.025" NPN Phototransistors
VTT1222W, 23W
Clear T-1¾ (5 mm) Plastic Package
PACKAGE DIMENSIONS inch (mm)
CASE 26W T-1¾ (5 mm) WIDE ANGLE
CHIP TYPE: 25T
PRODUCT DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
A small area high speed NPN silicon phototransistor
mounted in a 5 mm diameter lensed, end looking,
transparent plastic package. Detectors in this series have
Maximum Temperatures
Storage Temperature:
Operating Temperature:
-40°C to 100°C
-40°C to 100°C
a half power acceptance angle (
θ ) of 40°. These
1/2
devices are spectrally and mechanically matched to the
VTE12xxW series of IREDs.
Continuous Power Dissipation:
Derate above 30°C:
50 mW
0.71 mW/°C
Maximum Current:
25 mA
Lead Soldering Temperature:
260°C
(1.6 mm from case, 5 sec. max.)
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Collector
Breakdown
Emitter
Breakdown
Saturation
Voltage
Light Current
Dark Current
Rise/Fall Time
t /t
Angular
l
l
V
V
V
Response
C
CEO
BR(CEO)
BR(ECO)
CE(SAT)
R F
Part Number
θ
1/2
l = 100 µA
l = 100 µA
H = 0
l = 1.0 mA
H = 400 fc
l = 1.0 mA
C
C
E
C
mA
H = 0
H
H= 0
R = 100 Ω
L
2
fc (mW/cm )
= 5.0 V
(nA)
V
CE
V
CE
Min.
Max.
Volts, Min.
Volts, Min.
Volts, Max.
µsec, Typ.
Typ.
Max. (Volts)
VTT1222W
VTT1223W
0.9
1.5
—
—
100 (5)
100 (5)
10
10
20
20
50
40
6.0
6.0
0.25
0.25
2.0
3.0
±40°
±40°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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