VTP Process Photodiodes
VTP3410LA
PACKAGE DIMENSIONS inch (mm)
CASE 50A LONG T-1
CHIP ACTIVE AREA: .0011 in2 (0.684 mm2)
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a long T-
ABSOLUTE MAXIMUM RATINGS
1, endlooking package. The package material is
infrared transmitting (blocking visible light).
These diodes exhibit low dark current under
reverse bias and fast speed of response.
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP3410LA
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
15
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
22
.26
µA
%/°C
mV
SC
TC I
SC
V
Open Circuit Voltage
Temperature Coefficient
H = 100 fc, 2850 K
2850 K
350
-2.0
OC
TC V
V
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 50 V
H = 0, V = 10 mV
H = 0, V = 3 V
940 nm
35
25
D
R
Shunt Resistance
10
GΩ
SH
C
Junction Capacitance
Responsivity
pF
J
2
Re
.013
.55
A/(W/cm )
A/W
S
Sensitivity
@ Peak
R
λ
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
700
30
1150
nm
range
λ
925
140
±20
nm
p
V
V
BR
1/2
θ
Degrees
W ⁄ Hz
cm Hz / W
-13
NEP
D*
1.9 x 10 (Typ.)
11
5.3 x 10 (Typ.)
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
54
