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TXN0512

型号:

TXN0512

描述:

高浪涌能力高通态电流高稳定性和可靠性[ HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY ]

品牌:

STMICROELECTRONICS[ ST ]

页数:

5 页

PDF大小:

73 K

TXN/TYN 0512 --->  
TXN/TYN 1012  
SCR  
FEATURES  
.
.
.
.
HIGH SURGE CAPABILITY  
HIGH ON-STATE CURRENT  
HIGH STABILITY AND RELIABILITY  
TXN Serie :  
INSULATED VOLTAGE = 2500V  
(UL RECOGNIZED : E81734)  
(RMS)  
DESCRIPTION  
The TYN/TXN 0512 ---> TYN/TXN 1012 Family  
of Silicon Controlled Rectifiers uses a high per-  
formance glass passivated technology.  
G
A
K
This general purpose Family of Silicon Controlled  
Rectifiers is designed for power supplies up to  
400Hz on resistive or inductive load.  
TO220AB  
(Plastic)  
ABSOLUTE RATINGS (limiting values)  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(180° conduction angle)  
TXN  
TYN  
Tc=80°C  
Tc=90°C  
12  
A
T(RMS)  
I
Average on-state current  
(180° conduction angle,single phase circuit)  
TXN  
TYN  
Tc=80°C  
Tc=90°C  
8
A
A
T(AV)  
I
Non repetitive surge peak on-state current  
( Tj initial = 25°C )  
tp=8.3 ms  
tp=10 ms  
tp=10 ms  
125  
120  
72  
TSM  
2
I t  
2
2
A s  
I t value  
dI/dt  
Critical rate of rise of on-state current  
100  
A/µs  
Gate supply : I = 100 mA di /dt = 1 A/µs  
G
G
Tstg  
Tj  
Storage and operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
°C  
°C  
Tl  
Maximum lead temperature for soldering during 10 s at 4.5 mm  
from case  
260  
°C  
Symbol  
Parameter  
TYN/TXN  
Unit  
0512  
112  
212  
412  
612  
600  
812  
1012  
1000  
V
V
Repetitive peak off-state voltage  
Tj = 125 °C  
50  
100  
200  
400  
800  
V
DRM  
RRM  
1/5  
April 1995  
TXN/TYN 0512 ---> TXN/TYN 1012  
THERMAL RESISTANCES  
Symbol  
Parameter  
Value  
60  
Unit  
°C/W  
°C/W  
Rth (j-a)  
Junction to ambient  
Rth (j-c) DC Junction to case for DC  
TXN  
TYN  
3.5  
2.5  
GATE CHARACTERISTICS (maximum values)  
P
= 1W  
P
GM  
= 10W (tp = 20 µs)  
I
= 4A (tp = 20 µs)  
V
RGM  
= 5 V.  
G (AV)  
FGM  
ELECTRICAL CHARACTERISTICS  
Symbol  
Test Conditions  
V =12V (DC) R =33Ω  
Value  
15  
Unit  
mA  
V
I
Tj=25°C  
Tj=25°C  
Tj= 125°C  
Tj=25°C  
MAX  
GT  
D
L
V
V =12V (DC) R =33Ω  
MAX  
MIN  
TYP  
1.5  
0.2  
2
GT  
GD  
D
L
V
V =V  
R =3.3kΩ  
V
D
DRM  
DRM  
L
tgt  
V =V  
I
= 40mA  
µs  
D
G
dI /dt = 0.5A/µs  
G
I
I = 1.2 I  
GT  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj=25°C  
Tj= 125°C  
Tj= 125°C  
TYP  
MAX  
MAX  
MAX  
50  
30  
mA  
mA  
V
L
G
I
I = 100mA gate open  
T
H
V
ITM= 24A tp= 380µs  
1.6  
0.01  
3
TM  
I
I
V
Rated  
Rated  
mA  
DRM  
RRM  
DRM  
V
RRM  
dV/dt  
tq  
Linear slope up to V =67%V  
D
gate open  
MIN  
TYP  
200  
V/µs  
µs  
DRM  
V =67%V  
dI /dt=30 A/µs  
TM  
I
= 24A V = 25V  
Tj= 125°C  
70  
D
DRM  
TM  
R
dV /dt= 50V/µs  
D
2/5  
TXN/TYN 0512 ---> TXN/TYN 1012  
Fig.1 : Maximum average power dissipation versus  
Fig.2 : Correlation between maximum average power  
average on-state current (TXN).  
dissipation and maximum allowable temperatures (T  
amb  
for different thermal resistances heatsink +  
contact (TXN).  
and T  
)
case  
Fig.3 : Maximum average power dissipation versus  
average on-state current (TYN).  
Fig.4 : Correlation between maximum average power  
dissipation and maximum allowable temperatures (T  
amb  
for different thermal resistances heatsink +  
contact (TYN).  
and T  
)
case  
Fig.5  
:
Average on-state current versus case  
Fig.6  
:
Average on-state current versus case  
temperature (TXN).  
temperature (TYN).  
3/5  
TXN/TYN 0512 ---> TXN/TYN 1012  
Fig.7 : Relative variation of thermal impedance versus  
Fig.8 : Relative variation of gate trigger current versus  
pulse duration.  
junction temperature.  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
1E+2 5E+2  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
Fig.9 : Non repetitive surge peak on-state current  
Fig.10 : Non repetitive surge peak on-state current for  
versus number of cycles.  
a sinusoidal pulse with width : t 10 ms, and  
corresponding value of I t.  
2
Fig.11 : On-state characteristics (maximum values).  
4/5  
TXN/TYN 0512 ---> TXN/TYN 1012  
PACKAGE MECHANICAL DATA  
TO220AB Plastic  
REF.  
DIMENSIONS  
Millimeters Inches  
Min. Max. Min. Max.  
A
H
G
A
B
C
D
F
G
H
I
J
L
M
N
O
P
10.00 10.40 0.393 0.409  
15.20 15.90 0.598 0.625  
13.00 14.00 0.511 0.551  
J
I
D
B
C
6.20  
3.50  
2.65  
4.40  
3.75  
1.23  
0.49  
2.40  
4.80  
1.14  
0.61  
6.60 0.244 0.259  
4.20 0.137 0.165  
2.95 0.104 0.116  
4.60 0.173 0.181  
3.85 0.147 0.151  
1.32 0.048 0.051  
0.70 0.019 0.027  
2.72 0.094 0.107  
5.40 0.188 0.212  
1.70 0.044 0.066  
0.88 0.024 0.034  
F
L
O
P
M
= N =  
Cooling method : by conduction (method C)  
Marking : type number  
Weight : 2.3 g  
Recommended torque value : 0.8 m.N.  
Maximum torque value : 1 m.N.  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability  
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may  
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.  
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all  
information previously supplied.  
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems  
without express written approval of SGS-THOMSON Microelectronics.  
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-  
lands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.  
5/5  
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