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CYK128K16SCCBU-55BVI

型号：

CYK128K16SCCBU-55BVI

描述：

2兆位（ 128K ×16 ）伪静态RAM[ 2-Mbit (128K x 16) Pseudo Static RAM ]

品牌：

CYPRESS[ CYPRESS ]

页数：

10 页

PDF大小：

182 K

下载PDF手册
CYK128K16SCCB  
2-Mbit (128K x 16) Pseudo Static RAM  
Features  
Functional Description[1]  
• Advanced low-power MoBL® architecture  
• High speed: 55 ns, 70 ns  
The CYK128K16SCCB is a high-performance CMOS pseudo  
static RAM (PSRAM) organized as 128K words by 16 bits that  
supports an asynchronous memory interface. This device  
features advanced circuit design to provide ultra-low active  
current. This is ideal for providing More Battery Life™ (MoBL)  
in portable applications such as cellular telephones. The  
device can be put into standby mode, reducing power  
consumption dramatically when deselected (CE1 LOW, CE2  
HIGH or both BHE and BLE are HIGH). The input/output pins  
(I/O0 through I/O15) are placed in a high-impedance state  
when the chip is deselected (CE1 HIGH, CE2 LOW) or OE is  
deasserted HIGH), or during a write operation (Chip Enabled  
and Write Enable WE LOW). Reading from the device is  
accomplished by asserting the Chip Enables (CE1 LOW and  
CE2 HIGH) and Output Enable (OE) LOW while forcing the  
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,  
then data from the memory location specified by the address  
pins will appear on I/O0 to I/O7. If Byte High Enable (BHE) is  
LOW, then data from memory will appear on I/O8 to I/O15. See  
the Truth Table for a complete description of read and write  
modes.  
• Wide voltage range: 2.7V to 3.3V  
• Typical active current: 1 mA @ f = 1 MHz  
• Low standby power  
• Automatic power-down when deselected  
Logic Block Diagram  
DATA IN DRIVERS  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
128K x 16  
RAM Array  
I/O0–I/O7  
I/O8–I/O15  
COLUMN DECODER  
BHE  
WE  
CE2  
CE1  
OE  
BLE  
CE2  
CE1  
Power -Down  
Circuit  
BHE  
BLE  
Note:  
1. For best-practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.  
Cypress Semiconductor Corporation  
Document #: 38-05525 Rev. *F  
•
3901 North First Street  
•
San Jose, CA 95134  
•
408-943-2600  
Revised January 26, 2005  
CYK128K16SCCB  
Pin Configuration[2, 3, 4]  
48Ball VFBGA  
Top View  
1
4
2
5
3
6
A
A
A
2
CE2  
OE  
BLE  
0
1
A
B
C
A
A
I/O BHE  
CE1 I/O  
4
3
0
8
A
A
6
I/O  
I/O  
I/O  
I/O  
5
10  
1
2
9
VCC  
A
V
I/O  
I/O  
3
NC  
D
E
F
SS  
7
11  
VSS  
DNU  
A
16  
V
CC  
I/O  
I/O  
12  
4
A
A
15  
I/O  
I/O  
5
I/O  
I/O  
14  
13  
14  
6
A
A
G
H
I/O  
I/O  
NC  
WE  
13  
12  
15  
7
A
A
A
A
NC  
NC  
10  
9
11  
8
Product Portfolio  
Power Dissipation  
Operating, ICC (mA)  
f = 1 MHz f = fMAX  
VCC Range  
(V)  
Standby, ISB2  
(µA)  
Speed  
(ns)  
Product  
Min.  
Typ.  
Max.  
3.3  
Typ.[5]  
Max.  
Typ.[5]  
Max.  
22  
Typ.[5]  
Max.  
CYK128K16SCCB  
2.7  
3.0  
55  
70  
1
5
14  
8
9
40  
15  
Note:  
2. Ball D3, H1, G2, H6 are the address expansion pins for the 4-Mb, 8-Mb, 16-Mb, and 32-Mb densities respectively.  
3. NC “no connect”—not connected internally to the die.  
4. DNU (Do Not Use) pins have to be left floating or tied to V to ensure proper application.  
SS  
5. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V = V (typ) and T = 25C.  
CC  
CC  
A
Document #: 38-05525 Rev. *F  
Page 2 of 10  
CYK128K16SCCB  
Output Current into Outputs (LOW) ............................ 20 mA  
Maximum Ratings  
Static Discharge Voltage ......................................... > 2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-up Current ....................................................> 200 mA  
Storage Temperature .................................–65°C to +150°C  
Operating Range  
Ambient Temperature with  
Power Applied ............................................–55°C to +125°C  
Ambient  
Temperature (TA)  
Supply Voltage to Ground Potential ................ −0.4V to 4.6V  
Range  
VCC  
DC Voltage Applied to Outputs  
Industrial  
−25°C to +85°C  
2.7V to 3.3V  
in High-Z State[6, 7, 8] ....................................... −0.4V to 3.3V  
DC Input Voltage[6, 7, 8] ................................... −0.4V to 3.3V  
DC Electrical Characteristics (Over the Operating Range)  
CYK128K16SCCB-55  
Min. Typ.[5] Max.  
CYK128K16SCCB-70  
Min. Typ.[5] Max. Unit  
Parameter.  
VCC  
Description  
Test Conditions  
Supply Voltage  
2.7  
3.0  
3.3  
2.7  
3.3  
V
V
VOH  
Output HIGH Voltage IOH = −0.1 mA  
VCC  
0.4  
–
VCC  
0.4  
–
VOL  
VIH  
Output LOW Voltage IOL = 0.1 mA  
Input HIGH Voltage  
0.4  
0.4  
V
V
0.8 *  
VCC  
VCC  
0.4  
+
0.8 *  
VCC  
VCC  
0.4  
+
VIL  
IIX  
Input LOW Voltage f = 0  
−0.4  
−1  
0.4  
+1  
−0.4  
−1  
0.4  
+1  
V
Input Leakage  
Current  
GND < VI < VCC  
µA  
IOZ  
ICC  
Output Leakage  
Current  
GND < VO < VCC, Output  
Disabled  
−1  
+1  
−1  
+1  
µA  
VCC Operating  
Supply Current  
f = fMAX = 1/tRC VCC = 3.3V,  
14  
1
22  
5
8
1
15  
5
mA  
IOUT = 0mA,  
CMOS level  
f = 1 MHz  
ISB1  
Automatic CE  
Power-down Current VIN > VCC − 0.2V, VIN < 0.2V,  
—CMOS Inputs  
CE1 > VCC − 0.2V, CE2 < 0.2V  
40  
250  
40  
250  
µA  
µA  
f = fMAX(Address and Data Only),  
f = 0 (OE, WE, BHE and BLE),  
VCC = 3.3V  
ISB2  
Automatic CE  
Power-down Current VIN > VCC − 0.2V or VIN < 0.2V,  
—CMOS Inputs  
CE1 > VCC − 0.2V, CE2 < 0.2V  
9
40  
9
40  
f = 0, VCC =3.3V  
Capacitance[9]  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
Max.  
Unit  
CIN  
TA = 25°C, f = 1 MHz  
CC = VCC(typ)  
8
8
pF  
pF  
V
COUT  
Thermal Resistance[9]  
Parameter  
θJA  
Description  
Test Conditions  
VFBGA  
Unit  
Thermal Resistance  
(Junction to Ambient)  
Test conditions follow standard test methods  
and procedures for measuring thermal  
impedance, per EIA / JESD51.  
55  
°C/W  
θJC  
Thermal Resistance  
(Junction to Case)  
17  
°C/W  
Notes:  
6. V  
7. V  
= V + 0.5V for pulse durations less than 20 ns.  
CC  
= –0.5V for pulse durations less than 20 ns.  
IH(MAX)  
IL(MIN)  
8. Overshoot and undershoot specifications are characterized and are not 100% tested.  
9. Tested initially and after design or process changes that may affect these parameters.  
Document #: 38-05525 Rev. *F  
Page 3 of 10  
CYK128K16SCCB  
AC Test Loads and Waveforms  
R1  
ALL INPUT PULSES  
90%  
10%  
VCC  
OUTPUT  
VCC  
90%  
10%  
GND  
Fall Time = 1 V/ns  
R2  
30 pF  
Rise Time = 1 V/ns  
INCLUDING  
JIG AND  
SCOPE  
Equivalent to: THEVENIN EQUIVALENT  
RTH  
OUTPUT  
VTH  
Parameters  
3.0V VCC  
22000  
22000  
11000  
1.50  
Unit  
Ω
R1  
R2  
Ω
RTH  
VTH  
Ω
V
Switching Characteristics (Over the Operating Range) [10]  
CYK128K16SCCB-55  
CYK128K16SCCB-70  
Parameter  
Description  
Min.  
55[14]  
5
Max.  
Min.  
Max.  
Unit  
Read Cycle  
tRC  
Read Cycle Time  
70  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
Address to Data Valid  
55  
70  
tOHA  
tACE  
Data Hold from Address Change  
CE1 LOW and CE2 HIGH to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z[11, 12]  
OE HIGH to High Z[11, 12]  
CE1 LOW and CE2 HIGH to Low Z[11, 12]  
CE1 HIGH and CE2 LOW to High Z[11, 12]  
BLE/BHE LOW to Data Valid  
BLE/BHE LOW to Low Z[11, 12]  
BLE/BHE HIGH to High-Z[11, 12]  
Address Skew  
10  
55  
25  
70  
35  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tDBE  
5
5
5
5
25  
25  
25  
55  
25  
70  
tLZBE  
tHZBE  
5
5
10  
0
25  
10  
[14]  
tSK  
Write Cycle[13]  
tWC  
tSCE  
tAW  
tHA  
Write Cycle Time  
55  
45  
45  
0
70  
55  
55  
0
ns  
ns  
ns  
ns  
ns  
CE1 LOW and CE2 HIGH to Write End  
Address Set-up to Write End  
Address Hold from Write End  
Address Set-up to Write Start  
tSA  
0
0
Notes:  
10. Test conditions assume signal transition time of 1 V/ns or higher, timing reference levels of V  
/2, input pulse levels of 0V to V  
and output loading of  
CC(typ)  
CC(typ),  
the specified I /I and 30-pF load capacitance  
OL OH  
11. t  
, t  
, t  
and t  
transitions are measured when the outputs enter a high-impedance state.  
HZOE HZCE HZBE  
HZWE  
12. High-Z and Low-Z parameters are characterized and are not 100% tested.  
13. The internal write time of the memory is defined by the overlap of WE, CE = V , CE = V , BHE and/or BLE =V . All signals must be ACTIVE to initiate a write  
1
IL  
2
IH  
IL  
and any of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that  
terminates write.  
14. To achieve 55-ns performance, the read access should be Chip-enable controlled. In this case t  
is the critical parameter and t is satisfied when the addresses  
ACE  
SK  
are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable within 10 ns after the start of the read cycle.  
Document #: 38-05525 Rev. *F  
Page 4 of 10  
CYK128K16SCCB  
Switching Characteristics (Over the Operating Range) (continued)[10]  
CYK128K16SCCB-55  
CYK128K16SCCB-70  
Parameter  
tPWE  
Description  
WE Pulse Width  
Min.  
40  
50  
25  
0
Max.  
Min.  
55  
55  
25  
0
Max.  
Unit  
ns  
tBW  
BLE/BHE LOW to Write End  
Data Set-up to Write End  
Data Hold from Write End  
WE LOW to High Z[11, 12]  
WE HIGH to Low Z[11, 12]  
ns  
tSD  
ns  
tHD  
ns  
tHZWE  
tLZWE  
25  
25  
ns  
5
5
ns  
Switching Waveforms  
Read Cycle 1 (Address Transition Controlled)[14, 15, 16]  
tRC  
ADDRESS  
t
AA  
tSK  
PREVIOUS DATA VALID  
t
OHA  
DATA OUT  
DATA VALID  
Read Cycle 2 (OE Controlled)[14, 16]  
ADDRESS  
tRC  
tSK  
CE1  
tHZCE  
CE  
2
tACE  
BHE/BLE  
tDBE  
tHZBE  
tLZBE  
OE  
tHZOE  
tDOE  
tLZOE  
HIGH IMPEDANCE  
HIGH  
IMPEDANCE  
DATA OUT  
DATA VALID  
tLZCE  
CC  
Notes:  
15. Device is continuously selected. OE, CE = V and CE = V .  
IH  
1
IL  
2
16. WE is HIGH for Read Cycle.  
Document #: 38-05525 Rev. *F  
Page 5 of 10  
CYK128K16SCCB  
Switching Waveforms (continued)  
Write Cycle No. 1(WE Controlled)[13, 14, 17, 18, 19]  
t
WC  
ADDRESS  
t
SCE  
CE  
1
CE2  
t
t
HA  
AW  
t
t
PWE  
SA  
WE  
t
BW  
/
BHE BLE  
OE  
tHD  
t
SD  
t
HD  
VALIDDATA  
DATAI /O  
DON’T CARE  
t
HZOE  
Write Cycle 2 (CE1 or CE2 Controlled)[13, 14, 17, 18, 19]  
tWC  
ADDRESS  
CE1  
tSCE  
CE  
2
tSA  
tAW  
tHA  
tPWE  
WE  
tBW  
BHE/BLE  
OE  
tHD  
tSD  
VALID DATA  
DATA I/O  
DON’T CARE  
tHZOE  
Notes:  
17. Data I/O is high impedance if OE > V  
.
IH  
18. If Chip Enable goes INACTIVE simultaneously with WE = HIGH, the output remains in a high-impedance state.  
19. During the DON’T CARE period in the DATA I/O waveform, the I/Os are in output state and input signals should not be applied.  
Document #: 38-05525 Rev. *F  
Page 6 of 10  
CYK128K16SCCB  
Switching Waveforms (continued)  
Write Cycle 3 (WE Controlled, OE LOW)[18, 19]  
tWC  
ADDRESS  
CE1  
tSCE  
CE  
2
tBW  
tAW  
BHE/BLE  
tHA  
tSA  
tPWE  
WE  
t
HD  
tSD  
DON’T CARE  
DATA I/O  
VALID DATA  
tLZWE  
tHZWE  
Write Cycle No. 4 (BHE/BLE Controlled, OE LOW)[18, 19]  
t
WC  
ADDRESS  
CE  
1
CE2  
t
SCE  
t
t
HA  
AW  
tBW  
BHE/BLE  
WE  
t
SA  
tPWE  
t
HD  
t
D  
SD  
DON’TCARE  
DATAI /O  
VALIDDATA  
Document #: 38-05525 Rev. *F  
Page 7 of 10  
CYK128K16SCCB  
Truth Table[20]  
CE1  
H
CE2  
X
WE  
X
OE  
X
BHE BLE  
Inputs/Outputs  
High Z  
Mode  
Deselect/Power-down  
Deselect/Power-down  
Deselect/Power-down  
Read  
Power  
X
X
H
L
X
X
H
L
Standby (ISB  
Standby (ISB  
Standby (ISB  
Active (ICC  
Active (ICC  
)
X
L
X
X
High Z  
)
X
X
X
X
High Z  
)
L
H
H
L
Data Out (I/O0–I/O15  
)
)
L
H
H
L
H
L
Data Out (I/O0–I/O7);  
I/O8–I/O15 in High Z  
Read  
)
L
H
H
L
L
H
Data Out (I/O8–I/O15);  
I/O0–I/O7 in High Z  
Read  
Active (ICC)  
L
L
L
L
H
H
H
H
H
H
H
L
H
H
H
X
L
H
L
L
L
High Z  
High Z  
High Z  
Output Disabled  
Output Disabled  
Output Disabled  
Active (ICC  
Active (ICC  
Active (ICC  
)
)
H
L
)
L
Data In (I/O0–I/O15  
)
Write (Upper Byte and Lower Active (ICC)  
Byte)  
L
L
H
H
L
L
X
X
H
L
L
Data In (I/O0–I/O7);  
I/O8–I/O15 in High Z  
Write (Lower Byte Only)  
Active (ICC  
)
H
Data In (I/O8–I/O15);  
I/O0 –I/O7 in High Z  
Write (Upper Byte Only)  
Active (ICC)  
Ordering Information  
Speed  
(ns)  
Package  
Name  
Operating  
Range  
Ordering Code  
Package Type  
55  
CYK128K16SCCBU-55BVI  
CYK128K16SCCBU-70BVI  
CYK128K16SCBU-55BVXI  
CYK128K16SCBU-70BVXI  
BV48A  
BV48A  
48-ball Fine Pitch BGA (6.0 x 8.0 x 1.0 mm)  
48-ball Fine Pitch BGA (6.0 x 8.0 x 1.0 mm)  
Industrial  
Industrial  
70  
55  
BV48A 48-ball Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Industrial  
BV48A 48-ball Fine Pitch BGA (6.0 x 8.0 x 1.0 mm) (Pb-Free) Industrial  
70  
Note:  
20. H = Logic HIGH, L = Logic LOW, X = Don’t Care.  
Document #: 38-05525 Rev. *F  
Page 8 of 10  
CYK128K16SCCB  
Package Diagrams  
48-Lead VFBGA (6 x 8 x 1 mm) BV48A  
51-85150-*B  
MoBL is a registered trademark, and MoBL3 and More Battery Life are trademarks, of Cypress Semiconductor Corporation. All  
product and company names mentioned in this document are the trademarks of their respective holders.  
Document #: 38-05525 Rev. *F  
Page 9 of 10  
© Cypress Semiconductor Corporation, 2005. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be  
used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its  
products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.  
CYK128K16SCCB  
Document History Page  
Document Title: CYK128K16SCCB 2-Mbit (128K x 16) Pseudo Static RAM  
Document Number: 38- 05525  
Orig. of  
REV.  
**  
ECN NO. Issue Date Change  
Description of Change  
215621  
218183  
225600  
See ECN  
See ECN  
See ECN  
REF  
REF  
AJU  
New data sheet  
*A  
Changed ball E3 on package pinout from DNU to NC  
*B  
Change from Advance Information to Preliminary  
Changed Ordering code from CYK128K16SCCB to CYK128K16SCCBU  
Fixed package name typo in ‘Thermal Resistance’ table  
*C  
*D  
*E  
234474  
263150  
263811  
See ECN  
See ECN  
See ECN  
SYT  
PCI  
PCI  
Changed ball E3 on package pinout from NC to DNU  
Changed from Preliminary to Final  
Changed Ambient Temperature with Power Applied from –40°C to +85°C to  
–55°C to +125°C  
*F  
313999  
See ECN  
RKF  
Added Pb-Free parts to the Ordering information  
Document #: 38-05525 Rev. *F  
Page 10 of 10  
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