HYS72D32300,PDF,HYS72D32300 PDF资料,Datasheet,下载HYS72D32300技术资料

March 2007

HYS72D32300[G/H]BR–[5/6/7]–C

HYS72D64300[G/H]BR–[5/6/7]–C

HYS72D64320[G/H]BR–[5/6]–C

HYS72D128320[G/H]BR–[6/7]–C

184-Pin Registered Double Data Rate SDRAM Module

Reg DIMM

DDR SDRAM

Internet Data Sheet

Rev. 1.32

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

HYS72D32300[G/H]BR–[5/6/7]–C, HYS72D64300[G/H]BR–[5/6/7]–C, HYS72D64320[G/H]BR–[5/6]–C,

HYS72D128320[G/H]BR–[6/7]–C

Revision History: Rev. 1.32, 2007-03

Page

All

Subjects (major changes since last revision)

Adapted internet edition

Table updated

6

Previous Revision: Rev. 1.31, 2006-09

All Qimonda update

Previous Revision: Rev. 1.3, 2005-11

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

techdoc@qimonda.com

qag_techdoc_rev400 / 3.2 QAG / 2006-07-21

03292006-Q22P-G7TH

2

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

1

Overview

This chapter gives an overview of the 184-pin Registered Double Data Rate DDR2 SDRAM Modules with parity bit product

family and describes its main characteristics.

1.1

Features

•

184-Pin Registered 8-Byte Dual-In-Line DDR SDRAM

Module for “1U” PC, Workstation and Server main memory

applications

One rank 32M × 72 and 64M × 72 and two ranks 64M × 72

and 128M × 72 organization

JEDEC standard Double Data Rate Synchronous DRAMs

(DDR SDRAM) with a single + 2.5 V (± 0.2 V) power

supply and + 2.6 V (± 0.1 V) power supply for DDR400

Built with 256-Mbit DDR SDRAMs in P--TFBGA-60-1

packages

•

Auto Refresh (CBR) and Self Refresh

All inputs and outputs SSTL_2 compatible

Re-drive for all input signals using register and PLL

devices.

•

Serial Presence Detect with E²PROM

Low Profile Modules form factor: 133.35 mm × 28.58 mm

× 4.00 mm / 2.64 mm and for 1GB 133.35 mm × 30.48 mm

(1.2”)× 4.00 mm

•

JEDEC standard reference layout for one rank 256 MB,

512 MB and two ranks 512 MB, 1 GB: PC 2700 and

PC 3200 Registered DIMM Raw Cards A,B,C,D

Gold plated contacts

Programmable CAS Latency, Burst Length, and Wrap

Sequence (Sequential & Interleave)

TABLE 1

Performance

Part Number Speed Code

-5

–6

-7

Unit

Speed Grade Component

Module

DDR400B

PC3200-3033

200

DDR333B

PC2700–2533

166

DDR266A

—

PC2100-2033

—

max. Clock

Frequency

@CL3

@CL2.5

@CL2

f_CK3

—

MHz

f_CK2.5

f_CK2

166

143

133

1.2

Description

The HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C and devices and a PLL for the clock distribution. This reduces

HYS72D64320GBR–5–C are low profile versions of the

standard Registered DIMM modules suitable for 1U Server

Applications. The Low Profile DIMM versions are available as

32M × 72 (256 MB), 64M × 72 (512 MB), 128M × 72 (1 GB)

capacitive loading to the system bus, but adds one cycle to

the SDRAM timing. A variety of decoupling capacitors are

mounted on the PC board. The DIMMs feature serial

presence detect based on a serial E²PROM device using the

2-pin I²C protocol. The first 128 bytes are programmed with

configuration data and the second 128 bytes are available to

the customer.

The memory array is designed with Double Data Rate

Synchronous DRAMs for ECC applications. All control and

address signals are re-driven on the DIMM using register

Rev. 1.32, 2007-03

3

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 2

Ordering Information for Lead-Containing Products

Product Type

Compliance Code

Description

SDRAM

Technology

PC3200 (CL = 3.0)

HYS72D32300GBR–5–C

HYS72D64300GBR–5–C

HYS72D64320GBR–5–C

PC2700 (CL = 2.5)

PC3200R–30330–A0

PC3200R–30330–C0

PC3200R–30330–B0

1 Rank 256 MB Registered DIMM ECC

1 Rank 512 MB Registered DIMM ECC

2 Ranks 512 MB Registered DIMM ECC

256 Mbit (×8)

256 Mbit (×4)

256 Mbit (×8)

HYS72D32300GBR–6–C

HYS72D64300GBR–6–C

HYS72D64320GBR–6–C

HYS72D128320GBR–6–C

PC2100 (CL = 2.0)

PC2700R–25330–A0

PC2700R–25330–C0

PC2700R–25330–B0

PC2700R–25330–D0

1 Rank 256 MB Registered DIMM ECC

1 Rank 512 MB Registered DIMM ECC

2 Ranks 512 MB Registered DIMM ECC

2 Ranks 1 GB Registered DIMM ECC

256 Mbit (×8)

256 Mbit (×4)

256 Mbit (×8)

256 Mbit (×4)

HYS72D32300GBR–7–C

HYS72D64300GBR–7–C

HYS72D128320GBR–7–C

PC2100R–20330–A0

PC2100R–20330–C0

PC2100R–20330–D0

1 Rank 256 MB Registered DIMM ECC

1 Rank 512 MB Registered DIMM ECC

2 Ranks 1 GB Registered DIMM ECC

256 Mbit (×8)

256 Mbit (×4)

Rev. 1.32, 2007-03

4

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 3

Ordering Information for Lead-Free (RoHS Compliant) Products

Product Type ¹⁾

Compliance Code²⁾Description

SDRAM

Note³⁾

Technology

PC3200 (CL = 3.0)

HYS72D32300HBR–5–C

HYS72D64300HBR–5–C

HYS72D64320HBR–5–C

PC2700 (CL = 2.5)

PC3200R–30330–A0 1 Rank 256 MB Registered DIMM ECC 256 Mbit (×8)

PC3200R–30330–C0 1 Rank 512 MB Registered DIMM ECC 256 Mbit (×4)

PC3200R–30330–B0 2 Ranks 512 MB Registered DIMM ECC 256 Mbit (×8)

HYS72D32300HBR–6–C

HYS72D64300HBR–6–C

HYS72D64320HBR–6–C

PC2700R–25330–A0 1 Rank 256 MB Registered DIMM ECC 256 Mbit (×8)

PC2700R–25330–C0 1 Rank 512 MB Registered DIMM ECC 256 Mbit (×4)

PC2700R–25330–B0 2 Ranks 512 MB Registered DIMM ECC 256 Mbit (×8)

HYS72D128320HBR–6–C PC2700R–25330–D0 2 Ranks 1 GB Registered DIMM ECC

256 Mbit (×4)

PC2100 (CL = 2.0)

HYS72D32300HBR–7–C

HYS72D64300HBR–7–C

PC2100R–20330–A0 1 Rank 256 MB Registered DIMM ECC 256 Mbit (×8)

PC2100R–20330–C0 1 Rank 512 MB Registered DIMM ECC 256 Mbit (×4)

256 Mbit (×4)

HYS72D128320HBR–7–C PC2100R–20330–D0 2 Ranks 1 GB Registered DIMM ECC

1) All product types end with a place code designating the silicon-die revision. Reference information available on request.

Example: HYS72D128300GBR-5-B, indicating Rev.B die are used for SDRAM components.

2) The Compliance Code is printed on the module labels and describes the speed sort (for example “PC2100R”), the latencies (for example

“20330” means CAS latency of 2.0 clocks, Row-Column-Delay (RCD) latency of 3 clocks and Row Precharge latency of 3 clocks), JEDEC

SPD code definition version 0, and the Raw Card used for this module.

3) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined

in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,

lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.

Rev. 1.32, 2007-03

5

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

2

Pin Configuration

The pin configuration of the Registered DDR SDRAM DIMM

is listed by function in Table 4 (184 pins). The abbreviations

used in columns Pin and Buffer Type are explained in Table 5

and Table 6 respectively. The pin numbering is depicted in

Figure 1.

Pin Name

#

Type Type

Buffer Function

125 A6

I

SSTL

Address Bus 11:0

29

122 A8

27 A9

A7

TABLE 4

Pin Configuration of RDIMM

141 A10

AP

Pin Name

#

Type Type

Buffer Function

118 A11

115 A12

Clock Signals

137 CK0

Address Signal 12

Note: Module based on

256 Mbit or larger

dies

I

SSTL

Clock Signal

138 CK0

Complement Clock

Clock Enable Rank 0

Clock Enable Rank 1

Note: 2-rank module

Note: 1-rank module

21

CKE0

NC

I

—

Note: 128 Mbit based

module

111 CKE1

167 A13

SSTL

Address Signal 13

NC

SSTL

Note: 1 Gbit based

module

Control Signals

157 S0

158 S1

I

SSTL

Chip Select of Rank 0

Chip Select of Rank 1

Note: 2-ranks module

Note: 1-rank module

Row Address Strobe

Column Address Strobe

Write Enable

NC

—

Note: Module based on

512 Mbit or smaller

dies

Data Signals

NC

—

2

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

DQ8

DQ9

DQ10

DQ11

I/O

SSTL

Data Bus 63:0

154 RAS

I

SSTL

4

65

63

10

CAS

6

WE

8

RESET

LV-

CMOS

Register Reset

94

95

98

99

12

13

19

20

Address Signals

59

52

48

43

41

BA0

BA1

A0

I

SSTL

Bank Address Bus 1:0

Address Bus 11:0

A1

A2

130 A3

37

32

A4

A5

Rev. 1.32, 2007-03

03292006-Q22P-G7TH

6

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Pin Name

#

Type Type

Buffer Function

Pin Name

#

Type Type

Buffer Function

105 DQ12

106 DQ13

109 DQ14

110 DQ15

I/O

SSTL

Data Bus 63:0

165 DQ52

166 DQ53

170 DQ54

171 DQ55

I/O

I

SSTL

Data Bus 63:0

23

24

28

31

DQ16

DQ17

DQ18

DQ19

83

84

87

88

DQ56

DQ57

DQ58

DQ59

114 DQ20

117 DQ21

121 DQ22

123 DQ23

174 DQ60

175 DQ61

178 DQ62

179 DQ63

33

35

39

40

DQ24

DQ25

DQ26

DQ27

44

45

49

51

CB0

CB1

CB2

CB3

Check Bits 7:0

126 DQ28

127 DQ29

131 DQ30

133 DQ31

134 CB4

135 CB5

142 CB6

144 CB7

53

55

57

60

DQ32

DQ33

DQ34

DQ35

5

DQS0

Data Strobes 8:0

14

25

36

56

67

78

86

47

97

DQS1

DQS2

DQS3

DQS4

DQS5

DQS6

DQS7

DQS8

DM0

146 DQ36

147 DQ37

150 DQ38

151 DQ39

Data Strobes 8:0

61

64

68

69

DQ40

DQ41

DQ42

DQ43

Data Mask 0

Note: ×8 based module

Data Strobe 9

DQS9

I/O

I

SSTL

Note: ×4 based module

Data Mask 1

153 DQ44

155 DQ45

161 DQ46

162 DQ47

107 DM1

Note: ×8 based module

Data Strobe 10

DQS10 I/O

Note: ×4 based module

72

73

79

80

DQ48

DQ49

DQ50

DQ51

Rev. 1.32, 2007-03

03292006-Q22P-G7TH

7

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Pin Name

#

Type Type

Buffer Function

Pin Name

#

Type Type

Buffer Function

119 DM2

I

SSTL

Data Mask 2

15, V_DDQ

22,

30,

54,

62,

PWR

—

I/O Driver Power Supply

Note: ×8 based module

Data Strobe 11

DQS11 I/O

Note: ×4 based module

Data Mask 3

129 DM3

I

77,

96,

Note: ×8 based module

Data Strobe 12

104,

112,

128,

136,

143,

156,

164,

172,

180

DQS12 I/O

Note: ×4 based module

Data Mask 4

149 DM4

I

Note: ×8 based module

Data Strobe 13

DQS13 I/O

Note: ×4 based module

Data Mask 5

159 DM5

I

Note: ×8 based module

Data Strobe 14

7,

V_DD

PWR

—

Power Supply

DQS14 I/O

38,

46,

70,

85,

108,

120,

148,

168

Note: ×4 based module

Data Mask 6

169 DM6

I

Note: ×8 based module

Data Strobe 15

DQS15 I/O

Note: ×4 based module

Data Mask 7

177 DM7

I

3,

V_SS

GND

—

Ground Plane

Note: ×8 based module

Data Strobe 16

11,

18,

26,

34,

42,

50,

58,

66,

DQS16 I/O

Note: ×4 based module

Data Mask 8

140 DM8

I

Note: ×8 based module

Data Strobe 17

DQS17 I/O

Note: ×4 based module

E²PROM

74,

81,

89,

93,

92

91

SCL

SDA

I

CMOS Serial Bus Clock

OD Serial Bus Data

I/O

181 SA0

182 SA1

183 SA2

I

CMOS Slave Address Select

100,

116,

124,

132,

139,

145,

152,

160,

176

Bus 2:0

CMOS

Power Supplies

V_REFAI

1

—

I/O Reference Voltage

E²PROM Power Supply

184 V_DDSPDPWR

Rev. 1.32, 2007-03

8

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Pin Name

#

Type Type

Buffer Function

TABLE 5

Abbreviations for Pin Type

Other Pins

Abbreviatio Description

n

82

V_DDID

O

OD

—

V

_DDIdentification

9,

16,

17,

NC

Not connected

I

Standard input-only pin. Digital levels.

Output. Digital levels.

O

71,

75,

76,

I/O

AI

I/O is a bidirectional input/output signal.

Input. Analog levels.

PWR

GND

NU

NC

Power

90,

101,

102,

103,

113,

163,

173

Ground

Not Usable (JEDEC Standard)

Not Connected (JEDEC Standard)

TABLE 6

Abbreviations for Buffer Type

Abbreviatio Description

n

SSTL

Serial Stub Terminalted Logic (SSTL2)

LV-CMOS

CMOS

OD

Low Voltage CMOS

CMOS Levels

Open Drain. The corresponding pin has 2

operational states, active low and tristate,

and allows multiple devices to share as a

wire-OR.

Rev. 1.32, 2007-03

03292006-Q22P-G7TH

9

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

FIGURE 1

Pin Configuration 184 Pins, Reg

9₆₆

3LQꢁꢀꢆꢃ ꢉ

9

₅₍₎ꢉ 3LQꢁꢀꢀꢂ

'4ꢀꢀ ꢉ 3LQꢁꢀꢀꢇ

'4ꢀꢂ ꢉ 3LQꢁꢀꢀꢈ

'4ꢀꢇ ꢉ 3LQꢁꢀꢀꢊ

'4ꢀꢃ ꢉ 3LQꢁꢀꢀꢋ

5(6(7 ꢉ 3LQꢁꢀꢂꢀ

'4ꢀꢋ ꢉ 3LQꢁꢀꢂꢇ

'46ꢂ ꢉ 3LQꢁꢀꢂꢈ

1& ꢉ 3LQꢁꢀꢂꢊ

3LQꢁꢀꢆꢈ ꢉ '4ꢀꢈ

9₆₆ꢉ 3LQꢁꢀꢀꢃ

3LQꢁꢀꢆꢄ ꢉ '4ꢀꢄ

3LQꢁꢀꢆꢅ ꢉ '4ꢀꢀꢌ'4

3LQꢁꢀꢆꢆ ꢉ '4ꢀꢅ

3LQꢁꢂꢀꢂ ꢉ 1&

9

3LQꢁꢀꢆꢊ ꢉ

3LQꢁꢀꢆꢋ ꢉ '4ꢀꢊ

''4

'46ꢀ ꢉ 3LQꢁꢀꢀꢄ

9_''

ꢉ 3LQꢁꢀꢀꢅ

1& ꢉ 3LQꢁꢀꢀꢆ

9₆₆

9

3LQꢁꢂꢀꢀ ꢉ

3LQꢁꢂꢀꢇ ꢉ 1&

66

ꢉ 3LQꢁꢀꢂꢂ

'4ꢀꢆ ꢉ 3LQꢁꢀꢂꢃ

9_''4

3LQꢁꢂꢀꢃ ꢉ 1&

9

3LQꢁꢂꢀꢈ ꢉ

3LQꢁꢂꢀꢊ ꢉ '4ꢂꢃ

''4

3LQꢁꢂꢀꢄ ꢉ '4ꢂꢄ

3LQꢁꢂꢀꢅ ꢉ '0ꢂꢌ'46

3LQꢁꢂꢀꢆ ꢉ '4ꢂꢈ

3LQꢁꢂꢂꢂꢁꢁꢉ &.(ꢂꢌ1&

3LQꢁꢂꢂꢃ ꢉ 1&

3LQꢁꢂꢂꢄ ꢉ $ꢂꢇꢌ1&

3LQꢁꢂꢂꢅ ꢉ '4ꢇꢂ

3ꢁLQꢁꢂꢂꢆ ꢉ '0ꢇꢌ'46

3LQꢁꢂꢇꢂ ꢉ '4ꢇꢇ

3LQꢁꢂꢇꢃ ꢉ '4ꢇꢃ

3LQꢁꢂꢇꢄ ꢉ $ꢊ

3LQꢁꢂꢇꢅ ꢉ '4ꢇꢆ

3LQꢁꢂꢇꢆ ꢉ '0ꢃꢌ'46

3LQꢁꢂꢃꢂ ꢉ '4ꢃꢀ

3LQꢁꢂꢃꢃ ꢉ '4ꢃꢂ

3LQꢁꢂꢃꢄ ꢉ &%ꢀꢄ

3LQꢁꢂꢃꢅ ꢉ &.ꢀ

3LQꢁꢂꢃꢆ ꢉ 9₆₆

ꢉ 3LQꢁꢀꢂꢄ

9

3LQꢁꢂꢀꢋ ꢉ

3LQꢁꢂꢂꢀ ꢉ '4ꢂꢄ

''

1& ꢉ 3LQꢁꢀꢂꢅ

'4ꢂꢀ ꢉ 3LQꢁꢀꢂꢆ

&.(ꢀ ꢉ 3LQꢁꢀꢇꢂ

'4ꢂꢊ ꢉ 3LQꢁꢀꢇꢃ

'46ꢇ ꢉ 3LQꢁꢀꢇꢄ

$ꢆ ꢉ 3LQꢁꢀꢇꢅ

9

₆₆ꢉ 3LQꢁꢀꢂꢋ

'4ꢂꢂ ꢉ 3LQꢁꢀꢇꢀ

9_''4

9

3LQꢁꢂꢂꢇ ꢉ

3LQꢁꢂꢂꢈ ꢉ '4ꢇꢀ

9₆₆

''4

ꢉ 3LQꢁꢀꢇꢇ

'4ꢂꢅ ꢉ 3LQꢁꢀꢇꢈ

9₆₆

3LQꢁꢂꢂꢊ ꢉ

3LQꢁꢂꢂꢋ ꢉ $ꢂꢂ

9_''

ꢉ 3LQꢁꢀꢇꢊ

'4ꢂꢋ ꢉ 3LQꢁꢀꢇꢋ

9_''4

3LQꢁꢂꢇꢀ ꢉ

3LQꢁꢂꢇꢇ ꢉ $ꢋ

$ꢅ ꢉ 3LQꢁꢀꢇꢆ

ꢉ 3LQꢁꢀꢃꢀ

$ꢄ ꢉ 3LQꢁꢀꢃꢇ

9₆₆

'4ꢂꢆ ꢉ 3LQꢁꢀꢃꢂ

'4ꢇꢈ ꢉ 3LQꢁꢀꢃꢃ

'4ꢇꢄ ꢉ 3LQꢁꢀꢃꢄ

$ꢈ ꢉ 3LQꢁꢀꢃꢅ

'4ꢇꢊ ꢉ 3LQꢁꢀꢃꢆ

$ꢇ ꢉ 3LQꢁꢀꢈꢂ

9₆₆

3LQꢁꢂꢇꢈ ꢉ

ꢉ 3LQꢁꢀꢃꢈ

'46ꢃ ꢉ 3LQꢁꢀꢃꢊ

9_''

3LQꢁꢂꢇꢊ ꢉ '4ꢇꢋ

9_''4

3LQꢁꢂꢇꢋ ꢉ

3LQꢁꢂꢃꢀ ꢉ $ꢃ

ꢉ 3LQꢁꢀꢃꢋ

'4ꢇꢅ ꢉ 3LQꢁꢀꢈꢀ

9₆₆

3LQꢁꢂꢃꢇ ꢉ

ꢉ 3LQꢁꢀꢈꢇ

&%ꢀꢀ ꢉ 3LQꢁꢀꢈꢈ

9_''

3LQꢁꢂꢃꢈ ꢉ &%ꢀꢈ

$ꢂ ꢉ 3LQꢁꢀꢈꢃ

9_''4

3LQꢁꢂꢃꢊ ꢉ

&%ꢀꢂ ꢉ 3LQꢁꢀꢈꢄ

'46ꢋ ꢉ 3LQꢁꢀꢈꢅ

&%ꢀꢇ ꢉ 3LQꢁꢀꢈꢆ

&%ꢀꢃ ꢉ 3LQꢁꢀꢄꢂꢁꢁ

ꢉ 3LQꢁꢀꢈꢊ

$ꢀ ꢉ 3LQꢁꢀꢈꢋ

9₆₆

3LQꢁꢂꢃꢋ ꢉ &.ꢀ

3LQꢁꢂꢈꢀ ꢉ '0ꢋꢌ'46ꢂꢅ

3LQꢁꢂꢈꢇ ꢉ &%ꢀꢊ

3LQꢁꢂꢈꢈ ꢉ &%ꢀꢅ

3LQꢁꢂꢈꢂ ꢉ $ꢂꢀꢌ$3

ꢉ 3LQꢁꢀꢄꢀ

9_''4

3LQꢁꢂꢈꢃ ꢉ

%$ꢂ ꢉ 3LQꢁꢀꢄꢇ

9₆₆

ꢉ

'4ꢃꢇ 3LQꢁꢀꢄꢃ

3LQꢁꢂꢈꢄ

ꢁꢁꢁꢁꢁꢁ

ꢉ

9_''4

3LQꢁꢂꢈꢊ

'4ꢃꢊ

ꢉ 3LQꢁꢀꢄꢈ

ꢉ

'4ꢃꢃ 3LQꢁꢀꢄꢄ

3LQꢁꢂꢈꢅ '4ꢃꢅ

3LQꢁꢂꢈꢆ '0ꢈꢌ'46

3LQꢁꢂꢄꢂ '4ꢃꢆ

3LQꢁꢂꢄꢃ '4ꢈꢈ

3LQꢁꢂꢄꢄ '4ꢈꢄ

3LQꢁꢂꢄꢅ 6ꢀ

3LQꢁꢂꢄꢆ '0ꢄꢌ'46

3LQꢁꢂꢊꢂ '4ꢈꢊ

3LQꢁꢂꢊꢃ 1&

3LQꢁꢂꢊꢄ '4ꢄꢇ

3LQꢁꢂꢊꢅ $ꢂꢃꢌ1&

3LQꢁꢂꢊꢆ '0ꢊꢌ'46

3LQꢁꢂꢅꢂ '4ꢄꢄ

3LQꢁꢂꢅꢃ 1&

3LQꢁꢂꢅꢄ '4ꢊꢂ

3LQꢁꢂꢅꢅ '0ꢅꢌ'46

ꢉ

3LQꢁꢂꢈꢋ 9_''

'46ꢈ

9₆₆

ꢉ 3LQꢁꢀꢄꢊ

ꢉ 3LQꢁꢀꢄꢋ

ꢉ 3LQꢁꢀꢊꢀ

ꢉ 3LQꢁꢀꢊꢇ

ꢉ 3LQꢁꢀꢊꢈ

ꢉ 3LQꢁꢀꢊꢊ

ꢉ 3LQꢁꢀꢊꢋ

ꢉ 3LQꢁꢀꢅꢀ

ꢉ 3LQꢁꢀꢅꢇ

ꢉ 3LQꢁꢀꢅꢈ

ꢉ 3LQꢁꢀꢅꢊ

ꢉ 3LQꢁꢀꢅꢋ

ꢉ 3LQꢁꢀꢋꢀ

ꢉ 3LQꢁꢀꢋꢇ

ꢉ 3LQꢁꢀꢋꢈ

ꢉ 3LQꢁꢀꢋꢊ

ꢉ 3LQꢁꢀꢋꢋ

ꢉ 3LQꢁꢀꢆꢀ

ꢉ 3LQꢁꢀꢆꢇ

ꢉ

'4ꢃꢈ 3LQꢁꢀꢄꢅ

ꢉ

3LQꢁꢂꢄꢀ '4ꢃꢋ

ꢉ

%$ꢀ 3LQꢁꢀꢄꢆ

ꢉ

3LQꢁꢂꢄꢇ 9₆₆

'4ꢃꢄ

9_''4

ꢉ

'4ꢈꢀ 3LQꢁꢀꢊꢂ

ꢉ

3LQꢁꢂꢄꢈ 5$6

ꢉ

:( 3LQꢁꢀꢊꢃ

ꢉ

3LQꢁꢂꢄꢊ 9_''4

'4ꢈꢂ

9₆₆

ꢉ

&$6 3LQꢁꢀꢊꢄ

ꢉ

3LQꢁꢂꢄꢋ 6ꢂꢌ1&

ꢉ

'46ꢄ 3LQꢁꢀꢊꢅ

ꢉ

3LQꢁꢂꢊꢀ 9₆₆

'4ꢈꢇ

9_''

ꢉ

'4ꢈꢃꢁ 3LQꢁꢀꢊꢆ

ꢉ

3LQꢁꢂꢊꢇ '4ꢈꢅ

ꢉ

1& 3LQꢁꢀꢅꢂ

ꢉ

3LQꢁꢂꢊꢈ 9_''4

'4ꢈꢋ

9₆₆

ꢉ

'4ꢈꢆ 3LQꢁꢀꢅꢃ

ꢉ

3LQꢁꢂꢊꢊ '4ꢄꢃ

ꢉ

1& 3LQꢁꢀꢅꢄ

ꢉ

3LQꢁꢂꢊꢋ 9_''

1&

'46ꢊ

'4ꢄꢂ

9_'','

9

_''4ꢉ

3LQꢁꢀꢅꢅ

ꢉ

3LQꢁꢂꢅꢀ '4ꢄꢈ

ꢉ

'4ꢄꢀ 3LQꢁꢀꢅꢆ

ꢉ

3LQꢁꢂꢅꢇ 9_''4

9

₆₆ꢉ

3LQꢁꢀꢋꢂ

ꢉ

3LQꢁꢂꢅꢈ '4ꢊꢀ

ꢉ

'4ꢄꢊ 3LQꢁꢀꢋꢃ

ꢉ

3LQꢁꢂꢅꢊ 9₆₆

'4ꢄꢅ

'46ꢅ

'4ꢄꢆ

1&

9

ꢉ

_''ꢉ

3LQꢁꢀꢋꢄ

ꢉ

3LQꢁꢂꢅꢋ '4ꢊꢇ

ꢉ

'4ꢄꢋ 3LQꢁꢀꢋꢅ

3LQꢁꢂꢅꢆ '4ꢊꢃ

3LQꢁꢂꢋꢂ 6$ꢀ

3LQꢁꢂꢋꢃ 6$ꢇ

ꢉ

3LQꢁꢂꢋꢀ 9_''4

9

₆₆ꢉ

3LQꢁꢀꢋꢆ

ꢉ

3LQꢁꢂꢋꢇ 6$ꢂ

ꢉ

6'$ 3LQꢁꢀꢆꢂ

ꢉ

3LQꢁꢂꢋꢈ 9_''63'

6&/

033'ꢀ

TABLE 7

Address Table

Density Organization

Memory SDRAMs

Ranks

# of SDRAMs

# of row/rank/

columns bits

Refresh

Period

Interval

256 MB 32 M ×72

512 MB 64 M ×72

1

2

32 M ×8

64 M ×4

32 M ×8

64 M ×4

9

13 / 2 / 10

13 / 2 / 11

13 / 2 / 10

13 / 2 / 11

8 K

64 ms

7.8 µs

18

36

1 GB

128 M ×72

Rev. 1.32, 2007-03

10

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

3

Electrical Characteristics

This chapter lists the electrical characteristics.

3.1

Operating Conditions

This chapter contains the operating conditions tables.

TABLE 8

Absolute Maximum Ratings

Parameter

Symbol

Values

typ.

Unit Note/ Test

Condition

min.

max.

Voltage on I/O pins relative to V_SS

Voltage on inputs relative to V_SS

Voltage on V_DDsupply relative to V_SS

Voltage on V_DDQsupply relative to V_SS

Operating temperature (ambient)

Storage temperature (plastic)

V_IN, V_OUT

V_IN

–0.5

–1

0

—

1

V

_DDQ+0.5

V

+3.6

+70

+150

—

V

V_DD

V

V_DDQ

T_A

V

°C

W

mA

T_STG

P_D

–55

—

Power dissipation (per SDRAM component)

Short circuit output current

I_OUT

—

50

—

Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This is a stress

rating only, and functional operation should be restricted to recommended operation conditions. Exposure

to absolute maximum rating conditions for extended periods of time may affect device reliability and

exceeding only one of the values may cause irreversible damage to the integrated circuit.

TABLE 9

Electrical Characteristics and DC Operating Conditions

Parameter

Symbol

Values

Unit Note¹⁾/Test Condition

Min.

Typ.

Max.

Device Supply Voltage

Output Supply Voltage

E²PROM supply voltage

V_DD

2.3

2.5

2.3

2.5

2.3

0

2.5

2.6

2.5

2.6

2.5

—

2.7

3.6

0

V

f_CK≤ 166 MHz

_CK> 166 MHz ²⁾

f_CK≤ 166 MHz ³⁾

_CK> 166 MHz ²⁾³⁾

V_DD

f

V_DDQ

V_DDSPD

f

Supply Voltage, I/O Supply

Voltage

V_SS,

V_SSQ

4)

5)

Input Reference Voltage

V_REF

V_TT

0.49 × V_DDQ0.5 × V_DDQ0.51 × V_DDQ

_REF– 0.04 _REF+ 0.04

V

I/O Termination Voltage

(System)

V

—

V

Rev. 1.32, 2007-03

11

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Parameter

Symbol

Values

Typ.

Unit Note¹⁾/Test Condition

Min.

Max.

6)

Input High (Logic1) Voltage V_IH(DC)

Input Low (Logic0) Voltage V_IL(DC)

V

_REF+ 0.15

—

V

_DDQ+ 0.3

_REF– 0.15

V

6)

–0.3

V

Input Voltage Level, CK and V_IN(DC)

_DDQ+ 0.3

CK Inputs

6)7)

8)

Input Differential Voltage, CK V_ID(DC)

and CK Inputs

0.36

0.71

–2

—

V

_DDQ+ 0.6

V

VI-Matching Pull-up Current VI_Ratio

to Pull-down Current

1.4

2

—

µA

Input Leakage Current

I_I

Any input 0 V ≤ V_IN≤ V_DD; All

other pins not under test = 0 V

6)9)

Output Leakage Current

I_OZ

–5

—

5

µA

DQs are disabled; 0 V ≤ V_OUT≤

V_DDQ

Output High Current, Normal I_OH

Strength Driver

—

–16.2

—

mA

V

_OUT= 1.95 V

_OUT= 0.35 V

Output Low Current, Normal I_OL

16.2

V

Strength Driver

1) 0 °C ≤ T_A≤ 70 °C

2) DDR400 conditions apply for all clock frequencies above 166 MHz

3) Under all conditions, V_DDQmust be less than or equal to V_DD

4) Peak to peak AC noise on V_REFmay not exceed ± 2% V_{REF (DC)}. V_REFis also expected to track noise variations in V_DDQ

5) _TTis not applied directly to the device. V_TTis a system supply for signal termination resistors, is expected to be set equal to V_REF, and

must track variations in the DC level of V_REF

6) Inputs are not recognized as valid until V_REFstabilizes.

7) _IDis the magnitude of the difference between the input level on CK and the input level on CK.

.

V

.

V

8) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire temperature and

voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the maximum difference between

pull-up and pull-down drivers due to process variation.

9) Values are shown per DDR SDRAM component

Rev. 1.32, 2007-03

12

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

3.2

Current Conditions

This chapter describes the Conditions.

TABLE 10

I_DDConditions

Parameter

Symbol

Operating Current 0

I_DD0

one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;

address and control inputs changing once every two clock cycles.

Operating Current 1

I_DD1

one bank; active/read/precharge; Burst Length = 4; see component data sheet.

Precharge Power-Down Standby Current

all banks idle; power-down mode; CKE ≤ V_IL,MAX

I_DD2P

I_DD2F

Precharge Floating Standby Current

CS ≥ V_IH,,MIN, all banks idle; CKE ≥ V_IH,MIN

;

address and other control inputs changing once per clock cycle; V_IN= V_REFfor DQ, DQS and DM.

Precharge Quiet Standby Current

I_DD2Q

CS ≥ V_IHMIN, all banks idle; CKE ≥ V_IH,MIN; V_IN= V_REFfor DQ, DQS and DM;

address and other control inputs stable at ≥ V_IH,MINor ≤ V_IL,MAX

.

Active Power-Down Standby Current

one bank active; power-down mode; CKE ≤ V_ILMAX; V_IN= V_REFfor DQ, DQS and DM.

I_DD3P

I_DD3N

Active Standby Current

one bank active; CS ≥ V_IH,MIN; CKE ≥ V_IH,MIN; t_RC= t_RAS,MAX

DQ, DM and DQS inputs changing twice per clock cycle;

address and control inputs changing once per clock cycle.

;

Operating Current Read

I_DD4R

one bank active; Burst Length = 2; reads; continuous burst;

address and control inputs changing once per clock cycle;

50 % of data outputs changing on every clock edge;

CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; I_OUT= 0 mA

Operating Current Write

I_DD4W

one bank active; Burst Length = 2; writes; continuous burst;

address and control inputs changing once per clock cycle;

50 % of data outputs changing on every clock edge;

CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B

Auto-Refresh Current

I_DD5

I_DD6

I_DD7

t

_RC= t_RFCMIN, burst refresh

Self-Refresh Current

CKE ≤ 0.2 V; external clock on

Operating Current 7

four bank interleaving with Burst Length = 4; see component data sheet.

Rev. 1.32, 2007-03

13

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

3.3

Current Specifications

This chapter describes the Specifications.

TABLE 11

I_DDSpecification for HYS72D[128/64/32]3xxx[G/H]BR–5–C

Product Type

Unit

Note/ Test Conditions^{1) 2)}

Organization

256 MB

×72

512 MB

×72

512 MB

×72

1 Rank

–5

1 Rank

–5

2 Ranks

–5

Symbol

Typ.

Max.

Typ.

Max.

Typ.

Max.

3)

I_DD0

1140

1360

390

1370

1600

440

2070

2380

730

2480

2800

790

1780

2000

730

2080

2310

790

mA

3)4)

5)

I_DD1

I_DD2P

I_DD2F

I_DD2Q

I_DD3P

I_DD3N

I_DD4R

I_DD4W

I_DD5

5)

880

990

1450

1020

890

1620

1200

720

1450

1020

890

1620

1200

1020

1780

2310

2350

2830

700

5)

540

650

5)

470

560

5)

950

1080

1600

1650

2120

370

1590

2470

2560

3190

640

1780

2800

2890

4130

700

1590

2040

2090

2270

640

3)4)

3)

1400

1450

1630

330

3)

5)

I_DD6

3)4)

I_DD7

2530

2950

4720

5500

3170

3660

1) Test condition for maximum values: V_DD= 2.7 V, T_A= 10 °C

2) Module I_DDis calculated on the basis of component I_DDand includes Register and PLL

3) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank) n * I_DD× [component] + n * I_DD3N[component] for two bank modules (n: number of

components per module bank)

4) DQ I/O (I_DDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions

5) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank)2 * n * I_DD× [component] for single two bank modules (n: number of components per module

bank)

Rev. 1.32, 2007-03

14

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 12

I_DDSpecification for HYS72D[256/128/64/32]3xxx[G/H]BR–6–C

Product Type

Unit Note/ Test Conditions^{1) 2)}

Organization

256 MB

×72

512 MB

×72

512 MB

×72

1 GB

×72

1 Rank

–6

1 Rank

–6

2 Ranks

–6

2 Ranks

–6

Symbol

Typ. Max. Typ. Max. Typ. Max. Typ. Max.

3)

I_DD0

1000 1190 1790 2110 1540 1780 2870 3290 mA

1210 1410 2090 2420 1750 2000 3160 3600 mA

3)4)

5)

I_DD1

I_DD2P

I_DD2F

I_DD2Q

I_DD3P

I_DD3N

I_DD4R

I_DD4W

I_DD5

370

780

480

430

840

410

880

580

500

950

650

710

650

710

1220 1300 mA

5)

1250 1400 1250 1400 2200 2440 mA

5)

890

780

1050 890

640 780

1050 1690 1980 mA

890 1480 1660 mA

5)

1380 1540 1380 1540 2450 2730 mA

3)4)

3)

1210 1410 2090 2420 1750 2000 3160 3600 mA

1250 1450 2180 2510 1790 2040 3250 3690 mA

1420 1820 2750 3510 1960 2410 3830 4690 mA

3)

5)

I_DD6

320

370

580

640

580

640

1110 1190 mA

3)4)

I_DD7

2200 2580 4070 4760 2740 3170 5140 5940 mA

1) Test condition for maximum values: V_DD= 2.7 V, T_A= 10 °C

2) Module I_DDis calculated on the basis of component I_DDand includes Register and PLL

3) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank)n * I_DD× [component] + n * I_DD3N[component] for two bank modules (n: number of

components per module bank)

4) DQ I/O (I_DDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions

5) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank)2 * n * I_DD× [component] for single two bank modules (n: number of components per module

bank)

Rev. 1.32, 2007-03

15

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 13

I_DDSpecification for HYS72D[128/64/32]3xxx[G/H]BR–7–C

Product Type

Unit

Note/ Test Conditions^{1) 2)}

Organization

256 MB

×72

512 MB

×72

1 GB

×72

1 Rank

–7

1 Rank

–7

2 Ranks

–7

Symbol

Typ.

Max.

Typ.

Max.

Typ.

Max.

3)

I_DD0

860

1040

1250

370

1510

1890

560

1830

2120

610

2410

2790

1010

1810

1440

1230

2100

2700

2790

3210

940

2870

3170

1080

2010

1690

1400

2440

3080

3170

4110

1030

4880

mA

3)4)

5)

I_DD1

1100

330

I_DD2P

I_DD2F

I_DD2Q

I_DD3P

I_DD3N

I_DD4R

I_DD4W

I_DD5

5)

670

760

1050

770

1180

910

5)

440

520

5)

380

450

660

570

5)

740

870

1200

1800

1890

2310

520

1390

2030

2120

3060

580

3)4)

3)

1060

1100

1210

300

1200

1250

1600

350

3)

5)

I_DD6

3)4)

I_DD7

1780

2100

3240

3830

4140

1) Test condition for maximum values: V_DD= 2.7 V, T_A= 10 °C

2) Module I_DDis calculated on the basis of component I_DDand includes Register and PLL

3) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank)n * I_DD× [component] + n * I_DD3N[component] for two bank modules (n: number of

components per module bank)

4) DQ I/O (I_DDQ) currents are not included into calculations: module IDD values will be measured differently depending on load conditions

5) The module I_DDvalues are calculated from the component I_DDdatasheet values are: n * I_DD× [component] for single bank modules

(n: number of components per module bank)2 * n * I_DD× [component] for single two bank modules (n: number of components per module

bank)

Rev. 1.32, 2007-03

16

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

3.4

AC Characteristics

This chapter describes the AC characteristics.

TABLE 14

AC Timing - Absolute Specifications for PC3200 and PC2700

Parameter

Symbol –5

–6

Unit Note/ Test

Condition ¹⁾

DDR400B

Min.

DDR333

Min.

Max.

2)3)4)5)

DQ output access time from CK/CK t_AC

–0.5

0.45

5

+0.5

0.55

8

–0.7

0.45

6

+0.7

0.55

12

ns

2)3)4)5)

CK high-level width

Clock cycle time

t_CH

t_CK

ns

t_CK

CL = 3.0 ^2)3)4)5)

CL = 2.5 ^2)3)4)5)

CL = 2.0 ^2)3)4)5)

6

12

6

12

7.5

0.45

12

7.5

0.45

12

2)3)4)5)

CK low-level width

t_CL

0.55

2)3)4)5)6)

Auto precharge write recovery +

precharge time

t_DAL

(tWR/tCK)+(tRP/tCK)

2)3)4)5)

DQ and DM input hold time

t_DH

0.4

—

0.45

1.75

—

ns

2)3)4)5)6)

DQ and DM input pulse width (each t_DIPW

1.75

input)

2)3)4)5)

DQS output access time from CK/CK t_DQSCK

–0.6

0.35

+0.6

—

–0.6

0.35

+0.6

—

ns

DQS input low (high) pulse width

(write cycle)

t_DQSL,H

t_CK

DQS-DQ skew (DQS and associated t_DQSQ

DQ signals)

Write command to 1^stDQS latching t_DQSS

—

+0.40

1.25

—

+0.40

1.25

ns

TFBGA ^2)3)4)5)

2)3)4)5)

0.72

0.75

t_CK

transition

2)3)4)5)

DQ and DM input setup time

t_DS

0.4

0.2

—

0.45

0.2

—

ns

DQS falling edge hold time from CK t_DSH

t_CK

(write cycle)

2)3)4)5)

DQS falling edge to CK setup time

(write cycle)

t_DSS

t_HP

0.2

—

0.2

—

t_CK

2)3)4)5)

Clock Half Period

min. (t_CL, t_CH) —

min. (t_CL, t_CH

)

—

ns

2)3)4)5)6)

Data-out high-impedance time from t_HZ

—

+0.7

–0.7

+0.7

CK/CK

Address and control input hold time t_IH

0.6

0.7

2.2

—

0.75

0.8

—

ns

fast slew rate

3)4)5)6)7)

slow slew

rate^3)4)5)6)7)

2)3)4)5)8)

Control and Addr. input pulse width t_IPW

2.2

(each input)

Rev. 1.32, 2007-03

17

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Parameter

Symbol –5

DDR400B

–6

Unit Note/ Test

Condition ¹⁾

DDR333

Min.

Max.

Min.

Max.

Address and control input setup time t_IS

0.6

—

0.75

—

ns

fast slew rate

3)4)5)6)7)

0.7

–0.7

2

—

0.8

–0.7

2

—

ns

t_CK

slow slew rate

3)4)5)6)7)

2)3)4)5)6)

2)3)4)5)

Data-out low-impedance time from

CK/CK

t_LZ

+0.7

—

+0.7

—

Mode register set command cycle

time

t_MRD

DQ/DQS output hold time

Data hold skew factor

t_QH

t

_HP–t_QHS

—

t

_HP–t_QHS

—

ns

t_QHS

t_RAP

t_RAS

t_RC

—

+0.50

—

+0.50

—

TFBGA ^2)3)4)5)

2)3)4)5)

Active to Autoprecharge delay

Active to Precharge command

t_RCD

40

t_RCD

42

2)3)4)5)

70E+3

—

70E+3 ns

Active to Active/Auto-refresh

command period

55

60

—

ns

2)3)4)5)

2)3)4)5)9)

2)3)4)5)

Active to Read or Write delay

t_RCD

t_REFI

15

—

65

—

18

—

72

—

ns

µs

ns

Average Periodic Refresh Interval

7.8

—

7.8

—

Auto-refresh to Active/Auto-refresh t_RFC

command period

2)3)4)5)

Precharge command period

Read preamble

t_RP

15

—

18

—

ns

t_CK

ns

t_RPRE

t_RPST

t_RRD

0.9

0.40

10

1.1

0.60

—

0.9

0.40

12

1.1

0.60

—

Read postamble

Active bank A to Active bank B

command

2)3)4)5)

2)3)4)5)8)

2)3)4)5)

Write preamble

t_WPRE

t_WPRES

t_WPST

t_WR

0.25

0

—

0.25

0

—

t_CK

ns

t_CK

ns

t_CK

ns

Write preamble setup time

Write postamble

—

0.40

15

2

0.60

—

0.40

15

1

0.60

—

Write recovery time

Internal write to read command delay t_WTR

—

Exit self-refresh to non-read

command

t_XSNR

75

—

75

—

2)3)4)5)

Exit self-refresh to read command

t_XSRD

200

—

200

—

t_CK

1) 0 °C ≤ T_A≤ 70 °C; V_DDQ= 2.5 V ± 0.2 V, V_DD= +2.5 V ± 0.2 V (DDR333); V_DDQ= 2.6 V ± 0.1 V, V_DD= +2.6 V ± 0.1 V (DDR400)

2) Input slew rate ≥ 1 V/ns for DDR400, DDR333

3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals

other than CK/CK, is V_REF. CK/CK slew rate are ≥ 1.0 V/ns.

4) Inputs are not recognized as valid until V_REFstabilizes.

5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is V_TT

.

6) For each of the terms, if not already an integer, round to the next highest integer. t_CKis equal to the actual system clock cycle time.

7) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured

between V_IH(ac)and V_IL(ac)

.

8) These parameters guarantee device timing, but they are not necessarily tested on each device.

9) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.

Rev. 1.32, 2007-03

18

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 15

AC Timing - Absolute Specifications for PC2700

Parameter

Symbol –7

Unit

Note/Test

Condition ¹⁾

DDR266A

Min.

Max.

2)3)4)5)

DQ output access time from CK/CK

CK high-level width

t_AC

t_CH

t_CK

–0.75

+0.75

0.55

12

ns

t_CK

ns

t_CK

ns

t_CK

ns

t_CK

ns

t_CK

ns

0.45

Clock cycle time

7.5

CL = 2.5^2)3)4)5)

CL = 2.0^2)3)4)5)

7.5

12

2)3)4)5)

CK low-level width

t_CL

0.45

0.55

—

2)3)4)5)6)

2)3)4)5)

Auto precharge write recovery + precharge time t_DAL

(t_WR/t_CK)+(t_RP/t_CK)

DQ and DM input hold time

t_DH

0.5

—

DQ and DM input pulse width (each input)

DQS output access time from CK/CK

DQS input low (high) pulse width (write cycle)

t_DIPW

t_DQSCK

t_DQSL,H

1.75

–0.75

0.35

—

+0.75

—

DQS-DQ skew (DQS and associated DQ signals) t_DQSQ

Write command to 1^stDQS latching transition

+0.5

1.25

—

FBGA^2)3)4)5)

2)3)4)5)

t_DQSS

t_DS

0.75

0.5

2)3)4)5)

2)3)4)5)6)

DQ and DM input setup time

DQS falling edge hold time from CK (write cycle) t_DSH

DQS falling edge to CK setup time (write cycle) t_DSS

0.2

—

0.2

—

Clock Half Period

t_HP

t_HZ

t_IH

min. (t_CL, t_CH

)

—

Data-out high-impedance time from CK/CK

Address and control input hold time

–0.75

+0.75

—

0.9

fast slew rate

3)4)5)6)7)

1.0

—

ns

slow slew rate

3)4)5)6)8)

2)3)4)5)8)

Control and Addr. input pulse width (each input) t_IPW

2.2

0.9

—

ns

Address and control input setup time

t_IS

fast slew rate

3)4)5)6)8)

1.0

—

ns

slow slew rate

3)4)5)6)8)

2)3)4)5)6)

2)3)4)5)

Data-out low-impedance time from CK/CK

Mode register set command cycle time

DQ/DQS output hold time

t_LZ

–0.75

2

+0.75

—

ns

t_CK

ns

µs

ns

t_MRD

t_QH

t

_HP– t_QHS

Data hold skew factor

t_QHS

t_RAP

t_RAS

t_RC

—

0.75

—

FBGA^2)3)4)5)

2)3)4)5)

Active to Read w/AP delay

t_RCDor t_RASmin

2)3)4)5)

2)3)4)5)8)

2)3)4)5)

Active to Precharge command

Active to Active/Auto-refresh command period

Active to Read or Write delay

45

65

20

7.8

75

120E+3

—

t_RCD

t_REFI

t_RFC

—

Average Periodic Refresh Interval

—

Auto-refresh to Active/Auto-refresh command

period

—

Rev. 1.32, 2007-03

19

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Parameter

Symbol –7

DDR266A

Unit

Note/Test

Condition ¹⁾

Min.

Max.

2)3)4)5)

2)3)4)5)9)

2)3)4)5)10)

2)3)4)5)

2)3)4)5)11)

2)3)4)5)

Precharge command period

Read preamble

t_RP

20

0.9

0.4

15

0.25

0

—

1.1

0.6

—

ns

t_RPRE

t_RPST

t_RRD

t_CK

ns

Read postamble

Active bank A to Active bank B command

Write preamble

t_WPRE

t_WPRES

t_WPST

t_WR

t_CK

ns

t_CK

ns

Write preamble setup time

Write postamble

0.4

15

1

Write recovery time

Internal write to read command delay

Exit self-refresh to non-read command

Exit self-refresh to read command

t_WTR

t_CK

ns

t_XSNR

t_XSRD

75

200

t_CK

1)

V_DDQ= 2.5 V ± 0.2 V, V_DD= +2.5 V ± 0.2 V ; 0 °C ≤ T_A≤ 70 °C

2) Input slew rate ≥ 1 V/ns

3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference level for signals

other than CK/CK, is V_REF. CK/CK slew rate are ≥ 1.0 V/ns.

4) Inputs are not recognized as valid until stabilizes.

5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is V_TT

6) _HZand t_LZtransitions occur in the same access time windows as valid data transitions. These parameters are not referred to a specific

voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).

7) Fast slew rate ≥ 1.0 V/ns , slow slew rate ≥ 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns, measured

between V_IH(ac)and V_IL(ac)

.

t

.

8) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.

9) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge. A valid transition

is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previously in progress on the

bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress, DQS could be HIGH, LOW, or transitioning from

HIGH to LOW at this time, depending on t_DQSS

.

10) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but system

performance (bus turnaround) degrades accordingly.

11) In all circumstances, t_XSNRcan be satisfied using t_XSNR= t_RFC,min+ 1 × t_CK

Rev. 1.32, 2007-03

20

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

4

SPD Codes

This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands

for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.

List of SPD Code Tables

•

Table 16 “HYS72D[32/64]3x0GBR-5-C” on Page 21

Table 17 “HYS72D[32/64/128]3x0GBR-6-C” on Page 25

Table 18 “HYS72D[32/64/128]3x0GBR-7-C” on Page 29

Table 19 “HYS72D[32/64]3x0HBR-5-C” on Page 33

Table 20 “HYS72D[32/64/128]3x0HBR-6-C” on Page 37

Table 21 “HYS72D[32/64/128]3x0HBR-7-C” on Page 41

TABLE 16

HYS72D[32/64]3x0GBR-5-C

Product Type

Organization

256MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

0

1

2

3

4

5

6

7

8

9

10

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

80

08

07

0D

0A

01

48

00

04

50

80

08

07

0D

0B

01

48

00

04

50

80

08

07

0D

0A

02

48

00

04

50

Data Width (LSB)

Data Width (MSB)

Interface Voltage Levels

t_CK@ CL_max(Byte 18) [ns]

t_ACSDRAM @ CL_max(Byte 18) [ns]

Rev. 1.32, 2007-03

21

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

11

12

13

14

15

16

17

18

19

20

21

22

23

24

25

26

27

28

29

30

31

32

33

34

35

Error Correction Support

Refresh Rate

02

82

08

01

0E

04

1C

01

02

26

C1

60

50

75

50

3C

28

3C

28

40

60

40

00

37

02

82

04

01

0E

04

1C

01

02

26

C1

60

50

75

50

3C

28

3C

28

80

60

40

00

37

02

82

08

01

0E

04

1C

01

02

26

C1

60

50

75

50

3C

28

3C

28

40

60

40

00

37

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

t_CK@ CL_max-0.5 (Byte 18) [ns]

t_ACSDRAM @ CL_max-0.5 [ns]

t

_CK@ CL_max-1 (Byte 18) [ns]

_ACSDRAM @ CL_max-1 [ns]

t

t_RPmin[ns]

t

_RRDmin[ns]

_RCDmin[ns]

t

t_RASmin[ns]

Module Density per Rank

t_AS,t_CS[ns]

t_AH,t_CH[ns]

t

_DS[ns]

_DH[ns]

t

36 - 40 Not used

41 _RCmin[ns]

t

Rev. 1.32, 2007-03

22

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

42

43

44

45

46

47

t_RFCmin[ns]

t_CKmax[ns]

41

28

50

00

01

00

10

26

7F

51

00

xx

41

28

50

00

01

00

10

5F

7F

51

00

xx

41

28

50

00

01

00

10

27

7F

51

00

xx

t

_DQSQmax[ns]

_QHSmax[ns]

t

not used

DIMM PCB Height

48 - 61 Not used

SPD Revision

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Manufacturer’s JEDEC ID Code (2)

Manufacturer’s JEDEC ID Code (3)

Manufacturer’s JEDEC ID Code (4)

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

37

32

44

33

32

33

30

47

37

32

44

36

34

33

30

47

37

32

44

36

34

33

32

30

47

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Rev. 1.32, 2007-03

23

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

82

83

84

85

86

87

88

89

90

91

92

93

94

Part Number, Char 10

42

52

35

43

20

1x

xx

00

42

52

35

43

20

1x

xx

00

42

52

35

43

20

1x

xx

00

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Part Number, Char 18

Module Revision Code

Test Program Revision Code

Module Manufacturing Date Year

Module Manufacturing Date Week

95 - 98 Module Serial Number

99 - 127 Not used

Rev. 1.32, 2007-03

24

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 17

HYS72D[32/64/128]3x0GBR-6-C

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

0

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

Data Width (LSB)

80

08

07

0D

0A

01

48

00

04

60

70

02

82

08

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0B

01

48

00

04

60

70

02

82

04

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0A

02

48

00

04

60

70

02

82

08

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0B

02

48

00

04

60

70

02

82

04

01

0E

04

0C

01

02

26

C1

1

2

3

4

5

6

7

Data Width (MSB)

8

Interface Voltage Levels

t_CK@ CL_max(Byte 18) [ns]

t_ACSDRAM @ CL_max(Byte 18) [ns]

Error Correction Support

Refresh Rate

9

10

11

12

13

14

15

16

17

18

19

20

21

22

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

Rev. 1.32, 2007-03

25

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

23

24

25

26

27

28

29

30

31

32

33

34

35

t_CK@ CL_max-0.5 (Byte 18) [ns]

75

70

00

48

30

48

2A

40

75

45

00

3C

48

30

28

50

00

0F

7F

75

70

00

48

30

48

2A

80

75

45

00

3C

48

30

28

50

00

48

7F

75

70

00

48

30

48

2A

40

75

45

00

3C

48

30

28

50

00

10

7F

75

70

00

48

30

48

2A

80

75

45

00

3C

48

30

28

50

00

49

7F

t_ACSDRAM @ CL_max-0.5 [ns]

t_CK@ CL_max-1 (Byte 18) [ns]

t

_ACSDRAM @ CL_max-1 [ns]

_RPmin[ns]

t

t_RRDmin[ns]

t

_RCDmin[ns]

_RASmin[ns]

t

Module Density per Rank

t

_AS,t_CS[ns]

_AH,t_CH[ns]

t

t_DS[ns]

_DH[ns]

t

36 - 40 Not used

41

42

43

44

45

46

47

t_RCmin[ns]

t

_RFCmin[ns]

_CKmax[ns]

t

t_DQSQmax[ns]

_QHSmax[ns]

t

not used

DIMM PCB Height

48 - 61 Not used

62

63

64

SPD Revision

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Rev. 1.32, 2007-03

26

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

65

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

Manufacturer’s JEDEC ID Code (2)

Manufacturer’s JEDEC ID Code (3)

Manufacturer’s JEDEC ID Code (4)

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

37

32

44

33

32

33

30

47

42

52

36

43

20

37

32

44

36

34

33

30

47

42

52

36

43

20

37

32

44

36

34

33

32

30

47

42

52

36

43

20

37

32

44

31

32

38

33

32

30

47

42

52

36

43

20

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Part Number, Char 10

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Rev. 1.32, 2007-03

27

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

90

91

92

93

94

Part Number, Char 18

20

1x

xx

00

20

1x

xx

00

20

1x

xx

00

20

1x

xx

00

Module Revision Code

Test Program Revision Code

Module Manufacturing Date Year

Module Manufacturing Date Week

95 - 98 Module Serial Number

99 - 127 Not used

Rev. 1.32, 2007-03

28

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 18

HYS72D[32/64/128]3x0GBR-7-C

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

0

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

80

08

07

0D

0A

01

48

00

04

70

75

02

82

08

01

0E

04

0C

01

02

26

C1

75

80

08

07

0D

0B

01

48

00

04

70

75

02

82

04

01

0E

04

0C

01

02

26

C1

75

80

08

07

0D

0B

02

48

00

04

70

75

02

82

04

01

0E

04

0C

01

02

26

C1

75

1

2

3

4

5

6

Data Width (LSB)

7

Data Width (MSB)

8

Interface Voltage Levels

9

t_CK@ CL_max(Byte 18) [ns]

10

11

12

13

14

15

16

17

18

19

20

21

22

23

t_ACSDRAM @ CL_max(Byte 18) [ns]

Error Correction Support

Refresh Rate

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

t_CK@ CL_max-0.5 (Byte 18) [ns]

Rev. 1.32, 2007-03

29

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

24

25

26

27

28

29

30

31

32

33

34

35

t_ACSDRAM @ CL_max-0.5 [ns]

75

00

50

3C

50

2D

40

90

50

00

41

4B

30

32

75

00

CB

7F

75

00

50

3C

50

2D

80

90

50

00

41

4B

30

32

75

00

10

14

7F

75

00

50

3C

50

2D

80

90

50

00

41

4B

30

32

75

00

05

7F

t_CK@ CL_max-1 (Byte 18) [ns]

t_ACSDRAM @ CL_max-1 [ns]

t_RPmin[ns]

t_RRDmin[ns]

t_RCDmin[ns]

_RASmin[ns]

t

Module Density per Rank

t_AS,t_CS[ns]

t

_AH,t_CH[ns]

_DS[ns]

t

t_DH[ns]

36 - 40 Not used

41

42

43

44

45

46

47

t_RCmin[ns]

t_RFCmin[ns]

t_CKmax[ns]

t_DQSQmax[ns]

t_QHSmax[ns]

not used

DIMM PCB Height

48 - 61 Not used

62

63

64

65

66

SPD Revision

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Manufacturer’s JEDEC ID Code (2)

Manufacturer’s JEDEC ID Code (3)

Rev. 1.32, 2007-03

30

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

92

Manufacturer’s JEDEC ID Code (4)

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

37

32

44

33

32

33

30

47

42

52

37

43

20

1x

xx

37

32

44

36

34

33

30

47

42

52

37

43

20

0x

xx

37

32

44

31

32

38

33

32

30

47

42

52

37

43

20

1x

xx

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Part Number, Char 10

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Part Number, Char 18

Module Revision Code

Test Program Revision Code

Rev. 1.32, 2007-03

31

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

93

94

Module Manufacturing Date Year

Module Manufacturing Date Week

xx

00

xx

00

xx

00

95 - 98 Module Serial Number

99 - 127 Not used

Rev. 1.32, 2007-03

32

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 19

HYS72D[32/64]3x0HBR-5-C

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

0

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

Data Width (LSB)

80

08

07

0D

0A

01

48

00

04

50

02

82

08

01

0E

04

1C

01

02

26

C1

60

80

08

07

0D

0B

01

48

00

04

50

02

82

04

01

0E

04

1C

01

02

26

C1

60

80

08

07

0D

0A

02

48

00

04

50

02

82

08

01

0E

04

1C

01

02

26

C1

60

1

2

3

4

5

6

7

Data Width (MSB)

8

Interface Voltage Levels

t_CK@ CL_max(Byte 18) [ns]

t_ACSDRAM @ CL_max(Byte 18) [ns]

Error Correction Support

Refresh Rate

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

t_CK@ CL_max-0.5 (Byte 18) [ns]

Rev. 1.32, 2007-03

33

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

24

25

26

27

28

29

30

31

32

33

34

35

t_ACSDRAM @ CL_max-0.5 [ns]

50

75

50

3C

28

3C

28

40

60

40

00

37

41

28

50

00

01

00

10

26

7F

50

75

50

3C

28

3C

28

80

60

40

00

37

41

28

50

00

01

00

10

5F

7F

50

75

50

3C

28

3C

28

40

60

40

00

37

41

28

50

00

01

00

10

27

7F

t_CK@ CL_max-1 (Byte 18) [ns]

t_ACSDRAM @ CL_max-1 [ns]

t_RPmin[ns]

t_RRDmin[ns]

t_RCDmin[ns]

_RASmin[ns]

t

Module Density per Rank

t_AS,t_CS[ns]

t

_AH,t_CH[ns]

_DS[ns]

t

t_DH[ns]

36 - 40 Not used

41

42

43

44

45

46

47

t_RCmin[ns]

t_RFCmin[ns]

t_CKmax[ns]

t_DQSQmax[ns]

t_QHSmax[ns]

not used

DIMM PCB Height

48 - 61 Not used

62

63

64

65

66

67

SPD Revision

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Manufacturer’s JEDEC ID Code (2)

Manufacturer’s JEDEC ID Code (3)

Manufacturer’s JEDEC ID Code (4)

Rev. 1.32, 2007-03

34

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

92

93

94

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

7F

51

00

xx

37

32

44

33

32

33

30

48

42

52

35

43

20

1x

xx

7F

51

00

xx

37

32

44

36

34

33

30

48

42

52

35

43

20

1x

xx

7F

51

00

xx

37

32

44

36

34

33

32

30

48

42

52

35

43

20

1x

xx

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Part Number, Char 10

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Part Number, Char 18

Module Revision Code

Test Program Revision Code

Module Manufacturing Date Year

Module Manufacturing Date Week

Rev. 1.32, 2007-03

35

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

512MB

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×8)

Label Code

PC3200R–30331 PC3200R–30331 PC3200R–30331

JEDEC SPD Revision

Rev. 1.0

HEX

Rev. 1.0

HEX

Rev. 1.0

HEX

Byte#

Description

95 - 98 Module Serial Number

99 - 127 Not used

xx

00

Rev. 1.32, 2007-03

36

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 20

HYS72D[32/64/128]3x0HBR-6-C

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

0

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

80

08

07

0D

0A

01

48

00

04

60

70

02

82

08

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0B

01

48

00

04

60

70

02

82

04

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0A

02

48

00

04

60

70

02

82

08

01

0E

04

0C

01

02

26

C1

80

08

07

0D

0B

02

48

00

04

60

70

02

82

04

01

0E

04

0C

01

02

26

C1

1

2

3

4

5

6

Data Width (LSB)

7

Data Width (MSB)

8

Interface Voltage Levels

9

t_CK@ CL_max(Byte 18) [ns]

10

11

12

13

14

15

16

17

18

19

20

21

22

t_ACSDRAM @ CL_max(Byte 18) [ns]

Error Correction Support

Refresh Rate

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

Rev. 1.32, 2007-03

37

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

23

24

25

26

27

28

29

30

31

32

33

34

35

t_CK@ CL_max-0.5 (Byte 18) [ns]

75

70

00

48

30

48

2A

40

75

45

00

3C

48

30

28

50

00

0F

7F

75

70

00

48

30

48

2A

80

75

45

00

3C

48

30

28

50

00

48

7F

75

70

00

48

30

48

2A

40

75

45

00

3C

48

30

28

50

00

10

7F

75

70

00

48

30

48

2A

80

75

45

00

3C

48

30

28

50

00

49

7F

t

_ACSDRAM @ CL_max-0.5 [ns]

_CK@ CL_max-1 (Byte 18) [ns]

t

t_ACSDRAM @ CL_max-1 [ns]

t_RPmin[ns]

t_RRDmin[ns]

t_RCDmin[ns]

_RASmin[ns]

t

Module Density per Rank

t_AS,t_CS[ns]

t

_AH,t_CH[ns]

_DS[ns]

t

t_DH[ns]

36 - 40 Not used

41

42

43

44

45

46

47

t_RCmin[ns]

t_RFCmin[ns]

t_CKmax[ns]

t_DQSQmax[ns]

t_QHSmax[ns]

not used

DIMM PCB Height

48 - 61 Not used

62

63

64

65

SPD Revision

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Manufacturer’s JEDEC ID Code (2)

Rev. 1.32, 2007-03

38

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

Manufacturer’s JEDEC ID Code (3)

Manufacturer’s JEDEC ID Code (4)

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

37

32

44

33

32

33

30

48

42

52

36

43

20

1x

37

32

44

36

34

33

30

48

42

52

36

43

20

1x

37

32

44

36

34

33

32

30

48

42

52

36

43

20

1x

37

32

44

31

32

38

33

32

30

48

42

52

36

43

20

1x

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Part Number, Char 10

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Part Number, Char 18

Module Revision Code

Rev. 1.32, 2007-03

39

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

512MB

1 GByte

×72

1 Rank (×8) 1 Rank (×4) 2 Ranks (×8) 2 Ranks (×4)

Label Code

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

PC2700R–

25330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Rev. 0.0

HEX

Byte#

Description

92

93

94

Test Program Revision Code

xx

00

xx

00

xx

00

xx

00

Module Manufacturing Date Year

Module Manufacturing Date Week

95 - 98 Module Serial Number

99 - 127 Not used

Rev. 1.32, 2007-03

40

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

TABLE 21

HYS72D[32/64/128]3x0HBR-7-C

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

0

Programmed SPD Bytes in E2PROM

Total number of Bytes in E2PROM

Memory Type (DDR = 07h)

Number of Row Addresses

Number of Column Addresses

Number of DIMM Ranks

80

08

07

0D

0A

01

48

00

04

70

75

02

82

08

01

0E

04

0C

01

02

26

C1

75

80

08

07

0D

0B

01

48

00

04

70

75

02

82

04

01

0E

04

0C

01

02

26

C1

75

80

08

07

0D

0B

02

48

00

04

70

75

02

82

04

01

0E

04

0C

01

02

26

C1

75

1

2

3

4

5

6

Data Width (LSB)

7

Data Width (MSB)

8

Interface Voltage Levels

9

t_CK@ CL_max(Byte 18) [ns]

10

11

12

13

14

15

16

17

18

19

20

21

22

23

t_ACSDRAM @ CL_max(Byte 18) [ns]

Error Correction Support

Refresh Rate

Primary SDRAM Width

Error Checking SDRAM Width

t_CCD[cycles]

Burst Length Supported

Number of Banks on SDRAM Device

CAS Latency

CS Latency

Write Latency

DIMM Attributes

Component Attributes

t_CK@ CL_max-0.5 (Byte 18) [ns]

Rev. 1.32, 2007-03

41

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

24

25

26

27

28

29

30

31

32

33

34

35

t_ACSDRAM @ CL_max-0.5 [ns]

75

00

50

3C

50

2D

40

90

50

00

41

4B

30

32

75

00

CB

7F

75

00

50

3C

50

2D

80

90

50

00

41

4B

30

32

75

00

10

14

7F

75

00

50

3C

50

2D

80

90

50

00

41

4B

30

32

75

00

05

7F

t

_CK@ CL_max-1 (Byte 18) [ns]

_ACSDRAM @ CL_max-1 [ns]

t

t_RPmin[ns]

t

_RRDmin[ns]

_RCDmin[ns]

t

t_RASmin[ns]

Module Density per Rank

t_AS,t_CS[ns]

t_AH,t_CH[ns]

t

_DS[ns]

_DH[ns]

t

36 - 40 Not used

41

42

43

44

45

46

47

t_RCmin[ns]

_RFCmin[ns]

t_CKmax[ns]

t

_DQSQmax[ns]

_QHSmax[ns]

t

not used

DIMM PCB Height

48 - 61 Not used

62

63

64

65

66

SPD Revision

Checksum of Byte 0-62

Manufacturer’s JEDEC ID Code (1)

Manufacturer’s JEDEC ID Code (2)

Manufacturer’s JEDEC ID Code (3)

Rev. 1.32, 2007-03

42

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

67

68

69

70

71

72

73

74

75

76

77

78

79

80

81

82

83

84

85

86

87

88

89

90

91

92

Manufacturer’s JEDEC ID Code (4)

Manufacturer’s JEDEC ID Code (5)

Manufacturer’s JEDEC ID Code (6)

Manufacturer’s JEDEC ID Code (7)

Manufacturer’s JEDEC ID Code (8)

Module Manufacturer Location

Part Number, Char 1

7F

51

00

xx

7F

51

00

xx

7F

51

00

xx

37

32

44

33

32

33

30

48

42

52

37

43

20

1x

xx

37

32

44

36

34

33

30

48

42

52

37

43

20

0x

xx

37

32

44

31

32

38

33

32

30

48

42

52

37

43

20

1x

xx

Part Number, Char 2

Part Number, Char 3

Part Number, Char 4

Part Number, Char 5

Part Number, Char 6

Part Number, Char 7

Part Number, Char 8

Part Number, Char 9

Part Number, Char 10

Part Number, Char 11

Part Number, Char 12

Part Number, Char 13

Part Number, Char 14

Part Number, Char 15

Part Number, Char 16

Part Number, Char 17

Part Number, Char 18

Module Revision Code

Test Program Revision Code

Rev. 1.32, 2007-03

43

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Product Type

Organization

256MB

×72

512MB

×72

1 GByte

×72

1 Rank (×8)

1 Rank (×4)

2 Ranks (×4)

Label Code

PC2100R–20330 PC2100R–20331 PC2100R–20330

JEDEC SPD Revision

Rev. 0.0

HEX

Rev. 1.0

HEX

Rev. 0.0

HEX

Byte#

Description

93

94

Module Manufacturing Date Year

Module Manufacturing Date Week

xx

00

xx

00

xx

00

95 - 98 Module Serial Number

99 - 127 Not used

Rev. 1.32, 2007-03

44

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

5

Package Outlines

This chapter contains the package outlines of the products.

5.1

Raw Card A

FIGURE 2

Package Outlines – Raw Card A HYS72D32300[G/H]BR–[5/6/7]–C (1 Rank × 8)

133.35

0.15 A B C

128.95

2.64 MAX.

A

1

2.5

92

6.62

2.175

B

C

0.1

ø0.1 A B C

64.77

0.4

6.35

0.1

1.27

49.53

95 x 1.27 = 120.65

0.1

1.8

0.1 A B C

93

184

3 MIN.

Detail of contacts

1.27

0.05

1

0.1 A B C

Burr max. 0.4 allowed

Rev. 1.32, 2007-03

45

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

5.2

Raw Card B

FIGURE 3

Package Outlines – Raw Card B HYS72D64320GBR–[5/6]–C (2 Ranks ×8)

133.35

0.15 A B C

128.95

4 MAX.

A

1

2.5

92

6.62

2.175

B

C

0.1

ø0.1 A B C

64.77

0.4

6.35

0.1

1.27

49.53

95 x 1.27 = 120.65

0.1

1.8

0.1 A B C

93

184

3 MIN.

Detail of contacts

1.27

0.05

1

0.1 A B C

Burr max. 0.4 allowed

Rev. 1.32, 2007-03

46

03292006-Q22P-G7TH

ꢂꢃꢃꢍꢃꢄꢁ

ꢀꢍ

ꢂꢄꢁ

ꢂꢇꢋ

ꢍꢆꢄꢁ

ꢈꢁ0 ;ꢍꢁ

$

ꢆꢇꢁ

ꢊꢍ

ꢊꢇ

ꢁ

ꢀꢍꢂꢁ

ꢁ

¡ꢀꢍꢂꢁ$ꢁ %ꢁ&ꢁ

ꢇꢍꢂꢅꢄꢁ

ꢇꢅꢁ

ꢀꢍꢂꢁ

ꢊꢍꢃꢄ

ꢁ

ꢂꢍ

ꢊꢈꢍ

ꢅꢅ

ꢁ

ꢈꢆꢍ

ꢄꢃꢁ

ꢆꢄ

ꢁ[ꢁ ꢂꢍ

ꢇꢅ

ꢁ ꢁ ꢂꢇꢀꢍ

ꢊꢄꢁ

ꢀꢍꢂꢁ

ꢂꢍꢋꢁ

ꢀꢍꢂꢁ

$ꢁ %ꢁ&ꢁ

ꢆꢃ

ꢁ

ꢂ

ꢋꢈꢁ

ꢃꢁ0

,1ꢍꢁ

'

HWDL

RIꢁ

FRQ

W

DFWVꢁ

Oꢁ

ꢂꢍ

PD

ꢇꢅ

ꢁ

ꢂꢁ

ꢀꢍ

ꢀꢄꢁ

ꢀꢍꢂꢁ

$ꢁ %ꢁ &ꢁ

%XU

[

ꢍꢁꢀꢍꢈ

ꢁ

DO

Uꢁ

O

RZHGꢁ

*/'

ꢀꢆꢄ

ꢋꢀꢁ

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

5.3

Raw Card C

FIGURE 4

Package Outlines – Raw Card C HYS72D64300[G/H]BR–[5/6/7]–C (1 Rank × 4)

$ꢁ %ꢁ&ꢁ

$ꢁ

ꢂꢁ

ꢇꢍꢄ

%ꢁ &ꢁ

Rev. 1.32, 2007-03

03292006-Q22P-G7TH

47

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

5.4

Raw Card D

FIGURE 5

Package Outlines – Raw Card D HYS72D128320[G/H]BR–[6/7]–C (2 Ranks ×4)

133.35

0.15 A B C

128.95

4 MAX.

A

1

2.5

92

6.62

2.175

B

C

0.1

ø0.1 A B C

0.4

6.35

0.1

1.27

64.77

49.53

95 x 1.27 = 120.65

0.1

1.8

0.1 A B C

93

184

3 MIN.

Detail of contacts

1.27

0.05

1

0.1 A B C

Burr max. 0.4 allowed

Rev. 1.32, 2007-03

48

03292006-Q22P-G7TH

Internet Data Sheet

HYS72D[128/64/32]3xx[G/H]BR–[5/6/7]–C

Registered Double Data Rate SDRAM

Table of Contents

1

1.1

1.2

Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2

Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Current Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Current Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

3.1

3.2

3.3

3.4

4

SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

5

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Raw Card A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45

Raw Card B . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

Raw Card C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

Raw Card D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48

5.1

5.2

5.3

5.4

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49

Rev. 1.32, 2007-03

49

03292006-Q22P-G7TH

Internet Data Sheet

Edition 2007-03

Published by Qimonda AG

Gustav-Heinemann-Ring 212

D-81739 München, Germany

Legal Disclaimer

The information given in this Internet Data Sheet shall in no event be regarded as a guarantee of conditions or characteristics

(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Qimonda hereby disclaims any and all warranties and liabilities of any kind,

including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Qimonda Office.

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please

contact your nearest Qimonda Office.

Qimonda Components may only be used in life-support devices or systems with the express written approval of Qimonda, if a

failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect

the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human

body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

www.qimonda.com

厂商	型号	描述	页数
INFINEON	HYS64-72V2200GU-8	3.3V 2M ×64 /72- 1位BANK SDRAM模块3.3V 4M ×64 /72- 2位BANK SDRAM模块[ 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module ]	17 页
INFINEON	HYS64-74V8200GU	3.3 V 8M ×64 /72- 1位银行SDRAM模块3.3 V 16M ×64 /72- 2位银行SDRAM模块[ 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module ]	17 页
INFINEON	HYS6472V16200GU	3.3 V 16M ×64 /72-位SDRAM模块3.3 V 32M ×64 /72-位SDRAM模块3.3 V 64M ×64 /72-位SDRAM模块[ 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules ]	17 页
INFINEON	HYS6472V4200GU	3.3V 4M ×64 /72- 1位BANK SDRAM模块3.3V 8M ×64 /72- 2位BANK SDRAM模块[ 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module ]	15 页
INFINEON	HYS64D128020GBDL-6-A	[ DDR DRAM Module, 128MX64, 0.7ns, CMOS, SO-DIMM-200 ]	11 页
ETC	HYS64D128020GBDL-7-A	？ 1GB （ 1024Mx64 ） PC2100 2银行？\n[ ?1GB (1024Mx64) PC2100 2-bank? ]	11 页
INFINEON	HYS64D128020GU-7-A	2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ]	18 页
INFINEON	HYS64D128020GU-8-A	2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ]	18 页
QIMONDA	HYS64D128020GU-8-A	[ DDR DRAM Module, 128MX64, 0.8ns, CMOS, PDMA184 ]	18 页
INFINEON	HYS64D128021	200针的小型双列直插式内存模块[ 200-Pin Small Outline Dual-In-Line Memory Modules ]	23 页