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HYS64T128020EDL

型号:

HYS64T128020EDL

描述:

200引脚小轮廓DDR2 SDRAM模块[ 200-Pin Small-Outlined DDR2 SDRAM Modules ]

品牌:

QIMONDA[ QIMONDA AG ]

页数:

43 页

PDF大小:

2599 K

October 2007  
HYS64T128020EDL–[2.5/3S/3.7]–B  
200-Pin Small-Outlined DDR2 SDRAM Modules  
DDR2 SDRAM  
SO-DIMM SDRAM  
RoHS Compliant  
Internet Data Sheet  
Rev. 1.12  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Revision History: 2007-10, Rev. 1.12  
Page  
Subjects (major changes since last revision)  
Editorial change and adapted to internet edition  
6-11  
Previous Revision: 2007-05, Rev. 1.11  
All Editorial change  
Previous Revision: 2007-05, Rev. 1.1  
All  
Added Product Types HYS64T128020EDL-2.5-B and HYS64T128020EDL-3S-B  
Previous Revision: 2006-10, Rev. 1.0  
21  
Previous Revision: 2006-09, Rev. 0.51  
All Qimonda update  
Previous Revision: 2006-04, Rev. 0.5  
Added IDD currents  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
techdoc@qimonda.com  
qag_techdoc_rev411 / 3.31 QAG / 2007-01-22  
10312006-I253-V1V0  
2
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
1
Overview  
This chapter gives an overview of the 200-pin small-outline DDR2 SDRAM modules product family and describes its main  
characteristics.  
1.1  
Features  
200-Pin PC2-6400, PC2-5300 and PC2-4200 DDR2  
SDRAM memory modules.  
128Mx64 module organization, and 64Mx16 chip  
organization  
1GB Modules built with 1 Gbit DDR2 SDRAMs in PG-  
TFBGA-84-11 chipsize packages  
Standard Double-Data-Rate-Two Synchronous DRAMs  
(DDR2 SDRAM) with a single + 1.8 V (± 0.1 V) power  
supply  
All speed grades faster than DDR2-400 comply with  
DDR2-400 timing specifications.  
Programmable CAS Latencies (3, 4, 5 ), Burst Length (8 &  
4).  
Auto Refresh (CBR) and Self Refresh  
Auto Refresh for temperatures above 85 °C tREFI = 3.9 µs.  
Programmable self refresh rate via EMRS2 setting.  
Programmable partial array refresh via EMRS2 settings.  
DCC enabling via EMRS2 setting.  
All inputs and outputs SSTL_1.8 compatible  
Off-Chip Driver Impedance Adjustment (OCD) and On-Die  
Termination (ODT)  
Serial Presence Detect with E2PROM  
SO-DIMM Dimensions (nominal): 50 mm42 mm30 mm  
high, 67.6 mm wide  
Based on standard reference layouts Raw Cards 'A'  
RoHS compliant products1)  
TABLE 1  
Performance Table  
QAG Speed Code  
–2.5  
–3  
–3.7  
Unit  
DRAM Speed Grade  
Module Speed Grade  
DDR2  
PC2  
–800E  
–6400E  
6–6–6  
–667C  
–5300C  
4–4–4  
–533C  
–4200C  
4–4–4  
CAS-RCD-RP latencies  
tCK  
Max. Clock Frequency  
CL3  
CL4  
CL5  
CL6  
fCK3  
fCK4  
fCK5  
fCK6  
tRCD  
tRP  
200  
266  
333  
400  
15  
200  
333  
333  
200  
266  
266  
MHz  
MHz  
MHz  
MHz  
ns  
Min. RAS-CAS-Delay  
Min. Row Precharge Time  
Min. Row Active Time  
Min. Row Cycle Time  
12  
15  
15  
12  
15  
ns  
tRAS  
tRC  
45  
45  
45  
ns  
60  
57  
60  
ns  
1) RoHS Compliant Product: Restriction of the use of certain hazardous substances (RoHS) in electrical and electronic equipment as defined  
in the directive 2002/95/EC issued by the European Parliament and of the Council of 27 January 2003. These substances include mercury,  
lead, cadmium, hexavalent chromium, polybrominated biphenyls and polybrominated biphenyl ethers.  
Rev. 1.12, 2007-10  
3
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
1.2  
Description  
The Qimonda HYS64T128020EDL–[2.5/3S/3.7]–B module  
family are small-outline DIMM modules “SO-DIMMs” with 50  
mm42 mm30 mm height based on DDR2 technology. DIMMs  
are available as non-ECC modules in128M × 64 (1GB) in  
organization and density, intended for mounting into 200-pin  
connector sockets.  
The memory array is designed with 1 Gbit Double-Data-Rate-  
Two (DDR2) Synchronous DRAMs. Decoupling capacitors  
are mounted on the PCB board. The DIMMs feature serial  
presence detect based on a serial E2PROM device using the  
2-pin I2C protocol. The first 128 bytes are programmed with  
configuration data and are write protected; the second  
128 bytes are available to the customer.  
TABLE 2  
Ordering Information for RoHS Compliant Products  
Product Type1)  
PC2-6400-666  
Compliance Code2)  
Description  
SDRAM Technology  
HYS64T128020EDL–2.5–B 1GB 2R×16 PC2–6400S–666–12–A0  
PC2-5300-555  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
2 Ranks, Non-ECC  
1Gbit (×16)  
1Gbit (×16)  
1Gbit (×16)  
HYS64T128020EDL–3S–B 1GB 2R×16 PC2–5300S–555–12–A0  
PC2-4200-444  
HYS64T128020EDL–3.7–B 1GB 2R×16 PC2–4200S–444–12–A0  
1) For detailed information regarding Product Type of Qimonda please see chapter "Product Type Nomenclature" of this datasheet.  
2) The Compliance Code is printed on the module label and describes the speed grade, for example "PC2–6400S–666–12–A0" where 6400S  
means Small-Outline DIMM modules with 6.40 GB/sec Module Bandwidth and "666–12" means Column Address Strobe (CAS) latency  
=6, Row Column Delay (RCD) latency = 6 and Row Precharge (RP) latency = 6 using the latest JEDEC SPD Revision 1.2 and produced  
on the Raw Card "A".  
TABLE 3  
Address Format  
DIMM  
Density  
Module  
Organization  
Memory  
Ranks  
ECC/  
Non-ECC  
# of SDRAMs # of row/bank/column  
bits  
Raw  
Card  
1GB  
128M × 64  
2
Non-ECC  
8
13/3/10  
A
TABLE 4  
Components on Modules  
DRAM Organisation  
64M x 16  
Product Type1)2)  
DRAM Components1)  
DRAM Density  
1Gbit  
HYS64T128020EDL  
1) Green Product  
HYB18T1G160BF  
2) For a detailed description of all functionalities of the DRAM components on these modules see the component data sheet.  
Rev. 1.12, 2007-10  
4
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
2
Pin Configurations and Block Diagrams  
2.1  
Pin Configurations  
The pin configuration of the Small Outline DDR2 SDRAM DIMM is listed by function in Table 5 (200 pins). The abbreviations  
used in columns Pin Type and Buffer Type are explained in Table 6 and Table 7 respectively. The Pin numbering is depicted  
in Figure 1  
TABLE 5  
Pin Configuration of SO-DIMM  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
Clock Signals  
30  
CK0  
CK1  
CK0  
CK1  
I
I
I
I
SSTL  
SSTL  
SSTL  
SSTL  
Clock Signals 1:0, Complement Clock Signals 1:0  
The system clock inputs. All address and command lines  
are sampled on the cross point of the rising edge of CK and  
the falling edge of CK. A Delay Locked Loop (DLL) circuit is  
driven from the clock inputs and output timing for read  
operations is synchronized to the input clock.  
164  
32  
166  
79  
80  
CKE0  
CKE1  
I
I
SSTL  
SSTL  
Clock Enable Rank 1:0  
Activates the DDR2 SDRAM CK signal when HIGH and  
deactivates the CK signal when LOW. By deactivating the  
clocks, CKE LOW initiates the Power Down Mode or the  
Self Refresh Mode.  
Note: 2 Ranks module  
Not Connected  
NC  
NC  
Note: 1-rank module  
Control Signals  
110  
115  
S0  
S1  
I
I
SSTL  
SSTL  
Chip Select Rank 1:0  
Enables the associated DDR2 SDRAM command decoder  
when LOW and disables the command decoder when  
HIGH. When the command decoder is disabled, new  
commands are ignored but previous operations continue.  
Rank 0 is selected by S0; Rank 1 is selected by S1. Ranks  
are also called "Physical banks".2 Ranks module  
NC  
NC  
I
Not Connected  
Note: 1-rank module  
108  
113  
RAS  
SSTL  
Row Address Strobe  
When sampled at the cross point of the rising edge of CK,  
and falling edge of CK, RAS, CAS and WE define the  
operation to be executed by the SDRAM.  
CAS  
I
SSTL  
Column Address Strobe  
Rev. 1.12, 2007-10  
5
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
109  
WE  
I
SSTL  
Write Enable  
Address Signals  
107  
106  
BA0  
BA1  
I
I
SSTL  
SSTL  
Bank Address Bus 2:0  
Selects which DDR2 SDRAM internal bank of four or eight  
is activated.  
85  
BA2  
I
SSTL  
Bank Address Bus 2  
Greater than 512Mb DDR2 SDRAMS  
NC  
A0  
NC  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Less than 1Gb DDR2 SDRAMS  
102  
101  
100  
99  
I
I
I
I
I
I
I
I
I
I
I
I
I
I
Address Bus 12:0  
During a Bank Activate command cycle, defines the row  
address when sampled at the cross-point of the rising edge  
of CK and falling edge of CK. During a Read or Write  
command cycle, defines the column address when sampled  
at the cross point of the rising edge of CK and falling edge  
of CK. In addition to the column address, AP is used to  
invoke autoprecharge operation at the end of the burst read  
or write cycle. If AP is HIGH, autoprecharge is selected and  
BA0-BAn defines the bank to be precharged. If AP is LOW,  
autoprecharge is disabled. During a Precharge command  
cycle, AP is used in conjunction with BA0-BAn to control  
which bank(s) to precharge. If AP is HIGH, all banks will be  
precharged regardless of the state of BA0-BAn inputs. If AP  
is LOW, then BA0-BAn are used to define which bank to  
precharge.  
A1  
A2  
A3  
98  
A4  
97  
A5  
94  
A6  
92  
A7  
93  
A8  
91  
A9  
105  
A10  
AP  
A11  
A12  
90  
89  
Address Signal 12  
Note: Module based on 256 Mbit or larger dies  
Address Signal 13  
116  
A13  
NC  
I
SSTL  
Note: 1 Gbit based module  
Not Connected  
NC  
I
Note: Module based on 512 Mbit or smaller dies  
Address Signal 14  
86  
A14  
NC  
SSTL  
Note: 2 Gbit based module  
Not Connected  
NC  
Note: Module based on 1 Gbit or smaller dies  
Data Signals  
5
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
DQ8  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
Note: Data Input / Output pins  
7
17  
19  
4
6
14  
16  
23  
Rev. 1.12, 2007-10  
6
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
25  
DQ9  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
Note: Data Input / Output pins  
35  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
DQ48  
37  
20  
22  
36  
38  
43  
45  
55  
57  
44  
46  
56  
58  
61  
63  
73  
75  
62  
64  
74  
76  
123  
125  
135  
137  
124  
126  
134  
136  
141  
143  
151  
153  
140  
142  
152  
154  
157  
Rev. 1.12, 2007-10  
7
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
159  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Bus 63:0  
Note: Data Input / Output pins  
173  
175  
158  
160  
174  
176  
179  
181  
189  
191  
180  
182  
192  
194  
Data Strobe Signals  
13  
DQS0  
DQS0  
DQS1  
DQS1  
DQS2  
DQS2  
DQS3  
DQS3  
DQS4  
DQS4  
DQS5  
DQS5  
DQS6  
DQS6  
DQS7  
DQS7  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
I/O  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Strobe Bus 7:0  
The data strobes, associated with one data byte, sourced  
with data transfers. In Write mode, the data strobe is  
sourced by the controller and is centered in the data  
window. In Read mode the data strobe is sourced by the  
DDR2 SDRAM and is sent at the leading edge of the data  
window. DQS signals are complements, and timing is  
relative to the cross-point of respective DQS and DQS. If the  
module is to be operated in single ended strobe mode, all  
DQS signals must be tied on the system board to VSS and  
DDR2 SDRAM mode registers programmed appropriately.  
11  
31  
29  
51  
49  
70  
68  
131  
129  
148  
146  
169  
167  
188  
186  
Data Mask Signals  
Rev. 1.12, 2007-10  
8
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
10  
DM0  
DM1  
DM2  
DM3  
DM4  
DM5  
DM6  
DM7  
I
I
I
I
I
I
I
I
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
SSTL  
Data Mask Bus 7:0  
The data write masks, associated with one data byte. In  
Write mode, DM operates as a byte mask by allowing input  
data to be written if it is LOW but blocks the write operation  
if it is HIGH. In Read mode, DM lines have no effect.  
26  
52  
67  
130  
147  
170  
185  
EEPROM  
197  
SCL  
SDA  
I
CMOS Serial Bus Clock  
This signal is used to clock data into and out of the SPD  
EEPROM and Thermal sensor.  
195  
I/O  
OD  
Serial Bus Data  
This is a bidirectional pin use to transfer data into and out of  
the SPD EEPROM and Thermal sensor. A resistor must be  
connected from SDA to VDDSPD on the motherboard to act as  
a pull-up.  
198  
200  
SA0  
SA1  
I
I
CMOS Serial Address Select Bus 2:0  
Address pins used to select the SPD and Thermal sensor  
CMOS  
base address.  
50  
EVENT  
O
OD  
-
EVENT  
The optional EVENT pin is reserved for use to flag critical  
module temperature and is used in conjunction with  
Thermal Sensor.  
NC  
-
Not Connected  
Not connected on modules without temperature sensors.  
Power Supplies  
1
VREF  
AI  
I/O Reference Voltage  
Reference voltage for the SSTL-18 inputs.  
199  
VDDSPD PWR  
EEPROM Power Supply  
Power supplies for Serial Presence Detect, Thermal Sensor  
and ground for the module.  
81,82,87,88,95,96,103,104,  
111,112,117,118  
VDD  
VSS  
PWR  
GND  
Power Supply  
Power supplies for core, I/O and ground for the module.  
2,3,8,9,12,15,18,21,24,27,28,  
33,34,39,40,41,42,47,48,53,  
54,59,60,65,66,71,72,77,78,  
121,122,127,128,132,133,138,13  
9,144,145,149,150,155,156,  
161,162,165,168, 171,172,177,  
178,183,184,187,190,193,196  
Ground Plane  
Power supplies for core, I/O, Serial Presence Detect,  
Thermal Sensor and ground for the module.  
Other pins  
114  
ODT0  
I
SSTL  
On-Die Termination Control 1:0  
Rev. 1.12, 2007-10  
9
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Pin No.  
Name  
Pin  
Buffer  
Function  
Type Type  
119  
ODT1  
I
SSTL  
On-Die Termination Control 1  
Asserts on-die termination for DQ, DM, DQS, and DQS  
signals if enabled via the DDR2 SDRAM mode register.  
Note: 2 Rank modules  
Not Connected  
NC  
NC  
NC  
NC  
Note: 1 Rank modules  
69,83,84,120,163  
Not connected  
Pins not connected on Qimonda SO-DIMMs  
TABLE 6  
Abbreviations for pin Type  
Abbreviation  
Description  
I
Standard input-only pin. Digital levels.  
Output. Digital levels.  
I/O is a bidirectional input/output signal.  
Input. Analog levels.  
Power  
O
I/O  
AI  
PWR  
GND  
NC  
Ground  
Not Connected  
TABLE 7  
Abbreviations for Buffer Type  
Abbreviation  
Description  
SSTL  
Serial Stub Terminated Logic (SSTL_18)  
Low Voltage CMOS  
LV-CMOS  
CMOS  
OD  
CMOS Levels  
Open Drain. The corresponding pin has 2 operational states, active low and tri-state, and  
allows multiple devices to share as a wire-OR.  
Rev. 1.12, 2007-10  
10  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
FIGURE 1  
Pin Configuration SO-DIMM (200 pin)  
6
2%& ꢇ 0IN ꢀꢀꢁ  
0IN ꢀꢀꢃ ꢇ  
0IN ꢀꢀꢄ ꢇ  
0IN ꢀꢁꢀ ꢇ  
0IN ꢀꢁꢂ ꢇ  
0IN ꢀꢁꢅ ꢇ  
0IN ꢀꢃꢃ ꢇ  
0IN ꢀꢃꢄ ꢇ  
0IN ꢀꢆꢀ ꢇ  
0IN ꢀꢆꢂ ꢇ  
0IN ꢀꢆꢅ ꢇ  
633  
633  
ꢇ 0IN ꢀꢀꢆ  
0IN ꢀꢀꢂ ꢇ  
$1ꢂ  
$1ꢀ ꢇ 0IN ꢀꢀꢈ  
633 ꢇ 0IN ꢀꢀꢊ  
$1ꢈ  
$-ꢀ  
$1ꢄ  
633  
$1ꢁ ꢇ 0IN ꢀꢀꢉ  
0IN ꢀꢀꢅ ꢇ 633  
0IN ꢀꢁꢃ ꢇ 633  
0IN ꢀꢁꢄ ꢇ $1ꢉ  
0IN ꢀꢃꢀ ꢇ $1ꢁꢃ  
0IN ꢀꢃꢂ ꢇ 633  
0IN ꢀꢃꢅ ꢇ 633  
0IN ꢀꢆꢃ ꢇ #+ꢀ  
0IN ꢀꢆꢄ ꢇ $1ꢁꢂ  
0IN ꢀꢂꢀ ꢇ 633  
$13ꢀ ꢇ 0IN ꢀꢁꢁ  
$13ꢀ ꢇ 0IN ꢀꢁꢆ  
$1ꢃ ꢇ 0IN ꢀꢁꢉ  
633 ꢇ 0IN ꢀꢃꢁ  
6
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$1ꢆ ꢇ 0IN ꢀꢁꢊ  
$1ꢅ ꢇ 0IN ꢀꢃꢆ  
$1ꢁꢆ  
$-ꢁ  
#+ꢀ  
633  
$1ꢊ ꢇ 0IN ꢀꢃꢈ  
$13ꢁ ꢇ 0IN ꢀꢃꢊ  
633 ꢇ 0IN ꢀꢆꢆ  
6
33 ꢇ 0IN ꢀꢃꢉ  
$13ꢁ ꢇ 0IN ꢀꢆꢁ  
$1ꢁꢀ ꢇ 0IN ꢀꢆꢈ  
633 ꢇ 0IN ꢀꢆꢊ  
$1ꢁꢁ ꢇ 0IN ꢀꢆꢉ  
$1ꢁꢈ  
6
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0IN ꢀꢂꢃ ꢇ 633  
0IN ꢀꢂꢄ ꢇ $1ꢃꢁ  
0IN ꢀꢈꢀ ꢇ .#ꢋ%6%.4  
0IN ꢀꢈꢂ ꢇ 633  
0IN ꢀꢈꢅ ꢇ $1ꢃꢆ  
0IN ꢀꢄꢃ ꢇ $1ꢃꢅ  
0IN ꢀꢄꢄ ꢇ 633  
0IN ꢀꢉꢀ ꢇ $13ꢆ  
0IN ꢀꢉꢂ ꢇ $1ꢆꢀ  
0IN ꢀꢉꢅ ꢇ 633  
0IN ꢀꢅꢃ ꢇ 6$$  
0IN ꢀꢅꢄ ꢇ .#ꢋ!ꢁꢂ  
0IN ꢀꢊꢀ ꢇ !ꢁꢁ  
0IN ꢀꢊꢂ ꢇ !ꢄ  
&
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0IN ꢀꢂꢂ ꢇ $1ꢃꢀ  
0IN ꢀꢂꢅ ꢇ 633  
0IN ꢀꢈꢃ ꢇ $-ꢃ  
0IN ꢀꢈꢄ ꢇ $1ꢃꢃ  
0IN ꢀꢄꢀ ꢇ 633  
0IN ꢀꢄꢂ ꢇ $1ꢃꢊ  
0IN ꢀꢄꢅ ꢇ $13ꢆ  
0IN ꢀꢉꢃ ꢇ 633  
0IN ꢀꢉꢄ ꢇ $1ꢆꢁ  
0IN ꢀꢅꢀ ꢇ .#ꢋ#+%ꢁ  
0IN ꢀꢅꢂ ꢇ .#  
$1ꢁꢉ ꢇ 0IN ꢀꢂꢈ  
$13ꢃ ꢇ 0IN ꢀꢂꢊ  
633 ꢇ 0IN ꢀꢈꢆ  
$1ꢁꢊ ꢇ 0IN ꢀꢈꢉ  
$1ꢃꢂ ꢇ 0IN ꢀꢄꢁ  
633 ꢇ 0IN ꢀꢄꢈ  
.# ꢇ 0IN ꢀꢄꢊ  
"
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+
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6
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$13ꢃ ꢇ 0IN ꢀꢈꢁ  
$1ꢁꢅ ꢇ 0IN ꢀꢈꢈ  
633 ꢇ 0IN ꢀꢈꢊ  
$1ꢃꢈ ꢇ 0IN ꢀꢄꢆ  
$-ꢆ ꢇ 0IN ꢀꢄꢉ  
633 ꢇ 0IN ꢀꢉꢁ  
$
%
$
%
$1ꢃꢄ ꢇ 0IN ꢀꢉꢆ  
633 ꢇ 0IN ꢀꢉꢉ  
6$$ ꢇ 0IN ꢀꢅꢁ  
.#ꢋ"!ꢃ ꢇ 0IN ꢀꢅꢈ  
!ꢁꢃ ꢇ 0IN ꢀꢅꢊ  
!ꢅ ꢇ 0IN ꢀꢊꢆ  
$1ꢃꢉ ꢇ 0IN ꢀꢉꢈ  
#+%ꢀ ꢇ 0IN ꢀꢉꢊ  
.# ꢇ 0IN ꢀꢅꢆ  
6$$ ꢇ 0IN ꢀꢅꢉ  
0IN ꢀꢅꢅ ꢇ 6$$  
0IN ꢀꢊꢃ ꢇ !ꢉ  
0IN ꢀꢊꢄ ꢇ 6$$  
0IN ꢁꢀꢀ ꢇ !ꢃ  
!ꢊ ꢇ 0IN ꢀꢊꢁ  
6$$ ꢇ 0IN ꢀꢊꢈ  
!ꢈ ꢇ 0IN ꢀꢊꢉ  
0IN ꢀꢊꢅ ꢇ !ꢂ  
!ꢆ ꢇ 0IN ꢀꢊꢊ  
!ꢁ ꢇ 0IN ꢁꢀꢁ  
0IN ꢁꢀꢃ ꢇ !ꢀ  
6$$ ꢇ 0IN ꢁꢀꢆ  
0IN ꢁꢀꢂ ꢇ 6$$  
0IN ꢁꢀꢅ ꢇ 2!3  
0IN ꢁꢁꢃ ꢇ 6$$  
0IN ꢁꢁꢄ ꢇ .#ꢋ!ꢁꢆ  
0IN ꢁꢃꢀ ꢇ .#  
!ꢁꢀꢋ!0 ꢇ 0IN ꢁꢀꢈ  
7% ꢇ 0IN ꢁꢀꢊ  
#!3 ꢇ 0IN ꢁꢁꢆ  
6$$ ꢇ 0IN ꢁꢁꢉ  
633 ꢇ 0IN ꢁꢃꢁ  
$1ꢆꢆ ꢇ 0IN ꢁꢃꢈ  
$13ꢂ ꢇ 0IN ꢁꢃꢊ  
633 ꢇ 0IN ꢁꢆꢆ  
$1ꢆꢈ ꢇ 0IN ꢁꢆꢉ  
$1ꢂꢀ ꢇ 0IN ꢁꢂꢁ  
633 ꢇ 0IN ꢁꢂꢈ  
633 ꢇ 0IN ꢁꢂꢊ  
$1ꢂꢆ ꢇ 0IN ꢁꢈꢆ  
$1ꢂꢅ ꢇ 0IN ꢁꢈꢉ  
633 ꢇ 0IN ꢁꢄꢁ  
633 ꢇ 0IN ꢁꢄꢈ  
0IN ꢁꢀꢄ ꢇ "!ꢁ  
0IN ꢁꢁꢀ ꢇ 3ꢀ  
"!ꢀ ꢇ 0IN ꢁꢀꢉ  
6$$ ꢇ 0IN ꢁꢁꢁ  
0IN ꢁꢁꢂ ꢇ /$4ꢀ  
0IN ꢁꢁꢅ ꢇ 6$$  
0IN ꢁꢃꢃ ꢇ 633  
0IN ꢁꢃꢄ ꢇ $1ꢆꢉ  
0IN ꢁꢆꢀ ꢇ $-ꢂ  
0IN ꢁꢆꢂ ꢇ $1ꢆꢅ  
0IN ꢁꢆꢅ ꢇ 633  
0IN ꢁꢂꢃ ꢇ $1ꢂꢈ  
0IN ꢁꢂꢄ ꢇ $13ꢈ  
0IN ꢁꢈꢀ ꢇ 633  
0IN ꢁꢈꢂ ꢇ $1ꢂꢉ  
0IN ꢁꢈꢅ ꢇ $1ꢈꢃ  
0IN ꢁꢄꢃ ꢇ 633  
0IN ꢁꢄꢄ ꢇ #+ꢁ  
.#ꢋ3ꢁ ꢇ 0IN ꢁꢁꢈ  
.#ꢋ/$4ꢁ ꢇ 0IN ꢁꢁꢊ  
$1ꢆꢃ ꢇ 0IN ꢁꢃꢆ  
633 ꢇ 0IN ꢁꢃꢉ  
0IN ꢁꢃꢂ ꢇ $1ꢆꢄ  
0IN ꢁꢃꢅ ꢇ 633  
0IN ꢁꢆꢃ ꢇ 633  
0IN ꢁꢆꢄ ꢇ $1ꢆꢊ  
0IN ꢁꢂꢀ ꢇ $1ꢂꢂ  
0IN ꢁꢂꢂ ꢇ 633  
0IN ꢁꢂꢅ ꢇ $13ꢈ  
0IN ꢁꢈꢃ ꢇ $1ꢂꢄ  
0IN ꢁꢈꢄ ꢇ 633  
0IN ꢁꢄꢀ ꢇ $1ꢈꢆ  
0IN ꢁꢄꢂ ꢇ #+ꢁ  
0IN ꢁꢄꢅ ꢇ 633  
0IN ꢁꢉꢃ ꢇ 633  
0IN ꢁꢉꢄ ꢇ $1ꢈꢈ  
0IN ꢁꢅꢀ ꢇ $1ꢄꢀ  
0IN ꢁꢅꢂ ꢇ 633  
0IN ꢁꢅꢅ ꢇ $13ꢉ  
0IN ꢁꢊꢃ ꢇ $1ꢄꢃ  
0IN ꢁꢊꢄ ꢇ 633  
0IN ꢃꢀꢀ ꢇ 3!ꢁ  
$13ꢂ ꢇ 0IN ꢁꢆꢁ  
$1ꢆꢂ ꢇ 0IN ꢁꢆꢈ  
633 ꢇ 0IN ꢁꢆꢊ  
$1ꢂꢁ ꢇ 0IN ꢁꢂꢆ  
$-ꢈ ꢇ 0IN ꢁꢂꢉ  
$1ꢂꢃ ꢇ 0IN ꢁꢈꢁ  
633 ꢇ 0IN ꢁꢈꢈ  
$1ꢂꢊ ꢇ 0IN ꢁꢈꢊ  
.# ꢇ 0IN ꢁꢄꢆ  
$13ꢄ ꢇ 0IN ꢁꢄꢉ  
633 ꢇ 0IN ꢁꢉꢁ  
0IN ꢁꢄꢊ  
0IN ꢁꢉꢀ  
ꢇ $-ꢄ  
$13ꢄ ꢇ  
$1ꢈꢀ ꢇ 0IN ꢁꢉꢆ  
633 ꢇ 0IN ꢁꢉꢉ  
0IN ꢁꢉꢂ ꢇ $1ꢈꢂ  
0IN ꢁꢉꢅ ꢇ 633  
$1ꢈꢁ ꢇ 0IN ꢁꢉꢈ  
$1ꢈꢄ ꢇ 0IN ꢁꢉꢊ  
633 ꢇ 0IN ꢁꢅꢆ  
$1ꢈꢉ ꢇ 0IN ꢁꢅꢁ  
$-ꢉ ꢇ 0IN ꢁꢅꢈ  
0IN ꢁꢅꢃ ꢇ $1ꢄꢁ  
0IN ꢁꢅꢄ ꢇ $13ꢉ  
633 ꢇ 0IN ꢁꢅꢉ  
0IN ꢁꢅꢊ  
0IN ꢁꢊꢀ  
$1ꢈꢅ ꢇ  
633 ꢇ 0IN ꢁꢊꢆ  
0IN ꢁꢊꢉ  
ꢇ 633  
0IN ꢁꢊꢂ ꢇ $1ꢄꢆ  
0IN ꢁꢊꢅ  
$1ꢈꢊ ꢇ 0IN ꢁꢊꢁ  
3$! ꢇ 0IN ꢁꢊꢈ  
6$$30$ ꢇ 0IN ꢁꢊꢊ  
3#, ꢇ  
ꢇ 3!ꢀ  
-004ꢀꢁꢂꢀ  
Rev. 1.12, 2007-10  
11  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
3
Electrical Characteristics  
3.1  
Absolute Maximum Ratings  
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to  
the device. This is a stress rating only and functional operation of the device at these or any other  
conditions above those indicated in the operational sections of this specification is not implied. Exposure  
to absolute maximum rating conditions for extended periods may affect reliability.  
TABLE 8  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Min.  
Unit  
Note  
Max.  
1)  
VDD  
Voltage on VDD pin relative to VSS  
Voltage on VDDQ pin relative to VSS  
Voltage on VDDL pin relative to VSS  
Voltage on any pin relative to VSS  
–1.0  
–0.5  
–0.5  
–0.5  
+2.3  
+2.3  
+2.3  
+2.3  
V
V
V
V
1)1)  
1)1)  
1)  
VDDQ  
VDDL  
VIN, VOUT  
1) When VDD and VDDQ and VDDL are less than 500 mV; VREF may be equal to or less than 300 mV.  
TABLE 9  
Environmental Requirements  
Parameter  
Symbol  
Values  
Min.  
Unit  
Note  
Max.  
Operating temperature (ambient)  
Storage Temperature  
TOPR  
TSTG  
PBar  
HOPR  
HSTG  
0
+65  
+100  
+105  
90  
°C  
°C  
kPa  
%
1)  
2)  
– 50  
+69  
10  
5
Barometric Pressure (operating & storage)  
Operating Humidity (relative)  
Storage Humidity (without condensation)  
95  
%
1) Storage Temperature is the case surface temperature on the center/top side of the DRAM.  
2) Up to 3000 m.  
Rev. 1.12, 2007-10  
12  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 10  
DRAM Component Operating Temperature Range  
Symbol  
Parameter  
Rating  
Unit  
Note  
Min.  
Max.  
1)2)3)4)  
TCASE  
Operating Temperature  
0
95  
°C  
1) Operating Temperature is the case surface temperature on the center / top side of the DRAM.  
2) The operating temperature range are the temperatures where all DRAM specification will be supported. During operation, the DRAM case  
temperature must be maintained between 0 - 95 °C under all other specification parameters.  
3) Above 85 °C the Auto-Refresh command interval has to be reduced to tREFI= 3.9 µs  
4) When operating this product in the 85 °C to 95 °C TCASE temperature range, the High Temperature Self Refresh has to be enabled by  
setting EMR(2) bit A7 to “1”. When the High Temperature Self Refresh is enabled there is an increase of IDD6 by approximately 50%  
3.2  
DC Operating Conditions  
TABLE 11  
Supply Voltage Levels and DC Operating Conditions  
Parameter  
Symbol  
Values  
Min.  
Unit  
Note  
Typ.  
Max.  
Device Supply Voltage  
Output Supply Voltage  
Input Reference Voltage  
SPD Supply Voltage  
VDD  
1.7  
1.8  
1.9  
V
1)  
2)  
VDDQ  
VREF  
1.7  
1.8  
1.9  
V
0.49 × VDDQ  
0.5 × VDDQ  
0.51 × VDDQ  
V
VDDSPD  
VIH(DC)  
VIL (DC  
IL  
1.7  
3.6  
V
DC Input Logic High  
V
REF + 0.125  
V
V
5
DDQ + 0.3  
V
DC Input Logic Low  
)
– 0.30  
– 5  
REF – 0.125  
V
3)  
In / Output Leakage Current  
µA  
1) Under all conditions, VDDQ must be less than or equal to VDD  
2) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC).VREF is also expected to track noise in VDDQ  
3) Input voltage for any connector pin under test of 0 V VIN VDDQ + 0.3 V; all other pins at 0 V. Current is per pin  
.
Rev. 1.12, 2007-10  
13  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
3.3  
Timing Characteristics  
3.3.1  
Speed Grade Definitions  
TABLE 12  
Speed Grade Definition  
Speed Grade  
DDR2–800E  
Unit  
Note  
QAG Sort Name  
CAS-RCD-RP latencies  
Parameter  
–2.5  
6–6–6  
Min.  
tCK  
Symbol  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Period  
@ CL = 3  
tCK  
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
@ CL = 4  
@ CL = 5  
@ CL = 6  
tCK  
3.75  
3
8
tCK  
8
tCK  
2.5  
45  
60  
15  
15  
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
Row Precharge Time  
tRAS  
tRC  
tRCD  
tRP  
70k  
TABLE 13  
Speed Grade Definition  
Speed Grade  
DDR2–667C  
DDR2–533C  
–3.7  
Unit  
Note  
QAG Sort Name  
–3  
CAS-RCD-RP latencies  
Parameter  
4–4–4  
Min.  
4–4–4  
tCK  
Symbol  
Max.  
Min.  
Max.  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)5)  
1)2)3)4)  
1)2)3)4)  
1)2)3)4)  
Clock Period  
@ CL = 3  
tCK  
5
8
5
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
@ CL = 4  
@ CL = 5  
tCK  
3
8
3.75  
3.75  
45  
8
tCK  
3
8
8
Row Active Time  
Row Cycle Time  
RAS-CAS-Delay  
tRAS  
tRC  
tRCD  
tRP  
45  
57  
12  
12  
70k  
70k  
60  
15  
Row Precharge Time  
15  
1) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode. Timings are further guaranteed for normal  
OCD drive strength (EMRS(1) A1 = 0) mentioned in Component datasheet.  
Rev. 1.12, 2007-10  
14  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
2) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode  
3) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ  
4) The output timing reference voltage level is VTT.  
5) tRAS.MAX is calculated from the maximum amount of time a DDR2 device can operate without a refresh command which is equal to 9 x tREFI  
.
3.3.2  
Component AC Timing Parameters  
TABLE 14  
DRAM Component Timing Parameter by Speed Grade - DDR2–800 and DDR2–667  
Parameter  
Symbol DDR2–800  
DDR2–667  
Unit  
Note2)3)5  
)6)7)8)  
Min.  
Max.  
Min.  
Max.  
CAS to CAS command delay  
Average clock high pulse width  
Average clock period  
tCCD  
2
2
nCK  
tCK.AVG  
ps  
10)11)  
12)  
tCH.AVG  
tCK.AVG  
0.48  
2500  
3
0.52  
8000  
0.48  
3000  
3
0.52  
8000  
CKE minimum pulse width ( high and tCKE  
nCK  
low pulse width)  
10)11)  
13)14)  
Average clock low pulse width  
tCL.AVG  
tDAL  
0.48  
0.52  
0.48  
0.52  
tCK.AVG  
Auto-Precharge write recovery +  
precharge time  
WR + tnRP  
WR + tnRP  
nCK  
Minimum time clocks remain ON after tDELAY  
CKE asynchronously drops LOW  
tIS + tCK .AVG ––  
+ tIH  
tIS +  
tCK .AVG + tIH  
––  
ns  
15)19)20)  
DQ and DM input hold time  
tDH.BASE  
125  
––  
175  
––  
ps  
DQ and DM input pulse width for each tDIPW  
0.35  
0.35  
tCK.AVG  
input  
DQS input high pulse width  
DQS input low pulse width  
tDQSH  
tDQSL  
0.35  
0.35  
0.35  
0.35  
tCK.AVG  
tCK.AVG  
ps  
16)  
17)  
DQS-DQ skew for DQS & associated tDQSQ  
200  
240  
DQ signals  
DQS latching rising transition to  
associated clock edges  
tDQSS  
– 0.25  
+ 0.25  
– 0.25  
+ 0.25  
tCK.AVG  
18)19)20)  
17)  
DQ and DM input setup time  
tDS.BASE  
50  
––  
100  
0.2  
0.2  
50  
––  
ps  
DQS falling edge hold time from CK tDSH  
DQS falling edge to CK setup time tDSS  
0.2  
0.2  
45  
tCK.AVG  
tCK.AVG  
ns  
17)  
35)  
Four Activate Window for 2KB page tFAW  
size products  
21)  
CK half pulse width  
tHP  
Min(tCH.ABS  
,
__  
Min(tCH.ABS  
tCL.ABS)  
,
__  
ps  
ps  
tCL.ABS  
)
9)22)  
23)25)  
Data-out high-impedance time from tHZ  
CK / CK  
tAC.MAX  
tAC.MAX  
Address and control input hold time tIH.BASE  
250  
0.6  
275  
0.6  
ps  
Control & address input pulse width tIPW  
tCK.AVG  
for each input  
Rev. 1.12, 2007-10  
15  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Parameter  
Symbol DDR2–800  
Min.  
DDR2–667  
Min.  
Unit  
Note2)3)5  
)6)7)8)  
Max.  
Max.  
24)25)  
9)22)  
9)22)  
Address and control input setup time tIS.BASE  
DQ low impedance time from CK/CK tLZ.DQ  
175  
200  
ps  
ps  
ps  
2 x tAC.MIN  
tAC.MIN  
tAC.MAX  
tAC.MAX  
2 x tAC.MIN  
tAC.MIN  
tAC.MAX  
tAC.MAX  
DQS/DQS low-impedance time from tLZ.DQS  
CK / CK  
35)  
MRS command to ODT update delay tMOD  
0
2
12  
0
2
12  
ns  
Mode register set command cycle  
time  
tMRD  
nCK  
35)  
OCD drive mode output delay  
tOIT  
0
12  
0
12  
ns  
ps  
ps  
µs  
µs  
ns  
26)  
DQ/DQS output hold time from DQS tQH  
t
HP tQHS  
t
HP tQHS  
27)  
DQ hold skew factor  
tQHS  
tREFI  
300  
7.8  
3.9  
340  
7.8  
3.9  
28)29)  
28)30)  
31)  
Average periodic refresh Interval  
Auto-Refresh to Active/Auto-Refresh tRFC  
127.5  
127.5  
command period  
Precharge-All (8 banks) command  
period  
tRP  
t
RP + 1 × tCK  
t
RP + 1 × tCK  
ns  
32)33)  
32)34)  
35)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
0.9  
0.4  
10  
1.1  
0.6  
0.9  
0.4  
10  
1.1  
0.6  
tCK.AVG  
tCK.AVG  
ns  
Active to active command period for tRRD  
2KB page size products  
35)  
Internal Read to Precharge command tRTP  
7.5  
7.5  
ns  
delay  
Write preamble  
tWPRE  
tWPST  
tWR  
0.35  
0.4  
0.6  
0.35  
0.4  
0.6  
tCK.AVG  
tCK.AVG  
ns  
Write postamble  
Write recovery time  
35)  
15  
15  
35)36)  
Internal write to read command delay tWTR  
Exit power down to read command tXARD  
7.5  
7.5  
ns  
2
2
nCK  
nCK  
Exit active power-down mode to read tXARDS  
8 – AL  
7 – AL  
command (slow exit, lower power)  
Exit precharge power-down to any  
valid command (other than NOP or  
Deselect)  
tXP  
2
2
nCK  
ns  
35)  
Exit self-refresh to a non-read  
command  
tXSNR  
t
RFC +10  
t
RFC +10  
Exit self-refresh to read command  
tXSRD  
200  
200  
nCK  
nCK  
Write command to DQS associated  
clock edges  
WL  
RL – 1  
RL–1  
1) For details and notes see the relevant Qimonda component data sheet  
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V.  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
Rev. 1.12, 2007-10  
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10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode. component  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT. component datasheet  
8) New units, ‘tCK.AVG‘ and ‘nCK‘, are introduced in DDR2–667 and DDR2–800. Unit ‘tCK.AVG‘ represents the actual tCK.AVG of the input clock  
under operation. Unit ‘nCK‘ represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2–400 and  
DDR2–533, ‘tCK‘ is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command  
may be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
9) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tERR(6-10PER).MIN = – 272  
ps and tERR(6- 10PER).MAX = + 293 ps, then tDQSCK.MIN(DERATED) = tDQSCK.MIN tERR(6-10PER).MAX = – 400 ps – 293 ps = – 693 ps and  
t
DQSCK.MAX(DERATED) = tDQSCK.MAX tERR(6-10PER).MIN = 400 ps + 272 ps = + 672 ps. Similarly, tLZ.DQ for DDR2–667 derates to tLZ.DQ.MIN(DERATED)  
= - 900 ps – 293 ps = – 1193 ps and tLZ.DQ.MAX(DERATED) = 450 ps + 272 ps = + 722 ps. (Caution on the MIN/MAX usage!)  
10) Input clock jitter spec parameter. These parameters component datasheet are referred to as 'input clock jitter spec parameters' and these  
parameters apply to DDR2–667 and DDR2–800 only. The jitter specified is a random jitter meeting a Gaussian distribution.  
11) These parameters are specified per their average values, however it is understood that the relationship component datasheet between the  
average timing and the absolute instantaneous timing holds all the times (min. and max of SPEC values are to be used for calculations  
component datasheet).  
12) tCKE.MIN of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the  
entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during  
the time period of tIS + 2 x tCK + tIH.  
13) DAL = WR + RU{tRP(ns) / tCK(ns)}, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result  
of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For  
DDR2–533 at tCK = 3.75 ns with tWR programmed to 4 clocks. tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.  
14) tDAL.nCK = WR [nCK] + tnRP.nCK = WR + RU{tRP [ps] / tCK.AVG[ps] }, where WR is the value programmed in the EMR.  
15) Input waveform timing tDH with differential data strobe enabled MR[bit10] = 0, is referenced from the differential data strobe crosspoint to  
the input signal crossing at the VIH.DC level for a falling signal and from the differential data strobe crosspoint to the input signal crossing  
at the VIL.DC level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL.DC.MAX and  
VIH.DC.MIN. See Figure 3.  
16) tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output  
slew rate mismatch between DQS / DQS and associated DQ in any given cycle.  
17) These parameters are measured from a data strobe signal ((L/U/R)DQS / DQS) crossing to its respective clock signal (CK / CK) crossing.  
The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC, etc.), as these are relative to the clock signal  
crossing. That is, these parameters should be met whether clock jitter is present or not.  
18) Input waveform timing tDS with differential data strobe enabled MR[bit10] = 0, is referenced from the input signal crossing at the VIH.AC level  
to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL.AC level to the differential data strobe  
crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between Vil(DC)MAX and Vih(DC)MIN. See  
Figure 3.  
19) If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.  
20) These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal  
((L/U/R)DQS / DQS) crossing.  
21) tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter.  
It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the  
following equation; tHP = MIN (tCH.ABS, tCL.ABS), where, tCH.ABS is the minimum of the actual instantaneous clock high time; tCL.ABS is the  
minimum of the actual instantaneous clock low time.  
22) tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level  
which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) .  
23) input waveform timing is referenced from the input signal crossing at the VIL.DC level for a rising signal and VIH.DC for a falling signal applied  
to the device under test. See Figure 4.  
24) Input waveform timing is referenced from the input signal crossing at the VIH.AC level for a rising signal and VIL.AC for a falling signal applied  
to the device under test. See Figure 4.  
25) These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to  
its respective clock signal (CK / CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT.PER, tJIT.CC  
,
etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should  
be met whether clock jitter is present or not.  
26) tQH = tHP tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under  
the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}  
Examples: 1) If the system provides tHP of 1315 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system  
provides tHP of 1420 ps into a DDR2–667 SDRAM, the DRAM provides tQH of 1080 ps minimum.  
Rev. 1.12, 2007-10  
17  
10312006-I253-V1V0  
                                                                         
                                                                               
                                                                                                                 
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Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
27) tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is  
transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next  
transition, both of which are independent of each other, due to data pin skew, output pattern effects, and pchannel to n-channel variation  
of the output drivers.  
28) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C  
and 95 °C.  
29) 0 °CTCASE 85 °C.  
30) 85 °C < TCASE 95 °C.  
31) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device.  
32) tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving  
(tRPST), or begins driving (tRPRE). Figure 2 shows a method to calculate these points when the device is no longer driving (tRPST), or begins  
driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the  
calculation is consistent.  
33) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.PER of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.PER.MIN = – 72 ps  
and tJIT.PER.MAX = + 93 ps, then tRPRE.MIN(DERATED) = tRPRE.MIN + tJIT.PER.MIN = 0.9 x tCK.AVG – 72 ps = + 2178 ps and tRPRE.MAX(DERATED) = tRPRE.MAX  
+ tJIT.PER.MAX = 1.1 x tCK.AVG + 93 ps = + 2843 ps. (Caution on the MIN/MAX usage!).  
34) When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT.DUTY of the input clock. (output  
deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2–667 SDRAM has tJIT.DUTY.MIN = – 72 ps  
and tJIT.DUTY.MAX = + 93 ps, then tRPST.MIN(DERATED) = tRPST.MIN + tJIT.DUTY.MIN = 0.4 x tCK.AVG – 72 ps = + 928 ps and tRPST.MAX(DERATED) = tRPST.MAX  
+ tJIT.DUTY.MAX = 0.6 x tCK.AVG + 93 ps = + 1592 ps. (Caution on the MIN/MAX usage!).  
35) For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK.AVG}, which is in clock  
cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK.AVG}, which is in  
clock cycles, if all input clock jitter specifications are met. This means: For DDR2–667 5–5–5, of which tRP = 15 ns, the device will support  
t
nRP = RU{tRP / tCK.AVG} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at  
Tm + 5 is valid even if (Tm + 5 - Tm) is less than 15 ns due to input clock jitter.  
36) tWTR is at lease two clocks (2 x tCK) independent of operation frequency.  
FIGURE 2  
Method for calculating transitions and endpoint  
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Rev. 1.12, 2007-10  
18  
10312006-I253-V1V0  
                                                             
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Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
FIGURE 3  
Differential input waveform timing tDS and tDH  
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Rev. 1.12, 2007-10  
19  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 15  
DRAM Component Timing Parameter by Speed Grade - DDR2–533  
Parameter  
Symbol  
DDR2–533  
Unit  
Notes2)3)4)5)6)  
7)  
Min.  
Max.  
CAS A to CAS B command period  
CK, CK high-level width  
tCCD  
tCH  
2
tCK  
tCK  
tCK  
tCK  
tCK  
0.45  
3
0.55  
CKE minimum high and low pulse width tCKE  
CK, CK low-level width  
tCL  
0.45  
WR + tRP  
0.55  
8)  
Auto-Precharge write recovery +  
precharge time  
tDAL  
9)  
Minimum time clocks remain ON after  
CKE asynchronously drops LOW  
tDELAY  
tIS + tCK + tIH  
225  
––  
––  
ns  
ps  
ps  
tCK  
10)  
11)  
DQ and DM input hold time (differential tDH.BASE  
data strobe)  
DQ and DM input hold time (single ended tDH1.BASE  
data strobe)  
–25  
DQ and DM input pulse width (each  
input)  
tDIPW  
0.35  
DQS input HIGH pulse width (write cycle) tDQSH  
DQS input LOW pulse width (write cycle) tDQSL  
0.35  
0.35  
tCK  
tCK  
ps  
11)  
DQS-DQ skew (for DQS & associated  
DQ signals)  
tDQSQ  
300  
Write command to 1st DQS latching  
transition  
tDQSS  
– 0.25  
100  
–25  
0.2  
+ 0.25  
tCK  
ps  
ps  
tCK  
tCK  
ns  
11)  
11)  
DQ and DM input setup time (differential tDS.BASE  
data strobe)  
DQ and DM input setup time (single  
ended data strobe)  
tDS1.BASE  
tDSH  
DQS falling edge hold time from CK  
(write cycle)  
DQS falling edge to CK setup time (write tDSS  
cycle)  
0.2  
13)  
12)  
13)  
Four Activate Window period  
Clock half period  
tFAW  
tHP  
50  
MIN. (tCL, tCH  
)
Data-out high-impedance time from CK / tHZ  
tAC.MAX  
ps  
CK  
11)  
Address and control input hold time  
tIH.BASE  
375  
0.6  
ps  
Address and control input pulse width  
(each input)  
tIPW  
tCK  
11)  
14)  
14)  
Address and control input setup time  
DQ low-impedance time from CK / CK  
DQS low-impedance from CK / CK  
MRS command to ODT update delay  
Mode register set command cycle time  
tIS.BASE  
tLZ(DQ)  
tLZ(DQS)  
tMOD  
250  
ps  
ps  
ps  
ns  
tCK  
2 × tAC.MIN  
tAC.MAX  
tAC.MAX  
12  
tAC.MIN  
0
2
tMRD  
Rev. 1.12, 2007-10  
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HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Parameter  
Symbol  
DDR2–533  
Unit  
Notes2)3)4)5)6)  
7)  
Min.  
Max.  
OCD drive mode output delay  
Data output hold time from DQS  
Data hold skew factor  
tOIT  
0
12  
ns  
tQH  
t
HP tQHS  
tQHS  
tREFI  
tREFI  
tRFC  
400  
7.8  
3.9  
ps  
µs  
µs  
ns  
14)15)  
16)18)  
17)  
Average periodic refresh Interval  
Average periodic refresh Interval  
Auto-Refresh to Active/Auto-Refresh  
command period  
127.5  
Precharge-All (8 banks) command period tRP  
t
RP + 1 × tCK  
ns  
tCK  
tCK  
ns  
14)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
0.9  
0.40  
10  
1.1  
0.60  
14)  
16)22)  
Active bank A to Active bank B command tRRD  
period  
Internal Read to Precharge command  
delay  
tRTP  
7.5  
ns  
Write preamble  
Write postamble  
tWPRE  
tWPST  
tWR  
0.25  
0.40  
15  
tCK  
tCK  
ns  
19)  
0.60  
Write recovery time for write without  
Auto-Precharge  
20)  
21)  
Internal Write to Read command delay  
tWTR  
7.5  
2
ns  
Exit power down to any valid command tXARD  
tCK  
(other than NOP or Deselect)  
21)  
Exit active power-down mode to Read  
command (slow exit, lower power)  
tXARDS  
6 – AL  
2
tCK  
tCK  
Exit precharge power-down to any valid tXP  
command (other than NOP or Deselect)  
Exit Self-Refresh to non-Read command tXSNR  
t
RFC +10  
200  
WR/tCK  
ns  
Exit Self-Refresh to Read command  
tXSRD  
tCK  
tCK  
22)  
Write recovery time for write with Auto-  
Precharge  
WR  
t
1) For details and notes see the relevant Qimonda component data sheet  
2) VDDQ = 1.8 V ± 0.1V; VDD = 1.8 V ± 0.1 V.  
3) Timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must be powered down  
and then restarted through the specified initialization sequence before normal operation can continue.  
4) Timings are guaranteed with CK/CK differential Slew Rate of 2.0 V/ns. For DQS signals timings are guaranteed with a differential Slew  
Rate of 2.0 V/ns in differential strobe mode and a Slew Rate of 1 V/ns in single ended mode.  
5) The CK / CK input reference level (for timing reference to CK / CK) is the point at which CK and CK cross. The DQS / DQS, RDQS / RDQS,  
input reference level is the crosspoint when in differential strobe mode. component  
6) Inputs are not recognized as valid until VREF stabilizes. During the period before VREF stabilizes, CKE = 0.2 x VDDQ is recognized as low.  
7) The output timing reference voltage level is VTT. component datasheet  
8) For each of the terms, if not already an integer, round to the next highest integer. tCK refers to the application clock period. WR refers to  
the WR parameter stored in the MR.  
9) The clock frequency is allowed to change during self-refresh mode or precharge power-down mode.  
10) For timing definition, refer to the Component data sheet.  
11) Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output Slew Rate  
mis-match between DQS / DQS and associated DQ in any given cycle.  
Rev. 1.12, 2007-10  
21  
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Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
12) MIN (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can  
be greater than the minimum specification limits for tCL and tCH).  
13) The tHZ, tRPST and tLZ, tRPRE parameters are referenced to a specific voltage level, which specify when the device output is no longer driving  
(tHZ, tRPST), or begins driving (tLZ, tRPRE). tHZ and tLZ transitions occur in the same access time windows as valid data transitions.These  
parameters are verified by design and characterization, but not subject to production test.  
14) The Auto-Refresh command interval has be reduced to 3.9 µs when operating the DDR2 DRAM in a temperature range between 85 °C  
and 95 °C.  
15) 0 °CTCASE 85 °C.  
16) 85 °C < TCASE 95 °C.  
17) A maximum of eight Auto-Refresh commands can be posted to any given DDR2 SDRAM device  
18) The tRRD timing parameter depends on the page size of the DRAM organization.  
19) The maximum limit for the tWPST parameter is not a device limit. The device operates with a greater value for this parameter, but system  
performance (bus turnaround) degrades accordingly.  
20) Minimum tWTR is two clocks when operating the DDR2-SDRAM at frequencies ≤ 200 ΜΗz.  
21) User can choose two different active power-down modes for additional power saving via MRS address bit A12. In “standard active power-  
down mode” (MR, A12 = “0”) a fast power-down exit timing tXARD can be used. In “low active power-down mode” (MR, A12 =”1”) a slow  
power-down exit timing tXARDS has to be satisfied.  
22) WR must be programmed to fulfill the minimum requirement for the tWR timing parameter, where WRMIN[cycles] = tWR(ns)/tCK(ns) rounded  
up to the next integer value. tDAL = WR + (tRP/tCK). For each of the terms, if not already an integer, round to the next highest integer. tCK  
refers to the application clock period. WR refers to the WR parameter stored in the MRS.  
3.3.3  
ODT AC Electrical Characteristics  
This chapter describes the ODT AC electrical characteristics.  
TABLE 16  
ODT AC Characteristics and Operating Conditions for DDR2-667 & DDR2-800  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
1)  
tAOND  
tAON  
ODT turn-on delay  
2
2
nCK  
ns  
1)2)  
1)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 0.7 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
tAC.MIN + 2 ns  
2 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
2.5  
2.5  
nCK  
ns  
1)3)  
1)  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
tAC.MIN + 2 ns  
2.5 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
3
8
nCK  
nCK  
1)  
1) New units, “tCK.AVG” and “nCK”, are introduced in DDR2-667 and DDR2-800. Unit “tCK.AVG” represents the actual tCK.AVG of the input clock  
under operation. Unit “nCK” represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and  
DDR2-533, “tCK” is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may  
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is  
2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.  
3) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5  
ns (= 0.5 x 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT LOW and by counting the  
actual input clock edges.  
Rev. 1.12, 2007-10  
22  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 17  
ODT AC Characteristics and Operating Conditions for DDR2-533  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
tAOND  
tAON  
ODT turn-on delay  
2
2
tCK  
ns  
ns  
tCK  
ns  
ns  
tCK  
tCK  
1)  
2)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 1 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
tAC.MIN + 2 ns  
2 tCK + tAC.MAX + 1 ns  
2.5  
2.5  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
tAC.MIN + 2 ns  
2.5 tCK + tAC.MAX + 1 ns  
3
8
1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is  
10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is  
12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if tCK = 5 ns.  
Rev. 1.12, 2007-10  
23  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
3.4  
IDD Specifications and Conditions  
List of tables defining IDD Specifications and Conditions.  
TABLE 18  
DD Measurement Conditions  
I
Parameter  
Symbol Note1)2)  
3)4)5)  
Operating Current 0  
IDD0  
One bank Active - Precharge; tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN, CKE is HIGH, CS is HIGH between  
valid commands. Address and control inputs are SWITCHING, Databus inputs are SWITCHING.  
6)  
Operating Current 1  
IDD1  
One bank Active - Read - Precharge; IOUT = 0 mA, BL = 4, tCK = tCK.MIN, tRC = tRC.MIN, tRAS = tRAS.MIN  
,
t
RCD = tRCD.MIN, AL = 0, CL = CLMIN; CKE is HIGH, CS is HIGH between valid commands. Address and  
control inputs are SWITCHING, Databus inputs are SWITCHING.  
Precharge Standby Current  
IDD2N  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are SWITCHING,  
Databus inputs are SWITCHING.  
Precharge Power-Down Current  
Other control and address inputs are STABLE, Data bus inputs are FLOATING.  
IDD2P  
IDD2Q  
Precharge Quiet Standby Current  
All banks idle; CS is HIGH; CKE is HIGH; tCK = tCK.MIN; Other control and address inputs are STABLE,  
Data bus inputs are FLOATING.  
Active Standby Current  
IDD3N  
Burst Read: All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN  
;
t
RAS = tRAS.MAX, tRP = tRP.MIN; CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
SWITCHING; Data Bus inputs are SWITCHING; IOUT = 0 mA.  
Active Power-Down Current  
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs  
are FLOATING. MRS A12 bit is set to LOW (Fast Power-down Exit);  
IDD3P(0)  
IDD3P(1)  
IDD4R  
Active Power-Down Current  
All banks open; tCK = tCK.MIN, CKE is LOW; Other control and address inputs are STABLE, Data bus inputs  
are FLOATING. MRS A12 bit is set to HIGH (Slow Power-down Exit);  
6)  
Operating Current - Burst Read  
All banks open; Continuous burst reads; BL = 4; AL = 0, CL = CLMIN; tCK = tCKMIN; tRAS = tRASMAX  
;
t
RP = tRPMIN; CKE is HIGH, CS is HIGH between valid commands; Address inputs are SWITCHING; Data  
bus inputs are SWITCHING; IOUT = 0mA.  
Operating Current - Burst Write  
IDD4W  
All banks open; Continuous burst writes; BL = 4; AL = 0, CL = CLMIN; tCK = tCK.MIN  
;
t
RAS = tRAS.MAX., tRP = tRP.MAX; CKE is HIGH, CS is HIGH between valid commands. Address inputs are  
SWITCHING; Data Bus inputs are SWITCHING;  
Burst Refresh Current  
IDD5B  
t
CK = tCK.MIN., Refresh command every tRFC = tRFC.MIN interval, CKE is HIGH, CS is HIGH between valid  
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.  
Distributed Refresh Current  
IDD5D  
t
CK = tCK.MIN., Refresh command every tRFC = tREFI interval, CKE is LOW and CS is HIGH between valid  
commands, Other control and address inputs are SWITCHING, Data bus inputs are SWITCHING.  
Rev. 1.12, 2007-10  
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Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Parameter  
Symbol Note1)2)  
3)4)5)  
Self-Refresh Current  
IDD6  
CKE 0.2 V; external clock off, CK and CK at 0 V; Other control and address inputs are FLOATING, Data  
bus inputs are FLOATING. IDD6 current values are guaranteed up to TCASE of 85 °C max.  
6)  
All Bank Interleave Read Current  
IDD7  
All banks are being interleaved at minimum tRC without violating tRRD using a burst length of 4. Control  
and address bus inputs are STABLE during DESELECTS. Iout = 0 mA.  
1)  
2)  
V
DDQ = 1.8 V ± 0.1 V; VDD = 1.8 V ± 0.1 V  
IDD specifications are tested after the device is properly initialized and IDD parameter are specified with ODT disabled.  
3) Definitions for IDD see Table 19  
4) For two rank modules: All active current measurements in the same IDD current mode. The other rank is in IDD2P Precharge Power-Down  
Mode.  
5) For details and notes see the relevant Qimonda component data sheet.  
6)  
IDD1, IDD4R and IDD7 current measurements are defined with the outputs disabled (IOUT = 0 mA). To achieve this on module level the output  
buffers can be disabled using an EMRS(1) (Extended Mode Register Command) by setting A12 bit to HIGH.  
TABLE 19  
Definitions for IDD  
Parameter  
LOW  
Description  
VIN VIL(ac).MAX, HIGH is defined as VIN VIH(ac).MIN  
Inputs are stable at a HIGH or LOW level  
Inputs are VREF = VDDQ /2  
STABLE  
FLOATING  
SWITCHING  
Inputs are changing between HIGH and LOW every other clock (once per 2 cycles) for address and control  
signals, and inputs changing between HIGH and LOW every other data transfer (once per cycle) for DQ  
signals not including mask or strobes.  
Rev. 1.12, 2007-10  
25  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 20  
DD Specification for HYS64T128020EDL–[2.5/3S/3.7]–B  
I
Product Type HYS64T128020EDL–2.5–B HYS64T128020EDL–3S–B HYS64T128020EDL–3.7–B Units Note1)  
Organization 1 GB  
1 GB  
×64  
1 GB  
×64  
×64  
2 Ranks  
2 Ranks  
–3S  
2 Ranks  
–3.7  
–2.5  
2)  
IDD0  
648  
688  
560  
96  
588  
628  
520  
96  
548  
568  
440  
96  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
2)  
IDD1  
3)  
IDD2N  
3)  
IDD2P  
3)  
IDD2Q  
IDD3N  
520  
720  
384  
120  
1008  
1008  
948  
104  
64  
480  
560  
360  
120  
868  
868  
888  
104  
64  
400  
480  
304  
120  
748  
748  
848  
104  
64  
3)  
3)4)  
3)5)  
2)  
IDD3P_0 (fast)  
IDD3P_1 (slow)  
IDD4R  
2)  
IDD4W  
IDD5B  
2)  
3)6)  
3)6)  
2)  
IDD5D  
IDD6  
IDD7  
1408  
1248  
1168  
1) Calculated values from component data. ODT disabled. IDD1,  
I
DD4R, and IDD7, are defined with the outputs disabled.  
2) The other rank is in IDD2P Precharge Power-Down Current mode  
3) Both ranks are in the same IDD current mode  
4) Fast: MRS(12)=0  
5) Slow: MRS(12)=1  
6)  
IDD5D and IDD6 values are for 0°C TCase 85°C  
Rev. 1.12, 2007-10  
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HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
4
SPD Codes  
This chapter lists all hexadecimal byte values stored in the EEPROM of the products described in this data sheet. SPD stands  
for serial presence detect. All values with XX in the table are module specific bytes which are defined during production.  
List of SPD Code Tables  
Table 21 “HYS64T128020EDL–2.5–B” on Page 27  
Table 22 “HYS64T128020EDL–3S–B” on Page 31  
Table 23 “HYS64T128020EDL–3.7–B” on Page 35  
TABLE 21  
HYS64T128020EDL–2.5–B  
Product Type  
Organization  
HYS64T128020EDL–2.5–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–6400S–666  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
0
Programmed SPD Bytes in EEPROM  
Total number of Bytes in EEPROM  
Memory Type (DDR2)  
80  
08  
08  
0D  
0A  
61  
40  
00  
05  
25  
40  
00  
82  
10  
00  
00  
0C  
08  
70  
01  
1
2
3
Number of Row Addresses  
Number of Column Addresses  
DIMM Rank and Stacking Information  
Data Width  
4
5
6
7
Not used  
8
Interface Voltage Level  
9
t
t
CK @ CLMAX (Byte 18) [ns]  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
AC SDRAM @ CLMAX (Byte 18) [ns]  
Error Correction Support (non-ECC, ECC)  
Refresh Rate and Type  
Primary SDRAM Width  
Error Checking SDRAM Width  
Not used  
Burst Length Supported  
Number of Banks on SDRAM Device  
Supported CAS Latencies  
DIMM Mechanical Characteristics  
Rev. 1.12, 2007-10  
27  
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Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–2.5–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–6400S–666  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
DIMM Type Information  
DIMM Attributes  
04  
00  
07  
30  
45  
3D  
50  
3C  
28  
3C  
2D  
80  
17  
25  
05  
12  
3C  
1E  
1E  
00  
06  
3C  
7F  
80  
14  
1E  
00  
5F  
58  
53  
3B  
27  
2A  
Component Attributes  
t
t
t
t
t
t
t
t
CK @ CLMAX -1 (Byte 18) [ns]  
AC SDRAM @ CLMAX -1 [ns]  
CK @ CLMAX -2 (Byte 18) [ns]  
AC SDRAM @ CLMAX -2 [ns]  
RP.MIN [ns]  
RRD.MIN [ns]  
RCD.MIN [ns]  
RAS.MIN [ns]  
Module Density per Rank  
t
t
t
t
t
t
t
AS.MIN and tCS.MIN [ns]  
AH.MIN and tCH.MIN [ns]  
DS.MIN [ns]  
DH.MIN [ns]  
WR.MIN [ns]  
WTR.MIN [ns]  
RTP.MIN [ns]  
Analysis Characteristics  
t
t
t
t
t
t
RC and tRFC Extension  
RC.MIN [ns]  
RFC.MIN [ns]  
CK.MAX [ns]  
DQSQ.MAX [ns]  
QHS.MAX [ns]  
PLL Relock Time  
CASE.MAX Delta / T4R4W Delta  
T
Psi(T-A) DRAM  
T0 (DT0)  
T2N (DT2N, UDIMM) or T2Q (DT2Q, RDIMM)  
T2P (DT2P)  
T3N (DT3N)  
Rev. 1.12, 2007-10  
28  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–2.5–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–6400S–666  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
T3P.fast (DT3P fast)  
43  
1E  
54  
22  
42  
00  
00  
00  
00  
12  
22  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
T3P.slow (DT3P slow)  
T4R (DT4R) / T4R4W Sign (DT4R4W)  
T5B (DT5B)  
T7 (DT7)  
Psi(ca) PLL  
Psi(ca) REG  
TPLL (DTPLL)  
TREG (DTREG) / Toggle Rate  
SPD Revision  
Checksum of Bytes 0-62  
Manufacturer’s JEDEC ID Code (1)  
Manufacturer’s JEDEC ID Code (2)  
Manufacturer’s JEDEC ID Code (3)  
Manufacturer’s JEDEC ID Code (4)  
Manufacturer’s JEDEC ID Code (5)  
Manufacturer’s JEDEC ID Code (6)  
Manufacturer’s JEDEC ID Code (7)  
Manufacturer’s JEDEC ID Code (8)  
Module Manufacturer Location  
Product Type, Char 1  
36  
34  
54  
31  
32  
38  
30  
32  
30  
45  
44  
4C  
32  
Product Type, Char 2  
Product Type, Char 3  
Product Type, Char 4  
Product Type, Char 5  
Product Type, Char 6  
Product Type, Char 7  
Product Type, Char 8  
Product Type, Char 9  
Product Type, Char 10  
Product Type, Char 11  
Product Type, Char 12  
Product Type, Char 13  
Rev. 1.12, 2007-10  
29  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–2.5–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–6400S–666  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Product Type, Char 14  
2E  
35  
42  
20  
20  
0x  
xx  
xx  
xx  
xx  
00  
FF  
Product Type, Char 15  
Product Type, Char 16  
Product Type, Char 17  
Product Type, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
95 - 98 Module Serial Number  
99 - 127 Not used  
128 -  
255  
Blank for customer use  
Rev. 1.12, 2007-10  
30  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 22  
HYS64T128020EDL–3S–B  
Product Type  
Organization  
HYS64T128020EDL–3S–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–5300S–555  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
0
Programmed SPD Bytes in EEPROM  
Total number of Bytes in EEPROM  
Memory Type (DDR2)  
80  
08  
08  
0D  
0A  
61  
40  
00  
05  
30  
45  
00  
82  
10  
00  
00  
0C  
08  
38  
01  
04  
00  
07  
3D  
50  
50  
60  
3C  
28  
3C  
1
2
3
Number of Row Addresses  
Number of Column Addresses  
DIMM Rank and Stacking Information  
Data Width  
4
5
6
7
Not used  
8
Interface Voltage Level  
9
t
t
CK @ CLMAX (Byte 18) [ns]  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
AC SDRAM @ CLMAX (Byte 18) [ns]  
Error Correction Support (non-ECC, ECC)  
Refresh Rate and Type  
Primary SDRAM Width  
Error Checking SDRAM Width  
Not used  
Burst Length Supported  
Number of Banks on SDRAM Device  
Supported CAS Latencies  
DIMM Mechanical Characteristics  
DIMM Type Information  
DIMM Attributes  
Component Attributes  
t
t
t
t
t
t
t
CK @ CLMAX -1 (Byte 18) [ns]  
AC SDRAM @ CLMAX -1 [ns]  
CK @ CLMAX -2 (Byte 18) [ns]  
AC SDRAM @ CLMAX -2 [ns]  
RP.MIN [ns]  
RRD.MIN [ns]  
RCD.MIN [ns]  
Rev. 1.12, 2007-10  
31  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3S–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–5300S–555  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
RAS.MIN [ns]  
Module Density per Rank  
HEX  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
t
2D  
80  
20  
27  
10  
17  
3C  
1E  
1E  
00  
06  
3C  
7F  
80  
18  
22  
00  
5D  
58  
43  
32  
27  
24  
39  
1E  
48  
21  
34  
00  
00  
00  
00  
12  
t
t
t
t
t
t
t
AS.MIN and tCS.MIN [ns]  
AH.MIN and tCH.MIN [ns]  
DS.MIN [ns]  
DH.MIN [ns]  
WR.MIN [ns]  
WTR.MIN [ns]  
RTP.MIN [ns]  
Analysis Characteristics  
t
t
t
t
t
t
RC and tRFC Extension  
RC.MIN [ns]  
RFC.MIN [ns]  
CK.MAX [ns]  
DQSQ.MAX [ns]  
QHS.MAX [ns]  
PLL Relock Time  
CASE.MAX Delta / T4R4W Delta  
T
Psi(T-A) DRAM  
T0 (DT0)  
T2N (DT2N, UDIMM) or T2Q (DT2Q, RDIMM)  
T2P (DT2P)  
T3N (DT3N)  
T3P.fast (DT3P fast)  
T3P.slow (DT3P slow)  
T4R (DT4R) / T4R4W Sign (DT4R4W)  
T5B (DT5B)  
T7 (DT7)  
Psi(ca) PLL  
Psi(ca) REG  
TPLL (DTPLL)  
TREG (DTREG) / Toggle Rate  
SPD Revision  
Rev. 1.12, 2007-10  
32  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3S–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–5300S–555  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Checksum of Bytes 0-62  
Manufacturer’s JEDEC ID Code (1)  
Manufacturer’s JEDEC ID Code (2)  
Manufacturer’s JEDEC ID Code (3)  
Manufacturer’s JEDEC ID Code (4)  
Manufacturer’s JEDEC ID Code (5)  
Manufacturer’s JEDEC ID Code (6)  
Manufacturer’s JEDEC ID Code (7)  
Manufacturer’s JEDEC ID Code (8)  
Module Manufacturer Location  
Product Type, Char 1  
12  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
36  
34  
54  
31  
32  
38  
30  
32  
30  
45  
44  
4C  
33  
53  
42  
20  
20  
20  
1x  
xx  
Product Type, Char 2  
Product Type, Char 3  
Product Type, Char 4  
Product Type, Char 5  
Product Type, Char 6  
Product Type, Char 7  
Product Type, Char 8  
Product Type, Char 9  
Product Type, Char 10  
Product Type, Char 11  
Product Type, Char 12  
Product Type, Char 13  
Product Type, Char 14  
Product Type, Char 15  
Product Type, Char 16  
Product Type, Char 17  
Product Type, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
xx  
xx  
95 - 98 Module Serial Number  
xx  
Rev. 1.12, 2007-10  
33  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3S–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–5300S–555  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
99 - 127 Not used  
00  
128 -  
255  
Blank for customer use  
FF  
Rev. 1.12, 2007-10  
34  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
TABLE 23  
HYS64T128020EDL–3.7–B  
Product Type  
Organization  
HYS64T128020EDL–3.7–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–4200S–444  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
0
Programmed SPD Bytes in EEPROM  
Total number of Bytes in EEPROM  
Memory Type (DDR2)  
80  
08  
08  
0D  
0A  
61  
40  
00  
05  
3D  
50  
00  
82  
10  
00  
00  
0C  
08  
38  
00  
04  
00  
07  
3D  
50  
50  
60  
3C  
28  
3C  
1
2
3
Number of Row Addresses  
Number of Column Addresses  
DIMM Rank and Stacking Information  
Data Width  
4
5
6
7
Not used  
8
Interface Voltage Level  
9
t
t
CK @ CLMAX (Byte 18) [ns]  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
AC SDRAM @ CLMAX (Byte 18) [ns]  
Error Correction Support (non-ECC, ECC)  
Refresh Rate and Type  
Primary SDRAM Width  
Error Checking SDRAM Width  
Not used  
Burst Length Supported  
Number of Banks on SDRAM Device  
Supported CAS Latencies  
DIMM Mechanical Characteristics  
DIMM Type Information  
DIMM Attributes  
Component Attributes  
t
t
t
t
t
t
t
CK @ CLMAX -1 (Byte 18) [ns]  
AC SDRAM @ CLMAX -1 [ns]  
CK @ CLMAX -2 (Byte 18) [ns]  
AC SDRAM @ CLMAX -2 [ns]  
RP.MIN [ns]  
RRD.MIN [ns]  
RCD.MIN [ns]  
Rev. 1.12, 2007-10  
35  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3.7–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–4200S–444  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
RAS.MIN [ns]  
Module Density per Rank  
HEX  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
t
2D  
80  
25  
37  
10  
22  
3C  
1E  
1E  
00  
06  
3C  
7F  
80  
1E  
28  
00  
59  
60  
3F  
2A  
2B  
20  
35  
21  
40  
22  
31  
00  
00  
00  
00  
12  
t
t
t
t
t
t
t
AS.MIN and tCS.MIN [ns]  
AH.MIN and tCH.MIN [ns]  
DS.MIN [ns]  
DH.MIN [ns]  
WR.MIN [ns]  
WTR.MIN [ns]  
RTP.MIN [ns]  
Analysis Characteristics  
t
t
t
t
t
t
RC and tRFC Extension  
RC.MIN [ns]  
RFC.MIN [ns]  
CK.MAX [ns]  
DQSQ.MAX [ns]  
QHS.MAX [ns]  
PLL Relock Time  
CASE.MAX Delta / T4R4W Delta  
T
Psi(T-A) DRAM  
T0 (DT0)  
T2N (DT2N, UDIMM) or T2Q (DT2Q, RDIMM)  
T2P (DT2P)  
T3N (DT3N)  
T3P.fast (DT3P fast)  
T3P.slow (DT3P slow)  
T4R (DT4R) / T4R4W Sign (DT4R4W)  
T5B (DT5B)  
T7 (DT7)  
Psi(ca) PLL  
Psi(ca) REG  
TPLL (DTPLL)  
TREG (DTREG) / Toggle Rate  
SPD Revision  
Rev. 1.12, 2007-10  
36  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3.7–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–4200S–444  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Checksum of Bytes 0-62  
Manufacturer’s JEDEC ID Code (1)  
Manufacturer’s JEDEC ID Code (2)  
Manufacturer’s JEDEC ID Code (3)  
Manufacturer’s JEDEC ID Code (4)  
Manufacturer’s JEDEC ID Code (5)  
Manufacturer’s JEDEC ID Code (6)  
Manufacturer’s JEDEC ID Code (7)  
Manufacturer’s JEDEC ID Code (8)  
Module Manufacturer Location  
Product Type, Char 1  
42  
7F  
7F  
7F  
7F  
7F  
51  
00  
00  
xx  
36  
34  
54  
31  
32  
38  
30  
32  
30  
45  
44  
4C  
33  
2E  
37  
42  
20  
20  
3x  
xx  
Product Type, Char 2  
Product Type, Char 3  
Product Type, Char 4  
Product Type, Char 5  
Product Type, Char 6  
Product Type, Char 7  
Product Type, Char 8  
Product Type, Char 9  
Product Type, Char 10  
Product Type, Char 11  
Product Type, Char 12  
Product Type, Char 13  
Product Type, Char 14  
Product Type, Char 15  
Product Type, Char 16  
Product Type, Char 17  
Product Type, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
xx  
xx  
95 - 98 Module Serial Number  
xx  
Rev. 1.12, 2007-10  
37  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Product Type  
Organization  
HYS64T128020EDL–3.7–B  
1 GByte  
×64  
2 Ranks (×16)  
PC2–4200S–444  
Rev. 1.2  
Label Code  
JEDEC SPD Revision  
Byte#  
Description  
HEX  
99 - 127 Not used  
00  
128 -  
255  
Blank for customer use  
FF  
Rev. 1.12, 2007-10  
38  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
5
Package Outlines  
FIGURE 5  
Package Outline Raw Card A L-DIM-200-31  
ꢃꢅꢁꢃ  
ꢄꢁꢈ -!8ꢁ  
›ꢀꢁꢂ  
ꢃꢄꢁꢃ  
ꢂꢋ  
ꢂꢌꢌ  
ꢉꢊꢁꢂꢇꢋ  
›ꢀꢁꢂ  
ꢉꢊꢁꢆꢇꢋ  
›ꢀꢁꢂ  
ꢂꢅꢁꢇꢇ  
›ꢀꢁꢂ  
ꢊꢁꢅ  
ꢉꢂꢁꢇꢋ  
›ꢀꢁꢂ  
ꢂꢂꢁꢆ  
›ꢀꢁꢂ  
ꢆꢅꢁꢆ  
ꢉꢂꢁꢈꢋ  
ꢉꢊꢁꢆꢇꢋ  
›ꢀꢁꢂ  
ꢉꢊꢁꢂꢇꢋ  
ꢊꢀꢀ  
ꢊꢁꢆ  
›ꢀꢁꢂ  
$ETAIL OF CONTACTS  
ꢊꢋ  
›ꢀꢁꢀꢄ  
ꢀꢁꢆꢇ  
›ꢀꢁꢂ  
ꢀꢁꢃ  
-).ꢁ  
$RAWING ACCORDING TO )3/ ꢈꢀꢂꢇ  
'ENERAL TOLERANCES ›ꢀꢁꢂꢇ  
$IMENSIONS IN MM  
)32B/Bꢃ',0BBBBꢃꢂꢉꢉꢃꢉꢇꢁ  
Notes  
1. Thermal Sensor (Optional)  
2. SPD or Combidevice (if used then no Thermal Sensor needed)  
Rev. 1.12, 2007-10  
39  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
6
Product Type Nomenclature  
Qimonda’s nomenclature uses simple coding combined with  
some proprietary coding. Table 24 provides examples for  
module and component product type number as well as the  
field number. The detailed field description together with  
possible values and coding explanation is listed for modules  
in Table 25 and for components in Table 26.  
TABLE 24  
Nomenclature Fields and Examples  
Example for  
Field Number  
1
2
3
4
5
6
7
8
9
10  
11  
Micro-DIMM  
DDR2 DRAM  
HYS  
HYB  
64  
18  
T
T
64/128  
0
2
0
0
K
A
M
C
–5  
–5  
–A  
512/1G 16  
TABLE 25  
DDR2 DIMM Nomenclature  
Field  
Description  
Values  
Coding  
1
2
Qimonda Module Prefix  
Module Data Width [bit]  
HYS  
64  
Constant  
Non-ECC  
ECC  
72  
3
4
DRAM Technology  
T
DDR2  
Memory Density per I/O [Mbit];  
Module Density1)  
32  
256 MByte  
512 MByte  
1 GByte  
2 GByte  
4 GByte  
64  
128  
256  
512  
0 .. 9  
0, 2, 4  
0 .. 9  
A .. Z  
D
5
6
7
8
9
Raw Card Generation  
Number of Module Ranks  
Product Variations  
Look up table  
1, 2, 4  
Look up table  
Look up table  
SO-DIMM  
Package, Lead-Free Status  
Module Type  
M
Micro-DIMM  
Registered  
Unbuffered  
Fully Buffered  
R
U
F
Rev. 1.12, 2007-10  
40  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Field  
Description  
Values  
Coding  
10  
Speed Grade  
–19F  
–1.9  
–25F  
–2.5  
–3  
PC2–8500 6–6–6  
PC2–8500 7–7–7  
PC2–6400 5–5–5  
PC2–6400 6–6–6  
PC2–5300 4–4–4  
PC2–5300 5–5–5  
PC2–4200 4–4–4  
PC2–3200 3–3–3  
First  
–3S  
–3.7  
–5  
11  
Die Revision  
–A  
–B  
Second  
1) Multiplying “Memory Density per I/O” with “Module Data Width” and dividing by 8 for Non-ECC and 9 for ECC modules gives the overall  
module memory density in MBytes as listed in column “Coding”.  
TABLE 26  
DDR2 DRAM Nomenclature  
Field  
Description  
Values  
Coding  
1
2
3
4
Qimonda Component Prefix  
Interface Voltage [V]  
HYB  
18  
Constant  
SSTL_18  
DRAM Technology  
T
DDR2  
Component Density [Mbit]  
256  
512  
1G  
2G  
40  
256 Mbit  
512 Mbit  
1 Gbit  
2 Gbit  
5+6  
Number of I/Os  
×4  
80  
×8  
16  
×16  
7
8
Product Variations  
Die Revision  
0 .. 9  
A
Look up table  
First  
B
Second  
9
Package, Lead-Free Status  
Speed Grade  
C
FBGA, lead-containing  
FBGA, lead-free  
PC2–8500 6–6–6  
PC2–8500 7–7–7  
PC2–6400 5–5–5  
PC2–6400 6–6–6  
PC2–5300 4–4–4  
PC2–5300 5–5–5  
PC2–4200 4–4–4  
PC2–3200 3–3–3  
F
10  
–19F  
–1.9  
–25F  
–2.5  
–3  
–3S  
–3.7  
–5  
Rev. 1.12, 2007-10  
41  
10312006-I253-V1V0  
Internet Data Sheet  
HYS64T128020EDL–[2.5/3S/3.7]–B  
Small Outlined DDR2 SDRAM Modules  
Contents  
1
1.1  
1.2  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2
Pin Configurations and Block Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
2.1  
Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
3
3.1  
3.2  
3.3  
3.3.1  
3.3.2  
3.3.3  
3.4  
Electrical Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
DC Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Timing Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Speed Grade Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Component AC Timing Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
ODT AC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22  
IDD Specifications and Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24  
4
5
6
SPD Codes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39  
Product Type Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40  
Rev. 1.12, 2007-10  
42  
10312006-I253-V1V0  
Internet Data Sheet  
Edition 2007-10  
Published by Qimonda AG  
Gustav-Heinemann-Ring 212  
D-81739 München, Germany  
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厂商 型号 描述 页数 下载

INFINEON

HYS64-72V2200GU-8 3.3V 2M ×64 /72- 1位BANK SDRAM模块3.3V 4M ×64 /72- 2位BANK SDRAM模块[ 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module ] 17 页

INFINEON

HYS64-74V8200GU 3.3 V 8M ×64 /72- 1位银行SDRAM模块3.3 V 16M ×64 /72- 2位银行SDRAM模块[ 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module ] 17 页

INFINEON

HYS6472V16200GU 3.3 V 16M ×64 /72-位SDRAM模块3.3 V 32M ×64 /72-位SDRAM模块3.3 V 64M ×64 /72-位SDRAM模块[ 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules ] 17 页

INFINEON

HYS6472V4200GU 3.3V 4M ×64 /72- 1位BANK SDRAM模块3.3V 8M ×64 /72- 2位BANK SDRAM模块[ 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module ] 15 页

INFINEON

HYS64D128020GBDL-6-A [ DDR DRAM Module, 128MX64, 0.7ns, CMOS, SO-DIMM-200 ] 11 页

ETC

HYS64D128020GBDL-7-A ? 1GB ( 1024Mx64 ) PC2100 2银行?\n[ ?1GB (1024Mx64) PC2100 2-bank? ] 11 页

INFINEON

HYS64D128020GU-7-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

INFINEON

HYS64D128020GU-8-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

QIMONDA

HYS64D128020GU-8-A [ DDR DRAM Module, 128MX64, 0.8ns, CMOS, PDMA184 ] 18 页

INFINEON

HYS64D128021 200针的小型双列直插式内存模块[ 200-Pin Small Outline Dual-In-Line Memory Modules ] 23 页

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