.040" NPN Phototransistors
VTT9002, 9003
Clear Epoxy TO-106 Ceramic Package
PACKAGE DIMENSIONS inch (mm)
CASE 8 TO-106 (FLAT)
CHIP TYPE: 40T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A medium area high sensitivity NPN silicon
phototransistor in a recessed TO-106 ceramic package.
The chip is protected with a layer of clear epoxy. The base
connection is brought out allowing conventional transistor
biasing. These devices are spectrally matched to any of
PerkinElmer IREDs.
Maximum Temperatures
Storage Temperature:
Operating Temperature:
-20°C to 70°C
-20°C to 70°C
Continuous Power Dissipation:
Derate above 30°C:
100 mW
2.5 mW/°C
Maximum Current:
25 mA
260°C
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Light Current
Dark Current
Rise/Fall Time
t /t
Angular
l
l
V
V
V
CE(SAT)
C
CEO
BR(CEO)
BR(ECO)
R F
Response θ
1/2
Part Number
l = 100 µA
l = 100 µA
H = 0
l = 1.0 mA
H = 400 fc
l = 1.0 mA
C
C
E
C
mA
H = 0
H
H = 0
R = 100 Ω
L
2
fc (mW/cm )
= 5.0 V
(nA)
V
CE
V
CE
Min.
Max.
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
Max. (Volts)
VTT9002
VTT9003
2.0
5.0
—
—
100 (5)
100 (5)
100
100
10
10
30
30
6.0
6.0
0.55
0.55
4.0
6.0
±50°
±50°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
100
