VVZ 70 VVZF 70  
					VTO 70 VTOF 70  
					Three Phase  
					IdAV = 70 A  
					Rectifier Bridge  
					VRRM = 800-1600 V  
					Preliminary data  
					A
					A
					2
					3
					1
					2
					3
					1
					C
					D
					E
					C
					D
					E
					VRSM  
					VDSM  
					VRRM  
					VDRM  
					Type  
					B
					A
					B
					A
					V
					V
					VVZ 70  
					VVZF 70  
					800  
					1200  
					1400  
					1600  
					800  
					1200  
					1400  
					1600  
					xxx 70-08io7  
					xxx 70-12io7  
					xxx 70-14io7  
					xxx 70-16io7  
					2
					5
					2
					5
					3
					4
					1
					6
					3
					1
					6
					C
					D
					E
					C
					D
					E
					4
					xxx = type  
					B
					B
					VTO 70  
					VTOF 70  
					Features  
					Symbol  
					Test Conditions  
					Maximum Ratings  
					Package with copper base plate  
					Isolation voltage 3000 V~  
					Planar passivated chips  
					Low forward voltage drop  
					¼" fast-on power terminals  
					IdAV  
					IdAVM  
					IFRMS, ITRMS  
					¬
					¬
					TK = 85°C, module  
					module  
					per leg  
					70  
					70  
					36  
					A
					A
					A
					IFSM, ITSM  
					TVJ = 45°C;  
					VR = 0 V  
					t = 10 ms (50 Hz), sine  
					t = 8.3 ms (60 Hz), sine  
					550  
					600  
					A
					A
					Applications  
					TVJ = TVJM  
					VR = 0 V  
					t = 10 ms (50 Hz), sine  
					t = 8.3 ms (60 Hz), sine  
					500  
					550  
					A
					A
					A2s  
					A2s  
					Supplies for DC power equipment  
					Input rectifiers for PWM inverter  
					Battery DC power supplies  
					Field supply for DC motors  
					I2t  
					TVJ = 45°C  
					VR = 0 V  
					t = 10 ms (50 Hz), sine  
					t = 8.3 ms (60 Hz), sine  
					1520  
					1520  
					T
					VJ = TVJM  
					t = 10 ms (50 Hz), sine  
					t = 8.3 ms (60 Hz), sine  
					1250  
					1250  
					A2s  
					A2s  
					F2  
					Advantages  
					VR = 0 V  
					Easy to mount with two screws  
					Space and weight savings  
					Improved temperature and power  
					cycling capability  
					(di/dt)cr  
					TVJ = 125°C  
					repetitive, IT = 50 A  
					150  
					A/µs  
					f = 50 Hz, tP = 200 µs  
					VD = 2/3 VDRM  
					IG = 0.3 A,  
					non repetitive, IT = 1/2  IdAV  
					500  
					1000  
					10  
					A/µs  
					V/µs  
					V
					Small and light weight  
					diG/dt = 0.3 A/µs  
					(dv/dt)cr  
					TVJ = TVJM; VDR = 2/3 VDRM  
					RGK = ∞; method 1 (linear voltage rise)  
					Dimensions in mm (1 mm = 0.0394")  
					VRGM  
					PGM  
					TVJ = TVJM  
					IT = ITAVM  
					tp = 30 µs  
					tp = 500 µs  
					tp = 10 ms  
					≤
					≤
					≤
					10  
					5
					1
					W
					W
					W
					W
					PGAVM  
					0.5  
					TVJ  
					TVJM  
					Tstg  
					-40...+125  
					125  
					-40...+125  
					°C  
					°C  
					°C  
					VISOL  
					50/60 Hz, RMS  
					t = 1 min  
					t = 1 s  
					2500  
					3000  
					V~  
					V~  
					IISOL ≤ 1 mA  
					Md  
					Mounting torque  
					(M5)  
					(10-32 UNF)  
					5 ± 15 %  
					44 ± 15 %  
					50  
					Nm  
					lb.in.  
					g
					Weight  
					Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated  
					¬ for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and  
					dimensions.  
					© 1999 IXYS All rights reserved  
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