J/SST174 SERIES
SINGLE P-CHANNEL
JFET SWITCH
Linear Integrated Systems
FEATURES
Direct Replacement For SILICONIX J/SST174 SERIES
LOW ON RESISTANCE
LOW GATE OPERATING CURRENT
ABSOLUTE MAXIMUM RATINGS1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Junction Operating Temperature
Maximum Power Dissipation
Continuous Power Dissipation
Maximum Currents
rDS(on) ≤ 85Ω
ID(off) = 10pA
J SERIES
TO-92
BOTTOM VIEW
SST SERIES
SOT-23
TOP VIEW
1
D
-55 to 150°C
-55 to 135°C
3
D
1
G
2
S
3
G
2
S
350mW
Gate Current
IG = -50mA
Maximum Voltages
Gate to Drain Voltage
Gate to Source Voltage
VGDS = 30V
VGSS = 30V
COMMON ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
BVGSS
VGS(F)
IGSS
CHARACTERISTIC
MIN TYP MAX UNITS CONDITIONS
Gate to Source Breakdown Voltage
Gate to Source Forward Voltage
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
30
IG = 1µA, VDS = 0V
V
-0.7
0.01
0.01
-0.01
IG = -1mA, VDS = 0V
VGS = 20V, VDS = 0V
VDG = -15V, ID = -1mA
VDS = -15V, VGS = 10V
1
nA
IG
ID(off)
-1
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
J/SST174
J/SST175
J/SST176
J/SST177
SYMBOL CHARACTERISTIC
UNITS CONDITIONS
MIN MAX MIN MAX MIN MAX MIN MAX
Gate to Source
VGS(off)
5
10
3
6
1
4
0.8
2.25
-20
V
mA
Ω
VDS = -15V, ID = -10nA
Cutoff Voltage
Drain to Source
IDSS
-20 -135
85
-7
-70
125
-2
-35
250
-1.5
VDS = -15V, VGS = 0V
VGS = 0V, VDS = -0.1V
Saturation Current
Drain to Source
rDS(on)
300
On Resistance
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261
