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TYN1010

型号:

TYN1010

描述:

SCR[ SCR ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

4 页

PDF大小:

58 K

TYN 0510 --->  
TYN 1010  
SCR  
FEATURES  
.
HIGH SURGE CAPABILITY  
.
HIGH ON-STATE CURRENT  
HIGH STABILITY AND RELIABILITY  
.
DESCRIPTION  
The TYN 0510 ---> TYN 1010 Family of Silicon Con-  
trolled Rectifiers uses a high performance glass passi-  
vated technology.  
G
A
K
This general purpose Family of Silicon Controlled  
Rectifiers is designed for power supplies up to  
400Hz on resistive or inductive load.  
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle)  
Tc = 100 °C  
Tc = 100 °C  
10  
A
T(RMS)  
I
Average on-state current  
(180° conduction angle, single phase circuit)  
6.4  
A
A
T(AV)  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
tp = 8.3 ms  
tp = 10 ms  
tp = 10 ms  
105  
100  
50  
TSM  
2
I t  
2
2
A s  
I t value  
dI/dt  
Critical rate of rise of on-state current  
50  
A/µs  
Gate supply : I = 100 mA di /dt = 1 A/µs  
G
G
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Unit  
V
Symbol  
Parameter  
TYN  
0510  
110  
210  
410  
610  
600  
810  
1010  
V
V
Repetitive peak off-state voltage  
50  
100  
200  
400  
800  
1000  
DRM  
RRM  
Tj = 125 °C  
1/4  
March 1995  
TYN 0510 ---> TYN 1010  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
2.5  
GATE CHARACTERISTICS (maximum values)  
P
= 1W  
P
= 10W (tp = 20 µs)  
I
= 4A (tp = 20 µs)  
V
= 5 V.  
RGM  
G (AV)  
GM  
FGM  
ELECTRICAL CHARACTERISTICS  
Symbol  
Test Conditions  
V =12V (DC) R =33Ω  
Value  
15  
Unit  
mA  
V
I
Tj=25°C  
Tj=25°C  
Tj= 110°C  
Tj=25°C  
MAX  
GT  
D
L
V
V =12V (DC) R =33Ω  
MAX  
MIN  
TYP  
1.5  
0.2  
2
GT  
D
L
V
V =V  
R =3.3kΩ  
V
GD  
D
DRM  
DRM  
L
tgt  
V =V  
I
G
= 40mA  
µs  
D
dI /dt = 0.5A/µs  
G
I
I
= 1.2 I  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj= 110°C  
Tj= 110°C  
TYP  
MAX  
MAX  
MAX  
50  
30  
mA  
mA  
V
L
G GT  
I
H
I = 100mA gate open  
T
V
ITM= 20A tp= 380µs  
1.6  
0.01  
2
TM  
I
I
V
V
Rated  
Rated  
mA  
DRM  
RRM  
DRM  
RRM  
dV/dt  
tq  
Linear slope up to V =67%V  
D
gate open  
MIN  
TYP  
200  
V/µs  
µs  
DRM  
V =67%V  
DRM  
dI /dt=30 A/µs  
I
= 20A V = 25V  
Tj= 110°C  
70  
D
TM  
TM  
R
dV /dt= 50V/µs  
D
2/4  
TYN 0510 ---> TYN 1010  
Fig.1 : Maximum average power dissipation versus  
Fig.2 : Correlation between maximum average power  
average on-state current.  
dissipation and maximum allowable temperatures (T  
amb  
for different thermal resistances heatsink +  
and T  
)
case  
contact.  
P (W)  
P (W)  
12  
Tcase (oC)  
12  
O
Rth = 0o C/W  
360  
2o C/W  
4o C/W  
6o C/W  
-100  
-105  
-110  
-115  
-120  
-125  
10  
10  
8
DC  
8
= 180o  
6
6
= 120o  
=
180o  
4
2
0
=
90 o  
4
2
0
= 60o  
=
30o  
I
(A)  
T(AV)  
Tamb (oC)  
0
1
2
3
4
5
6
7
8
9
0
20  
40  
60  
80  
100 120 140  
Fig.3  
:
Average on-state current versus case  
Fig.4 : Relative variation of thermal impedance versus  
temperature.  
pulse duration.  
I
(A)  
Zth/Rth  
1
T(AV)  
12  
10  
8
DC  
Zth(j-c)  
0.1  
Zth(j-a)  
6
= 180o  
4
2
Tcase (oC)  
10 20 30 40 50 60 70 80 90 100 110 120 130  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
0
0
1E-2  
1E-1  
1E+0  
1E+1  
Fig.5 : Relative variation of gate trigger current versus  
Fig.6 : Non repetitive surge peak on-state current  
junction temperature.  
versus number of cycles.  
3/4  
TYN 0510 ---> TYN 1010  
Fig.7 : Non repetitive surge peak on-state current for a  
Fig.8 : On-state characteristics (maximum values).  
sinusoidal pulse with width  
corresponding value of I t.  
:
t
10 ms, and  
2
PACKAGE MECHANICAL DATA  
TO220AB Plastic  
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min. Max.  
A
H
A
B
C
D
F
G
H
I
J
L
M
N
O
P
10.00 10.40 0.393 0.409  
15.20 15.90 0.598 0.625  
13.00 14.00 0.511 0.551  
G
J
I
D
6.20  
3.50  
2.65  
4.40  
3.75  
1.23  
0.49  
2.40  
4.80  
1.14  
0.61  
6.60 0.244 0.259  
4.20 0.137 0.165  
2.95 0.104 0.116  
4.60 0.173 0.181  
3.85 0.147 0.151  
1.32 0.048 0.051  
0.70 0.019 0.027  
2.72 0.094 0.107  
5.40 0.188 0.212  
1.70 0.044 0.066  
0.88 0.024 0.034  
B
C
F
L
O
P
M
= N =  
Cooling method : C  
Marking : type number  
Weight : 2.3 g  
Recommended torque value : 0.8 m.N.  
Maximum torque value : 1 m.N.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability  
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.  
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems  
without express written approval of SGS-THOMSON Microelectronics.  
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-  
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
4/4  
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TYN0510/F3 [ 10A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

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TYN0512 高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ] 5 页

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TYN0512/F3 [ 12A, 50V, SCR, TO-220, TO-220, 2 PIN ] 5 页

STMICROELECTRONICS

TYN0512/F5 [ 12A, 50V, SCR, TO-220, TO-220, 3 PIN ] 5 页

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TYN0516 可控硅16A[ 16A SCRs ] 7 页

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TYN0516/F3 [ 16A, 50V, SCR, TO-220, TO-220, 2 PIN ] 4 页

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