VTP Process Photodiodes
VTP1188S
PACKAGE DIMENSIONS inch (mm)
CASE 12 LENSED CERAMIC
CHIP ACTIVE AREA: .017 in2 (1.1 mm2)
ABSOLUTE MAXIMUM RATINGS
PRODUCT DESCRIPTION
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
Large area planar silicon photodiode mounted
on a two lead ceramic substrate. A clear molded
lens is used to increase sensitivity. Low junction
capacitance permits fast response time.
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP11188S
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
UNITS
Min.
13
Typ.
Max.
I
Short Circuit Current
I Temperature Coefficient
SC
H = 100 fc, 2850 K
2850 K
200
.20
µA
%/°C
µA
SC
TC I
SC
2
I
Short Circuit Current
Open Circuit Voltage
100 µW/cm , 880 nm
25
30
SC
V
H = 100 fc, 2850 K
2850 K
.33
-2.0
3
mV
OC
TC V
V
Temperature Coefficient
mV/°C
nA
OC
OC
I
Dark Current
H = 0, VR = 10 mV
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V =0 V
D
R
Shunt Resistance
67
GΩ
SH
TC R
R
Temperature Coefficient
-11
.18
%/°C
nF
SH
SH
C
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
.30
J
λ
400
1100
nm
range
λ
925
.55
nm
p
S
@ Peak
A/W
R
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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