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CZRA3033

型号：

CZRA3033

描述：

表面贴装稳压二极管[ Surface Mount Zener Diode ]

品牌：

COMCHIP[ COMCHIP TECHNOLOGY ]

页数：

5 页

PDF大小：

118 K

下载PDF手册
SSuurffaace Moount Zener Diode  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
CZRA3011 Thru CZRA3100  
Voltage: 11 - 100 Volts  
Power: 3.0 Watt  
Features  
- For surf ace mounted applications in order to  
optimize board space  
- Low profile package  
- Built-in strain relief  
DO-214AC (SMA)  
- Glass passivated junction  
- Low inductance  
0.067(1.70)  
0.051(1.29)  
0.110(2.79)  
0.086(2.18)  
- Excellent clamping capability  
- Typical ID less than 1uA above 11V  
0.180(4.57)  
0.160(4.06)  
- High temperature soldering 260°C /10  
seconds at terminals  
0.012(0.31)  
0.006(0.15)  
- Plastic package has underwriters laboratory  
flammability classification 94V-O  
0.091(2.31)  
0.067(1.70)  
Mechanical data  
- Case: JEDEC DO-214AC, Molded plastic  
over passivated junction  
0.008(0.20)  
0.004(0.10)  
0.059(1.50)  
0.035(0.89)  
0.209(5.31)  
0.185(4.70)  
- Terminals: Solder plated, solderable per MIL-  
STD-750, method 2026  
- Polarity: Color band denotes positive end  
(cathode) except Bidirectional  
Dimensions in inches and (millimeters)  
- Standard Packaging: 12mm tape (EIA-481)  
- Weight: 0.002 ounce, 0.064 gram  
Maximum Ratings and Electrical Characterics  
Ratings at 25°C ambient temperature unless otherwise specified.  
Rating  
Peak Pulse Power Dissipation (Note A)  
Derate above 75  
Symbol  
Value  
3
24  
Units  
Watts  
mW/°C  
PD  
Peak forward Surge Current 8.3ms single half sine-wave superimposed  
on rated load (JEDEC Method) (Note B)  
Operating Junction and Storage Temperature Range  
IFSM  
15  
Amps  
°C  
TJ,TSTG  
-55 to +150  
Page 1  
MDS0211015A  
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
ELECTRICAL CHARACTERISTICS  
(TA=25°C unless otherwise noted) (VF=1.2Volts Max, IF=500mA for all types.)  
Nominal  
Zener  
Voltage VZ  
Maximum Zener Impedance  
Surge  
Current  
@TA=25°C  
(Note 4.)  
Test  
current  
IZT  
Leakage Current Maximum  
Zener  
(Note 3.)  
Device  
(Note 1.)  
Current IZM  
@ IZT  
(Note 2.)  
(Volts)  
11  
ZZT @ IZT ZZK @ IZK  
IR  
IZK  
VR  
(mA)  
68  
63  
58  
53  
50  
47  
44  
42  
40  
37  
34  
31  
28  
27  
25  
23  
21  
19  
17  
16  
15  
13  
12  
11  
10  
9.1  
8.2  
7.5  
(Ohms)  
4
4.5  
4.5  
5
5.5  
5.5  
6
(Ohms)  
700  
700  
700  
700  
700  
700  
750  
750  
750  
750  
750  
750  
750  
750  
1000  
1000  
1000  
1000  
1500  
1500  
1500  
2000  
2000  
2000  
2000  
3000  
3000  
3000  
(mA)  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
0.25  
(uA)  
1
1
(Volts)  
Madc  
225  
246  
208  
193  
180  
169  
150  
159  
142  
135  
123  
112  
100  
96  
90  
82  
75  
69  
63  
57  
53  
48  
Ir - mA  
1.82  
1.66  
1.54  
1.43  
1.33  
1.25  
1.18  
1.11  
1.05  
1.00  
0.91  
0.83  
0.74  
0.71  
0.67  
0.61  
0.56  
0.51  
0.45  
0.42  
0.39  
0.36  
0.32  
0.29  
0.27  
0.24  
0.22  
0.20  
CZRA3011  
CZRA3012  
CZRA3013  
CZRA3014  
CZRA3015  
CZRA3016  
CZRA3017  
CZRA3018  
CZRA3019  
CZRA3020  
CZRA3022  
CZRA3024  
CZRA3027  
CZRA3028  
CZRA3030  
CZRA3033  
CZRA3036  
CZRA3039  
CZRA3043  
CZRA3047  
CZRA3051  
CZRA3056  
CZRA3062  
CZRA3068  
CZRA3075  
CZRA3082  
CZRA3091  
CZRA3100  
8.4  
9.1  
9.9  
12  
13  
14  
15  
16  
17  
18  
19  
20  
22  
24  
27  
28  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
0.5  
10.6  
11.4  
12.2  
13  
13.7  
14.4  
15.2  
16.7  
18.2  
20.6  
21  
22.5  
25.1  
27.4  
29.7  
32.7  
35.6  
38.8  
42.6  
47.1  
51.7  
56  
6
7
7
8
9
10  
12  
16  
20  
22  
28  
33  
38  
45  
50  
55  
70  
85  
95  
115  
160  
44  
40  
36  
33  
30  
27  
82  
91  
100  
62.2  
69.2  
76  
NOTE:  
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.  
2. ZENER VOLTAGE (Vz) MEASUREMENT - guarantees the zener voltage when measured at 40 ms +- 10ms  
from the diode body, and an ambient temperature of 25 °C (+8°C , -2°C ).  
3.ZENER IMPEDANCE (Zz) DERIVATION - The zener impedance is derived from the 60 cycle ac voltage,  
which results when an ac current having an rms falue equal to 10% of the dc zener current (IZT or IZK) is  
superimposed on IZT or IZK.  
4. SURGE CURRENT (Ir) NON-REPETITIVE - The rating listed in the electrical characteristics table is  
maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine wave pulse  
of 1/120 second duration superimposed on the test current, IZT, per JEDEC standards, however, actual  
device capability is as described in Figure 3.  
Page 2  
MDS0211015A  
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)  
30  
20  
D = 0.5  
0.2  
10  
7
5
0.1  
3
2
0.05  
0.02  
NOTE BELOW 0.1 SECOND,  
THERMAL RESPONSE  
CURVE IS APPLICABLE TO  
ANY LEAD LENGTH (L)  
1
0.7  
0.5  
SINGLE PULSE  
TJL = JL(t)PPK  
REPETITIVE PULSES TJL =  
JL(t,D)PPK  
0.01  
D = 0  
0.3  
0.0001 0.0002 0.0005 0.001 0.002  
0.005 0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
1
2
5
10  
Fig. 2-TYPICAL THERMAL RESPONSE L,  
1K  
500  
300  
200  
RECTANGULAR NONREPETITIVE  
WAVEFORM TJ = 25°C PRIOR TO  
INITIAL PULSE  
0.1  
0.05  
0.03  
0.02  
100  
50  
0.01  
0.005  
0.003  
0.002  
30  
20  
0.001  
0.0005  
0.0003  
0.0002  
0.0001  
10  
.1  
.2 .3  
5
1
2 3 5  
10  
20  
50  
100  
1
2
5
10  
20  
50  
100  
200  
500  
1K  
P.W. PULSE WIDTH (ms)  
NOMINAL VZ (VOLTS)  
Fig. 3-MAXIMUM SURGE POWER  
Fig. 4-TYPICAL REVERSE LEAKAGE  
8
6
200  
100  
4
2
RANGE  
50  
40  
30  
RANGE  
0
-2  
-4  
20  
3
4
6
8
10  
12  
10  
0
20  
40  
60  
80 100  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
VZ, ZENER VOLTAGE @IZT (VOLTS)  
Fig. 5 - UNITS TO 12 VOLTS  
Fig. 6 - UNITS 10 TO 100 VOLTS  
Page 3  
MDS0211015A  
SSuurrffaaccee MMoouunntt ZZeenneerr DDiiooddee  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
Rating and Characteristic Curves (CZRA3011 Thru CZRA3100)  
100  
100  
50  
30  
20  
10  
50  
30  
20  
10  
5
3
2
5
3
2
1
1
0.5  
0.3  
0.2  
0.5  
0.3  
0.2  
0.1  
0
0.1  
0
1
2
3
4
5
6
7
8
9
10  
10 20 30 40 50 60 70 80 90 100  
VZ, ZENER VOLTAGE (VOLTS)  
VZ, ZENER VOLTAGE (VOLTS)  
80  
70  
60  
50  
40  
30  
20  
10  
0
PRIMARY PATH OF  
CONDUCTION IS THROUGH  
THE CATHODE LEAD  
0
1/8  
1/4  
3/8  
1/2  
5/8  
3/4  
7/8  
1
L, LEAD LENGTH TO HEAT SINK (INCH)  
Fig. 9 -TYPICAL THERMAL RESISTANCE  
Page 4  
MDS0211015A  
Surface Mount Zener Diode  
CCOOMMCCHHIIPP  
www.comchip.com.tw  
∆TJL is the increase in junction temperature above the  
lead temperature and may be found from Figure 2 for a  
train of power pulses or from Figure 10 for dc power.  
∆TJL = θLAPD  
For worst-case design, using expected limits of Iz, limits  
of PD and the extremes of TJ (∆TJL ) may be estimated.  
Changes in voltage, Vz, can then be found from:  
∆V = θVZ ∆TJ  
APPLICATION NOTE:  
Since the actual voltage available from a given zener  
diode is temperature dependent, it is necessary to  
determine junction temperature under any set of  
operating conditions in order to calculate its value. The  
following procedure is recommended:  
Lead Temperature, TL, should be determined from:  
TL = θLAPD + TA  
θLA is the lead-to-ambient thermal resistance (°C/W)  
and PD is the power dissipation. The value for θLA will  
vary and depends on the device mounting method.  
θLA is generally 30-40 °C/W for the various chips and  
tie points in common use and for printed circuit board  
wiring.  
θVZ , the zener voltage temperature coefficient, is  
found from Figures 5 and 6.  
Under high power-pulse operation, the zener voltage  
will vary with time and may also be affected significantly  
be the zener resistance. For best regulation, keep current  
excursions as low as possible.  
Data of Figure 2 should not be used to compute surge  
capability. Surge limitations are given in Figure 3. They  
are lower than would be expected by considering only  
junction temperature, as current crowding effects cause  
temperatures to be extremely high in small spots resulting  
in device degradation should the limits of Figure 3 be  
exceeded.  
The temperature of the lead can also be measured using  
a thermocouple placed on the lead as close as possible to  
the tie point. The thermal mass connected to the tie point  
is normally large enough so that it will not significantly  
respond to heat surges generated in the diode as a result  
of pulsed operation once steady-state conditions are  
achieved. Using the measured value of TL, the junction  
temperature may be determined by:  
TJ = TL + ∆TJL  
MDS0211015A  
Page 5  
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