VTP Process Photodiodes
VTP6060
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE AREA: .032 in2 (20.6 mm2)
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. Cathode is
common to the case. These diodes exhibit low
dark current under reverse bias and fast speed
of response.
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP6060
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
120
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850
2850 K
200
.20
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 15 V
940 nm
35
60
D
R
Shunt Resistance
100
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.14
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
400
50
1150
nm
range
λ
925
140
±45
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.9 x 10 (Typ.)
12
2.3 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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