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8NH3L

型号：

8NH3L

描述：

N沟道30V - 0.012ohm - 8A - PowerFLAT超低栅极电荷的STripFET功率MOSFET[ N-channel 30V - 0.012ohm - 8A - PowerFLAT Ultra low gate charge STripFET Power MOSFET ]

品牌：

STMICROELECTRONICS[ ST ]

页数：

12 页

PDF大小：

286 K

下载PDF手册
STL8NH3LL  
N-channel 30V - 0.012Ω - 8A - PowerFLAT™  
Ultra low gate charge STripFET™ Power MOSFET  
General features  
Type  
V
R
I
D
DSS  
DS(on)  
(1)  
STL8NH3LL  
30V  
<0.015Ω  
8A  
■ Improved die-to-footprint ratio  
■ Very low profile package (1mm max)  
■ Very low thermal resistance  
■ Very low gate charge  
PowerFLAT™(3.3x3.3)  
(Chip Scale Package)  
■ Low threshold device  
■ In compliance with the 2002/95/EC Europen  
directive  
Description  
Internal schematic diagram  
This application specific Power MOSFET is the  
latest generation of STMicroelectronics unique  
“STripFET™” technology. The resulting transistor  
is optimized for low on-resistance and minimal  
gate charge. The Chip-scaled PowerFLAT™  
package allows a significant board space saving,  
still boosting the performance.  
Applications  
■ Switching application  
TOP VIEW  
Order codes  
Sales Type  
Marking  
Package  
Packaging  
STL8NH3LL  
8NH3L  
PowerFLAT™ (3.3 x 3.3)  
Tape & reel  
March 2006  
Rev 7  
1/12  
www.st.com  
12  
Contents:  
STL8NH3LL  
Contents:  
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
Electrical characteristics (curves)  
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
3
4
5
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
STL8NH3LL  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
V
V
Drain-Source Voltage (V = 0)  
30  
± 18  
8
V
V
DS  
GS  
Gate-Source Voltage  
GS  
(1)  
I
Drain Current (continuous) at T = 25°C  
A
D
C
(1)  
I
Drain Current (continuous) at T =100°C  
5
A
D
C
(2)  
I
P
P
Drain Current (pulsed)  
32  
50  
2
A
DM  
(3)  
(1)  
Total Dissipation at T = 25°C  
W
TOT  
TOT  
C
Total Dissipation at T = 25°C  
W
C
Derating Factor  
0.4  
W/°C  
T
Operating Junction Temperature  
Storage Temperature  
J
-55 to 150  
°C  
T
stg  
1. The value is rated according Rthj-pcb  
2. Pulse width limited by safe operating area.  
3. The vaule is rated according Rthj-c  
Table 2.  
Symbol  
Thermal resistance  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case (Drain)  
Thermal resistance junction-pcb  
Thermal resistance junction-pcb  
2.5  
°C/W  
°C/W  
°C/W  
thj-case  
(1)  
R
R
42.8  
63.5  
thj-pcb  
thj-pcb  
(2)  
1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec  
2. Steady state  
3/12  
Electrical characteristics  
STL8NH3LL  
2
Electrical characteristics  
(T  
=25°C unless otherwise specified)  
CASE  
Table 3.  
Symbol  
On/off states  
Parameter  
Test Condictions  
Min.  
Typ.  
Max. Unit  
Drain-Source Breakdown  
Voltage  
V
I
= 250µA, V = 0  
30  
V
(BR)DSS  
D
GS  
V
V
= Max Rating,  
1
µA  
µA  
Zero Gate Voltage Drain  
DS  
I
I
DSS  
GSS  
Current (V = 0)  
= MaxRating @125°C  
10  
GS  
DS  
GS  
DS  
Gate Body Leakage Current  
V
V
= ±18V  
±100  
2.5  
nA  
V
(V = 0)  
DS  
V
= V , I = 250µA  
Gate Threshold Voltage  
1
GS(th)  
DS(on)  
GS  
D
V
V
= 10V, I = 4A  
D
0.012 0.015  
0.0135 0.017  
Ω
Ω
GS  
Static Drain-Source On  
Resistance  
R
= 4.5V, I = 4A  
GS  
D
Table 4.  
Symbol  
Dynamic  
Parameter  
Test Condictions  
Min. Typ.  
Max. Unit  
(1)  
V
=15V, I = 4A  
Forward Transconductance  
30  
S
g
DS  
DS  
D
fs  
C
Input Capacitance  
Output Capacitance  
iss  
965  
285  
38  
pF  
pF  
pF  
C
oss  
V
=25V, f=1 MHz, V =0  
GS  
Reverse Transfer  
Capacitance  
C
rss  
Q
V
V
=15V, I = 8A  
g
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
9
3.7  
3
12  
nC  
nC  
nC  
DD  
D
Q
Q
=4.5V  
gs  
gd  
GS  
(see Figure 7)  
f=1 MHz Gate DC Bias = 0  
Test Signal Level = 20mV  
Open Drain  
R
Gate Input Resistance  
0.5  
1.5  
2.5  
Ω
G
1. Pulsed: pulse duration=300µs, duty cycle 1.5%  
4/12  
STL8NH3LL  
Electrical characteristics  
Table 5.  
Symbol  
Switching times  
Parameter  
Test Condictions  
=15V, I = 4A,  
Min.  
Typ. Max. Unit  
t
d(on)  
Turn-on Delay Time  
Rise Time  
15  
32  
18  
8.5  
ns  
ns  
ns  
ns  
V
DD  
D
t
r
R =4.7Ω, V =4.5V  
G
GS  
t
Turn-off Delay Time  
Fall Time  
d(off)  
(see Figure 13)  
t
f
Table 6.  
Symbol  
Source drain diode  
Parameter  
Test Condictions  
Min Typ. Max Unit  
I
Source-drain Current  
8
A
A
V
SD  
(1)  
Source-drain Current (pulsed)  
Forward on Voltage  
32  
1.3  
I
SDM  
(2)  
SD  
I
I
=8A, V =0  
GS  
V
SD  
=8A,  
SD  
t
rr  
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Current  
24  
ns  
nC  
A
di/dt = 100A/µs,  
=20V, Tj=150°C  
Q
17.4  
1.45  
rr  
RRM  
V
DD  
I
(see Figure 15)  
1. Pulse width limited by safe operating area  
2. Pulsed: pulse duration=300µs, duty cycle 1.5%  
5/12  
Electrical characteristics  
STL8NH3LL  
2.1  
Electrical characteristics (curves)  
Figure 1. Safe operating area  
Figure 2. Thermal impedance  
Figure 3. Output characterisics  
Figure 4. Transfer characteristics  
Figure 5. Transconductance  
Figure 6. Static drain-source on resistance  
6/12  
STL8NH3LL  
Electrical characteristics  
Figure 7. Gate charge vs gate-source voltage Figure 8. Capacitance variations  
Figure 9. Normalized gate threshold voltage Figure 10. Normalized on resistance vs  
vs temperature  
temperature  
Figure 11. Source-drain diode forward  
characteristics  
Figure 12. Normalized B  
vs temperature  
VDSS  
7/12  
Test circuit  
STL8NH3LL  
3
Test circuit  
Figure 13. Switching times test circuit for  
resistive load  
Figure 14. Gate charge test circuit  
Figure 15. Test circuit for inductive load  
switching and diode recovery times  
Figure 16. Unclamped inductive load test  
circuit  
Figure 17. Unclamped inductive waveform  
Figure 18. Switching time waveform  
8/12  
STL8NH3LL  
Package mechanical data  
4
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
9/12  
Package mechanical data  
STL8NH3LL  
PowerFLAT™ (3.3 x 3.3) MECHANICAL DATA  
mm.  
TYP  
inch  
DIM.  
MIN.  
MAX.  
1.00  
0.05  
MIN.  
TYP.  
0.035  
0.0007  
0.0007  
0.011  
0.012  
0.004  
0.13  
MAX.  
0.039  
A
A1  
A3  
b
0.80  
0.90  
0.031  
0.02  
0.0019  
0.20  
0.23  
0.30  
0.38  
0.009  
0.015  
C
0.328  
0.12  
C1  
D
3.30  
D2  
E
2.50  
1.25  
2.65  
2.75  
1.50  
0.098  
0.049  
0.104  
0.13  
0.108  
0.059  
3.30  
E2  
F
1.40  
0.055  
0.052  
0.038  
0.033  
0.009  
1.325  
0.975  
0.850  
0.250  
F1  
G
G1  
10/12  
STL8NH3LL  
Revision history  
5
Revision history  
Table 7.  
Date  
Revision history  
Revision  
Changes  
21-Jul-2004  
05-Oct-2004  
19-Oct-2004  
22-Nov-2004  
21-Feb-2005  
18-Apr-2005  
14-Mar-2006  
1
2
3
4
5
6
7
First Release  
Values Changed  
New value inserted  
Document updated  
Final version  
Modified Figure 3, Figure 5., Figure 8.,Figure 9.  
New template  
11/12  
STL8NH3LL  
Please Read Carefully:  
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the  
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any  
time, without notice.  
All ST products are sold pursuant to ST’s terms and conditions of sale.  
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no  
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this  
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products  
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such  
third party products or services or any intellectual property contained therein.  
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED  
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED  
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS  
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.  
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED,  
AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,  
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR  
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.  
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void  
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any  
liability of ST.  
ST and the ST logo are trademarks or registered trademarks of ST in various countries.  
Information in this document supersedes and replaces all information previously supplied.  
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
12/12  
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