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HYS72D256320GBR-6-B

型号:

HYS72D256320GBR-6-B

描述:

184引脚均录得双数据速率SDRAM模块[ 184-Pin Registered Double Data Rate SDRAM Module ]

品牌:

INFINEON[ Infineon ]

页数:

45 页

PDF大小:

1161 K

Data Sheet, Rev. 0.5, Dec. 2003  
HYS72D128300GBR-[5/6/7]-B  
HYS72D256320GBR-[5/6/7]-B  
HYS72D128500HR-[7F/7]-B  
HYS72D128321GBR-[5/6/7]-B  
184-Pin Registered Double Data Rate SDRAM Module  
Reg DIMM  
DDR SDRAM  
Green Product  
Lead Containing Product  
Memory Products  
N e v e r s t o p t h i n k i n g .  
Edition 2003-12  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
81669 München, Germany  
© Infineon Technologies AG 2003.  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as a guarantee of  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding  
circuits, descriptions and charts stated herein.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances. For information on the types in  
question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure  
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support  
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain  
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may  
be endangered.  
Data Sheet, Rev. 0.5, Dec. 2003  
HYS72D128300GBR-[5/6/7]-B  
HYS72D256320GBR-[5/6/7]-B  
HYS72D128500HR-[7F/7]-B  
HYS72D128321GBR-[5/6/7]-B  
184-Pin Registered Double Data Rate SDRAM Module  
Reg DIMM  
Memory Products  
N e v e r s t o p t h i n k i n g .  
HYS72D128300GBR-[5/6/7]-B, HYS72D256320GBR-[5/6/7]-B, HYS72D128500HR-[7F/7]-B  
Revision History:  
Rev. 0.5  
2003-12  
Previous Version:  
Page  
Subjects (major changes since last revision)  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
techdoc.mp@infineon.com  
Template: mp_a4_v2.0_2003-06-06.fm  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
1
1.1  
1.2  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
3.1  
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
4
5
6
SPD Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37  
Application Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41  
Data Sheet  
5
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Overview  
1
Overview  
1.1  
Features  
184-pin Registered 8-Byte Dual-In-Line DDR SDRAM Module for “1U” PC, Workstation and Server main  
memory applications  
One rank 128M × 72 organization and two rank 256M × 72 organization  
JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM) with a single + 2.5 V (± 0.2 V) power  
supply and +2.6(± 0.1 V) power supply for DDR400  
Built with DDR SDRAMs in 66-Lead TSOPII and FBGA 60 package  
Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)  
Auto Refresh (CBR) and Self Refresh  
All inputs and outputs SSTL_2 compatible  
Re-drive for all input signals using register and PLL devices.  
Serial Presence Detect with E2PROM  
Low Profile Modules form factor: 133.35 mm × 28.58 mm (1.1”) × 4.00 mm and 133.35 mm × 30.48 mm  
(1.2”) × 4.00 mm  
Based on Jedec standard reference card layout RawCard “B”, “C“ and “D“  
Gold plated contacts  
Table 1  
Part Number Speed Code  
Speed Grade Component  
Module  
Performance  
5  
6  
7  
7F  
Unit  
DDR400B  
DDR333B  
DDR266A  
DDR266  
PC3200–3033 PC2700–2533 PC2100–2033 PC2100–2022 —  
max. Clock Frequency @ CL = 3 fCK3 200  
@ CL = 2.5 fCK2.5 166  
166  
166  
133  
MHz  
MHz  
MHz  
143  
133  
143  
133  
@ CL = 2 fCK2 133  
1.2  
Description  
The HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B are low profile versions of the standard  
Registered DIMM modules with 1.1” inch (28.58) and 1.2” inch (30,40 mm) height for 1U Server Applications. The  
Low Profile DIMM versions are available as 128M × 72 (1 GB) and 256M × 72 (2 GB).  
The memory array is designed with Double Data Rate Synchronous DRAMs for ECC applications. All control and  
address signals are re-driven on the DIMM using register devices and a PLL for the clock distribution. This reduces  
capacitive loading to the system bus, but adds one cycle to the SDRAM timing. A variety of decoupling capacitors  
are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using  
the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are  
available to the customer.  
Data Sheet  
6
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Overview  
Table 2  
Type  
Ordering Information1)2)  
Compliance Code2)  
Description  
SDRAM  
Technology  
PC3200 (CL=3)  
HYS72D128300GBR–5–B  
HYS72D128321GBR–5–B  
HYS72D256320GBR–5–B  
PC3200R–30331–C0 one rank 1 GByte Reg. ECC DIMM 512 MBit (×4)  
PC3200R–30331–B0 two ranks 1 GByte Reg. ECC DIMM 512 MBit (×8)  
PC3200R–30331–D0 two ranks 2 GByte Reg. ECC DIMM 512 MBit (×4)  
PC2700 (CL=2.5)  
HYS72D128300GBR–6–B  
HYS72D128321GBR–6–B  
HYS72D256320GBR–6–B  
PC2700R–25330–C0 one rank 1 GByte Reg. ECC DIMM 512 MBit (×4)  
PC2700R–25330–B0 two ranks 1 GByte Reg. ECC DIMM 512 MBit (×8)  
PC2700R–25330–D0 two ranks 2 GByte Reg. ECC DIMM 512 MBit (×4)  
PC2100 (CL=2)  
HYS72D128300GBR–7–B  
HYS72D128321GBR–7–B  
HYS72D256320GBR–7–B  
PC2100R–20330–C0 one rank 1 GByte Reg. ECC DIMM 512 MBit (×4)  
PC2100R–20330–B0 two ranks1 GByte Reg. ECC DIMM 512 MBit (×8)  
PC2100R–20330–D0 two ranks 2 GByte Reg. ECC DIMM 512 MBit (×4)  
HYS72D128500HR–7F–B  
HYS72D128500HR–7–B  
PC2100R–20220–M  
PC2100R–20330–M  
one rank 1GByte Reg. ECC DIMM 512 MBit (×4)  
one rank 1GByte Reg. ECC DIMM 512 MBit (×4)  
1) All part numbers end with a place code (not shown), designating the silicon-die revision. Reference information available  
on request. Example: HYS72D128300GBR-[5/6/7]-B, indicating Rev.B die are used for SDRAM components.  
2) The Compliance Code is printed on the module labels and describes the speed sort for example “PC2100R”, the latencies  
(for example “20330” means CAS latency = 2.5, tRCD latency = 3 and tRP latency =3 ) and the Raw Card used for this module  
Data Sheet  
7
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
2
Pin Configuration  
Table 3  
Pin Definitions and Functions  
Symbol  
Type  
Function  
A0 - A11,A12  
BA0, BA1  
DQ0 - DQ63  
CB0 - CB7  
Address Inputs  
Bank Selects  
Data Input/Output  
Check Bits (×72 organization only)  
Command Inputs  
Clock Enable  
RAS,CAS,WE  
CKE0, CKE1  
DQS0 - DQS8  
CK0, CK0  
SDRAM low data strobes  
Differential Clock Input  
DM0 - DM8  
DQS9 - DQS17  
SDRAM low data mask/  
high data strobes  
S0 - S1  
VDD  
Chip Selects  
Power (+2.5 V)  
VSS  
Ground  
VDDQ  
VDDID  
VDDSPD  
VREF  
I/O Driver power supply  
VDD Indentification flag  
EEPROM power supply  
I/O reference supply  
Serial bus clock  
SCL  
SDA  
Serial bus data line  
slave address select  
no connect  
SA0 - SA2  
NC  
DU  
don’t use  
RESET  
Reset pin (forces register inputs low)1)  
1) for detailed description of the Power Up and Power Management on DDR Registered DIMMs see the Application Note at  
the end of this datasheet  
Data Sheet  
8
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
Table 4  
PIN#  
1
Pin Configuration1)  
Symbol  
VREF  
DQ0  
VSS  
PIN#  
48  
Symbol  
A0  
PIN#  
94  
Symbol  
DQ4  
DQ5  
VDDQ  
DQS9  
DQ6  
DQ7  
VSS  
PIN#  
141  
142  
143  
144  
Symbol  
A10  
2
49  
CB2  
95  
CB6  
3
50  
VSS  
96  
VDDQ  
CB7  
4
DQ1  
DQS0  
DQ2  
VDD  
51  
CB3  
97  
5
52  
BA1  
98  
KEY  
6
KEY  
DQ32  
VDDQ  
DQ33  
DQS4  
DQ34  
VSS  
99  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
169  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
VSS  
7
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
121  
122  
123  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
DQ36  
DQ37  
VDD  
8
DQ3  
NC  
NC  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
RESET  
VSS  
NC  
DM4/DQS13  
DQ38  
DQ39  
VSS  
VDDQ  
DQ12  
DQ13  
DQS10  
VDD  
DQ8  
DQ9  
DQS1  
VDDQ  
DU  
BA0  
DQ35  
DQ40  
VDDQ  
WE  
DQ44  
RAS  
DQ14  
DQ15  
CKE1  
VDDQ  
NC  
DQ45  
VDDQ  
S0  
DU  
VSS  
DQ41  
CAS  
VSS  
DQ10  
DQ11  
CKE0  
VDDQ  
DQ16  
DQ17  
DQS2  
VSS  
S1  
DQS14  
VSS  
DQS5  
DQ42  
DQ43  
VDD  
DQ20  
NC / A12  
VSS  
DQ46  
DQ47  
NC  
DQ21  
A11  
NC  
VDDQ  
DQ52  
DQ53  
NC  
DQ48  
DQ49  
VSS  
DQS11  
VDD  
A9  
DQ18  
A7  
DQ22  
A8  
DU  
VDD  
VDDQ  
DQ19  
A5  
DU  
DQ23  
VSS  
DQS15  
DQ54  
DQ55  
VDDQ  
NC  
VDDQ  
DQS6  
DQ50  
DQ51  
VSS  
A6  
DQ24  
VSS  
DQ28  
DQ29  
VDDQ  
DQS12  
A3  
DQ25  
DQS3  
A4  
DQ60  
DQ61  
VSS  
VDDID  
DQ56  
DQ57  
VDD  
VDD  
DQ30  
VSS  
DQS16  
DQ62  
DQ63  
VDDQ  
DQ26  
DQ27  
A2  
DQS7  
DQ58  
DQ31  
CB4  
Data Sheet  
9
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
Table 4  
PIN#  
42  
Pin Configuration1) (cont’d)  
Symbol  
VSS  
PIN#  
88  
Symbol  
DQ59  
VSS  
PIN#  
135  
136  
137  
138  
139  
140  
Symbol  
CB5  
PIN#  
181  
182  
183  
184  
Symbol  
SA0  
SA1  
SA2  
VDDSPD  
43  
A1  
89  
VDDQ  
CK0  
44  
CB0  
CB1  
VDD  
90  
NC  
45  
91  
SDA  
SCL  
VSS  
CK0  
46  
92  
VSS  
47  
DQS8  
93  
DQS17  
1) A12 is used for 256Mbit and 512Mbit based modules only.  
Table 5  
Address Format  
Density Organization Memory  
Ranks  
SDRAMs # of  
SDRAMs  
128M × 4 18  
# of row/bank/ Refresh Period Interval  
column bits  
1 GB  
1 GB  
2 GB  
128M x 72  
128M x 72  
256M x 72  
1
2
2
13/2/12  
13/2/11  
13/2/12  
8K  
8K  
8K  
64 ms 7.8 µs  
64 ms 7.8 µs  
64 ms 7.8 µs  
64M × 8 18  
128M × 4 36  
Data Sheet  
10  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
VSS  
RS0  
DQS0  
DM0/DQS9  
DQS  
I/O 0  
S
DM  
DQS  
I/O 0  
S
DM  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D0  
D9  
DQS1  
DQS2  
DQS3  
DM1/DQS10  
DM  
DM  
DM  
DQS  
S
DM  
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ8  
DQ12  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ9  
DQ13  
DQ14  
DQ15  
D1  
D10  
DQ10  
DQ11  
DM2/DQS11  
DQS  
S
DQS  
S
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
D11  
D2  
DM3/DQS12  
DM  
S
S
DQS  
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D12  
D3  
DQS4  
DM4/DQS13  
V
DDSPD  
Serial PD  
D0-D17  
D0-D17  
DQS  
DM  
DM  
DM  
S
S
DM  
DM  
DQS  
VDDQ  
VDD  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D4  
D13  
VREF  
VSS  
D0-D17  
D0-D17  
DQS5  
DQS6  
DM5/DQS14  
DQS  
S
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
VDDID  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
Strap: see Note 4  
D5  
D14  
Serial PD  
DM6/DQS15  
S
DM  
DQS  
S
DQS  
SCL  
SDA  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
A0 A1 A2  
WP  
D15  
D6  
SA0 SA1  
SA2  
DQS7  
DQS8  
DM7/DQS16  
DM  
DM  
DM  
S
DQS  
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
Notes:  
1. DQ-to-I/O wiring may be changed  
within a byte.  
2. DQ/DQS/DM/CKE/S relationships  
must be maintained as shown.  
3. DQ/DQS resistors should be 22  
Ohms.  
D7  
D16  
DM8/DQS17  
DQS  
S
S
DM  
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D17  
D8  
4. V  
strap connections  
DDID  
(for memory device V , V  
DD  
):  
DDQ  
STRAP OUT (OPEN): V = V  
DD  
DDQ  
STRAP IN (V ): V V .  
DDQ  
5. Address and control resistors  
should be 22 Ohms.  
6. A13 is not wired for raw card B.  
SS  
DD  
R
E
G
I
S
T
E
R
S0  
RS0 -> CS : SDRAMs D0-D17  
BA0-BA1  
A0-A136  
RAS  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D17  
RA0-RA136 -> A0-A136: SDRAMs D0-D17  
RRAS -> RAS: SDRAMs D0-D17  
RCAS -> CAS: SDRAMs D0-D17  
RCKE0A -> CKE: SDRAMs D0-D17  
RWE -> WE: SDRAMs D0-D17  
CAS  
CKE0  
WE  
CK0, CK0 --------- PLL*  
* Wire per Clock Loading Table/Wiring Diagrams  
PCK  
PCK  
RESET  
Figure 1  
Block Diagram: 1 Rank 128M × 72 DDR SDRAM DIMM HYS72D128[300/500]GBR–[5/6/7/7F]–B  
Data Sheet  
11  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
RS1  
RS0  
DQS0  
DM0/DQS9  
DQS4  
DM4/DQS13  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS  
CS  
D0  
CS  
D9  
DQS  
DQS  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DM  
CS  
D4  
CS  
DQ0  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
D13  
DQS1  
DM1/DQS10  
DQS5  
DM5/DQS14  
DM  
DQS  
DQS  
CS  
D1  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
CS  
DQS  
DM  
I/O 0  
DM  
I/O 0  
CS  
D5  
CS  
DQS  
DQ8  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ40  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ9  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
D10  
D14  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQS6  
DM6/DQS15  
DQS2  
DM2/DQS11  
DQS  
DM  
CS  
CS DQS  
D2  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
CS DQS  
D6  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
CS DQS  
D15  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ16  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
D11  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS3  
DM3/DQS12  
DQS7  
DM7  
DQS16  
DM  
CS DQS  
D3  
DM  
I/O 0  
CS  
DQS  
DM  
I/O 0  
CS DQS  
D7  
DM  
I/O 0  
CS DQS  
D16  
I/O 0  
DQ24  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
D12  
DQS8  
DM8/DQS17  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CS DQS  
D8  
CS  
CB0  
V
DDSPD  
Serial PD  
D0-D17  
D0-D17  
D0-D17  
D0-D17  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
D17  
Serial PD  
VDDQ  
SCL  
SDA  
VDD  
WP A0 A1 A2  
SA0 SA1 SA2  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
VREF  
VSS  
VDDID  
Strap: see Note 4  
CK0, CK0 --------- PLL*  
S0  
RS0 -> CS : SDRAMs D0-D8  
RS1 -> CS : SDRAMs D9-D17  
* Wire per Clock Loading Table/Wiring Diagrams  
Notes:  
S1  
R
E
G
I
S
T
E
R
BA0-BA1  
A0-A137  
RAS  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D17  
RA0-RA137 -> A0-A137: SDRAMs D0-D17  
RRAS -> RAS: SDRAMs D0-D17  
RCAS -> CAS: SDRAMs D0-D17  
RCKE0 -> CKE: SDRAMs D0-D8  
RCKE1 -> CKE: SDRAMs D9-D17  
RWE -> WE: SDRAMs D0-D17  
1. DQ-to-I/O wiring may be changed within a byte.  
2. DQ/DQS/DM/CKE/S relationships must be maintained as shown.  
3. DQ/DQS resistors should be 22 Ohms.  
CAS  
4. VDDID strap connections (for memory device VDD, VDDQ):  
CKE0  
CKE1  
WE  
STRAP OUT (OPEN): VDD = VDDQ  
STRAP IN (VSS): VDD VDDQ  
.
5. RS0 and RS1 alternate between the back and front sides of the DIMM.  
6. Address and control resistors should be 22 Ohms.  
7. A13 is not wired for raw card A.  
PCK  
PCK  
RESET  
Figure 2  
Block Diagram – 2 Ranks 64M × 72 DDR SDRAM HYS72D128321GBR-[5/6/7]–B  
Data Sheet  
12  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Pin Configuration  
VSS  
RS1  
RS0  
DM0/DQS9  
DQS0  
DQS  
I/O 0  
CS  
D0  
DM  
DQS  
I/O 3  
CS  
D18  
DM  
DQS  
I/O 0  
DQS  
I/O 0  
CS  
D9  
CS  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 3  
I/O 2  
I/O 1  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D27  
DQS1  
DQS2  
DQS3  
DM1/DQS10  
DQS  
DM  
DQS  
DM  
DQS  
DQS  
CS  
D1  
CS  
CS  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ8  
DQ12  
DQ13  
DQ14  
DQ15  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ9  
D19  
D10  
D28  
DQ10  
DQ11  
DM2/DQS11  
DQS  
DQS  
I/O 0  
DQS  
DQS  
DM  
DM  
CS  
CS  
CS  
D2  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
I/O 1  
I/O 2  
I/O 3  
D11  
D29  
D20  
DM3/DQS12  
DM  
DM  
DQS  
DQS  
I/O 0  
DQS  
DQS  
CS  
CS  
CS  
D3  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D12  
D30  
D21  
DQS4  
DM4/DQS13  
DQS  
DQS  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DQS  
DQS  
I/O 0  
CS  
CS  
CS  
D4  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D22  
D13  
D31  
DQS5  
DQS6  
DQS7  
DM5/DQS14  
DQS  
DQS  
DM  
DM  
DQS  
DQS  
I/O 0  
CS  
D5  
CS  
CS  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O 1  
I/O 2  
I/O 3  
D23  
D14  
D32  
DM6/DQS15  
DM  
DM  
DQS  
DQS  
I/O 0  
DQS  
DQS  
CS  
D6  
CS  
CS  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D15  
D33  
D24  
DM7/DQS16  
DM  
DQS  
DM  
DM  
DQS  
I/O 0  
DQS  
DQS  
DM  
CS  
CS  
CS  
D7  
CS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D25  
D16  
D34  
DQS8  
DM8/DQS17  
DM  
DM  
DQS  
DQS  
I/O 0  
DQS  
DQS  
CS  
D8  
CS  
CS DM  
CS DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D26  
D17  
D35  
V
DDSPD  
Serial PD  
D0-D35  
CK0, CK0 --------- PLL*  
* Wire per Clock Loading Table/Wiring Diagrams  
Serial PD  
VDDQ  
VDD  
SCL  
SDA  
D0-D35  
D0-D35  
D0-D35  
VREF  
VSS  
A0 A1 A2  
WP  
S0  
S1  
RSO -> CS : SDRAMs D0-D17  
R
RS1 -> CS: SDRAMs D18-D35  
SA0 SA1 SA2  
VDDID  
Strap: see Note 4  
E
BA0-BA1  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D35  
RA0-RA13 -> A0-A13: SDRAMs D0- D35  
RRAS -> RAS: SDRAMs D0-D35  
G
I
Notes:  
1. DQ-to-I/O wiring may be changed within a byte.  
A0-A13  
RAS  
S
T
E
R
2. DQ/DQS/DM/CKE/S relationships must be maintained as shown.  
3. DQ/DQS resistors should be 22 Ohms.  
CAS  
RCAS -> CAS: SDRAMs D0-D35  
4. VDDID strap connections (for memory device VDD, VDDQ):  
CKE0  
CKE1  
RCKE0 -> CKE: SDRAMs D0-D17  
RCKE1 -> CKE: SDRAMs D18-D35  
STRAP OUT (OPEN): VDD = VDDQ  
STRAP IN (VSS): VDD VDDQ  
.
RWE -> WE: SDRAMs D0-D35  
WE  
5. Address and control resistors should be 22 Ohms.  
6. Each Chip Select and CKE pair alternate between decks for ther-  
mal enhancement.  
PCK  
PCK  
RESET  
Figure 3  
Block Diagram – 2 Ranks 128M × 72 DDR SDRAM HYS72D256320GBR-[5/6/7]–B  
Data Sheet  
13  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
3
Electrical Characteristics  
3.1  
Operating Conditions  
Table 6  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
typ.  
Unit Note/ Test  
Condition  
min.  
VIN, VOUT –0.5  
max.  
Voltage on I/O pins relative to VSS  
VDDQ  
+
V
0.5  
Voltage on inputs relative to VSS  
Voltage on VDD supply relative to VSS  
Voltage on VDDQ supply relative to VSS  
Operating temperature (ambient)  
Storage temperature (plastic)  
VIN  
–1  
–1  
–1  
0
+3.6  
+3.6  
+3.6  
+70  
+150  
V
VDD  
VDDQ  
TA  
V
V
°C  
°C  
W
mA  
TSTG  
PD  
-55  
Power dissipation (per SDRAM component)  
Short circuit output current  
1
IOUT  
50  
Attention: Permanent damage to the device may occur if “Absolute Maximum Ratings” are exceeded. This  
is a stress rating only, and functional operation should be restricted to recommended operation  
conditions. Exposure to absolute maximum rating conditions for extended periods of time may  
affect device reliability and exceeding only one of the values may cause irreversible damage to  
the integrated circuit.  
Table 7  
Electrical Characteristics and DC Operating Conditions  
Parameter  
Symbol  
Values  
Typ.  
Unit Note/Test Condition 1)  
Min.  
2.3  
2.5  
2.3  
2.5  
Max.  
2.7  
2.7  
2.7  
2.7  
3.6  
0
Device Supply Voltage  
Device Supply Voltage  
Output Supply Voltage  
Output Supply Voltage  
EEPROM supply voltage  
VDD  
2.5  
2.6  
2.5  
2.6  
2.5  
V
V
V
V
V
V
fCK 166 MHz  
CK > 166 MHz 2)  
fCK 166 MHz 3)  
CK > 166 MHz 2)3)  
VDD  
f
VDDQ  
VDDQ  
f
VDDSPD 2.3  
Supply Voltage, I/O Supply VSS,  
0
Voltage  
VSSQ  
VREF  
VTT  
4)  
5)  
Input Reference Voltage  
0.49 × VDDQ 0.5 × VDDQ 0.51 × VDDQ  
V
I/O Termination Voltage  
(System)  
V
REF – 0.04  
V
REF + 0.04 V  
8)  
8)  
8)  
Input High (Logic1) Voltage VIH(DC)  
Input Low (Logic0) Voltage VIL(DC)  
V
REF + 0.15  
V
V
V
DDQ + 0.3  
V
–0.3  
REF – 0.15 V  
Input Voltage Level,  
CK and CK Inputs  
VIN(DC) –0.3  
DDQ + 0.3  
DDQ + 0.6  
V
8)6)  
7)  
Input Differential Voltage, VID(DC) 0.36  
CK and CK Inputs  
V
V
VI-Matching Pull-up  
Current to Pull-down  
Current  
VIRatio  
0.71  
1.4  
Data Sheet  
14  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 7  
Electrical Characteristics and DC Operating Conditions (cont’d)  
Parameter  
Symbol  
Values  
Typ.  
Unit Note/Test Condition 1)  
Min.  
Max.  
Input Leakage Current  
Output Leakage Current  
II  
–2  
2
µA Any input 0 V VIN VDD;  
All other pins not under test  
= 0 V 8)9)  
IOZ  
IOH  
IOL  
–5  
5
µA DQs are disabled;  
0 V VOUT VDDQ  
Output High Current,  
Normal Strength Driver  
–16.2  
mA  
V
OUT = 1.95 V  
Output Low  
16.2  
mA  
V
OUT = 0.35 V  
Current, Normal Strength  
Driver  
1) 0 °C TA 70 °C  
2) DDR400 conditions apply for all clock frequencies above 166 MHz  
3) Under all conditions, VDDQ must be less than or equal to VDD  
4) Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC). VREF is also expected to track noise variations in VDDQ  
5) VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal  
to VREF, and must track variations in the DC level of VREF  
.
.
.
6) VID is the magnitude of the difference between the input level on CK and the input level on CK.  
7) The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the entire  
temperature and voltage range, for device drain to source voltage from 0.25 to 1.0 V. For a given output, it represents the  
maximum difference between pull-up and pull-down drivers due to process variation.  
8) Inputs are not recognized as valid until VREF stabilizes.  
9) Values are shown per DDR SDRAM component  
Data Sheet  
15  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 8  
IDD Conditions  
Parameter  
Symbol  
Operating Current 0  
IDD0  
one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;  
address and control inputs changing once every two clock cycles.  
Operating Current 1  
IDD1  
one bank; active/read/precharge; Burst Length = 4; see component data sheet.  
Precharge Power-Down Standby Current  
all banks idle; power-down mode; CKE VIL,MAX  
IDD2P  
IDD2F  
Precharge Floating Standby Current  
CS VIH,,MIN, all banks idle; CKE VIH,MIN  
;
address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.  
Precharge Quiet Standby Current  
IDD2Q  
CS VIHMIN, all banks idle; CKE VIH,MIN; VIN = VREF for DQ, DQS and DM;  
address and other control inputs stable at VIH,MIN or VIL,MAX  
.
Active Power-Down Standby Current  
one bank active; power-down mode; CKE VILMAX; VIN = VREF for DQ, DQS and DM.  
IDD3P  
IDD3N  
Active Standby Current  
one bank active; CS VIH,MIN; CKE VIH,MIN; tRC = tRAS,MAX  
DQ, DM and DQS inputs changing twice per clock cycle;  
address and control inputs changing once per clock cycle.  
;
Operating Current Read  
IDD4R  
one bank active; Burst Length = 2; reads; continuous burst;  
address and control inputs changing once per clock cycle;  
50% of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA  
Operating Current Write  
IDD4W  
one bank active; Burst Length = 2; writes; continuous burst;  
address and control inputs changing once per clock cycle;  
50% of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B  
Auto-Refresh Current  
IDD5  
IDD6  
IDD7  
t
RC = tRFCMIN, burst refresh  
Self-Refresh Current  
CKE 0.2 V; external clock on  
Operating Current 7  
four bank interleaving with Burst Length = 4; see component data sheet.  
Data Sheet  
16  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 9  
IDD Specification for –7  
Unit  
Note 1)2)  
1 GB  
×72  
1 GB  
×72  
1 GB  
×72  
2 GB  
×72  
1 Rank  
–7F  
1 Rank  
–7  
2 Ranks  
–7  
2 Ranks  
–7  
Symbol  
IDD0  
typ.  
max.  
2452  
2746  
448  
typ.  
max.  
2298  
2568  
448  
typ.  
max.  
1776  
1911  
448  
typ.  
max.  
2964  
3234  
520  
3)  
2158  
2354  
430  
2028  
2208  
430  
1587  
1677  
430  
2586  
2766  
484  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
3)4)  
5)  
IDD1  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
5)  
736  
808  
736  
808  
736  
808  
1096  
916  
1240  
1132  
844  
5)  
646  
754  
646  
754  
646  
754  
5)  
538  
610  
538  
610  
538  
610  
700  
5)  
934  
1042  
2460  
2554  
5263  
468  
934  
1042  
2388  
2478  
4998  
468  
934  
1042  
1821  
1866  
3126  
468  
1492  
2676  
2766  
4836  
451  
1708  
3054  
3144  
5664  
560  
3)4)  
3)  
2179  
2273  
4499  
414  
2118  
2208  
4278  
414  
1632  
1677  
2712  
414  
3)  
5)  
IDD6  
3)4)  
IDD7  
5493  
6376  
5088  
5898  
3117  
3576  
5646  
6564  
1) DRAM component currents only  
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C  
3) The module IDDx values are calculated from the component IDDx data sheet values as:  
m × IDDx[component] + n × IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank modules  
4) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load  
conditions  
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) × IDDx[component]  
Data Sheet  
17  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 10  
IDD Specification for –6  
Unit  
Note 1)2)  
1GB  
×72  
1 GB  
×72  
2 GB  
×72  
1 Rank  
–6  
2 Ranks  
–6  
2 Ranks  
–6  
Symbol  
IDD0  
typ.  
max.  
2710  
2980  
502  
typ.  
max.  
2116  
2251  
502  
typ.  
max.  
3502  
3772  
574  
3)  
2350  
2620  
484  
1873  
2008  
484  
3016  
3286  
538  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
3)4)  
5)  
IDD1  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
5)  
880  
970  
880  
970  
1330  
1042  
826  
1510  
1294  
970  
5)  
736  
862  
736  
862  
5)  
628  
700  
628  
700  
5)  
1096  
2620  
2710  
4690  
475  
1222  
2980  
3070  
5500  
523.6  
7300  
1096  
2008  
2053  
3043  
475  
1222  
2251  
2296  
3511  
523.6  
4411  
1762  
3286  
3376  
5356  
520  
2014  
3772  
3862  
6292  
617.2  
8092  
3)4)  
3)  
3)  
5)  
IDD6  
3)4)  
IDD7  
6310  
3853  
6976  
1) DRAM component currents only  
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C  
3) The module IDDx values are calculated from the component IDDx data sheet values as:  
m × IDDx[component] + n × IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank  
modules  
4) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on  
load conditions  
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) × IDDx[component]  
Data Sheet  
18  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 11  
IDD Specification for –5  
Unit  
Note 1)2)  
1 GB  
×72  
1 GB  
×72  
2 GB  
×72  
1 Rank  
–5  
2 Ranks  
–5  
2 Ranks  
–5  
Symbol  
IDD0  
typ.  
max.  
3040  
3400  
734  
typ.  
max.  
3940  
4300  
824  
typ.  
max.  
3940  
4300  
824  
3)  
2680  
2950  
698  
3436  
3706  
752  
3436  
3706  
752  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
3)4)  
5)  
IDD1  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
5)  
1184  
986  
1292  
1112  
932  
1724  
1328  
1076  
2156  
3796  
3886  
6046  
748.4  
7846  
1940  
1580  
1220  
2444  
4390  
4480  
7090  
831.2  
9160  
1724  
1328  
1076  
2156  
3796  
3886  
6046  
748.4  
7846  
1940  
1580  
1220  
2444  
4390  
4480  
7090  
831.2  
9160  
5)  
5)  
860  
5)  
1400  
3040  
3130  
5290  
696.2  
7090  
1544  
3490  
3580  
6190  
737.6  
8260  
3)4)  
3)  
3)  
5)  
IDD6  
3)4)  
IDD7  
1) DRAM component currents only  
2) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C  
3) The module IDDx values are calculated from the component IDDx data sheet values as:  
m × IDDx[component] + n × IDD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank  
modules  
4) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on  
load conditions  
5) The module IDDx values are calculated from the corrponent IDDx data sheet values as: (m + n) × IDDx[component]  
Data Sheet  
19  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 12  
AC Timing - Absolute Specifications –6/–5  
Parameter  
Symbol  
–5  
–6  
Unit Note/ Test  
Condition 1)  
DDR400B  
DDR333  
Min. Max.  
–0.6 +0.6  
–0.5 +0.5  
0.45 0.55  
0.45 0.55  
Min. Max.  
–0.7 +0.7  
–0.6 +0.6  
0.45 0.55  
0.45 0.55  
2)3)4)5)  
DQ output access time from CK/CK  
DQS output access time from CK/CK  
CK high-level width  
tAC  
ns  
2)3)4)5)  
tDQSCK  
tCH  
ns  
2)3)4)5)  
tCK  
2)3)4)5)  
CK low-level width  
tCL  
tCK  
2)3)4)5)  
Clock Half Period  
tHP  
min. (tCL, tCH) min. (tCL, tCH) ns  
Clock cycle time  
tCK  
5
12  
12  
12  
12  
12  
ns  
ns  
ns  
ns  
ns  
ns  
CL = 3.0 2)3)4)5)  
CL = 2.5 2)3)4)5)  
CL = 2.0 2)3)4)5)  
6
6
7.5  
0.4  
0.4  
2.2  
7.5  
0.45  
0.45  
2.2  
2)3)4)5)  
DQ and DM input hold time  
DQ and DM input setup time  
tDH  
tDS  
2)3)4)5)  
2)3)4)5)6)  
Control and Addr. input pulse width (each  
input)  
tIPW  
2)3)4)5)6)  
2)3)4)5)7)  
2)3)4)5)7)  
2)3)4)5)  
DQ and DM input pulse width (each input)  
tDIPW  
1.75  
1.75  
ns  
ns  
ns  
tCK  
ns  
ns  
ns  
ns  
ns  
tCK  
tCK  
Data-out high-impedance time from CK/CK tHZ  
Data-out low-impedance time from CK/CK tLZ  
Write command to 1st DQS latching transition tDQSS  
–0.6 +0.6  
–0.6 +0.6  
0.75 1.25  
–0.7 +0.7  
–0.7 +0.7  
0.75 1.25  
DQS-DQ skew (DQS and associated DQ  
signals)  
tDQSQ  
tQHS  
tQH  
+0.40  
+0.40  
+0.50  
+0.50  
+0.40  
+0.45  
+0.50  
+0.55  
TFBGA 2)3)4)5)  
TSOPII 2)3)4)5)  
TFBGA 2)3)4)5)  
TSOPII 2)3)4)5)  
2)3)4)5)  
Data hold skew factor  
DQ/DQS output hold time  
t
HP tQHS  
t
HP tQHS  
2)3)4)5)  
2)3)4)5)  
DQS input low (high) pulse width (write cycle) tDQSL,H  
0.35  
0.2  
0.35  
0.2  
DQS falling edge to CK setup time (write  
cycle)  
tDSS  
2)3)4)5)  
DQS falling edge hold time from CK (write  
cycle)  
tDSH  
0.2  
0.2  
tCK  
2)3)4)5)  
Mode register set command cycle time  
Write preamble setup time  
Write postamble  
tMRD  
2
0
2
0
tCK  
ns  
2)3)4)5)8)  
2)3)4)5)9)  
2)3)4)5)  
tWPRES  
tWPST  
tWPRE  
tIS  
0.40 0.60  
0.40 0.60  
tCK  
tCK  
ns  
Write preamble  
0.25  
0.6  
0.25  
0.75  
Address and control input setup time  
fast slew rate  
3)4)5)6)10)  
0.7  
0.6  
0.7  
0.9  
1.1  
0.8  
0.75  
0.8  
1.1  
ns  
ns  
ns  
slow slew rate  
3)4)5)6)10)  
Address and control input hold time  
tIH  
fast slew rate  
3)4)5)6)10)  
slow slew rate  
3)4)5)6)10)  
2)3)4)5)  
2)3)4)5)  
Read preamble  
Read postamble  
tRPRE  
tRPST  
0.9  
tCK  
tCK  
0.40 0.60  
0.40 0.60  
Data Sheet  
20  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 12  
AC Timing - Absolute Specifications –6/–5 (cont’d)  
Parameter  
Symbol  
–5  
–6  
Unit Note/ Test  
Condition 1)  
DDR400B  
DDR333  
Min. Max.  
Min. Max.  
2)3)4)5)  
Active to Precharge command  
tRAS  
tRC  
40  
55  
70E+3 42  
70E+3 ns  
2)3)4)5)  
Active to Active/Auto-refresh command  
period  
60  
ns  
2)3)4)5)  
Auto-refresh to Active/Auto-refresh  
command period  
tRFC  
65  
72  
ns  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)11)  
Active to Read or Write delay  
Precharge command period  
Active to Autoprecharge delay  
Active bank A to Active bank B command  
Write recovery time  
tRCD  
tRP  
15  
15  
15  
10  
15  
18  
18  
18  
12  
15  
ns  
ns  
ns  
ns  
ns  
tCK  
tRAP  
tRRD  
tWR  
Auto precharge write recovery + precharge tDAL  
time  
(tWR/tCK) +  
(tRP/tCK)  
(tWR/tCK) +  
(tRP/tCK)  
2)3)4)5)  
Internal write to read command delay  
Exit self-refresh to non-read command  
Exit self-refresh to read command  
Average Periodic Refresh Interval  
tWTR  
tXSNR  
tXSRD  
tREFI  
1
1
tCK  
ns  
tCK  
µs  
2)3)4)5)  
75  
75  
2)3)4)5)  
200  
200  
2)3)4)5)12)  
7.8  
7.8  
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V  
(DDR400)  
2) Input slew rate 1 V/ns for DDR400, DDR333  
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference  
level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.  
4) Inputs are not recognized as valid until VREF stabilizes.  
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.  
6) These parameters guarantee device timing, but they are not necessarily tested on each device.  
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred  
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.  
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were  
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,  
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS  
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but  
system performance (bus turnaround) degrades accordingly.  
10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,  
measured between VOH(ac) and VOL(ac)  
.
11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock  
cycle time.  
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.  
Data Sheet  
21  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 13  
AC Timing - Absolute Specifications –7/–7F  
Parameter  
Symbol  
–7F  
–7  
Unit Note/ Test  
Condition  
DDR266  
DDR266A  
1)1)  
Min. Max.  
Min. Max.  
–0.75 +0.75  
–0.75 +0.75  
0.45 0.55  
0.45 0.55  
2)2)3)3)4)4)5)5)  
DQ output access time from CK/CK  
DQS output access time from CK/CK  
CK high-level width  
tAC  
–0.75 +0.75  
ns  
2)3)4)5)  
tDQSCK –0.75 +0.75  
ns  
2)3)4)5)  
tCH  
tCL  
tHP  
tCK  
0.45 0.55  
0.45 0.55  
min. (tCL, tCH)  
tCK  
2)3)4)5)  
CK low-level width  
tCK  
2)3)4)5)  
Clock Half Period  
min. (tCL, tCH) ns  
Clock cycle time  
7.5  
12  
7.5  
12  
ns  
CL = 2.5  
2)3)4)5)  
7.5  
12  
7.5  
12  
ns  
CL = 2.0  
2)3)4)5)  
2)3)4)5)  
DQ and DM input hold time  
DQ and DM input setup time  
tDH  
tDS  
0.5  
0.5  
ns  
ns  
ns  
ns  
ns  
ns  
tCK  
ns  
2)3)4)5)  
0.5  
0.5  
2)3)4)5)6)  
2)3)4)5)6)  
2)3)4)5)7)  
2)3)4)5)7)  
2)3)4)5)  
Control and Addr. input pulse width (each input) tIPW  
2.2  
2.2  
DQ and DM input pulse width (each input)  
Data-out high-impedance time from CK/CK  
Data-out low-impedance time from CK/CK  
Write command to 1st DQS latching transition  
tDIPW  
tHZ  
1.75  
1.75  
–0.75 +0.75  
–0.75 +0.75  
0.75 1.25  
–0.75 +0.75  
–0.75 +0.75  
0.75 1.25  
tLZ  
tDQSS  
tDQSQ  
DQS-DQ skew (DQS and associated DQ  
signals)  
+0.5  
+0.5  
TFBGA  
2)3)4)5)  
+0.5  
+0.5  
ns  
ns  
ns  
TSOPII  
2)3)4)5)  
Data hold skew factor  
tQHS  
+0.75  
+0.75  
+0.75  
+0.75  
TFBGA  
2)3)4)5)  
TSOPII  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)8)  
2)3)4)5)9)  
2)3)4)5)  
DQ/DQS output hold time  
tQH  
t
HP tQHS  
t
HP tQHS  
ns  
DQS input low (high) pulse width (write cycle)  
tDQSL,H 0.35  
0.35  
0.2  
0.2  
2
tCK  
tCK  
tCK  
tCK  
ns  
DQS falling edge to CK setup time (write cycle) tDSS  
DQS falling edge hold time from CK (write cycle) tDSH  
0.2  
0.2  
2
Mode register set command cycle time  
Write preamble setup time  
Write postamble  
tMRD  
tWPRES  
tWPST  
tWPRE  
tIS  
0
0
0.40 0.60  
0.40 0.60  
tCK  
tCK  
ns  
Write preamble  
0.25  
0.9  
0.25  
0.9  
Address and control input setup time  
fast slew  
rate  
3)4)5)6)10)  
0.9  
0.9  
ns  
slow slew  
rate  
3)4)5)6)10)  
Data Sheet  
22  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
Table 13  
AC Timing - Absolute Specifications –7/–7F  
Parameter  
Symbol  
–7F  
–7  
Unit Note/ Test  
Condition  
DDR266  
DDR266A  
Min. Max.  
1)1)  
Min. Max.  
Address and control input hold time  
tIH  
0.9  
1.0  
0.9  
0.9  
1.0  
0.9  
ns  
ns  
fast slew  
rate  
3)4)5)6)10)  
slow slew  
rate  
3)4)5)6)10)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
Read preamble  
tRPRE  
tRPST  
tRAS  
1.1  
1.1  
tCK  
tCK  
Read postamble  
0.40 0.60  
0.40 0.60  
120E+3 45  
Active to Precharge command  
45  
65  
75  
120E+3 ns  
Active to Active/Auto-refresh command period tRC  
65  
75  
ns  
ns  
Auto-refresh to Active/Auto-refresh command  
period  
tRFC  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)11)  
Active to Read or Write delay  
Precharge command period  
Active to Autoprecharge delay  
Active bank A to Active bank B command  
Write recovery time  
tRCD  
tRP  
20  
20  
20  
15  
15  
20  
20  
20  
15  
15  
ns  
ns  
ns  
ns  
ns  
tCK  
tRAP  
tRRD  
tWR  
Auto precharge write recovery + precharge time tDAL  
(tWR/tCK) +  
(tRP/tCK)  
(tWR/tCK) +  
(tRP/tCK)  
2)3)4)5)  
Internal write to read command delay  
Exit self-refresh to non-read command  
Exit self-refresh to read command  
Average Periodic Refresh Interval  
tWTR  
tXSNR  
tXSRD  
tREFI  
1
1
tCK  
ns  
2)3)4)5)  
75  
75  
2)3)4)5)  
200  
200  
tCK  
µs  
2)3)4)5)12)  
7.8  
7.8  
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V (DDR333); VDDQ = 2.6 V ± 0.1 V, VDD = +2.6 V ± 0.1 V  
(DDR400)  
2) Input slew rate 1 V/ns for DDR400, DDR333  
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference  
level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.  
4) Inputs are not recognized as valid until VREF stabilizes.  
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.  
6) These parameters guarantee device timing, but they are not necessarily tested on each device.  
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred  
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.  
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were  
previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in progress,  
DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS  
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but  
system performance (bus turnaround) degrades accordingly.  
10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,  
measured between VOH(ac) and VOL(ac)  
.
Data Sheet  
23  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Electrical Characteristics  
11) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock  
cycle time.  
12) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.  
Data Sheet  
24  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
4
SPD Contents  
Table 14  
SPD Codes for HYS72D[128/256][300/321/320]GBR–5–B  
1 GB  
×72  
1 GB  
×72  
2 GB  
×72  
1 Rank  
–5  
2 Ranks  
–5  
2 Ranks  
–5  
Label Code  
PC3200R–30331 PC3200R–30331 PC3200R–30331  
JEDEC SPD Revision  
Description  
Rev. 1.0  
HEX  
80  
Rev. 1.0  
HEX  
80  
Rev. 1.0  
HEX  
80  
Byte#  
0
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
1
08  
08  
08  
2
07  
07  
07  
3
0D  
0C  
01  
0D  
0B  
02  
0D  
0C  
02  
4
5
6
48  
48  
48  
7
Data Width (MSB)  
00  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support (non- / ECC)  
Refresh Rate  
04  
04  
04  
9
50  
50  
50  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
50  
50  
50  
02  
02  
02  
82  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
04  
08  
04  
04  
08  
04  
01  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0E  
04  
1C  
01  
1C  
01  
1C  
01  
CS Latency  
Write Latency  
02  
02  
02  
DIMM Attributes  
26  
26  
26  
Component Attributes  
C1  
60  
C1  
60  
C1  
60  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
50  
50  
50  
75  
75  
75  
Data Sheet  
25  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 14  
SPD Codes for HYS72D[128/256][300/321/320]GBR–5–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
–5  
2 Ranks  
–5  
2 Ranks  
–5  
Label Code  
PC3200R–30331 PC3200R–30331 PC3200R–30331  
JEDEC SPD Revision  
Description  
Rev. 1.0  
HEX  
50  
Rev. 1.0  
HEX  
50  
Rev. 1.0  
HEX  
50  
Byte#  
26  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
27  
3C  
28  
3C  
28  
3C  
28  
28  
tRRDmin [ns]  
29  
tRCDmin [ns]  
3C  
28  
3C  
28  
3C  
28  
30  
tRASmin [ns]  
31  
Module Density per Rank  
tAS, tCS [ns]  
01  
80  
01  
32  
60  
60  
60  
33  
tAH, TCH [ns]  
tDS [ns]  
60  
60  
60  
34  
40  
40  
40  
35  
tDH [ns]  
40  
40  
40  
36 – 40 not used  
00  
00  
00  
41  
42  
43  
44  
45  
46  
47  
tRCmin [ns]  
37  
37  
37  
tRFCmin [ns]  
tCKmax [ns]  
41  
41  
41  
28  
28  
28  
tDQSQmax [ns]  
tQHSmax [ns]  
not used  
28  
28  
28  
50  
50  
50  
00  
00  
00  
DIMM PCB Height  
01  
01  
01  
48 – 61 not used  
00  
00  
00  
62  
63  
64  
SPD Revision  
10  
10  
10  
Checksum of Byte 0-62  
E1  
C1  
00  
68  
E2  
C1  
00  
JEDEC ID Code of Infineon (1)  
C1  
00  
65 – 71 JEDEC ID Code of Infineon (2)  
72  
73  
74  
75  
Module Manufacturer Location  
Part Number, Char 1  
xx  
xx  
xx  
37  
37  
37  
Part Number, Char 2  
32  
32  
32  
Part Number, Char 3  
44  
44  
44  
Data Sheet  
26  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 14  
SPD Codes for HYS72D[128/256][300/321/320]GBR–5–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
–5  
2 Ranks  
–5  
2 Ranks  
–5  
Label Code  
PC3200R–30331 PC3200R–30331 PC3200R–30331  
JEDEC SPD Revision  
Description  
Rev. 1.0  
HEX  
31  
Rev. 1.0  
HEX  
31  
Rev. 1.0  
HEX  
32  
Byte#  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Part Number, Char 4  
Part Number, Char 5  
Part Number, Char 6  
Part Number, Char 7  
Part Number, Char 8  
Part Number, Char 9  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
32  
32  
35  
38  
38  
36  
33  
33  
33  
30  
32  
32  
30  
31  
30  
47  
47  
47  
42  
42  
42  
52  
52  
52  
35  
35  
35  
42  
42  
42  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
95 – 98 Module Serial Number (1 - 4)  
99 – 127 not used  
xx  
xx  
xx  
00  
00  
00  
Data Sheet  
27  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 15  
SPD Codes for HYS72D[128/256][300/321/320]GBR–6–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
–6  
2 Ranks  
–6  
2 Ranks  
–6  
Label Code  
PC2700R–25330 PC2700R–25330 PC2700R–25330  
Jedec SPD Revision  
Rev. 0.0  
HEX  
80  
Rev. 0.0  
HEX  
80  
Rev. 0.0  
HEX  
80  
Byte#  
0
Description  
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
1
08  
08  
08  
2
07  
07  
07  
3
0D  
0C  
01  
0D  
0B  
02  
0D  
0C  
02  
4
5
6
48  
48  
48  
7
Data Width (MSB)  
00  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support (non- / ECC)  
Refresh Rate  
04  
04  
04  
9
60  
60  
60  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
70  
70  
70  
02  
02  
02  
82  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
04  
08  
04  
04  
08  
04  
01  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0E  
04  
0C  
01  
0C  
01  
0C  
01  
CS Latency  
Write Latency  
02  
02  
02  
DIMM Attributes  
26  
26  
26  
Component Attributes  
C1  
75  
C1  
75  
C1  
75  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
70  
70  
70  
00  
00  
00  
Data Sheet  
28  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 15  
SPD Codes for HYS72D[128/256][300/321/320]GBR–6–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
–6  
2 Ranks  
–6  
2 Ranks  
–6  
Label Code  
PC2700R–25330 PC2700R–25330 PC2700R–25330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
00  
Rev. 0.0  
HEX  
00  
Rev. 0.0  
HEX  
00  
Byte#  
26  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
27  
48  
48  
48  
28  
tRRDmin [ns]  
30  
30  
30  
29  
tRCDmin [ns]  
48  
48  
48  
30  
tRASmin [ns]  
2A  
01  
2A  
80  
2A  
01  
31  
Module Density per Rank  
tAS, tCS [ns]  
32  
75  
75  
75  
33  
tAH, TCH [ns]  
tDS [ns]  
75  
75  
75  
34  
45  
45  
45  
35  
tDH [ns]  
45  
45  
45  
36 – 40 not used  
00  
00  
00  
41  
42  
43  
44  
45  
46  
47  
tRCmin [ns]  
3C  
48  
3C  
48  
3C  
48  
tRFCmin [ns]  
tCKmax [ns]  
30  
30  
30  
tDQSQmax [ns]  
tQHSmax [ns]  
not used  
28  
28  
28  
50  
50  
50  
00  
00  
00  
DIMM PCB Height  
00  
00  
00  
48 – 61 not used  
00  
00  
00  
62  
63  
64  
SPD Revision  
00  
00  
00  
Checksum of Byte 0-62  
CA  
C1  
00  
51  
CB  
C1  
00  
JEDEC ID Code of Infineon (1)  
C1  
00  
65 – 71 JEDEC ID Code of Infineon (2 - 8)  
72  
73  
74  
75  
Module Manufacturer Location  
Part Number, Char 1  
xx  
xx  
xx  
37  
37  
37  
Part Number, Char 2  
32  
32  
32  
Part Number, Char 3  
44  
44  
44  
Data Sheet  
29  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 15  
SPD Codes for HYS72D[128/256][300/321/320]GBR–6–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
–6  
2 Ranks  
–6  
2 Ranks  
–6  
Label Code  
PC2700R–25330 PC2700R–25330 PC2700R–25330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
31  
Rev. 0.0  
HEX  
31  
Rev. 0.0  
HEX  
32  
Byte#  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Part Number, Char 4  
Part Number, Char 5  
Part Number, Char 6  
Part Number, Char 7  
Part Number, Char 8  
Part Number, Char 9  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
32  
32  
35  
38  
38  
36  
33  
33  
33  
30  
32  
32  
30  
31  
30  
47  
47  
47  
42  
42  
42  
52  
52  
52  
36  
36  
36  
42  
42  
42  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
95 – 98 Module Serial Number (1 - 4)  
99 – 127 not used  
xx  
xx  
xx  
00  
00  
00  
Data Sheet  
30  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 16  
SPD Codes for HYS72D[128/256][300/321/320]GBR–7–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R–20330 PC2100R–20330 PC2100R–20330  
Jedec SPD Revision  
Rev. 0.0  
HEX  
80  
Rev. 0.0  
HEX  
80  
Rev. 0.0  
HEX  
80  
Byte#  
0
Description  
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
1
08  
08  
08  
2
07  
07  
07  
3
0D  
0C  
01  
0D  
0B  
02  
0D  
0C  
02  
4
5
6
48  
48  
48  
7
Data Width (MSB)  
00  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support (non- / ECC)  
Refresh Rate  
04  
04  
04  
9
70  
70  
70  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
75  
75  
75  
02  
02  
02  
82  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
04  
08  
04  
04  
08  
04  
01  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0E  
04  
0C  
01  
0C  
01  
0C  
01  
CS Latency  
Write Latency  
02  
02  
02  
DIMM Attributes  
26  
26  
26  
Component Attributes  
C1  
75  
C1  
75  
C1  
75  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
75  
75  
75  
00  
00  
00  
Data Sheet  
31  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 16  
SPD Codes for HYS72D[128/256][300/321/320]GBR–7–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R–20330 PC2100R–20330 PC2100R–20330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
00  
Rev. 0.0  
HEX  
00  
Rev. 0.0  
HEX  
00  
Byte#  
26  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
27  
50  
50  
50  
28  
tRRDmin [ns]  
3C  
50  
3C  
50  
3C  
50  
29  
tRCDmin [ns]  
30  
tRASmin [ns]  
2D  
01  
2D  
80  
2D  
01  
31  
Module Density per Rank  
tAS, tCS [ns]  
32  
90  
90  
90  
33  
tAH, TCH [ns]  
tDS [ns]  
90  
90  
90  
34  
50  
50  
50  
35  
tDH [ns]  
50  
50  
50  
36 – 40 not used  
00  
00  
00  
41  
42  
43  
44  
45  
46  
47  
tRCmin [ns]  
41  
41  
41  
tRFCmin [ns]  
tCKmax [ns]  
4B  
30  
4B  
30  
4B  
30  
tDQSQmax [ns]  
tQHSmax [ns]  
not used  
32  
32  
32  
75  
75  
75  
00  
00  
00  
DIMM PCB Height  
00  
00  
00  
48 – 61 not used  
00  
00  
00  
62  
63  
64  
SPD Revision  
00  
00  
00  
Checksum of Byte 0-62  
86  
0D  
C1  
00  
87  
JEDEC ID Code of Infineon (1)  
C1  
00  
C1  
00  
65 – 71 JEDEC ID Code of Infineon (2 - 8)  
72  
73  
74  
75  
Module Manufacturer Location  
Part Number, Char 1  
xx  
xx  
xx  
37  
37  
37  
Part Number, Char 2  
32  
32  
32  
Part Number, Char 3  
44  
44  
44  
Data Sheet  
32  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 16  
SPD Codes for HYS72D[128/256][300/321/320]GBR–7–B  
1 GB  
1 GB  
×72  
2 GB  
×72  
×72  
1 Rank  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R–20330 PC2100R–20330 PC2100R–20330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
31  
Rev. 0.0  
HEX  
31  
Rev. 0.0  
HEX  
32  
Byte#  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
Part Number, Char 4  
Part Number, Char 5  
Part Number, Char 6  
Part Number, Char 7  
Part Number, Char 8  
Part Number, Char 9  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
32  
32  
35  
38  
38  
36  
33  
33  
33  
30  
32  
32  
30  
31  
30  
47  
47  
47  
42  
42  
42  
52  
52  
52  
37  
37  
37  
42  
42  
42  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
95 – 98 Module Serial Number (1 - 4)  
99 – 127 not used  
xx  
xx  
xx  
00  
00  
00  
Data Sheet  
33  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 17  
SPD Codes for HYS72D128500HR–[7F/7]–B  
1 GB  
1 GB  
×72  
×72  
1 Rank  
1 Rank  
reg  
reg  
Label Code  
PC2100R–20220  
PC2100R–20330  
Jedec SPD Revision  
Rev. 0.0  
HEX  
80  
Rev. 0.0  
HEX  
80  
Byte#  
0
Description  
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
1
08  
08  
2
07  
07  
3
0D  
0C  
01  
0D  
0C  
01  
4
5
6
48  
48  
7
Data Width (MSB)  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support (non- / ECC)  
Refresh Rate  
04  
04  
9
70  
70  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
75  
75  
02  
02  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
04  
04  
04  
04  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0C  
01  
0C  
01  
CS Latency  
Write Latency  
02  
02  
DIMM Attributes  
26  
26  
Component Attributes  
C1  
75  
C1  
75  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
75  
75  
00  
00  
Data Sheet  
34  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 17  
SPD Codes for HYS72D128500HR–[7F/7]–B  
1 GB  
1 GB  
×72  
×72  
1 Rank  
1 Rank  
reg  
reg  
Label Code  
PC2100R–20220  
PC2100R–20330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
00  
Rev. 0.0  
HEX  
00  
Byte#  
26  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
27  
3C  
3C  
3C  
2D  
01  
50  
28  
tRRDmin [ns]  
3C  
50  
29  
tRCDmin [ns]  
30  
tRASmin [ns]  
2D  
01  
31  
Module Density per Rank  
tAS, tCS [ns]  
32  
90  
90  
33  
tAH, TCH [ns]  
90  
90  
34  
tDS [ns]  
50  
50  
35  
tDH [ns]  
50  
50  
36 – 40  
41  
not used  
00  
00  
tRCmin [ns]  
3C  
4B  
30  
41  
42  
tRFCmin [ns]  
4B  
30  
43  
tCKmax [ns]  
44  
tDQSQmax [ns]  
tQHSmax [ns]  
32  
32  
45  
75  
75  
46  
not used  
00  
00  
47  
DIMM PCB Height  
not used  
00  
00  
48 – 61  
62  
00  
00  
SPD Revision  
00  
00  
63  
Checksum of Byte 0-62  
JEDEC ID Code of Infineon (1)  
JEDEC ID Code of Infineon (2 – 8)  
Module Manufacturer Location  
Part Number, Char 1  
Part Number, Char 2  
Part Number, Char 3  
59  
86  
64  
C1  
00  
C1  
00  
65 – 71  
72  
xx  
xx  
73  
37  
37  
74  
32  
32  
75  
44  
44  
Data Sheet  
35  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
SPD Contents  
Table 17  
SPD Codes for HYS72D128500HR–[7F/7]–B  
1 GB  
1 GB  
×72  
×72  
1 Rank  
1 Rank  
reg  
reg  
Label Code  
PC2100R–20220  
PC2100R–20330  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
31  
Rev. 0.0  
HEX  
31  
Byte#  
76  
Part Number, Char 4  
Part Number, Char 5  
Part Number, Char 6  
Part Number, Char 7  
Part Number, Char 8  
Part Number, Char 9  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
Module Serial Number (1 – 4)  
not used  
77  
32  
32  
78  
38  
38  
79  
35  
35  
80  
30  
30  
81  
30  
30  
82  
48  
48  
83  
52  
52  
84  
37  
37  
85  
46  
42  
86  
42  
20  
87  
20  
20  
88  
20  
20  
89  
20  
20  
90  
20  
20  
91  
xx  
xx  
92  
xx  
xx  
93  
xx  
xx  
94  
xx  
xx  
95 – 98  
99 – 127  
xx  
xx  
00  
00  
Data Sheet  
36  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Package Outlines  
5
Package Outlines  
133.35  
0.15  
A B C  
128.95  
4 MAX.  
A
1
2.5  
92  
6.62  
2.175  
B
C
±0.1  
ø0.1  
A B C  
64.77  
0.4  
6.35  
±0.1  
1.27  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
Burr max. 0.4 allowed  
Package Outline – Raw Card C DDR Registered DIMM HYS72D128300GBR–[5/6/7]–B  
L-DIM-184-22-2  
Figure 4  
Data Sheet  
37  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Package Outlines  
133.35  
0.15  
A B C  
128.95  
4 MAX.  
A
1
2.5  
92  
6.62  
2.175  
B
C
±0.1  
ø0.1  
A B C  
64.77  
0.4  
6.35  
±0.1  
1.27  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
Burr max. 0.4 allowed  
L-DIM-184-23-2  
Figure 5  
Package Outline – Raw Card B DDR Registered DIMM HYS72D128321HR–[5/6/7]–B  
Data Sheet  
38  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Package Outlines  
133.35  
0.15  
A B C  
128.95  
4 MAX.  
A
1
2.5  
92  
B
C
6.62  
2.175  
±0.1  
ø0.1  
A B C  
0.4  
6.35  
±0.1  
1.27  
64.77  
49.53  
±0.1  
1.8  
0.1  
A B C  
93  
184  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
L-DIM-184-25  
Burr max. 0.4 allowed  
Figure 6  
Package Outline – Raw Card D DDR Registered DIMM HYS72D256320GBR–[5/6/7]–B  
Data Sheet  
39  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Package Outlines  
133.35  
0.15  
A B C  
128.95  
4 MAX.  
1)  
A
1
2.5  
92  
B
C
6.62  
2.175  
±0.1  
ø0.1  
A B C  
0.4  
6.35  
±0.1  
1.27  
64.77  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
1)  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
1) On ECC modules only  
Burr max. 0.4 allowed  
L-DIM-184-12-3  
Figure 7  
Package Outline – Raw Card M DDR Registered DIMM HYS72D128500HR–[7/7F]–B  
Data Sheet  
40  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Application Note  
6
Application Note  
Power Up and Power Management on DDR Registered DIMMs  
(according to JEDEC ballot JC-42.5 Item 1173)  
184-pin Double Data Rate (DDR) Registered DIMMs include two new features to facilitate controlled power-up and  
to minimize power consumption during low power mode. One feature is externally controlled via a system-  
generated RESET signal; the second is based on module detection of the input clocks. These enhancements  
permit the modules to power up with SDRAM outputs in a High-Z state (eliminating risk of high current dissipations  
and/or dotted I/Os), and result in the powering-down of module support devices (registers and Phase-Locked  
Loop) when the memory is in Self-Refresh mode.  
The new RESET pin controls power dissipation on the module’s registers and ensures that CKE and other SDRAM  
inputs are maintained at a valid ‘low’ level during power-up and self refresh. When RESET is at a low level, all the  
register outputs are forced to a low level, and all differential register input receivers are powered down, resulting  
in very low register power consumption. The RESET pin, located on DIMM tab #10, is driven from the system as  
an asynchronous signal according to the attached details. Using this function also permits the system and DIMM  
clocks to be stopped during memory Self Refresh operation, while ensuring that the SDRAMs stay in Self Refresh  
mode.  
Table 18  
The function for RESET is as follows:1)  
Register Inputs  
Register Outputs  
RESET  
CK  
CK  
Data in (D)  
Data out (Q)  
H
H
H
H
L
Rising  
Rising  
L or H  
High Z  
X or Hi-Z  
Falling  
Falling  
L or H  
High Z  
X or Hi-Z  
H
H
L
L
X
Qo  
X
Illegal input conditions  
L
X or Hi-Z  
1) X : Don’t care, Hi-Z : High Impedance, Qo: Data latched at the previous of CK risning and CK falling  
As described in the table above, a low on the RESET input ensures that the Clock Enable (CKE) signal(s) are  
maintained low at the SDRAM pins (CKE being one of the 'Q' signals at the register output). Holding CKE low  
maintains a high impedance state on the SDRAM DQ, DQS and DM outputs — where they will remain until  
activated by a valid ‘read’ cycle. CKE low also maintains SDRAMs in Self Refresh mode when applicable.  
The DDR PLL devices automatically detect clock activity above 20MHz. When an input clock frequency of 20MHz  
or greater is detected, the PLL begins operation and initiates clock frequency lock (the minimum operating  
frequency at which all specifications will be met is 95MHz). If the clock input frequency drops below 20MHz (actual  
detect frequency will vary by vendor), the PLL VCO (Voltage Controlled Oscillator) is stopped, outputs are made  
High-Z, and the differential inputs are powered down — resulting in a total PLL current consumption of less than  
1mA. Use of this low power PLL function makes the use of the PLL RESET (or G pin) unnecessary, and it is tied  
inactive on the DIMM.  
This application note describes the required and optional system sequences associated with the DDR Registered  
DIMM 'RESET' function. It is important to note that all references to CKE refer to both CKE0 and CKE1 for a 2-  
bank DIMM. Because RESET applies to all DIMM register devices, it is therefore not possible to uniquely control  
CKE to one physical DIMM bank through the use of the RESET pin.  
Data Sheet  
41  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Application Note  
Power-Up Sequence with RESET — Required  
1. The system sets RESET at a valid low level. This is the preferred default state during power-up. This input  
condition forces all register outputs to a low state independent of the condition on the register inputs (data and  
clock), ensuring that CKE is at a stable low-level at the DDR SDRAMs.  
2. The power supplies should be initialized according to the JEDEC-approved initialization sequence for DDR  
SDRAMs.  
3. Stabilization of Clocks to the SDRAM The system must drive clocks to the application frequency (PLL  
operation is not assured until the input clock reaches 20MHz). Stability of clocks at the SDRAMs will be  
affected by all applicable system clock devices, and time must be allotted to permit all clock devices to settle.  
Once a stable clock is received at the DIMM PLL, the required PLL stabilization time (assuming power to the  
DIMM is stable) is 100 microseconds. When a stable clock is present at the SDRAM input (driven from the  
PLL), the DDR SDRAM requires 200 µsec prior to SDRAM operation.  
4. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector). CKE must be maintained low and all other inputs should be driven to a known state. In general  
these commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’  
command (with CKE low), as this is the first command defined by the JEDEC initialization sequence (ideally  
this would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs  
to be consistent with the state of the register outputs.  
5. The system switches RESET to a logic ‘high’ level. The SDRAM is now functional and prepared to receive  
commands. Since the RESET signal is asynchronous, setting the RESET timing in relation to a specific clock  
edge is not required (during this period, register inputs must remain stable).  
6. The system must maintain stable register inputs until normal register operation is attained. The registers have  
an activation time that allows their clock receivers, data input receivers, and output drivers sufficient time to be  
turned on and become stable. During this time the system must maintain the valid logic levels described in step  
5. It is also a functional requirement that the registers maintain a low state at the CKE outputs to guarantee  
that the DDR SDRAMs continue to receive a low level on CKE. Register activation time (t (ACT) ), from  
asynchronous switching of RESET from low to high until the registers are stable and ready to accept an input  
signal, is specified in the register and DIMM do-umentation.  
7. The system can begin the JEDEC-defined DDR SDRAM power-up sequence (according to the JEDEC-  
pproved initialization sequence).  
Self Refresh Entry (RESET low, clocks powered off) — Optional  
Self Refresh can be used to retain data in DDR SDRAM DIMMs even if the rest of the system is powered down  
and the clocks are off. This mode allows the DDR SDRAMs on the DIMM to retain data without external clocking.  
Self Refresh mode is an ideal time to utilize the RESET pin, as this can reduce register power consumption  
(RESET low deactivates register CK and CK, data input receivers, and data output drivers).  
1. The system applies Self Refresh entry command. (CKELow, CSLow, RAS Low, CASLow, WE→  
High)  
Note:Note: The commands reach the DDR SDRAM one clock later due to the additional register pipelining on a  
Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input  
conditions to the SDRAM are Don’t Cares— with the exception of CKE.  
2. The system sets RESET at a valid low level. This input condition forces all register outputs to a low state,  
independent of the condition on the registerm inputs (data and clock), and ensures that CKE, and all other  
control and address signals, are a stable low-level at the DDR SDRAMs. Since the RESET signal is  
asynchronous, setting the RESET timing in relation to a specific clock edge is not required.  
3. The system turns off clock inputs to the DIMM. (Optional)  
a. In order to reduce DIMM PLL current, the clock inputs to the DIMM are turned off, resulting in High-Z clock  
inputs to both the SDRAMs and the registers. This must be done after the RESET deactivate time of the  
register (t (INACT) ). The deactivate time defines the time in which the clocks and the control and address  
Data Sheet  
42  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Application Note  
signals must maintain valid levels after RESET low has been applied and is specified in the register and DIMM  
documentation.  
b. The system may release DIMM address and control inputs to High-Z. This can be done after the RESET  
deactivate time of the register. The deactivate time defines the time in which the clocks and the control and the  
address signals must maintain valid levels after RESET low has been applied. It is highly recommended that  
CKE continue to remain low during this operation.  
4. The DIMM is in lowest power Self Refresh mode.  
Self Refresh Exit (RESET low, clocks powered off) — Optional  
1. Stabilization of Clocks to the SDRAM. The system must drive clocks to the application frequency (PLL  
operation is not assured until the input clock reaches ~20MHz). Stability of clocks at the SDRAMs will be  
affected by all applicable system clock devices, and time must be allotted to permit all clock devices to settle.  
Once a stable clock is received at the DIMM PLL, the required PLL stabilization time (assuming power to the  
DIMM is stable) is 100 microseconds.  
2. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector). CKE must be maintained low and all other inputs should be driven to a known state. In general  
these commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’  
command (with CKE low), as this is the first command defined by the JEDEC Self Refresh Exit sequence  
(ideally this would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register  
inputs, to be consistent with the state of the register outputs.  
3. The system switches RESET to a logic ‘high’ level. The SDRAM is now functional and prepared to receive  
commands. Since the RESET signal is asynchronous, RESET timing relationship to a specific clock edge is  
not required (during this period, register inputs must remain stable).  
4. The system must maintain stable register inputs until normal register operation is attained. The registers have  
an activation time that allows the clock receivers, input receivers, and output drivers sufficient time to be turned  
on and become stable. During this time the system must maintain the valid logic levels described in Step 2. It  
is also a functional requirement that the registers maintain a low state at the CKE outputs to guarantee that the  
DDR SDRAMs continue to receive a low level on CKE. Register activation time (t (ACT) ), from asynchronous  
switching of RESET from low to high until the registers are stable and ready to accept an input signal, is  
specified in the register and DIMM do-umentation.  
5. System can begin the JEDEC-defined DDR SDRAM Self Refresh Exit Procedure.  
Self Refresh Entry (RESET low, clocks running) — Optional  
Although keeping the clocks running increases power consumption from the on-DIMM PLL during self refresh, this  
is an alternate operating mode for these DIMMs.  
1. System enters Self Refresh entry command. (CKELow, CSLow, RASLow, CASLow, WEHigh)  
Note:Note: The commands reach the DDR SDRAM one clock later due to the additional register pipelining on a  
Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input  
conditions to the SDRAM are Don’t Cares — with the exception of CKE.  
2. The system sets RESET at a valid low level. This input condition forces all register outputs to a low state,  
independent of the condition on the data and clock register inputs, and ensures that CKE is a stable low-level  
at the DDR SDRAMs.  
3. The system may release DIMM address and control inputs to High-Z. This can be done after the RESET  
deactivate time of the register (t (INACT) ). The deactivate time describes the time in which the clocks and the  
control and the address signals must maintain valid levels after RESET low has been applied. It is highly  
recommended that CKE continue to remain low during the operation.  
4. The DIMM is in a low power, Self Refresh mode.  
Data Sheet  
43  
Rev. 0.5, 2003-12  
HYS72D[128/256][300/320/321/500][GBR/HR]-[5/6/7/7F]-B  
Registered Double Data Rate SDRAM Module  
Application Note  
Self Refresh Exit (RESET low, clocks running) — Optional  
1. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector). CKE must be maintained low and all other inputs should be driven to a known state. In general  
these commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’  
command (with CKE low), as this is the first command defined by the Self Refresh Exit sequence (ideally this  
would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs to be  
consistent with the state of the register outputs.  
2. The system switches RESET to a logic 'high' level. The SDRAM is now functional and prepared to receive  
commands. Since the RESET signal is asynchronous, it does not need to be tied to a particular clock edge  
(during this period, register inputs must continue to remain stable).  
3. The system must maintain stable register inputs until normal register operation is attained. The registers have  
an activation time that allows the clock receivers, input receivers, and output drivers sufficient time to be turned  
on and become stable. During this time the system must maintain the valid logic levels described in Step 1. It  
is also a functional requirement that the registers maintain a low state at the CKE outputs in order to guarantee  
that the DDR SDRAMs continue to receive a low level on CKE. This activation time, from asynchronous  
switching of RESET from low to high, until the registers are stable and ready to accept an input signal, is t (ACT  
) as specified in the register and DIMM documentation.  
4. The system can begin JEDEC defined DDR SDRAM Self Refresh Exit Procedure.  
Self Refresh Entry/Exit (RESET high, clocks running) — Optional  
As this sequence does not involve the use of the RESET function, the JEDEC standard SDRAM specification  
explains in detail the method for entering and exiting Self Refresh for this case.  
Self Refresh Entry (RESET high, clocks powered off) — Not Permissible  
In order to maintain a valid low level on the register output, it is required that either the clocks be running and the  
system drive a low level on CKE, or the clocks are powered off and RESET is asserted low according to the  
sequence defined in this application note. In the case where RESET remains high and the clocks are powered off,  
the PLL drives a High-Z clock input into the register clock input. Without the low level on RESET an unknown DIMM  
state will result.  
Data Sheet  
44  
Rev. 0.5, 2003-12  
h t t p : / / w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  
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INFINEON

HYS64-72V2200GU-8 3.3V 2M ×64 /72- 1位BANK SDRAM模块3.3V 4M ×64 /72- 2位BANK SDRAM模块[ 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module ] 17 页

INFINEON

HYS64-74V8200GU 3.3 V 8M ×64 /72- 1位银行SDRAM模块3.3 V 16M ×64 /72- 2位银行SDRAM模块[ 3.3 V 8M x 64/72-Bit 1 Bank SDRAM Module 3.3 V 16M x 64/72-Bit 2 Bank SDRAM Module ] 17 页

INFINEON

HYS6472V16200GU 3.3 V 16M ×64 /72-位SDRAM模块3.3 V 32M ×64 /72-位SDRAM模块3.3 V 64M ×64 /72-位SDRAM模块[ 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules ] 17 页

INFINEON

HYS6472V4200GU 3.3V 4M ×64 /72- 1位BANK SDRAM模块3.3V 8M ×64 /72- 2位BANK SDRAM模块[ 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module ] 15 页

INFINEON

HYS64D128020GBDL-6-A [ DDR DRAM Module, 128MX64, 0.7ns, CMOS, SO-DIMM-200 ] 11 页

ETC

HYS64D128020GBDL-7-A ? 1GB ( 1024Mx64 ) PC2100 2银行?\n[ ?1GB (1024Mx64) PC2100 2-bank? ] 11 页

INFINEON

HYS64D128020GU-7-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

INFINEON

HYS64D128020GU-8-A 2.5 V 184针无缓冲DDR- SDRAM我模块[ 2.5 V 184-pin Unbuffered DDR-I SDRAM Modules ] 18 页

QIMONDA

HYS64D128020GU-8-A [ DDR DRAM Module, 128MX64, 0.8ns, CMOS, PDMA184 ] 18 页

INFINEON

HYS64D128021 200针的小型双列直插式内存模块[ 200-Pin Small Outline Dual-In-Line Memory Modules ] 23 页

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