS-DQ skew for DQS & associated DQ signals tDQSQ  
240  
+ 0.25  
DQS latching rising transition to associated clock tDQSS  
– 0.25  
tCK.AVG  
edges  
18)19)20)  
17)  
DQ and DM input setup time  
tDS.BASE  
tDSH  
tDSS  
100  
0.2  
0.2  
37.5  
50  
––  
ps  
DQS falling edge hold time from CK  
DQS falling edge to CK setup time  
tCK.AVG  
tCK.AVG  
ns  
17)  
31)  
Four Activate Window for 1KB page size products tFAW  
Four Activate Window for 2KB page size products tFAW  
31)  
ns  
21)  
CK half pulse width  
tHP  
Min(tCH.ABS  
,
ps  
tCL.ABS  
)
9)22)  
Data-out high-impedance time from CK / CK  
Address and control input hold time  
tHZ  
tAC.MAX  
ps  
25)23)  
tIH.BASE  
275  
0.6  
ps  
Control & address input pulse width for each input tIPW  
tCK.AVG  
ps  
24)25)  
9)22)  
9)22)  
31)  
Address and control input setup time  
DQ low impedance time from CK/CK  
DQS/DQS low-impedance time from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
OCD drive mode output delay  
tIS.BASE  
200  
tLZ.DQ  
tLZ.DQS  
tMOD  
tMRD  
tOIT  
2 × tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
ps  
tAC.MIN  
ps  
0
2
0
ns  
nCK  
ns  
31)  
26)  
27)  
12  
DQ/DQS output hold time from DQS  
DQ hold skew factor  
tQH  
t
HP tQHS  
ps  
tQHS  
340  
ps  
Rev. 1.0, 2006-11  
20  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–667  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)8)  
Max.  
28)29)  
28)30)  
31)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
tRRD  
0.9  
0.4  
7.5  
1.1  
0.6  
tCK.AVG  
tCK.AVG  
ns  
Active to active command period for 1KB page  
size products  
31)  
31)  
Active to active command period for 2KB page  
size products  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
0.35  
0.4  
15  
0.6  
ns  
tWPRE  
tWPST  
tWR  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
31)  
Write recovery time  
31)32)  
Internal write to read command delay  
Exit power down to read command  
tWTR  
tXARD  
7.5  
2
ns  
nCK  
nCK  
Exit active power-down mode to read command tXARDS  
7 – AL  
(slow exit, lower power)  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
tXP  
2
nCK  
31)  
Exit self-refresh to a non-read command  
Exit self-refresh to read command  
tXSNR  
tXSRD  
t
RFC +10  
ns  
200  
nCK  
nCK  
Write command to DQS associated clock edges WL  
RL–1  
1) For details and notes see the relevant Qimonda component data sheet  
2)  
V
DDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V. See notes 5)6)7)8)  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock  
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and  
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command  
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272  
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and  
tDQSCK.MAX(DERATED) = tDQSCK.MAX tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)  
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)  
10) Input clock jitter spec parameter. These parameters are referred to as 'input clock jitter spec parameters' and these parameters apply to  
DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.  
11) These parameters are specified per their average values, however it is understood that the relationship between the average timing and  
the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations ).  
12) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the  
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during  
the time period of tIS + 2 x tCK + tIH.  
13) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result  
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For  
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.  
Rev. 1.0, 2006-11  
21  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
14) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.  
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to  
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing  
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and  
VIH.DC.MIN. See Figure 3.  
16) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output  
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.  
17) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.  
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal  
crossing. That is, these parameters should be met whether clock jitter is present or not.  
18) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level  
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe  
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See  
Figure 3.  
19) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.  
20) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal  
((L/U/R)DQS / DQS) crossing.  
21) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.  
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the  
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the  
minimum of the actual instantaneous clock low time.  
22) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level  
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .  
23) Input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied  
to the device under test. See Figure 4.  
24) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied  
to the device under test. See Figure 4.  
25) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to  
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC  
,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should  
be met whether clock jitter is present or not.  
26) tQH = tHP tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the  
max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}  
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system  
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.  
27) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is  
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next  
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation  
of the output drivers.  
28) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving  
(tRPST), or begins driving (tRPRE). Figure 2 shows a method to calculate these points when the device is no longer driving (tRPST), or begins  
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the  
calculation is consistent.  
29) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps  
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX  
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).  
30) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps  
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX  
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).  
31) For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock  
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in  
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support  
tnRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at  
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.  
32) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.  
Rev. 1.0, 2006-11  
22  
11172006-DXYK-2PPW  
                                                                
                                                                       
                                                                                                         
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
FIGURE 2  
Method for calculating transitions and endpoint  
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ꢀꢈꢀꢄ[ꢀP9ꢀ  
W/=ꢀ  
W53  
W+=ꢀ  
W536 QG  
7ꢂꢀ 7ꢄꢀ  
HJLQꢀSRLQ  
FIGURE 3  
Differential input waveform timing - tDS and tDS  
'46ꢀ  
W'+ꢀ  
W'6ꢀ  
9' '4  
FIGURE 4  
Differential input waveform timing - tlS and tlH  
&.ꢀ  
&.ꢀ  
9' '4  
9,+ꢐDF ꢀPLQꢀ  
9,+ꢐGF ꢀPLQꢀ  
95 ()ꢐGFꢑꢀ  
96 6ꢀ  
Rev. 1.0, 2006-11  
11172006-DXYK-2PPW  
23  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 17  
DRAM Component Timing Parameter by Speed Grade - DDR2–533  
Parameter  
Symbol  
DDR2–533  
Unit  
Note  
1)2)3)4)5)6)7)  
Min.  
Max.  
DQ output access time from CK / CK  
CAS A to CAS B command period  
CK, CK high-level width  
tAC  
–500  
2
+500  
ps  
tCCD  
tCH  
tCKE  
tCL  
tCK  
tCK  
tCK  
tCK  
tCK  
0.45  
3
0.55  
CKE minimum high and low pulse width  
CK, CK low-level width  
0.45  
WR + tRP  
0.55  
8)18)  
9)  
Auto-Precharge write recovery + precharge  
time  
tDAL  
Minimum time clocks remain ON after CKE  
asynchronously drops LOW  
tDELAY  
tIS + tCK + tIH  
225  
ns  
ps  
ps  
10)  
11)  
DQ and DM input hold time (differential data  
strobe)  
t
t
DH(base)  
DQ and DM input hold time (single ended data  
strobe)  
DH1(base)  
–25  
DQ and DM input pulse width (each input)  
DQS output access time from CK / CK  
tDIPW  
0.35  
–450  
0.35  
tCK  
ps  
tCK  
ps  
tDQSCK  
+450  
DQS input low (high) pulse width (write cycle) tDQSL,H  
11)  
DQS-DQ skew (for DQS & associated DQ  
signals)  
tDQSQ  
300  
Write command to 1st DQS latching transition tDQSS  
– 0.25  
100  
+ 0.25  
tCK  
11)  
11)  
DQ and DM input setup time (differential data  
strobe)  
t
DS(base)  
ps  
DQ and DM input setup time (single ended data tDS1(base)  
strobe)  
–25  
0.2  
ps  
DQS falling edge hold time from CK (write  
cycle)  
tDSH  
tCK  
DQS falling edge to CK setup time (write cycle) tDSS  
0.2  
tCK  
ns  
ns  
Four Activate Window period  
Four Activate Window period  
Clock half period  
tFAW  
tFAW  
tHP  
37.5  
13)  
12)  
13)  
11)  
50  
MIN. (tCL, tCH  
)
Data-out high-impedance time from CK / CK  
Address and control input hold time  
tHZ  
tAC.MAX  
ps  
ps  
tCK  
tIH(base)  
tIPW  
375  
0.6  
Address and control input pulse width  
(each input)  
11)  
14)  
14)  
Address and control input setup time  
DQ low-impedance time from CK / CK  
DQS low-impedance from CK / CK  
Mode register set command cycle time  
OCD drive mode output delay  
tIS(base)  
tLZ(DQ)  
tLZ(DQS)  
tMRD  
250  
ps  
ps  
ps  
tCK  
ns  
2 × tAC.MIN  
tAC.MAX  
tAC.MAX  
tAC.MIN  
2
0
tOIT  
12  
Data output hold time from DQS  
tQH  
t
HP tQHS  
Rev. 1.0, 2006-11  
24  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–533  
Min.  
Unit  
Note  
1)2)3)4)5)6)7)  
Max.  
Data hold skew factor  
tQHS  
tREFI  
tREFI  
tRFC  
400  
7.8  
3.9  
ps  
µs  
µs  
ns  
14)15)  
16)18)  
17)  
Average periodic refresh Interval  
Average periodic refresh Interval  
Auto-Refresh to Active/Auto-Refresh  
command period  
127.5  
Precharge-All (4 banks) command period  
Precharge-All (8 banks) command period  
Read preamble  
tRP  
t
RP + 1tCK  
ns  
ns  
tCK  
tCK  
ns  
tRP  
15 + 1tCK  
0.9  
14)  
tRPRE  
tRPST  
tRRD  
1.1  
0.60  
14)  
Read postamble  
0.40  
14)18)  
Active bank A to Active bank B command  
period  
7.5  
16)22)  
Active bank A to Active bank B command  
period  
tRRD  
10  
ns  
Internal Read to Precharge command delay  
Write preamble  
tRTP  
7.5  
ns  
tCK  
tCK  
ns  
tWPRE  
tWPST  
tWR  
0.25  
0.40  
15  
19)  
Write postamble  
0.60  
Write recovery time for write without Auto-  
Precharge  
20)  
21)  
Internal Write to Read command delay  
tWTR  
7.5  
2
ns  
Exit power down to any valid command  
(other than NOP or Deselect)  
tXARD  
tCK  
21)  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
tXP  
6 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command  
Exit Self-Refresh to Read command  
tXSNR  
tXSRD  
WR  
t
RFC +10  
200  
WR/tCK  
ns  
tCK  
tCK  
22)  
Write recovery time for write with Auto-  
Precharge  
t
1) For details and notes see the relevant Qimonda component data sheet  
2)  
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ±0.1 V. See notes 5)6)7)8)  
V
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS/ RDQS,  
input reference level is the crosspoint when in differential strobe mode.  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT  
.
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to  
the WR parameter stored in the MR.  
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.  
10) For timing definition, refer to the Component data sheet.  
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate  
mis-match between DQS / DQS and associated DQ in any given cycle.  
Rev. 1.0, 2006-11  
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can  
be greater than the minimum specification limits for tCL and tCH).  
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving  
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These  
parameters are verified by design and characterization, but not subject to production test.  
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C  
and 95 °C.  
15) 0 °CTCASE 85 °C  
16) 85 °C < TCASE 95 °C  
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.  
18) The tRRD timing parameter depends on the page size of the DRAM organization. See Table 2 “Ordering Information for RoHS  
Compliant Products” on Page 4.  
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
20) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.  
21) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active power-  
down mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow  
power-down exit timing tXARDS has to be satisfied.  
22) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded  
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK  
refers to the application clock period. WR refers to the WR parameter stored in the MRS.  
3.3.3  
ODT AC Electrical Characteristics  
ODT AC Character. & Operating Conditions: Table 18 for DDR2–800 & DDR2–667 and Table 19 for DDR2–533  
TABLE 18  
ODT AC Character. and Operating Conditions for DDR2-800 and DDR2-667  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
1)  
tAOND  
tAON  
ODT turn-on delay  
2
2
nCK  
ns  
1)2)  
1)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 0.7 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
t
AC.MIN + 2 ns  
2 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
2.5  
2.5  
nCK  
ns  
1)3)  
1)  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
t
AC.MIN + 2 ns  
2.5 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
3
8
nCK  
nCK  
1)  
1) New units, 'tCK.AVG' and 'nCK', are introduced in DDR2-667 and DDR2-800. Unit 'tCK.AVG' represents the actual tCK.AVG of the input clock  
under operation. Unit 'nCK' represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and  
DDR2-533, 'tCK' is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may  
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 × tCK.AVG+ tEPR.2PER(MIN)  
.
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is  
2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.  
3) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800,if tCK.AVG  
=
3 ns is assumed, tAOFD= 1.5 ns (0.5 × 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT  
LOW and by counting the actual input clock edge.  
Rev. 1.0, 2006-11  
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 19  
ODT AC Character. and Operating Conditions for DDR2-533  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
tAOND  
tAON  
ODT turn-on delay  
2
2
tCK  
ns  
ns  
tCK  
ns  
ns  
tCK  
tCK  
1)  
2)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 1 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
t
AC.MIN + 2 ns  
2 tCK + tAC.MAX + 1 ns  
2.5  
2.5  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
t
AC.MIN + 2 ns  
2.5 tCK + tAC.MAX + 1 ns  
3
8
1) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is  
10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is  
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
Rev. 1.0, 2006-11  
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Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
3.4  
IDD Specifications and Conditions  
List of Idd Specification Tables:  
Table 20 “IDD Measurement Conditions” on Page 28  
Table 21 “Definitions for IDD” on Page 29  
Table 22 “IDD Specification for HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B” on Page 30  
TABLE 20  
DD Measurement Conditions  
I
Parameter  
Symbol Note  
1)2)3)4)5)  
Operating Current 0  
IDD0  
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between  
valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.  
6)  
Operating Current 1  
IDD1  
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN  
,
t
RCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and  
control inputs are SWITCHING, Databus inputs are SWITCHING.  
Precharge Standby Current  
IDD2N  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING,  
Databus inputs are SWITCHING.  
Precharge Power-Down Current  
Other control and address inputs are STABLE, Data bus inputs are FLOATING.  
IDD2P  
IDD2Q  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,  
Data bus inputs are FLOATING.  
Active Standby Current  
IDD3N  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN  
;
t
RAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.  
Active Power-Down Current  
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs  
are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);  
IDD3P(0)  
IDD3P(1)  
IDD4R  
Active Power-Down Current  
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs  
are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);  
6)  
Operating Current - Burst Read  
All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX  
;
t
RP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data  
bus inputs are SWITCHING; IOUT = 0mA.  
Operating Current - Burst Write  
IDD4W  
All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN  
;
t
RAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
SWITCHING; Data Bus inputs are SWITCHING;  
Burst Refresh Current  
IDD5B  
t
CK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.  
Rev. 1.0, 2006-11  
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HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Parameter  
Symbol Note  
1)2)3)4)5)  
Distributed Refresh Current  
IDD5D  
t
CK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid  
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.  
Self-Refresh Current  
IDD6  
CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data  
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.  
6)  
All Bank Interleave Read Current  
IDD7  
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control  
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.  
1)  
2)  
V
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.  
3) Definitions for IDD see Table 21  
4) For two rank modules: for all active current measurements the other rank is in Precharge Power-Down Mode IDD2P  
5) For details and notes see the relevant Qimonda component data sheet  
6)  
IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output  
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.  
TABLE 21  
Definitions for IDD  
Parameter  
LOW  
Description  
VIN VIL(ac).MAX, HIGH is defined as VIN VIH(ac).MIN  
Inputs are stable at a HIGH or LOW level  
Inputs are VREF = VDDQ /2  
STABLE  
FLOATING  
SWITCHING  
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control  
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ  
signals not including mask or strobes  
Rev. 1.0, 2006-11  
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HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
TABLE 22  
I
DD Specification for HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Product Type  
Units  
Note1)  
Organization  
2 GB  
×64  
2 GB  
×64  
2 GB  
×64  
2 GB  
×64  
2 GB  
×64  
2 Ranks  
–25F  
2 Ranks  
–2.5  
2 Ranks  
–3  
2 Ranks  
–3S  
2 Ranks  
–3.7  
2)  
IDD0  
1096  
1176  
1120  
192  
1096  
1176  
1120  
192  
976  
980  
900  
940  
880  
190  
800  
960  
610  
240  
1300  
1300  
1700  
210  
128  
1900  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
2)  
IDD1  
1056  
1040  
192  
1060  
1040  
190  
3)  
IDD2N  
3)  
IDD2P  
3)  
IDD2Q  
IDD3N  
1040  
1440  
768  
1040  
1440  
768  
960  
960  
3)  
1120  
720  
1120  
720  
3)4)  
3)5)  
2)  
IDD3P_0 (fast)  
IDD3P_1 (slow)  
IDD4R  
240  
240  
240  
240  
1696  
1696  
1896  
208  
1696  
1696  
1896  
208  
1456  
1456  
1776  
208  
1460  
1460  
1780  
210  
2)  
IDD4W  
IDD5B  
2)  
3)6)  
3)6)  
2)  
IDD5D  
IDD6  
128  
128  
128  
128  
IDD7  
2256  
2256  
1936  
1940  
1) Calculated values from component data. ODT disabled. IDD1,  
I
DD4R, and IDD7, are defined with the outputs disabled.  
2) The other rank is in IDD2P Precharge Power-Down Current mode  
3) Both ranks are in the same IDDcurrent mode  
4) Fast: MRS(12)=0  
5) Slow: MRS(12)=1  
6)  
IDD5D and IDD6 values are for 0°C TCase 85°C  
Rev. 1.0, 2006-11  
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HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
4
SPD Codes  
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands  
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.  
TABLE 23  
SPD codes for HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Product Type  
Organization  
2 GByte 2 GByte 2 GByte 2 GByte 2 GByte  
×64  
×64  
×64  
×64  
×64  
2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks  
(×8)  
(×8)  
(×8)  
(×8)  
(×8)  
Label Code  
PC2–  
6400S–  
555  
PC2–  
6400S–  
666  
PC2–  
5300S–  
444  
PC2–  
5300S–  
555  
PC2–  
4200S–  
444  
JEDEC SPD Revision  
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2  
Byte#  
Description  
HEX  
HEX  
HEX  
HEX  
HEX  
0
Programmed SPD Bytes in EEPROM  
Total number of Bytes in EEPROM  
Memory Type (DDR2)  
80  
08  
08  
0E  
0A  
71  
40  
00  
05  
25  
40  
00  
82  
08  
00  
80  
08  
08  
0E  
0A  
71  
40  
00  
05  
25  
40  
00  
82  
08  
00  
80  
08  
08  
0E  
0A  
71  
40  
00  
05  
30  
45  
00  
82  
08  
00  
80  
08  
08  
0E  
0A  
71  
40  
00  
05  
30  
45  
00  
82  
08  
00  
80  
08  
08  
0E  
0A  
71  
40  
00  
05  
3D  
50  
00  
82  
08  
00  
1
2
3
Number of Row Addresses  
Number of Column Addresses  
DIMM Rank and Stacking Information  
Data Width  
4
5
6
7
Not used  
8
Interface Voltage Level  
9
t
t
CK @ CLMAX (Byte 18) [ns]  
10  
11  
12  
13  
14  
AC SDRAM @ CLMAX (Byte 18) [ns]  
Error Correction Support (non-ECC, ECC)  
Refresh Rate and Type  
Primary SDRAM Width  
Error Checking SDRAM Width  
Rev. 1.0, 2006-11  
31  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Product Type  
Organization  
2 GByte 2 GByte 2 GByte 2 GByte 2 GByte  
×64  
×64  
×64  
×64  
×64  
2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks  
(×8)  
(×8)  
(×8)  
(×8)  
(×8)  
Label Code  
PC2–  
6400S–  
555  
PC2–  
6400S–  
666  
PC2–  
5300S–  
444  
PC2–  
5300S–  
555  
PC2–  
4200S–  
444  
JEDEC SPD Revision  
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2  
Byte#  
Description  
HEX  
HEX  
HEX  
HEX  
HEX  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
Not used  
00  
0C  
08  
70  
01  
04  
00  
07  
25  
40  
3D  
50  
32  
1E  
32  
2D  
01  
17  
25  
05  
12  
3C  
1E  
00  
0C  
08  
70  
01  
04  
00  
07  
30  
45  
3D  
50  
3C  
1E  
3C  
2D  
01  
17  
25  
05  
12  
3C  
1E  
00  
0C  
08  
38  
01  
04  
00  
07  
30  
45  
50  
60  
30  
1E  
30  
2D  
01  
20  
27  
10  
17  
3C  
1E  
00  
0C  
08  
38  
01  
04  
00  
07  
3D  
50  
50  
60  
3C  
1E  
3C  
2D  
01  
20  
27  
10  
17  
3C  
1E  
00  
0C  
08  
38  
01  
04  
00  
07  
3D  
50  
50  
60  
3C  
1E  
3C  
2D  
01  
25  
37  
10  
22  
3C  
1E  
Burst Length Supported  
Number of Banks on SDRAM Device  
Supported CAS Latencies  
DIMM Mechanical Characteristics  
DIMM Type Information  
DIMM Attributes  
Component Attributes  
t
t
t
t
t
t
t
t
CK @ CLMAX -1 (Byte 18) [ns]  
AC SDRAM @ CLMAX -1 [ns]  
CK @ CLMAX -2 (Byte 18) [ns]  
AC SDRAM @ CLMAX -2 [ns]  
RP.MIN [ns]  
RRD.MIN [ns]  
RCD.MIN [ns]  
RAS.MIN [ns]  
Module Density per Rank  
t
t
t
t
t
t
AS.MIN and tCS.MIN [ns]  
AH.MIN and tCH.MIN [ns]  
DS.MIN [ns]  
DH.MIN [ns]  
WR.MIN [ns]  
WTR.MIN [ns]  
Rev. 1.0, 2006-11  
32  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Product Type  
Organization  
2 GByte 2 GByte 2 GByte 2 GByte 2 GByte  
×64  
×64  
×64  
×64  
×64  
2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks  
(×8)  
(×8)  
(×8)  
(×8)  
(×8)  
Label Code  
PC2–  
6400S–  
555  
PC2–  
6400S–  
666  
PC2–  
5300S–  
444  
PC2–  
5300S–  
555  
PC2–  
4200S–  
444  
JEDEC SPD Revision  
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2  
Byte#  
Description  
RTP.MIN [ns]  
Analysis Characteristics  
HEX  
HEX  
HEX  
HEX  
HEX  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
t
1E  
00  
06  
39  
7F  
80  
14  
1E  
00  
57  
60  
5F  
40  
2B  
2E  
49  
21  
4E  
25  
39  
00  
00  
00  
1E  
00  
06  
3C  
7F  
80  
14  
1E  
00  
50  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
1E  
00  
06  
39  
7F  
80  
18  
22  
00  
50  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
1E  
00  
06  
3C  
7F  
80  
18  
22  
00  
50  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
1E  
00  
06  
3C  
7F  
80  
1E  
28  
00  
50  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
00  
t
t
t
t
t
t
RC and tRFC Extension  
RC.MIN [ns]  
RFC.MIN [ns]  
CK.MAX [ns]  
DQSQ.MAX [ns]  
QHS.MAX [ns]  
PLL Relock Time  
CASE.MAX Delta / T4R4W Delta  
T
Psi(T-A) DRAM  
T0 (DT0)  
T2N (DT2N, UDIMM) or T2Q (DT2Q, RDIMM)  
T2P (DT2P)  
T3N (DT3N)  
T3P.fast (DT3P fast)  
T3P.slow (DT3P slow)  
T4R (DT4R) / T4R4W Sign (DT4R4W)  
T5B (DT5B)  
T7 (DT7)  
Psi(ca) PLL  
Psi(ca) REG  
TPLL (DTPLL)  
Rev. 1.0, 2006-11  
33  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Product Type  
Organization  
2 GByte 2 GByte 2 GByte 2 GByte 2 GByte  
×64  
×64  
×64  
×64  
×64  
2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks  
(×8)  
(×8)  
(×8)  
(×8)  
(×8)  
Label Code  
PC2–  
6400S–  
555  
PC2–  
6400S–  
666  
PC2–  
5300S–  
444  
PC2–  
5300S–  
555  
PC2–  
4200S–  
444  
JEDEC SPD Revision  
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2  
Byte#  
Description  
HEX  
HEX  
HEX  
HEX  
HEX  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
TREG (DTREG) / Toggle Rate  
SPD Revision  
00  
12  
91  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
00  
12  
43  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
00  
12  
46  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
00  
12  
79  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
00  
12  
BD  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
Checksum of Bytes 0-62  
Manufacturer’s JEDEC ID Code (1)  
Manufacturer’s JEDEC ID Code (2)  
Manufacturer’s JEDEC ID Code (3)  
Manufacturer’s JEDEC ID Code (4)  
Manufacturer’s JEDEC ID Code (5)  
Manufacturer’s JEDEC ID Code (6)  
Manufacturer’s JEDEC ID Code (7)  
Manufacturer’s JEDEC ID Code (8)  
Module Manufacturer Location  
Product Type, Char 1  
36  
34  
54  
32  
35  
36  
30  
32  
32  
45  
44  
36  
34  
54  
32  
35  
36  
30  
32  
32  
45  
44  
36  
34  
54  
32  
35  
36  
30  
32  
32  
45  
44  
36  
34  
54  
32  
35  
36  
30  
32  
32  
45  
44  
36  
34  
54  
32  
35  
36  
30  
32  
32  
45  
44  
Product Type, Char 2  
Product Type, Char 3  
Product Type, Char 4  
Product Type, Char 5  
Product Type, Char 6  
Product Type, Char 7  
Product Type, Char 8  
Product Type, Char 9  
Product Type, Char 10  
Product Type, Char 11  
Rev. 1.0, 2006-11  
34  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Product Type  
Organization  
2 GByte 2 GByte 2 GByte 2 GByte 2 GByte  
×64  
×64  
×64  
×64  
×64  
2 Ranks 2 Ranks 2 Ranks 2 Ranks 2 Ranks  
(×8)  
(×8)  
(×8)  
(×8)  
(×8)  
Label Code  
PC2–  
6400S–  
555  
PC2–  
6400S–  
666  
PC2–  
5300S–  
444  
PC2–  
5300S–  
555  
PC2–  
4200S–  
444  
JEDEC SPD Revision  
Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2 Rev. 1.2  
Byte#  
Description  
HEX  
HEX  
HEX  
HEX  
HEX  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Product Type, Char 12  
4C  
32  
35  
46  
42  
20  
20  
0x  
xx  
xx  
xx  
xx  
00  
FF  
4C  
32  
2E  
35  
42  
20  
20  
3x  
xx  
4C  
33  
42  
20  
20  
20  
20  
3x  
xx  
xx  
xx  
xx  
00  
FF  
4C  
33  
53  
42  
20  
20  
20  
3x  
xx  
xx  
xx  
xx  
00  
FF  
4C  
33  
2E  
37  
42  
20  
20  
3x  
xx  
Product Type, Char 13  
Product Type, Char 14  
Product Type, Char 15  
Product Type, Char 16  
Product Type, Char 17  
Product Type, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
xx  
xx  
xx  
xx  
95 - 98 Module Serial Number  
99 - 127 Not used  
xx  
xx  
00  
FF  
00  
FF  
128 -  
255  
Blank for customer use  
Rev. 1.0, 2006-11  
35  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
5
Package Outlines  
FIGURE 5  
Package Outline Raw Card D L-DIM-200-33  
ꢅꢊꢒꢅ  
ꢇꢒꢆ 0$;ꢒ  
“ꢁꢒꢂ  
ꢅꢇꢒꢅ  
63'  
ꢂꢁꢁ  
ꢐꢄꢒꢂꢉꢑ  
ꢐꢄꢒꢃꢉꢑ  
“ꢁꢒꢂ  
ꢐꢄꢒꢃꢉꢑ  
“ꢁꢒꢂ  
ꢂꢊꢒꢉꢉ  
“ꢁꢒꢂ  
ꢄꢒꢊ  
ꢐꢂꢒꢉꢑ  
“ꢁꢒꢂ  
“ꢁꢒꢂ  
ꢂꢂꢒꢃ  
“ꢁꢒꢂ  
ꢃꢊꢒꢃ  
ꢐꢂꢒꢆꢑ  
“ꢁꢒꢂ  
ꢐꢄꢒꢂꢉꢑ  
ꢄꢁꢁ  
ꢄꢒꢃ  
ꢂꢁꢂ  
7KHUPDO 6HQVRU RSWLRQDO  
 0,1ꢒ  
'HWDLO RI FRQWDFWV  
“ꢁꢒꢁꢇ  
ꢁꢒꢃꢉ  
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ꢁꢒꢅ  
*/'ꢁꢋꢅꢉꢂ  
Notes  
1. Drawing according to ISO 8015  
2. Dimensions in mm  
3. General tolerances +/- 0.15  
Rev. 1.0, 2006-11  
36  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
6
Product Type Nomenclature  
Qimonda’s nomenclature uses simple coding combined with some proprietary coding. Table 24 provides examples for module  
and component product type number as well as the field number. The detailed field description together with possible values  
and coding explanation is listed for modules in Table 25 and for components in Table 26.  
TABLE 24  
Nomenclature Fields and Examples  
Example for  
Field Number  
1
2
3
4
5
6
7
8
9
10  
11  
Micro-DIMM  
DDR2 DRAM  
HYS  
HYB  
64  
18  
T
T
64/128  
0
2
0
0
K
A
M
C
–5  
–5  
–A  
512/1G 16  
TABLE 25  
DDR2 DIMM Nomenclature  
Field  
Description  
Values  
Coding  
1
2
Qimonda Module Prefix  
Module Data Width [bit]  
HYS  
64  
Constant  
Non-ECC  
ECC  
72  
3
4
DRAM Technology  
T
DDR2  
Memory Density per I/O [Mbit];  
Module Density1)  
32  
256 MByte  
512 MByte  
1 GByte  
2 GByte  
4 GByte  
64  
128  
256  
512  
0 .. 9  
0, 2, 4  
0 .. 9  
A .. Z  
D
5
6
7
8
9
Raw Card Generation  
Number of Module Ranks  
Product Variations  
Look up table  
1, 2, 4  
Look up table  
Look up table  
SO-DIMM  
Package, Lead-Free Status  
Module Type  
M
Micro-DIMM  
Registered  
Unbuffered  
Fully Buffered  
R
U
F
Rev. 1.0, 2006-11  
37  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Field  
Description  
Values  
Coding  
10  
Speed Grade  
–2.5F  
–2.5  
–3  
PC2–6400 5–5–5  
PC2–6400 6–6–6  
PC2–5300 4–4–4  
PC2–5300 5–5–5  
PC2–4200 4–4–4  
PC2–3200 3–3–3  
First  
–3S  
–3.7  
–5  
11  
Die Revision  
–A  
–B  
Second  
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall  
module memory density in MBytes as listed in column “Coding”.  
TABLE 26  
DDR2 DRAM Nomenclature  
Field  
Description  
Values  
Coding  
1
2
3
4
Qimonda Component Prefix  
Interface Voltage [V]  
HYB  
18  
Constant  
SSTL_18  
DRAM Technology  
T
DDR2  
Component Density [Mbit]  
256  
512  
1G  
2G  
40  
256 Mbit  
512 Mbit  
1 Gbit  
2 Gbit  
5+6  
Number of I/Os  
×4  
80  
×8  
16  
×16  
7
8
Product Variations  
Die Revision  
0 .. 9  
A
Look up table  
First  
B
Second  
9
Package, Lead-Free Status  
Speed Grade  
C
FBGA, lead-containing  
FBGA, lead-free  
DDR2-800 5-5-5  
DDR2-800 6-6-6  
DDR2-667 4-4-4  
DDR2-667 5-5-5  
DDR2-533 4-4-4  
DDR2-400 3-3-3  
F
10  
–25F  
–2.5  
–3  
–3S  
–3.7  
–5  
Rev. 1.0, 2006-11  
38  
11172006-DXYK-2PPW  
Internet Data Sheet  
HYS64T256022EDL–[25F/2.5/3/3S/3.7]–B  
Small Outline DDR2 SDRAM Modules  
Table of Contents  
1
1.1  
1.2  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
3
3.1  
3.2  
3.3  
3.3.1  
3.3.2  
3.3.3  
3.4  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Speed Grade Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Component AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17  
ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
IDD Specifications and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28  
4
5
6
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36  
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37  
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39  
Rev. 1.0, 2006-11  
39  
11172006-DXYK-2PPW  
Internet Data Sheet  
Edition 2006-11  
Published by Qimonda AG  
Gustav-Heinemann-Ring 212  
D-81739 München, Germany  
© Qimonda AG 2006.  
All Rights Reserved.  
Legal Disclaimer  
The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics  
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any  
information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in question please  
contact your nearest Qimonda Office.  
Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a  
failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect  
the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human  
body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health  
of the user or other persons may be endangered.  
www.qimonda.com  
厂商 型号 描述 页数 下载

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HYS64-72V2200GU-8 3.3V 2M ×64 /72- 1位BANK SDRAM模块3.3V 4M ×64 /72- 2位BANK SDRAM模块[ 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module ] 17 页

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HYS64-74V8200GU 3.3 V 8M ×64 /72- 1位银行SDRAM模块3.3 V 16M ×64 /72- 2位银行SDRAM模块[ 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module ] 17 页

INFINEON

HYS6472V16200GU 3.3 V 16M ×64 /72-位SDRAM模块3.3 V 32M ×64 /72-位SDRAM模块3.3 V 64M ×64 /72-位SDRAM模块[ 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules ] 17 页

INFINEON

HYS6472V4200GU 3.3V 4M ×64 /72- 1位BANK SDRAM模块3.3V 8M ×64 /72- 2位BANK SDRAM模块[ 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module ] 15 页

INFINEON

HYS64D128020GBDL-6-A [ DDR DRAM Module, 128MX64, 0.7ns, CMOS, SO-DIMM-200 ] 11 页

ETC

HYS64D128020GBDL-7-A ? 1GB ( 1024Mx64 ) PC2100 2银行?\n[ ?1GB (1024Mx64) PC2100 2-bank? ] 11 页

INFINEON

HYS64D128020GU-7-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

INFINEON

HYS64D128020GU-8-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

QIMONDA

HYS64D128020GU-8-A [ DDR DRAM Module, 128MX64, 0.8ns, CMOS, PDMA184 ] 18 页

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HYS64D128021 200针的小型双列直插式内存模块[ 200-Pin Small Outline Dual-In-Line Memory Modules ] 23 页

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