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HYS72D64500GR-8-B

型号:

HYS72D64500GR-8-B

描述:

注册的DDR SDRAM模块[ Registered DDR SDRAM-Modules ]

品牌:

INFINEON[ Infineon ]

页数:

39 页

PDF大小:

991 K

Data Sheet, Rev. 1.03, Jan. 2004  
HYS72D32500GR–[7F/7/8]–B  
HYS72D64500GR–[7F/7/8]–B  
HYS72D1285[20/21]GR–[7F/7]–B  
HYS72D128521GR–8–B  
Registered DDR SDRAM-Modules  
DDR SDRAM  
Memory Products  
N e v e r s t o p t h i n k i n g .  
Edition 2004-01  
Published by Infineon Technologies AG,  
St.-Martin-Strasse 53,  
E
81669 München, Germany  
P
© Infineon Technologies AG 2004.  
S
All Rights Reserved.  
8
©Attentionplease!
A
The information herein is given to describe certain components and shall not be considered as a guarantee of  
characteristics.  
A
Terms of delivery and rights to technical change reserved.  
T
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding  
c
circuits, descriptions and charts stated herein.  
T
Infineon Technologies is an approved CECC manufacturer.  
W
c
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
I
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide  
F(www.infineon.com).
I
Warnings  
W
Due to technical requirements components may contain dangerous substances. For information on the types in  
D
question please contact your nearest Infineon Technologies Office.  
q
Infineon Technologies Components may only be used in life-support devices or systems with the express written  
In  
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the  
afailureofthatlife-supportdeviceorsystem, ortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifee  
ot  
support devices or systems are intended to be implanted in the human body, or to support and/or maintain and  
d
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other  
apersonsmaybeendangered.
b
Data Sheet, Rev. 1.03, Jan. 2004  
HYS72D32500GR–[7F/7/8]–B  
HYS72D64500GR–[7F/7/8]–B  
HYS72D1285[20/21]GR–[7F/7]–B  
HYS72D128521GR–8–B  
Registered DDR SDRAM-Modules  
DDR SDRAM  
Memory Products  
N e v e r s t o p t h i n k i n g .  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
HYS72D32500GR–[7F/7/8]–B, HYS72D64500GR–[7F/7/8]–B, HYS72D1285[20/21]GR–[7F/7]–B  
Revision History:  
Rev. 1.03  
2004-01  
Previous Version:  
V.092  
Page  
all  
Subjects (major changes since last revision)  
Editorial changes  
We Listen to Your Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
techdoc.mp@infineon.com  
Data Sheet  
4
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Table of Contents  
1
1.1  
1.2  
Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
2
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Current Specification and Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
3.1  
3.2  
3.3  
4
5
6
SPD Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32  
Application Note . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Data Sheet  
5
Rev. 1.03, 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Overview  
1
Overview  
1.1  
Features  
184-Pin Registered 8-Byte Dual-In-Line  
DDR SDRAM Module for “1U” PC, Workstation and Server main memory applications  
One rank 32M × 72, 64M × 72 and two ranks 128M × 72 organization  
JEDEC standard Double Data Rate Synchronous DRAMs (DDR SDRAM) with a single + 2.5 V (± 0.2 V) power  
supply  
Built with DDR SDRAMs in 66-Lead TSOPII package  
Programmable CAS Latency, Burst Length, and Wrap Sequence (Sequential & Interleave)  
Auto Refresh (CBR) and Self Refresh  
All inputs and outputs SSTL_2 compatible  
Re-drive for all input signals using register and PLL devices.  
Serial Presence Detect with E2PROM  
Low Profile Modules form factor:  
133.35 mm × 30,48 mm (1.2”) × 4.00 mm  
(6,80 mm with stacked components)  
Based on JEDEC standard reference card layouts Raw Card L,M,N  
Gold plated contacts  
Table 1  
Performance  
Part Number Speed Code  
Module Speed Grade  
Component Module  
–7F  
–7  
DDR266A  
–8  
DDR200A  
Unit  
DDR266F  
PC2100  
143  
PC2100  
143  
PC1600  
125  
max. Clock  
Frequency  
@ CL = 2.5 fCK  
MHz  
MHz  
@ CL = 2  
fCK  
133  
133  
100  
1.2  
Description  
The HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B are low profile versions of the standard Registered DIMM  
modules with 1.2” inch (30,48 mm) height for 1U Server Applications. The Low Profile DIMM versions are available  
as 32M × 72 (256MB), 64M × 72 (512MB) and 128M × 72 (1 GB).  
The memory array is designed with Double Data Rate Synchronous DRAMs for ECC applications. All control and  
address signals are re-driven on the DIMM using register devices and a PLL for the clock distribution. This reduces  
capacitive loading to the system bus, but adds one cycle to the SDRAM timing. A variety of decoupling capacitors  
are mounted on the PC board. The DIMMs feature serial presence detect based on a serial E2PROM device using  
the 2-pin I2C protocol. The first 128 bytes are programmed with configuration data and the second 128 bytes are  
available to the customer.  
Data Sheet  
6
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Overview  
Table 2  
Ordering Information  
Product Type  
Compliance Code  
Description  
SDRAM  
Technology  
PC2100 (CL = 2):  
HYS72D32500GR-7F-B  
HYS72D32500GR-7-B  
HYS72D64500GR-7F-B  
HYS72D64500GR-7-B  
PC2100R-20220-L  
PC2100R-20330-L  
PC2100R-20220-M  
PC2100R-20330-M  
one rank 256 MB Registered DIMM  
one rank 256 MB Registered DIMM  
one rank 512 MB Registered DIMM  
one rank 512 MB Registered DIMM  
two ranks 1 GByte Registered DIMM  
256 Mbit (x8)  
256 Mbit (x8)  
256 Mbit (x4)  
256 Mbit (x4)  
HYS72D128520GR-7F-B PC2100R-20220-N  
256 MBit (x4)  
(stacked with  
soldering process)  
HYS72D128520GR-7-B  
PC2100R-20330-N  
two ranks 1 GByte Registered DIMM  
two ranks 1 GByte Registered DIMM  
two ranks 1 GByte Registered DIMM  
256 MBit (x4)  
(stacked with  
soldering process)  
HYS72D128521GR-7F-B PC2100R-20220-N  
256 MBit (x4)  
(stacked with laser  
welding process)  
HYS72D128521GR-7-B  
PC2100R-20330-N  
256 MBit (x4)  
(stacked with laser  
welding process)  
PC1600 (CL = 2):  
HYS72D32500GR-8-B  
HYS72D64500GR-8-B  
HYS72D128521GR-8-B  
PC1600R-20220-L  
PC1600R-20220-M  
PC1600R-20220-M  
one rank 256 MB Registered DIMM  
one rank 512 MB Registered DIMM  
two ranks 1GByte Registered DIMM  
256 Mbit (x8)  
256 Mbit (x4)  
256Mbit (x4)  
(stacked with laser  
welding process)  
Note: All “product type” end with a place code designating the silicon-die revision. Reference information available  
on request. Example: HYS72D32500GR-7-B, indicating rev. C dies are used for SDRAM components. The  
“compliance code” is printed on the module labels describing the speed sort (for example “PC2100”), the  
latencies and SPD code definition (for example “20330” means CAS latency of 2.0 clocks, RCD1) latency of  
3 clocks, Row Precharge latency of 3 clocks, and JEDEC SPD code definiton version 0), and the Raw Card  
used for this module.  
1) RCD: Row-Column-Delay  
Data Sheet  
7
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
2
Pin Configuration  
Table 3  
Symbol  
Pin Definitions and Functions  
Type  
Function  
A0 – A11, A12  
BA0, BA1  
DQ0 – DQ63  
CB0 – CB7  
RAS  
Input  
Address Inputs (A12 for 256 MB & 512 MB based modules)  
Bank Selects  
Input  
Input/Output  
Input/Output  
Input  
Data Input/Output  
Check Bits (×72 organization only)  
Row Address Strobe  
Column Address Strobe  
Read/Write Input  
CAS  
Input  
WE  
Input  
CKE0, CKE1  
DQS0 – DQS8  
CK0, CK0  
DM0 – DM8  
DQS9 – DQS17  
CS0, CS1  
VDD  
Input  
Clock Enable  
Input/Output  
Input  
SDRAM low data strobes  
Differential Clock Input  
SDRAM low data mask  
high data strobes  
Input  
Input/Output  
Input  
Chip Selects  
Supply  
Supply  
Supply  
Output  
Supply  
Supply  
Input  
Power (+2.5 V)  
VSS  
Ground  
VDDQ  
I/O Driver power supply  
VDDID  
VDD Indentification flag  
VDDSPD  
EEPROM power supply  
I/O reference supply  
Serial bus clock  
VREF  
SCL  
SDA  
Output  
Input  
Serial bus data line  
slave address select  
no connect  
SA0 – SA2  
NC  
Input  
DU  
Input  
don’t use  
RESET  
Input  
Reset pin (forces register inputs low) *)  
*) for detailed description of the Power Up and Power Management on DDR Registered DIMMs see the Application Note at the  
end of this datasheet  
Data Sheet  
8
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
Table 4  
Density  
Address Format  
Organization Memory  
Ranks  
SDRAMs # of  
SDRAMs  
# of  
Refresh Period Interval  
row/rank/  
columns  
bits  
256 MB  
512 MB  
1 GB  
32M x 72  
64M × 72  
128M × 72  
1
1
2
256Mbit  
32M × 8  
9
13 / 2 / 10  
8K  
8K  
8K  
64 ms 7.8 µs  
64 ms 7.8 µs  
64 ms 7.8 µs  
256Mbit  
64M × 4  
18  
13 / 2 / 11  
256Mbit  
36 (stacked) 13 / 2 / 11  
64M × 4  
Table 5  
Pin Configuration  
PIN# Symbol  
PIN#  
48  
Symbol  
PIN#  
94  
Symbol  
DQ4  
PIN#  
Symbol  
A10  
1
VREF  
DQ0  
VSS  
A0  
141  
142  
143  
144  
2
49  
CB2  
VSS  
CB3  
BA1  
95  
DQ5  
CB6  
3
50  
96  
VDDQ  
VDDQ  
4
DQ1  
DQ0  
DQ2  
VDD  
51  
97  
DM0/DQS9  
DQ6  
CB7  
5
52  
98  
KEY  
6
KEY  
99  
DQ7  
145  
146  
147  
148  
149  
150  
151  
152  
153  
154  
155  
156  
157  
158  
159  
160  
161  
162  
163  
164  
165  
166  
167  
168  
169  
VSS  
7
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
DQ32  
VDDQ  
DQ33  
DQS4  
DQ34  
VSS  
100  
101  
102  
103  
104  
105  
106  
107  
108  
109  
110  
111  
112  
113  
114  
115  
116  
117  
118  
119  
120  
121  
122  
123  
VSS  
DQ36  
DQ37  
VDD  
8
DQ3  
NC  
NC  
9
NC  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
RESET  
VSS  
NC  
DM4/DQS13  
DQ38  
DQ39  
VSS  
VDDQ  
DQ8  
DQ9  
DQS1  
VDDQ  
DU  
DQ12  
DQ13  
DM1/DQS10  
VDD  
BA0  
DQ35  
DQ40  
VDDQ  
WE  
DQ44  
RAS  
DQ14  
DQ15  
CKE1  
VDDQ  
DQ45  
VDDQ  
DU  
VSS  
DQ41  
CAS  
VSS  
CS0  
DQ10  
DQ11  
CKE0  
VDDQ  
DQ16  
DQ17  
DQS2  
VSS  
CS1  
NC  
DM5/DQS14  
VSS  
DQS5  
DQ42  
DQ43  
VDD  
NC  
DQ20  
NC / A12  
VSS  
DQ46  
DQ47  
NC  
DQ21  
A11  
VDDQ  
DQ48  
DQ49  
VSS  
DM2/DQS11  
VDD  
DQ52  
DQ53  
NC  
A9  
DQ18  
A7  
DQ22  
A8  
DU  
VDD  
VDDQ  
DU  
DQ23  
DM6/DQS15  
Data Sheet  
9
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
Table 5  
Pin Configuration (cont’d)  
PIN# Symbol  
PIN#  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
Symbol  
VDDQ  
DQS6  
DQ50  
DQ51  
VSS  
PIN#  
124  
125  
126  
127  
128  
129  
130  
131  
132  
133  
134  
135  
136  
137  
138  
139  
140  
Symbol  
VSS  
PIN#  
170  
171  
172  
173  
174  
175  
176  
177  
178  
179  
180  
181  
182  
183  
184  
Symbol  
DQ54  
DQ55  
VDDQ  
NC  
31  
DQ19  
A5  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
A6  
DQ24  
VSS  
DQ28  
DQ29  
VDDQ  
DQ25  
DQS3  
A4  
DQ60  
DQ61  
VSS  
VDDID  
DQ56  
DQ57  
VDD  
DM3/DQS12  
A3  
VDD  
DQ30  
VSS  
DM7/DQS16  
DQ62  
DQ63  
VDDQ  
SA0  
DQ26  
DQ27  
A2  
DQS7  
DQ58  
DQ59  
VSS  
DQ31  
CB4  
VSS  
CB5  
A1  
VDDQ  
SA1  
CB0  
CB1  
VDD  
NC  
CK0  
SA2  
SDA  
CK0  
VDDSPD  
SCL  
VSS  
DQS8  
VSS  
DM8/DQS17  
Note: A12 is used for 256Mbit and 512Mbit based modules only  
Data Sheet  
10  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
RS0  
DQS0  
DM0/DQS9  
DQS4  
DM4/DQS13  
DM  
I/O 0  
S
DQS  
DQS  
DQS  
DQS  
S
DM  
I/O 0  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
DQ0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
D4  
D0  
DQS5  
DM5/DQS14  
DQS1  
DM1/DQS10  
DQS  
DM  
S
S
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ8  
DQ9  
D5  
D1  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
DQS2  
DM2/DQS11  
DQS6  
DM6/DQS15  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
S
DQS  
S
DM  
I/O 0  
I/O 1  
I/O 2  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
DQ16  
D6  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
D2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS7  
DM7/DQS16  
DQS3  
DM3/DQS12  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
S
DQS  
DM  
I/O 0  
S
DQS  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
DQ24  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
D7  
D3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
DQS8  
DM8/DQS17  
VDDSPD  
VDDQ  
Serial PD  
D0- D8  
Serial PD  
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 4  
I/O 5  
I/O 6  
I/O 7  
S
DQS  
VDD  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
D0-D8  
D0-D8  
SCL  
SDA  
D8  
VREF  
VSS  
A0 A1 A2  
WP  
D0-D8  
SA0 SA1 SA2  
VDDID  
Strap: see Note 4  
Notes:  
1. DQ-to-I/O wiring may be changed within a byte.  
2. DQ/DQS/DM/CKE/S relationships must be main-  
tained as shown.  
3. DQ/DQS resistors should be 22 Ohms.  
4. VDDID strap connections (for memory device VDD  
S0  
RS0 -> CS: SDRAMs D0-D8  
R
E
G
I
S
T
E
R
BA0-BA1  
A0-An7  
RAS  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D8  
RA0-RAn7 -> A0-An7: SDRAMs D0-D8  
RRAS -> RAS: SDRAMs D0-D8  
RCAS -> CAS: SDRAMs D0-D8  
RCKE0 -> CKE: SDRAMs D0- D8  
RWE -> WE: SDRAMs D0-D8  
,
V
):  
DDQ  
STRAP OUT (OPEN): VDD = VDDQ  
STRAP IN (VSS): VDD VDDQ  
CAS  
CKE0  
WE  
.
5. SDRAM placement alternates between the back  
and front sides of the DIMM.  
CK0, CK0 --------- PLL*  
* Wire per Clock Loading Table/Wiring Diagrams  
PCK  
PCK  
6. Address and control resistors should be 22 Ohms.  
7. A13 is not wired for raw card A.  
RESET  
Figure 1  
Block Diagram: One Rank 32M × 72 DDR SDRAM DIMM Module (×8 components)  
HYS72D32500GR on Raw Card L  
Data Sheet  
11  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
VSS  
RS0  
DQS0  
DQS9  
DQS  
I/O 0  
S
DM  
DQS  
I/O 0  
S
DM  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D0  
D9  
DQS1  
DQS2  
DQS3  
DQS10  
DQS11  
DQS12  
DM  
DM  
DM  
DQS  
S
DM  
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ8  
DQ12  
DQ13  
DQ14  
DQ15  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ9  
D1  
D10  
DQ10  
DQ11  
DQS  
S
DQS  
S
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
D11  
D2  
DM  
S
S
DQS  
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D12  
D3  
DQS4  
DQS13  
V
DDSPD  
Serial PD  
D0-D17  
D0-D17  
DQS  
DM  
DM  
DM  
S
S
DM  
DM  
DQS  
VDDQ  
VDD  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D4  
D13  
VREF  
VSS  
D0-D17  
D0-D17  
DQS5  
DQS6  
DQS14  
DQS15  
DQS16  
DQS17  
DQS  
S
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
VDDID  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
Strap: see Note 4  
D5  
D14  
Serial PD  
S
DM  
DQS  
S
DQS  
SCL  
SDA  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
A0 A1 A2  
WP  
D15  
D6  
SA0 SA1  
SA2  
DQS7  
DQS8  
DM  
DM  
DM  
S
DQS  
DQS  
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
Notes:  
1. DQ-to-I/O wiring may be changed  
within a byte.  
2. DQ/DQS/CKE/S relationships  
must be maintained as shown.  
3. DQ/DQS resistors should be 22  
Ohms.  
D7  
D16  
DQS  
S
S
DM  
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D17  
D8  
4. V  
strap connections  
DDID  
(for memory device V , V  
DD  
):  
DDQ  
STRAP OUT (OPEN): V = V  
DD  
DDQ  
STRAP IN (V ): V V .  
DDQ  
SS  
DD  
R
E
G
I
S
T
E
R
S0  
RS0 -> CS : SDRAMs D0-D17  
5. Address and control resistors  
should be 22 Ohms.  
6. A13 is not wired for raw card B.  
BA0-BA1  
A0-An6  
RAS  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D17  
RA0-RAn6 -> A0-An6: SDRAMs D0-D17  
RRAS -> RAS: SDRAMs D0-D17  
RCAS -> CAS: SDRAMs D0-D17  
RCKE0A -> CKE: SDRAMs D0-D17  
RWE -> WE: SDRAMs D0-D17  
CAS  
CKE0  
WE  
CK0, CK0 --------- PLL*  
* Wire per Clock Loading Table/Wiring Diagrams  
PCK  
PCK  
RESET  
Figure 2  
Block Diagram: One Rank 64M × 72 DDR SDRAM DIMM Module (×4 components)  
HYS72D64500GR on Raw Card M  
Data Sheet  
12  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Pin Configuration  
VSS  
RS1  
RS0  
DQS0  
DM0/DQS9  
DQS  
I/O 0  
S
DM  
DQS  
I/O 3  
I/O 2  
I/O 1  
I/O 0  
S
DM  
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
S
DQS  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
S
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DQ0  
DQ1  
DQ2  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
I/O 1  
I/O 2  
I/O 3  
D0  
D18  
D9  
D27  
DQS1  
DQS2  
DQS3  
DM1/DQS10  
DQS  
DM  
DQS  
DM  
DQS  
DQS  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ8  
DQ9  
DQ10  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D1  
D19  
D10  
D28  
DM2/DQS11  
DQS  
DQS  
I/O 0  
DQS  
DQS  
DM  
DM  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ16  
DQ17  
DQ18  
DQ19  
DQ20  
DQ21  
DQ22  
DQ23  
I/O 1  
I/O 2  
I/O 3  
D11  
D29  
D2  
D20  
DM3/DQS12  
DM  
DM  
DQS  
DQS  
I/O 0  
DQS  
DQS  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ24  
DQ25  
DQ26  
DQ27  
DQ28  
DQ29  
DQ30  
DQ31  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D12  
D30  
D3  
D21  
DQS4  
DM4/DQS13  
DQS  
DQS  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DM  
DQS  
DQS  
I/O 0  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ32  
DQ33  
DQ34  
DQ35  
DQ36  
DQ37  
DQ38  
DQ39  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D4  
D22  
D13  
D31  
DQS5  
DQS6  
DQS7  
DM5/DQS14  
DQS  
DQS  
DQS  
DQS  
I/O 0  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ40  
DQ41  
DQ42  
DQ43  
DQ44  
DQ45  
DQ46  
DQ47  
I/O 1  
I/O 2  
I/O 3  
D5  
D23  
D14  
D32  
DM6/DQS15  
DM  
DM  
DQS  
DQS  
DQS  
S
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ48  
DQ49  
DQ50  
DQ51  
DQ52  
DQ53  
DQ54  
DQ55  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
D15  
D33  
D6  
DM7/DQS16  
DM  
DQS  
DM  
DM  
DQS  
I/O 0  
DQS  
DQS  
S
DM  
S
S
S
I/O 0  
I/O 1  
I/O 2  
I/O 3  
DQ56  
DQ57  
DQ58  
DQ59  
DQ60  
DQ61  
DQ62  
DQ63  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D7  
D25  
D16  
D34  
DQS8  
DM8/DQS17  
DM  
DM  
DQS  
DQS  
I/O 0  
DQS  
DQS  
S
S
S
DM  
S
DM  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
CB0  
CB1  
CB2  
CB3  
CB4  
CB5  
CB6  
CB7  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 0  
I/O 1  
I/O 2  
I/O 3  
I/O 1  
I/O 2  
I/O 3  
D8  
D26  
D17  
D35  
V
DDSPD  
VDDQ  
VDD  
Serial PD  
D0-D35  
CK0, CK0 --------- PLL*  
* Wire per Clock Loading Table/Wiring Diagrams  
Serial PD  
SCL  
SDA  
D0-D35  
D0-D35  
D0-D35  
VREF  
VSS  
VDDID  
A0 A1 A2  
WP  
S0  
S1  
RSO  
: SDRAMs D0-D17  
-> S  
RS1 -> S : SDRAMs D18-D35  
R
E
G
I
S
T
E
R
SA0 SA1 SA2  
Strap: see Note 4  
BA0-BA1  
RBA0-RBA1 -> BA0-BA1: SDRAMs D0-D35  
RA0-RA13 -> A0-A13: SDRAMs D0- D35  
RRAS -> RAS: SDRAMs D0-D35  
Notes:  
1. DQ-to-I/O wiring may be changed within a byte.  
2. DQ/DQS/DM/CKE/S relationships must be maintained as shown.  
3. DQ/DQS resistors should be 22 Ohms.  
4. VDDID strap connections (for memory device VDD, VDDQ):  
A0-A13  
RAS  
CAS  
RCAS -> CAS: SDRAMs D0-D35  
CKE0  
CKE1  
RCKE0 -> CKE: SDRAMs D0-D17  
RCKE1 -> CKE: SDRAMs D18-D35  
STRAP OUT (OPEN): VDD = VDDQ  
STRAP IN (VSS): VDD VDDQ  
.
RWE -> WE: SDRAMs D0-D35  
WE  
5. Address and control resistors should be 22 Ohms.  
6. Each Chip Select and CKE pair alternate between decks for ther-  
mal enhancement.  
PCK  
PCK  
RESET  
Figure 3  
Block Diagram: Two Ranks 128M × 72 DDR SDRAM DIMM Modules (×4 components)  
HYS72D128520GR on Raw Card N  
Data Sheet  
13  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
3
Electrical Characteristics  
Operating Conditions  
3.1  
Table 6  
Absolute Maximum Ratings  
Parameter  
Symbol  
Values  
min.  
–0.5  
–0.5  
–55  
Unit  
max.  
3.6  
3.6  
+150  
1
Input/Output voltage relative to VSS  
Power supply voltage on VDD/VDDQ to VSS  
Storage temperature range  
VIN, VOUT  
VDD, VDDQ  
TSTG  
V
V
oC  
W
mA  
Power dissipation (per SDRAM component)  
Data out current (short circuit)  
PD  
50  
IOS  
Attention: Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded. Functional  
operation should be restricted to recommended operation conditions. Exposure to higher than  
recommended voltage for extended periods of time affect device reliability  
Table 7  
Supply Voltage Levels  
Parameter  
Symbol  
Values  
min.  
2.3  
Unit/  
Notes  
nom.  
2.5  
max.  
2.7  
Device Supply Voltage  
Output Supply Voltage  
Input Reference Voltage  
Termination Voltage  
VDD  
V
VDDQ  
VREF  
VTT  
2.3  
2.5  
2.7  
V 1)  
0.49 × VDDQ 0.5 × VDDQ  
REF – 0.04 VREF  
0.51 × VDDQ V 2)  
V
V
REF + 0.04  
V 3)  
V
EEPROM supply voltage  
VDDSPD  
2.3  
2.5  
3.6  
Note:  
1. Under all conditions, VDDQ must be less than or equal to VDD  
2. Peak to peak AC noise on VREF may not exceed ± 2% VREF (DC)  
.
V
REF is also expected to track noise variations in VDDQ.  
3. VTT of the transmitting device must track VREF of the receiving device  
.
Table 8  
DC Operating Conditions (SSTL_2 Inputs)  
(VDDQ = 2.5 V, TA = 70 °C, Voltage Referenced to VSS  
)
Parameter  
Symbol  
Values  
min.  
Unit/  
Notes  
max.  
V 1)  
V
DC Input Logic High  
DC Input Logic Low  
Input Leakage Current  
Output Leakage Current  
VIH, (DC)  
VIL, (DC)  
IIL  
V
REF +0.15  
V
V
5
DDQ +0.3  
REF 0.15  
–0.30  
–5  
µA 1)  
µA 2)  
–5  
5
IOL  
Note:  
1. The relationship between the VDDQ of the driving device and the VREF of the receiving device is what determines  
noise margins. However, in the case of VIH (max.) (input overdrive), it is the VDDQ of the receiving device that is  
referenced. In the case where a device is implemented such that it supports SSTL_2 inputs but has no SSTL_2  
outputs (such as a translator), and therefore no VDDQ supply voltage connection, inputs must tolerate input  
overdrive to 3.0 V (High corner VDDQ + 300 mV).  
2. For any pin under test input of 0 V VIN VDDQ + 0.3 V. Values are shown per DDR-SDRAM component  
Data Sheet  
14  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
3.2  
Current Specification and Conditions  
Table 9  
IDD Conditions  
Parameter  
Symbol  
Operating Current 0  
IDD0  
one bank; active/ precharge; DQ, DM, and DQS inputs changing once per clock cycle;  
address and control inputs changing once every two clock cycles.  
Operating Current 1  
IDD1  
one bank; active/read/precharge; Burst Length = 4; see component data sheet.  
Precharge Power-Down Standby Current  
all banks idle; power-down mode; CKE VIL,MAX  
IDD2P  
IDD2F  
Precharge Floating Standby Current  
CS VIH,,MIN, all banks idle; CKE VIH,MIN  
;
address and other control inputs changing once per clock cycle; VIN = VREF for DQ, DQS and DM.  
Precharge Quiet Standby Current  
IDD2Q  
CS VIHMIN, all banks idle; CKE VIH,MIN; VIN = VREF for DQ, DQS and DM;  
address and other control inputs stable at VIH,MIN or VIL,MAX  
.
Active Power-Down Standby Current  
one bank active; power-down mode; CKE VILMAX; VIN = VREF for DQ, DQS and DM.  
IDD3P  
IDD3N  
Active Standby Current  
one bank active; CS VIH,MIN; CKE VIH,MIN; tRC = tRAS,MAX  
DQ, DM and DQS inputs changing twice per clock cycle;  
address and control inputs changing once per clock cycle.  
;
Operating Current Read  
IDD4R  
one bank active; Burst Length = 2; reads; continuous burst;  
address and control inputs changing once per clock cycle;  
50% of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B; IOUT = 0 mA  
Operating Current Write  
IDD4W  
one bank active; Burst Length = 2; writes; continuous burst;  
address and control inputs changing once per clock cycle;  
50% of data outputs changing on every clock edge;  
CL = 2 for DDR266(A), CL = 3 for DDR333 and DDR400B  
Auto-Refresh Current  
IDD5  
IDD6  
IDD7  
t
RC = tRFCMIN, burst refresh  
Self-Refresh Current  
CKE 0.2 V; external clock on  
Operating Current 7  
four bank interleaving with Burst Length = 4; see component data sheet.  
Data Sheet  
15  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
Table 10  
IDD Specifications –7F/–7  
Unit Note/ Test  
Conditions5)  
256 MB 512 MB 1 GByte 1 GByte 256 MB 512 MB 1 GByte 1 GByte  
×72 ×72 ×72 ×72 ×72 ×72 ×72 ×72  
1 Rank 1 Rank 2 Ranks 2 Ranks 1 Rank 1 Rank 2 Ranks 2 Ranks  
7F  
max.  
990  
1080  
72  
7F  
7F  
7F  
7  
7  
7  
7  
max.  
1980  
2160  
144  
max.  
2970  
3150  
288  
max.  
2970  
3150  
288  
max.  
900  
990  
72  
max.  
1800  
1980  
144  
max.  
2790  
2970  
288  
max.  
2790  
2970  
288  
1)4)  
IDD0  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
1)3)4)  
2)4)  
IDD1  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
2)4)  
360  
225  
162  
495  
1035  
1125  
1620  
23  
720  
1440  
900  
1440  
900  
360  
225  
162  
495  
1035  
1125  
1620  
23  
720  
1440  
900  
1440  
900  
2)4)  
450  
450  
2)4)  
324  
648  
648  
324  
648  
648  
2)4)  
990  
1980  
3060  
3240  
4230  
90  
1980  
3060  
3240  
4230  
90  
990  
1980  
3060  
3240  
4230  
90  
1980  
3060  
3240  
4230  
90  
1)3)4)  
1)4)  
2070  
2250  
3240  
45  
2070  
2250  
3240  
45  
1)4)  
2)4)  
IDD6  
1)3)4)5)  
IDD7  
2025  
4050  
5040  
5040  
2025  
4050  
5040  
5040  
1) The module IDD values are calculated from the component IDD datasheet values are:  
n * IDD×[component] for single bank modules (n: number of components per module bank)  
n * IDD×[component] + n * IDD3N[component] for two bank modules (n: number of components per module bank)  
2) The module IDD values are calculated from the component IDD datasheet values are:  
n * IDD×[component] for single bank modules (n: number of components per module bank)  
2 * n * IDD×[component] for single two bank modules (n: number of components per module bank)  
3) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load  
conditions  
4) DRAM component currents only: module IDD will be measured differently depending upon register and PLL operation  
currents  
5) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C  
Data Sheet  
16  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
Table 11  
IDD Specifications –8  
Unit Note/ Test  
Conditions5)  
256 MB  
512 MB  
×72  
1 GByte  
×72  
×72  
1 Rank  
8  
1 Rank  
8  
2 Ranks  
8  
max.  
810  
900  
63  
max.  
1620  
1800  
126  
max.  
1)4)  
IDD0  
2430  
2610  
252  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
1)3)4)  
2)4)  
IDD1  
IDD2P  
IDD2F  
IDD2Q  
IDD3P  
IDD3N  
IDD4R  
IDD4W  
IDD5  
2)4)  
315  
198  
144  
405  
855  
945  
1530  
22,5  
1890  
630  
1260  
792  
2)4)  
396  
2)4)  
288  
576  
2)4)  
810  
1620  
2520  
2700  
3870  
90  
1)3)4)  
1)4)  
1710  
1890  
3060  
45  
1)4)  
2)4)  
IDD6  
1)3)4)5)  
IDD7  
3780  
4590  
1) The module IDD values are calculated from the component IDD datasheet values are:  
n * IDD×[component] for single bank modules (n: number of components per module bank)  
n * IDD×[component] + n * IDD3N[component] for two bank modules (n: number of components per module bank)  
2) The module IDD values are calculated from the component IDD datasheet values are:  
n * IDD×[component] for single bank modules (n: number of components per module bank)  
2 * n * IDD×[component] for single two bank modules (n: number of components per module bank)  
3) DQ I/O (IDDQ) currents are not included into calculations: module IDD values will be measured differently depending on load  
conditions  
4) DRAM component currents only: module IDD will be measured differently depending upon register and PLL operation  
currents  
5) Test condition for maximum values: VDD = 2.7 V, TA = 10 °C  
Data Sheet  
17  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
3.3  
AC Characteristics  
Table 12  
AC Timing - Absolute Specifications –8/–7/-7F  
Parameter  
Symbol  
–8  
–7  
–7F  
Unit Note/  
Test  
DDR200  
DDR266A  
Min. Max.  
–0.75 +0.75  
DDR266F  
Min. Max.  
Condition 1)  
Min. Max.  
–0.8 +0.8  
2)3)4)5)  
2)3)4)5)  
DQ output access time from  
CK/CK  
tAC  
0.75  
+0.75  
ns  
ns  
DQS output access time from  
CK/CK  
tDQSCK  
–0.8 +0.8  
–0.75 +0.75  
0.75  
+0.75  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
CK high-level width  
CK low-level width  
Clock Half Period  
Clock cycle time  
tCH  
0.45 0.55  
0.45 0.55  
0.45 0.55  
0.45 0.55  
0.45 0.55  
0.45 0.55  
tCK  
tCK  
tCL  
tHP  
min. (tCL, tCH) min. (tCL, tCH) min. (tCL, tCH) ns  
tCK2.5  
tCK2  
tDH  
8
12  
12  
7
12  
12  
7
12  
ns  
ns  
ns  
ns  
ns  
CL = 2.5 2)3)4)5)  
CL = 2.0 2)3)4)5)  
10  
0.6  
0.6  
2.5  
7.5  
0.5  
0.5  
2.2  
7.5 12  
2)3)4)5)  
DQ and DM input hold time  
DQ and DM input setup time  
0.5  
0.5  
2.2  
2)3)4)5)  
tDS  
2)3)4)5)6)  
Control and Addr. input pulse  
width (each input)  
tIPW  
2)3)4)5)6)  
2)3)4)5)7)  
2)3)4)5)7)  
2)3)4)5)  
DQ and DM input pulse width  
(each input)  
tDIPW  
2.0  
1.75  
1.75 —  
ns  
ns  
ns  
tCK  
Data-out high-impedance time tHZ  
from CK/CK  
–0.8 +0.8  
–0.8 +0.8  
0.75 1.25  
–0.75 +0.75  
–0.75 +0.75  
0.75 1.25  
+0.75  
0.75  
Data-out low-impedance time  
from CK/CK  
Write command to 1st DQS  
tLZ  
+0.75  
0.75  
tDQSS  
tDQSQ  
tQHS  
tQH  
0.75 1.25  
latching transition  
2)3)4)5)  
DQS-DQ skew (DQS and  
associated DQ signals)  
+0.6  
1.0  
tHP  
+0.5  
0.75  
+0.5  
0.75  
ns  
ns  
ns  
ns  
ns  
2)3)4)5)  
Data hold skew factor  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
DQ/DQS output hold time  
tHP – —  
tHP – —  
tQHS  
tQHS  
tQHS  
DQS input low (high) pulse  
width (write cycle)  
tDQSL,H 0.35 —  
0.35  
0.35 —  
tCK  
tCK  
tCK  
tCK  
DQS falling edge to CK setup  
time (write cycle)  
tDSS  
0.2  
0.2  
2
0.2  
0.2  
2
0.2  
0.2  
2
DQS falling edge hold time from tDSH  
CK (write cycle)  
Mode register set command  
cycle time  
tMRD  
2)3)4)5)8)  
2)3)4)5)9)  
2)3)4)5)  
Write preamble setup time  
Write postamble  
tWPRES  
tWPST  
tWPRE  
0
0
0
ns  
0.40 0.60  
0.25 —  
0.40 0.60  
0.25  
0.40 0.60  
0.25 —  
tCK  
tCK  
Write preamble  
Data Sheet  
18  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
Table 12  
AC Timing - Absolute Specifications –8/–7/-7F  
Parameter  
Symbol  
–8  
–7  
–7F  
Unit Note/  
Test  
DDR200  
Min. Max.  
DDR266A  
Min. Max.  
DDR266F  
Min. Max.  
Condition 1)  
Address and control input setup tIS  
time  
1.1  
1.1  
1.1  
1.1  
0.9  
1.0  
0.9  
1.0  
1.1  
0.9  
1.0  
0.9  
1.0  
ns  
ns  
ns  
ns  
fast slew rate  
3)4)5)6)10)  
slow slew rate  
3)4)5)6)10)  
Address and control input hold tIH  
time  
fast slew rate  
3)4)5)6)10)  
slow slew rate  
3)4)5)6)10)  
Read preamble  
tRPRE  
tRPRES  
tRPST  
0.9 1.1  
1.5  
0.40 0.60  
0.9  
NA  
0.9 1.1  
NA  
0.40 0.60  
120E+3 45  
tCK  
tCK  
ns  
CL > 1.5 2)3)4)5)  
2)3)4)5)11)  
Read preamble setup time  
Read postamble  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
0.40 0.60  
120E+3 45  
Active to Precharge command tRAS  
50  
70  
120E+3 tCK  
Active to Active/Auto-refresh  
command period  
tRC  
65  
65  
ns  
2)3)4)5)  
Auto-refresh to Active/Auto-  
refresh command period  
tRFC  
80  
75  
75  
ns  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
2)3)4)5)  
Active to Read or Write delay  
Precharge command period  
tRCD  
tRP  
20  
20  
20  
15  
20  
20  
20  
15  
20  
20  
20  
15  
ns  
ns  
ns  
ns  
Active to Autoprecharge delay tRAP  
Active bank A to Active bank B tRRD  
command  
2)3)4)5)  
Write recovery time  
tWR  
15  
15  
15  
ns  
2)3)4)5)12)  
Auto precharge write recovery + tDAL  
(twr/tCK) + (trp/tCK)  
tCK  
precharge time  
Internal write to read command tWTR  
delay  
1
1
7.8  
1
7.8  
tCK  
ns  
CL > 1.5 2)3)4)5)  
2)3)4)5)  
Exit self-refresh to non-read  
command  
tXSNR  
tXSRD  
tREFI  
80  
200  
75  
200  
75  
200  
2)3)4)5)  
Exit self-refresh to read  
command  
tCK  
µs  
2)3)4)5)13)  
Average Periodic Refresh  
Interval  
7.8  
1) 0 °C TA 70 °C; VDDQ = 2.5 V ± 0.2 V, VDD = +2.5 V ± 0.2 V  
2) Input slew rate 1 V/ns for DDR266a, DDR266F and = 1 V/ns for DDR200  
3) The CK/CK input reference level (for timing reference to CK/CK) is the point at which CK and CK cross: the input reference  
level for signals other than CK/CK, is VREF. CK/CK slew rate are 1.0 V/ns.  
4) Inputs are not recognized as valid until VREF stabilizes.  
5) The Output timing reference level, as measured at the timing reference point indicated in AC Characteristics (note 3) is VTT.  
6) These parameters guarantee device timing, but they are not necessarily tested on each device.  
7) tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referred  
to a specific voltage level, but specify when the device is no longer driving (HZ), or begins driving (LZ).  
Data Sheet  
19  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Electrical Characteristics  
8) The specific requirement is that DQS be valid (HIGH, LOW, or some point on a valid transition) on or before this CK edge.  
A valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes  
were previously in progress on the bus, DQS will be transitioning from Hi-Z to logic LOW. If a previous write was in  
progress, DQS could be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS  
.
9) The maximum limit for this parameter is not a device limit. The device operates with a greater value for this parameter, but  
system performance (bus turnaround) degrades accordingly.  
10) Fast slew rate 1.0 V/ns , slow slew rate 0.5 V/ns and < 1 V/ns for command/address and CK & CK slew rate > 1.0 V/ns,  
measured between VOH(ac) and VOL(ac)  
.
11) tRPRES is defined for CL = 1.5 operation only  
12) For each of the terms, if not already an integer, round to the next highest integer. tCK is equal to the actual system clock  
cycle time.  
13) A maximum of eight Autorefresh commands can be posted to any given DDR SDRAM device.  
Data Sheet  
20  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
4
SPD Contents  
Table 13  
SPD Codes for HYS72D32500GR–[7F/7/8]-B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC1600R – PC2100R –  
PC2100R –  
20220  
20220  
Rev. 0.0  
HEX  
80  
20330  
Rev. 0.0  
HEX  
80  
Jedec SPD Revision  
Rev. 0.0  
HEX  
80  
Byte#  
0
Description  
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
1
08  
08  
08  
2
07  
07  
07  
3
0D  
0A  
01  
0D  
0A  
01  
0D  
0A  
01  
4
5
6
48  
48  
48  
7
Data Width (MSB)  
00  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support  
Refresh Rate  
04  
04  
04  
9
80  
70  
70  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
80  
75  
75  
02  
02  
02  
82  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
08  
08  
08  
08  
08  
08  
01  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0E  
04  
0C  
01  
0C  
01  
0C  
01  
CS Latency  
Write Latency  
02  
02  
02  
DIMM Attributes  
26  
26  
26  
Component Attributes  
C0  
A0  
80  
C0  
75  
C0  
75  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
75  
75  
00  
00  
00  
Data Sheet  
21  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 13  
SPD Codes for HYS72D32500GR–[7F/7/8]-B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC1600R – PC2100R –  
PC2100R –  
20220  
20220  
Rev. 0.0  
HEX  
00  
20330  
Rev. 0.0  
HEX  
00  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
00  
Byte#  
26  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
27  
50  
50  
3C  
3C  
3C  
2D  
40  
28  
tRRDmin [ns]  
3C  
50  
3C  
50  
29  
tRCDmin [ns]  
30  
tRASmin [ns]  
32  
2D  
40  
31  
Module Density per Rank  
tAS, tCS [ns]  
40  
32  
B0  
B0  
60  
90  
90  
33  
tAH, TCH [ns]  
90  
90  
34  
tDS [ns]  
50  
50  
35  
tDH [ns]  
60  
50  
50  
36-40  
41  
not used  
00  
00  
00  
tRCmin [ns]  
46  
41  
3C  
4B  
30  
42  
tRFCmin [ns]  
50  
4B  
30  
43  
tCKmax [ns]  
30  
44  
tDQSQmax [ns]  
3C  
A0  
00  
32  
32  
45  
tQHSmax [ns]  
75  
75  
46  
not used  
00  
00  
47  
DIMM PCB Height  
not used  
00  
00  
00  
48-61  
62  
00  
00  
00  
SPD Revision  
00  
00  
00  
63  
Checksum of Byte 0-62  
JEDEC ID Code of Infineon (1)  
JEDEC ID Code of Infineon (2)  
JEDEC ID Code of Infineon (3)  
JEDEC ID Code of Infineon (4)  
JEDEC ID Code of Infineon (5)  
JEDEC ID Code of Infineon (6)  
BF  
C1  
49  
CA  
C1  
49  
9D  
C1  
49  
64  
65  
66  
4E  
46  
4E  
46  
4E  
46  
67  
68  
49  
49  
49  
69  
4E  
4E  
4E  
Data Sheet  
22  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 13  
SPD Codes for HYS72D32500GR–[7F/7/8]-B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC1600R – PC2100R –  
PC2100R –  
20220  
20220  
Rev. 0.0  
HEX  
45  
20330  
Rev. 0.0  
HEX  
45  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
45  
4F  
xx  
Byte#  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
JEDEC ID Code of Infineon (7)  
JEDEC ID Code of Infineon (8)  
Module Manufacturer Location  
Part Number, Char 1  
4F  
xx  
4F  
xx  
37  
37  
37  
32  
44  
33  
32  
35  
30  
30  
47  
52  
37  
46  
42  
20  
20  
20  
20  
20  
xx  
Part Number, Char 2  
32  
32  
Part Number, Char 3  
44  
44  
Part Number, Char 4  
33  
33  
Part Number, Char 5  
32  
32  
Part Number, Char 6  
35  
35  
Part Number, Char 7  
30  
30  
Part Number, Char 8  
30  
30  
Part Number, Char 9  
47  
47  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
Module Serial Number (1)  
Module Serial Number (2)  
52  
52  
38  
37  
42  
42  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
Data Sheet  
23  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 13  
SPD Codes for HYS72D32500GR–[7F/7/8]-B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC1600R – PC2100R –  
PC2100R –  
20220  
20220  
Rev. 0.0  
HEX  
xx  
20330  
Rev. 0.0  
HEX  
xx  
Jedec SPD Revision  
Description  
Rev. 0.0  
HEX  
xx  
Byte#  
97  
Module Serial Number (3)  
Module Serial Number (4)  
not used  
98  
xx  
xx  
xx  
99-127  
00  
00  
00  
Table 14  
SPD Codes for HYS72D64500GR–[7F/7/8]–B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC2100R – PC2100R – PC1600R–  
20220  
Rev. 0.0  
HEX  
80  
20330  
Rev. 0.0  
HEX  
80  
20220  
Rev. 0.0  
HEX  
80  
Jedec SPD Revision  
Byte#  
Description  
0
1
2
3
4
5
Programmed SPD Bytes in E2PROM  
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
08  
08  
08  
07  
07  
07  
0D  
0D  
0D  
0B  
0B  
0B  
01  
01  
01  
Data Sheet  
24  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 14  
SPD Codes for HYS72D64500GR–[7F/7/8]–B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC2100R – PC2100R – PC1600R–  
20220  
Rev. 0.0  
HEX  
48  
20330  
Rev. 0.0  
HEX  
48  
20220  
Rev. 0.0  
HEX  
48  
Jedec SPD Revision  
Description  
Byte#  
6
Data Width (LSB)  
7
Data Width (MSB)  
00  
00  
00  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
tAC SDRAM @ CLmax (Byte 18) [ns]  
Error Correction Support  
Refresh Rate  
04  
04  
04  
9
70  
70  
80  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
75  
75  
80  
02  
02  
02  
82  
82  
82  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
04  
04  
04  
04  
04  
04  
01  
01  
01  
Burst Length Supported  
Number of Banks on SDRAM Device  
CAS Latency  
0E  
04  
0E  
04  
0E  
04  
0C  
01  
0C  
01  
0C  
01  
CS Latency  
Write Latency  
02  
02  
02  
DIMM Attributes  
26  
26  
26  
Component Attributes  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
tAC SDRAM @ CLmax -1 [ns]  
tRPmin [ns]  
C0  
75  
C0  
75  
C0  
A0  
80  
75  
75  
00  
00  
00  
00  
00  
00  
3C  
3C  
3C  
2D  
80  
50  
50  
tRRDmin [ns]  
3C  
50  
3C  
50  
tRCDmin [ns]  
tRASmin [ns]  
2D  
80  
32  
Module Density per Rank  
tAS, tCS [ns]  
80  
90  
90  
B0  
Data Sheet  
25  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 14  
SPD Codes for HYS72D64500GR–[7F/7/8]–B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC2100R – PC2100R – PC1600R–  
20220  
Rev. 0.0  
HEX  
90  
20330  
Rev. 0.0  
HEX  
90  
20220  
Rev. 0.0  
HEX  
B0  
60  
Jedec SPD Revision  
Description  
Byte#  
33  
tAH, TCH [ns]  
34  
tDS [ns]  
50  
50  
35  
tDH [ns]  
50  
50  
60  
36-40  
41  
not used  
00  
00  
00  
tRCmin [ns]  
3C  
4B  
30  
41  
46  
42  
tRFCmin [ns]  
4B  
30  
50  
43  
tCKmax [ns]  
30  
44  
tDQSQmax [ns]  
32  
32  
3C  
A0  
00  
45  
tQHSmax [ns]  
75  
75  
46  
not used  
00  
00  
47  
DIMM PCB Height  
not used  
00  
00  
00  
48-61  
62  
00  
00  
00  
SPD Revision  
00  
00  
00  
63  
Checksum of Byte 0-62  
JEDEC ID Code of Infineon (1)  
JEDEC ID Code of Infineon (2)  
JEDEC ID Code of Infineon (3)  
JEDEC ID Code of Infineon (4)  
JEDEC ID Code of Infineon (5)  
JEDEC ID Code of Infineon (6)  
JEDEC ID Code of Infineon (7)  
JEDEC ID Code of Infineon (8)  
Module Manufacturer Location  
Part Number, Char 1  
Part Number, Char 2  
Part Number, Char 3  
Part Number, Char 4  
D6  
C1  
49  
03  
F8  
64  
C1  
49  
C1  
49  
65  
66  
4E  
46  
4E  
46  
4E  
46  
67  
68  
49  
49  
49  
69  
4E  
45  
4E  
45  
4E  
45  
70  
71  
4F  
4F  
4F  
72  
xx  
xx  
xx  
73  
37  
37  
37  
74  
32  
32  
32  
75  
44  
44  
44  
76  
36  
36  
36  
Data Sheet  
26  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 14  
SPD Codes for HYS72D64500GR–[7F/7/8]–B  
×72  
×72  
×72  
1 rank  
reg  
1 rank  
reg  
1 rank  
reg  
Label Code  
PC2100R – PC2100R – PC1600R–  
20220  
Rev. 0.0  
HEX  
34  
20330  
Rev. 0.0  
HEX  
34  
20220  
Rev. 0.0  
HEX  
34  
Jedec SPD Revision  
Description  
Byte#  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
94  
95  
96  
97  
98  
Part Number, Char 5  
Part Number, Char 6  
35  
35  
35  
Part Number, Char 7  
30  
30  
30  
Part Number, Char 8  
30  
30  
30  
Part Number, Char 9  
47  
47  
47  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
Module Manufacturing Date Week  
Module Serial Number (1)  
Module Serial Number (2)  
Module Serial Number (3)  
Module Serial Number (4)  
52  
52  
52  
37  
37  
38  
46  
42  
42  
42  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
20  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
99-127 not used  
00  
00  
00  
Data Sheet  
27  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 15  
SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8  
×72  
×72  
×72  
×72  
×72  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R- PC2100R- PC1600R- PC2100R- PC2100R-  
20330-N  
20220-N  
20220-N  
20330-N  
20220-N  
Jedec SPD Revision  
Byte# Description  
HEX  
HEX  
80  
08  
07  
0D  
0B  
02  
48  
00  
04  
70  
75  
02  
82  
04  
04  
01  
0E  
04  
0C  
01  
02  
26  
C0  
75  
75  
00  
00  
HEX  
80  
08  
07  
0D  
0B  
02  
48  
00  
04  
80  
80  
02  
82  
04  
04  
01  
0E  
04  
0C  
01  
02  
26  
C0  
A0  
80  
00  
00  
HEX  
80  
08  
07  
0D  
0B  
02  
48  
00  
04  
70  
75  
02  
82  
04  
04  
01  
0E  
04  
0C  
01  
02  
26  
C0  
75  
75  
00  
00  
HEX  
80  
08  
07  
0D  
0B  
02  
48  
00  
04  
70  
75  
02  
82  
04  
04  
01  
0E  
04  
0C  
01  
02  
26  
C0  
75  
75  
00  
00  
0
Programmed SPD Bytes in E2PROM 80  
1
Total number of Bytes in E2PROM  
Memory Type (DDR = 07h)  
Number of Row Addresses  
Number of Column Addresses  
Number of DIMM Ranks  
Data Width (LSB)  
08  
07  
0D  
0B  
02  
48  
00  
04  
70  
2
3
4
5
6
7
Data Width (MSB)  
8
Interface Voltage Levels  
tCK @ CLmax (Byte 18) [ns]  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
tAC SDRAM @ CLmax (Byte 18) [ns] 75  
Error Correction Support  
Refresh Rate  
02  
82  
04  
04  
01  
0E  
Primary SDRAM Width  
Error Checking SDRAM Width  
tCCD [cycles]  
Burst Length Supported  
Number of Banks on SDRAM Device 04  
CAS Latency  
0C  
01  
02  
26  
C0  
75  
75  
00  
00  
CS Latency  
Write Latency  
DIMM Attributes  
Component Attributes  
tCK @ CLmax -0.5 (Byte 18) [ns]  
tAC SDRAM @ CLmax -0.5 [ns]  
tCK @ CLmax -1 (Byte 18) [ns]  
tAC SDRAM @ CLmax -1 [ns]  
Data Sheet  
28  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 15  
SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8  
×72  
×72  
×72  
×72  
×72  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R- PC2100R- PC1600R- PC2100R- PC2100R-  
20330-N  
20220-N  
20220-N  
20330-N  
20220-N  
Jedec SPD Revision  
Byte# Description  
HEX  
50  
3C  
50  
2D  
80  
90  
90  
50  
50  
00  
00  
00  
00  
00  
41  
4B  
30  
32  
75  
00  
00  
00  
00  
04  
C1  
49  
4E  
HEX  
3C  
3C  
3C  
2D  
80  
90  
90  
50  
50  
00  
00  
00  
00  
00  
3C  
4B  
30  
32  
75  
00  
00  
00  
00  
D7  
C1  
49  
4E  
HEX  
50  
3C  
50  
32  
80  
B0  
B0  
60  
60  
00  
00  
00  
00  
00  
46  
50  
30  
3C  
A0  
00  
00  
00  
00  
F9  
C1  
49  
4E  
HEX  
50  
3C  
50  
2D  
80  
90  
90  
50  
50  
00  
00  
00  
00  
00  
41  
4B  
30  
32  
75  
00  
00  
00  
00  
04  
C1  
49  
4E  
HEX  
3C  
3C  
3C  
2D  
80  
90  
90  
50  
50  
00  
00  
00  
00  
00  
3C  
4B  
30  
32  
75  
00  
00  
00  
00  
D7  
C1  
49  
4E  
27  
28  
29  
30  
31  
32  
33  
34  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
tRPmin [ns]  
tRRDmin [ns]  
tRCDmin [ns]  
tRASmin [ns]  
Module Density per Rank  
tAS, tCS [ns]  
tAH, TCH [ns]  
tDS [ns]  
tDH [ns]  
not used  
not used  
not used  
not used  
not used  
tRCmin [ns]  
tRFCmin [ns]  
tCKmax [ns]  
tDQSQmax [ns]  
tQHSmax [ns]  
not used  
DIMM PCB Height  
48-61 not used  
62  
63  
64  
65  
66  
SPD Revision  
Checksum of Byte 0-62  
JEDEC ID Code of Infineon (1)  
JEDEC ID Code of Infineon (2)  
JEDEC ID Code of Infineon (3)  
Data Sheet  
29  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 15  
SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8  
×72  
×72  
×72  
×72  
×72  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R- PC2100R- PC1600R- PC2100R- PC2100R-  
20330-N  
20220-N  
20220-N  
20330-N  
20220-N  
Jedec SPD Revision  
Byte# Description  
HEX  
46  
49  
4E  
45  
4F  
xx  
HEX  
46  
49  
4E  
45  
4F  
xx  
HEX  
46  
49  
4E  
45  
4F  
xx  
HEX  
46  
49  
4E  
45  
4F  
xx  
HEX  
46  
49  
4E  
45  
4F  
xx  
67  
68  
69  
70  
71  
72  
73  
74  
75  
76  
77  
78  
79  
80  
81  
82  
83  
84  
85  
86  
87  
88  
89  
90  
91  
92  
93  
JEDEC ID Code of Infineon (4)  
JEDEC ID Code of Infineon (5)  
JEDEC ID Code of Infineon (6)  
JEDEC ID Code of Infineon (7)  
JEDEC ID Code of Infineon (8)  
Module Manufacturer Location  
Part Number, Char 1  
37  
32  
44  
31  
32  
38  
35  
32  
30  
47  
52  
37  
42  
20  
20  
20  
20  
20  
xx  
37  
32  
44  
31  
32  
38  
35  
32  
31  
47  
52  
37  
46  
42  
20  
20  
20  
20  
xx  
37  
32  
44  
31  
32  
38  
35  
32  
31  
47  
52  
38  
42  
20  
20  
20  
20  
20  
xx  
37  
32  
44  
31  
32  
38  
35  
32  
31  
47  
52  
37  
42  
20  
20  
20  
20  
20  
xx  
37  
32  
44  
31  
32  
38  
35  
32  
31  
47  
52  
37  
46  
42  
20  
20  
20  
20  
xx  
Part Number, Char 2  
Part Number, Char 3  
Part Number, Char 4  
Part Number, Char 5  
Part Number, Char 6  
Part Number, Char 7  
Part Number, Char 8  
Part Number, Char 9  
Part Number, Char 10  
Part Number, Char 11  
Part Number, Char 12  
Part Number, Char 13  
Part Number, Char 14  
Part Number, Char 15  
Part Number, Char 16  
Part Number, Char 17  
Part Number, Char 18  
Module Revision Code  
Test Program Revision Code  
Module Manufacturing Date Year  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
Data Sheet  
30  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
SPD Contents  
Table 15  
SPD Codes for HYS72D1285[20/21]GR[–7F/7]–B, HYS72D128521GR–8  
×72  
×72  
×72  
×72  
×72  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
2 Ranks  
reg  
Label Code  
PC2100R- PC2100R- PC1600R- PC2100R- PC2100R-  
20330-N  
20220-N  
20220-N  
20330-N  
20220-N  
Jedec SPD Revision  
Byte# Description  
HEX  
xx  
HEX  
xx  
HEX  
xx  
HEX  
xx  
HEX  
xx  
94  
95  
96  
97  
98  
Module Manufacturing Date Week  
Module Serial Number (1)  
Module Serial Number (2)  
Module Serial Number (3)  
Module Serial Number (4)  
not used  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
xx  
99-  
00  
00  
00  
00  
00  
127  
Data Sheet  
31  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Package Outlines  
5
Package Outlines  
133.35  
128.95  
0.15  
A B C  
4 MAX.  
1)  
A
1
2.5  
92  
B
C
6.62  
2.175  
±0.1  
ø0.1  
A B C  
0.4  
6.35  
±0.1  
1.27  
64.77  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
1) On ECC modules only  
Burr max. 0.4 allowed  
Figure 4  
Package Outlines Raw Card L (L-DIM-184-13)  
Data Sheet  
32  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Package Outlines  
133.35  
128.95  
0.15  
A B C  
4 MAX.  
1)  
A
1
2.5  
92  
B
C
6.62  
2.175  
±0.1  
ø0.1  
A B C  
0.4  
6.35  
±0.1  
1.27  
64.77  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
1)  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
1) On ECC modules only  
Burr max. 0.4 allowed  
Figure 5  
Package Outlines Raw Card M (L-DIM-184-12)  
Data Sheet  
33  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Package Outlines  
133.35  
128.95  
0.15  
A B C  
6.81 MAX.  
1)  
A
1
2.5  
92  
B
C
6.62  
2.175  
±0.1  
ø0.1  
A B C  
0.4  
6.35  
±0.1  
1.27  
64.77  
49.53  
95 x 1.27 = 120.65  
±0.1  
1.8  
0.1  
A B C  
93  
184  
1)  
3 MIN.  
Detail of contacts  
1.27  
±0.05  
1
0.1  
A B C  
1) On ECC modules only  
Burr max. 0.4 allowed  
Figure 6  
Package Outlines Raw Card N (L-DIM-184-14)  
Data Sheet  
34  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Application Note  
6
Application Note  
Power Up and Power Management on DDR Registered DIMMs (according to JEDEC ballot JC-42.5 Item  
1173)  
184-pin Double Data Rate (DDR) Registered DIMMs include two new features to facilitate controlled power-up and  
to minimize power consumption during low power mode. One feature is externally controlled via a system-  
generated RESET signal; the second is based on module detection of the input clocks. These enhancements  
permit the modules to power up with SDRAM outputs in a High-Z state (eliminating risk of high current dissipations  
and/or dotted I/Os), and result in the powering-down of module support devices (registers and Phase-Locked  
Loop) when the memory is in Self-Refresh mode.  
The new RESET pin controls power dissipation on the module’s registers and ensures that CKE and other SDRAM  
inputs are maintained at a valid ‘low’ level during power-up and self refresh. When RESET is at a low level, all the  
register outputs are forced to a low level, and all differential register input receivers are powered down, resulting  
in very low register power consumption. The RESET pin, located on DIMM tab #10, is driven from the system as  
an asynchronous signal according to the attached details. Using this function also permits the system and DIMM  
clocks to be stopped during memory Self Refresh operation, while ensuring that the SDRAMs stay in Self Refresh  
mode.  
Table 16  
RESET Truth Table  
Register Inputs  
Register  
Outputs  
RESET  
CK  
CK  
Data in (D)  
Data out (Q)  
H
H
H
H
Rising  
Rising  
L or H  
High Z  
Falling  
Falling  
L or H  
High Z  
H
L
H
L
X
X
Qo  
Illegal input  
conditions  
L
X or Hi-Z  
X or Hi-Z  
X or Hi-Z  
L
X: Don’t care, Hi-Z: High Impedance, Qo: Data latched at the previous of CK rising and CK falling  
As described in the table above, a low on the RESET input ensures that the Clock Enable (CKE) signal(s) are  
maintained low at the SDRAM pins (CKE being one of the 'Q' signals at the register output). Holding CKE low  
maintains a high impedance state on the SDRAM DQ, DQS and DM outputs — where they will remain until  
activated by a valid ‘read’ cycle. CKE low also maintains SDRAMs in Self Refresh mode when applicable.  
The DDR PLL devices automatically detect clock activity above 20MHz. When an input clock frequency of 20MHz  
or greater is detected, the PLL begins operation and initiates clock frequency lock (the minimum operating  
frequency at which all specifications will be met is 95MHz). If the clock input frequency drops below 20MHz (actual  
detect frequency will vary by vendor), the PLL VCO (Voltage Controlled Oscillator) is stopped, outputs are made  
High-Z, and the differential inputs are powered down — resulting in a total PLL current consumption of less than  
1mA. Use of this low power PLL function makes the use of the PLL RESET (or G pin) unnecessary, and it is tied  
inactive on the DIMM.  
This application note describes the required and optional system sequences associated with the DDR Registered  
DIMM 'RESET' function. It is important to note that all references to CKE refer to both CKE0 and CKE1 for a 2-  
bank DIMM. Because RESET applies to all DIMM register devices, it is therefore not possible to uniquely control  
CKE to one physical DIMM bank through the use of the RESET pin.  
Data Sheet  
35  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Application Note  
Power-Up Sequence with RESET — Required  
1. The system sets RESET at a valid low level.  
This is the preferred default state during power-up. This input condition forces all register outputs to a low state  
independent of the condition on the register inputs (data and clock), ensuring that CKE is at a stable low-level  
at the DDR SDRAMs.  
2. The power supplies should be initialized according to the JEDEC-approved initialization sequence for DDR  
SDRAMs.  
3. Stabilization of Clocks to the SDRAM  
The system must drive clocks to the application frequency (PLL operation is not assured until the input clock  
reaches 20 MHz). Stability of clocks at the SDRAMs will be affected by all applicable system clock devices,  
and time must be allotted to permit all clock devices to settle. Once a stable clock is received at the DIMM PLL,  
the required PLL stabilization time (assuming power to the DIMM is stable) is 100 microseconds. When a  
stable clock is present at the SDRAM input (driven from the PLL), the DDR SDRAM requires 200 µsec prior to  
SDRAM operation.  
4. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector).  
CKE must be maintained low and all other inputs should be driven to a known state. In general these  
commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’ command  
(with CKE low), as this is the first command defined by the JEDEC initialization sequence (ideally this would  
be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs to be  
consistent with the state of the register outputs.  
5. The system switches RESET to a logic ‘high’ level.  
The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,  
setting the RESET timing in relation to a specific clock edge is not required (during this period, register inputs  
must remain stable).  
6. The system must maintain stable register inputs until normal register operation is attained.  
The registers have an activation time that allows their clock receivers, data input receivers, and output drivers  
sufficient time to be turned on and become stable. During this time the system must maintain the valid logic  
levels described in step 5. It is also a functional requirement that the registers maintain a low state at the CKE  
outputs to guarantee that the DDR SDRAMs continue to receive a low level on CKE. Register activation time  
(t (ACT) ), from asynchronous switching of RESET from low to high until the registers are stable and ready to  
accept an input signal, is specified in the register and DIMM do-umentation.  
7. The system can begin the JEDEC-defined DDR SDRAM power-up sequence (according to the JEDEC-  
pproved initialization sequence).  
Self Refresh Entry (RESET low, clocks powered off) — Optional  
Self Refresh can be used to retain data in DDR SDRAM DIMMs even if the rest of the system is powered down  
and the clocks are off. This mode allows the DDR SDRAMs on the DIMM to retain data without external clocking.  
Self Refresh mode is an ideal time to utilize the RESET pin, as this can reduce register power consumption  
(RESET low deactivates register CK and CK, data input receivers, and data output drivers).  
1. 1. The system applies Self Refresh entry command.  
(CKELow, CSLow, RAS Low, CASLow, WEHigh)  
Note: Note: The commands reach the DDR SDRAM one clock later due to the additional register pipelining on a  
Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input  
conditions to the SDRAM are Don’t Cares— with the exception of CKE.  
2. The system sets RESET at a valid low level.  
This input condition forces all register outputs to a low state, independent of the condition on the registerm  
inputs (data and clock), and ensures that CKE, and all other control and address signals, are a stable low-level  
at the DDR SDRAMs. Since the RESET signal is asynchronous, setting the RESET timing in relation to a  
specific clock edge is not required.  
3. The system turns off clock inputs to the DIMM. (Optional)  
a. In order to reduce DIMM PLL current, the clock inputs to the DIMM are turned off, resulting in High-Z clock  
Data Sheet  
36  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Application Note  
inputs to both the SDRAMs and the registers. This must be done after the RESET deactivate time of the  
register (t (INACT). The deactivate time defines the time in which the clocks and the control and address  
signals must maintain valid levels after RESET low has been applied and is specified in the register and DIMM  
documentation.  
b.The system may release DIMM address and control inputs to High-Z.  
This can be done after the RESET deactivate time of the register. The deactivate time defines the time in which  
the clocks and the control and the address signals must maintain valid levels after RESET low has been  
applied. It is highly recommended that CKE continue to remain low during this operation.  
4. The DIMM is in lowest power Self Refresh mode.  
Self Refresh Exit (RESET low, clocks powered off) — Optional  
1. Stabilization of Clocks to the SDRAM.  
The system must drive clocks to the application frequency (PLL operation is not assured until the input clock  
reaches ~20MHz). Stability of clocks at the SDRAMs will be affected by all applicable system clock devices,  
and time must be allotted to permit all clock devices to settle. Once a stable clock is received at the DIMM PLL,  
the required PLL stabilization time (assuming power to the DIMM is stable) is 100 microseconds.  
2. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector).  
CKE must be maintained low and all other inputs should be driven to a known state. In general these  
commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’ command  
(with CKE low), as this is the first command defined by the JEDEC Self Refresh Exit sequence (ideally this  
would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs, to  
be consistent with the state of the register outputs.  
3. The system switches RESET to a logic ‘high’ level.  
The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,  
RESET timing relationship to a specific clock edge is not required (during this period, register inputs must  
remain stable).  
4. The system must maintain stable register inputs until normal register operation is attained.  
The registers have an activation time that allows the clock receivers, input receivers, and output drivers  
sufficient time to be turned on and become stable. During this time the system must maintain the valid logic  
levels described in Step 2. It is also a functional requirement that the registers maintain a low state at the CKE  
outputs to guarantee that the DDR SDRAMs continue to receive a low level on CKE. Register activation time  
(t (ACT) ), from asynchronous switching of RESET from low to high until the registers are stable and ready to  
accept an input signal, is specified in the register and DIMM do-umentation.  
5. System can begin the JEDEC-defined DDR SDRAM Self Refresh Exit Procedure.  
Self Refresh Entry (RESET low, clocks running) — Optional  
Although keeping the clocks running increases power consumption from the on-DIMM PLL during self refresh, this  
is an alternate operating mode for these DIMMs.  
1. 1. System enters Self Refresh entry command.  
(CKELow, CSLow, RASLow, CASLow, WEHigh)  
Note: Note: The commands reach the DDR SDRAM one clock later due to the additional register pipelining on a  
Registered DIMM. After this command is issued to the SDRAM, all of the address and control and clock input  
conditions to the SDRAM are Don’t Cares — with the exception of CKE.  
2. The system sets RESET at a valid low level.  
This input condition forces all register outputs to a low state, independent of the condition on the data and clock  
register inputs, and ensures that CKE is a stable low-level at the DDR SDRAMs.  
3. The system may release DIMM address and control inputs to High-Z.  
This can be done after the RESET deactivate time of the register (t (INACT) ). The deactivate time describes  
the time in which the clocks and the control and the address signals must maintain valid levels after RESET  
low has been applied. It is highly recommended that CKE continue to remain low during the operation.  
4. The DIMM is in a low power, Self Refresh mode.  
Data Sheet  
37  
Rev. 1.03 2004-01  
HYS72D[128/64/32]5[00/20/21]GR–[7F/7/8]-B  
Registered DDR SDRAM-Modules  
Application Note  
Self Refresh Exit (RESET low, clocks running) — Optional  
1. The system applies valid logic levels to the data inputs of the register (address and controls at the DIMM  
connector). CKE must be maintained low and all other inputs should be driven to a known state. In general  
these commands can be determined by the system designer. One option is to apply an SDRAM ‘NOP’  
command (with CKE low), as this is the first command defined by the Self Refresh Exit sequence (ideally this  
would be a ‘NOP Deselect’ command). A second option is to apply low levels on all of the register inputs to be  
consistent with the state of the register outputs.  
2. The system switches RESET to a logic 'high' level.  
The SDRAM is now functional and prepared to receive commands. Since the RESET signal is asynchronous,  
it does not need to be tied to a particular clock edge (during this period, register inputs must continue to remain  
stable).  
3. The system must maintain stable register inputs until normal register operation is attained.  
The registers have an activation time that allows the clock receivers, input receivers, and output drivers  
sufficient time to be turned on and become stable. During this time the system must maintain the valid logic  
levels described in Step 1. It is also a functional requirement that the registers maintain a low state at the CKE  
outputs in order to guarantee that the DDR SDRAMs continue to receive a low level on CKE. This activation  
time, from asynchronous switching of RESET from low to high, until the registers are stable and ready to accept  
an input signal, is t (ACT ) as specified in the register and DIMM documentation.  
4. The system can begin JEDEC defined DDR SDRAM Self Refresh Exit Procedure.  
Self Refresh Entry/Exit (RESET high, clocks running) — Optional  
As this sequence does not involve the use of the RESET function, the JEDEC standard SDRAM specification  
explains in detail the method for entering and exiting Self Refresh for this case.  
Self Refresh Entry (RESET high, clocks powered off) — Not Permissible  
In order to maintain a valid low level on the register output, it is required that either the clocks be running and the  
system drive a low level on CKE, or the clocks are powered off and RESET is asserted low according to the  
sequence defined in this application note. In the case where RESET remains high and the clocks are powered off,  
the PLL drives a High-Z clock input into the register clock input. Without the low level on RESET an unknown DIMM  
state will result.  
Data Sheet  
38  
Rev. 1.03 2004-01  
w w w . i n f i n e o n . c o m  
Published by Infineon Technologies AG  
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