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TYNX40_06

型号:

TYNX40_06

描述:

可控硅40A[ 40A SCRS ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

6 页

PDF大小:

66 K

TYNx40 Series  
®
40A SCRS  
STANDARD  
Table 1: Main Features  
Symbol  
A
Value  
Unit  
IT(RMS)  
40  
A
G
K
VDRM/VRRM  
IGT  
600 to 1000  
35  
V
A
mA  
DESCRIPTION  
K
The TYNx40 series is suitable for applications  
where in-rush current conditions are critical, such  
as overvoltage crowbar protection circuits in  
power supplies, in-rush current limiting circuits,  
solid state relays (in back to back configuration),  
welding equipment, high power motor control  
circuits.  
Using clip assembly technology, they provide a  
superior performance in high surge current  
capabilites.  
A
G
TO-220AB  
Table 2: Order Codes  
Part Numbers  
Marking  
TYN640  
TYN840  
TYN1040  
TYN640RG  
TYN840RG  
TYN1040RG  
Table 3: Absolute Ratings (limiting values)  
Symbol  
Parameter  
Value  
40  
Unit  
A
IT(RMS)  
Tc = 95°C  
Tc = 95°C  
RMS on-state current (180° conduction angle)  
Average on-state current (180° conduction angle)  
IT(AV)  
25  
A
tp = 8.3 ms  
480  
460  
1060  
ITSM  
Tj = 25°C  
Non repetitive surge peak on-state current  
A
tp = 10 ms  
²
²
I t  
I t Value for fusing  
A2S  
tp = 10 ms Tj = 25°C  
Critical rate of rise of on-state current IG =  
2 x IGT , tr 100 ns  
Tj = 125°C  
dI/dt  
F = 60 Hz  
tp = 20 µs  
50  
A/µs  
IGM  
Tj = 125°C  
Tj = 125°C  
Peak gate current  
4
1
A
PG(AV)  
Average gate power dissipation  
W
Tstg  
Tj  
- 40 to + 150  
- 40 to + 125  
Storage junction temperature range  
Operating junction temperature range  
°C  
V
VRGM  
Maximum peak reverse gate voltage  
5
February 2006  
REV. 5  
1/6  
TYNx40 Series  
Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)  
Symbol  
Test Conditions  
Value  
3.5  
Unit  
MIN.  
MAX.  
MAX.  
IGT  
mA  
VD = 12 V  
RL = 33 Ω  
35  
VGT  
VGD  
IH  
1.3  
V
V
VD = VDRM RL = 3.3 kΩ  
IT = 500 mA Gate open  
IG = 1.2 x IGT  
Tj = 125°C  
MIN.  
MAX.  
MAX.  
MIN.  
0.2  
75  
mA  
mA  
V/µs  
V
IL  
150  
1000  
1.6  
0.85  
10  
VD = 67 % VDRM Gate open  
ITM = 80 A tp = 380 µs  
Threshold voltage  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
dV/dt  
VTM  
Vt0  
MAX.  
MAX.  
MAX.  
V
Rd  
Dynamic resistance  
mΩ  
µA  
mA  
5
IDRM  
IRRM  
VDRM = VRRM  
MAX.  
4
Table 5: Thermal resistance  
Symbol  
Parameter  
Value  
Unit  
°C/W  
°C/W  
Rth(j-c)  
Rth(j-a)  
Junction to case (DC)  
0.8  
60  
Junction to ambient (DC)  
Figure 1: Maximum average power dissipation  
versus average on-state current  
Figure 2: Average and D.C. on-state current  
versus case temperature  
I (A)  
T(AV)  
P(W)  
50  
40  
30  
20  
10  
0
40  
α = 180°  
35  
D.C.  
30  
25  
20  
15  
α = 180°  
360°  
10  
5
I
(A)  
T(AV)  
T
(°C)  
case  
α
0
0
5
10  
15  
20  
25  
30  
0
25  
50  
75  
100  
125  
2/6  
TYNx40 Series  
Figure 3: Relative variation of thermal  
impedance versus pulse duration  
Figure 4: Relative variation of gate trigger  
current, holding current and latching current  
versus junction temperature  
I
,I ,I [T ] / I ,I ,I [T =25°C]  
K=[Z /R  
]
GT  
H
L
j
GT  
H
L
j
th th  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.00  
0.10  
0.01  
Z
th(j-c)  
IGT  
Z
th(j-a)  
IH & IL  
t (s)  
p
T (°C)  
j
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2  
5E+2  
-40  
-20  
0
20  
40  
60  
80  
100  
120  
140  
Figure 5: Surge peak on-state current versus  
number of cycles  
Figure 6: Non-repetitive surge peak on-state  
current for a sinusoidal pulse with width  
tp < 10 ms, and corresponding values of I²t  
I
(A)  
TSM  
I
(A), I2t (A2s)  
TSM  
500  
450  
400  
350  
300  
250  
200  
150  
100  
50  
5000  
Tj initial = 25°C  
tp=10ms  
One cycle  
ITSM  
I2t  
Non repetitive  
Tj initial=25°C  
1000  
Repetitive  
TC=95°C  
dI/dt limitation  
Number of cycles  
t (ms)  
p
0
100  
1
10  
100  
1000  
0.01  
0.10  
1.00  
10.00  
Figure 7: On-state characteristics (maximum  
values)  
I
(A)  
TM  
500  
100  
Tj max.:  
Vt0=0.85V  
Rd=10mΩ  
Tj=max  
10  
Tj=25°C  
V
(V)  
TM  
1
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
3/6  
TYNx40 Series  
Figure 8: Ordering Information Scheme  
TYN  
6
40 RG  
Standard SCR series  
Voltage  
6 = 600V  
8 = 800V  
10 = 100V  
Current  
40 = 40A  
Packing mode  
RG = Tube  
Table 6: Product Selector  
Voltage (xxx)  
Part Numbers  
Sensitivity  
35 mA  
Package  
600 V  
800 V  
1000 V  
TYNx40  
X
X
X
TO-220AB  
4/6  
TYNx40 Series  
Figure 9: TO-220AB Package Mechanical Data  
DIMENSIONS  
Millimeters Inches  
Min. Typ. Max. Min. Typ. Max.  
REF.  
C
B
A
15.20  
15.90 0.598  
0.625  
Ø I  
b2  
a1  
3.75  
0.147  
L
a2 13.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
F
B
b1  
b2  
C
c1  
c2  
e
10.00  
0.61  
1.23  
4.40  
0.49  
2.40  
2.40  
6.20  
3.75  
A
I4  
l3  
l2  
c2  
a1  
a2  
F
ØI  
M
c1  
b1  
I4 15.80 16.40 16.80 0.622 0.646 0.661  
e
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
l2  
l3  
M
2.60  
0.102  
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These  
packages have a Lead-free second level interconnect . The category of second level interconnect is  
marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The  
maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an  
ST trademark. ECOPACK specifications are available at: www.st.com.  
Table 7: Ordering Information  
Ordering type  
TYN640RG  
TYN840RG  
TYN1040RG  
Marking  
TYN640  
TYN840  
TYN1040  
Package  
Weight Base qty Delivery mode  
TO-220AB  
2.3 g  
50  
Tube  
Table 8: Revision History  
Date  
Revision  
Description of Changes  
Apr-2002  
4A  
Last update.  
TO-220AB delivery mode changed from bulk to tube.  
ECOPACK statement added.  
13-Feb-2006  
5
5/6  
TYNx40 Series  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2006 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
6/6  
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