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8P002SRA0305I15

型号：

8P002SRA0305I15

品牌：

WEDC[ WHITE ELECTRONIC DESIGNS CORPORATION ]

页数：

10 页

PDF大小：

111 K

下载PDF手册
PCMCIA SRAM Memory Card  
SRA Series  
SRAM Memory Card 256KB through 8MB  
General Description  
Features  
• High Performance SRAM memory Card  
The WEDC SRAM Series (SRA) memory cards offer a  
high performance nonvolatile storage solution for code  
and data storage, disk caching, and write intensive  
mobile and embedded applications.  
• Single 5 Volt Supply  
- (3.3V/5V operation is available as an option)  
• Fast Access times: 150ns  
Packaged in PCMCIA type I or type II housing (type II  
for cards with extended battery backup time), the  
WEDC SRAM SRA series is based on 1 or 4Mbit  
SRAM memories, providing densities from 256  
Kilobytes to 8 Megabytes.  
• x8/x16 PCMCIA standard interface  
• Low Power CMOS technology provides very low  
power and reliable data retention characteristics  
- standby current < 100µA typical  
The SRA series of SRAM memory cards requires a 5V  
power supply and operates at speeds to 150ns. The  
cards are based on advanced CMOS technology  
providing very low power and reliable data retention  
• Rechargeable Lithium battery with recharge circuitry  
- eliminates the need for replaceable batteries  
- standby current during recharge typically < 2mA  
- battery backup time  
•7 months - type I card  
characteristics. WEDC’s SRAM cards contain  
a
•18 months - type II card  
rechargeable lithium battery and recharge circuitry,  
eliminating the need for replaceable batteries found in  
many SRAM cards.  
typical based on 4MB (lower densities will  
have greater storage times)  
• Unlimited write cycles, no endurance issues  
WEDC’s standard cards are shipped with WEDC’s  
SRAM Logo. Cards are also available with blank  
housings (no Logo). The blank housings are available  
in both a recessed (for label) and flat housing. Please  
contact WEDC sales representative for further  
information on Custom artwork.  
• Optional Features:  
• 2KB EEPROM attribute memory containing  
CIS  
• Optional Hardware Write Protect switch  
• PC Card Standard Type I or Type II Form Factor  
Block Diagram  
4MB SRAM Card Shown  
[A1..A19]  
address  
buffer  
SRAM  
SRAM  
512K x 8  
512K x 8  
SRAM  
SRAM  
[A20..A22]  
512K x 8  
512K x 8  
/CSHi  
/CSLi  
SRAM  
512K x 8  
SRAM  
512K x 8  
+
+
+ +  
+
decoder  
and  
CE1#  
CE2#  
WE#  
OE#  
REG#  
A0  
/CSHi  
control  
logic  
SRAM  
512K x 8  
SRAM  
512K x 8  
/CS-A  
/RD  
/WR  
CTRL  
/RD  
/WR  
[A1..A11]  
/CS-A  
/RD  
/WR  
S1  
ATTRIBUTE  
MEMORY  
Vcc  
WP  
Write Prot  
Switch  
VS1  
VS2  
GND  
NC  
NC  
CTRL  
I/O BUFFER  
[DO..D7]  
[D8..D15]  
[DO..D7]  
[D8..D15]  
Vcc  
+
Notes: 1. pull down resistor (min 100k)  
2. pull up resistor (min 10k)  
Power Management  
and  
BVD1  
BVD2  
Battery Control  
to internal  
power  
supply  
+
Lithium Bat.  
1
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Pinout  
Pin Signal name I/O  
Function  
Ground  
Data bit 3  
Data bit 4  
Data bit 5  
Active  
Pin Signal name I/O  
Function  
Ground  
Active  
LOW  
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
GND  
DQ3  
DQ4  
DQ5  
DQ6  
DQ7  
CE1#  
A10  
OE#  
A11  
A9  
35  
36  
37  
38  
39  
40  
41  
42  
43  
44  
45  
46  
47  
48  
49  
50  
51  
52  
53  
54  
55  
56  
57  
58  
59  
60  
61  
62  
63  
64  
65  
66  
67  
68  
GND  
CD1#  
DQ11  
DQ12  
DQ13  
DQ14  
DQ15  
CE2#  
VS1  
N.C.  
N.C.  
A17  
A18  
A19  
A20  
A21  
Vcc  
Vpp2  
A22  
A23  
A24  
A25  
VS2  
N.C.  
Wait#  
N.C.  
REG#  
BVD2  
BVD1  
DQ8  
DQ9  
DQ10  
CD2#  
GND  
I/O  
I/O  
I/O  
I/O  
I/O  
I
I
I
I
I
I
I
I
O
I/O  
I/O  
I/O  
I/O  
I
Card Detect 1  
Data bit 11  
Data bit 12  
Data bit 13  
Data bit 14  
Data bit 15  
Card Enable 2  
Voltage Sense 1  
Data bit 6  
Data bit 7  
Card enable 1  
Address bit 10  
Output enable  
Address bit 11  
Address bit 9  
Address bit 8  
Address bit 13  
Address bit 14  
Write Enable  
Ready/Busy  
Supply Voltage  
Prog. Voltage  
Address bit 16  
Address bit 15  
Address bit 12  
Address bit 7  
Address bit 6  
Address bit 5  
Address bit 4  
Address bit 3  
Address bit 2  
Address bit 1  
Address bit 0  
Data bit 0  
LOW  
LOW  
I
O
LOW  
N.C.  
A8  
I
I
I
I
I
Address bit 17 256KB(2)  
Address bit 18 512KB(2)  
A13  
A14  
WE#  
Address bit 19  
Address bit 20  
Address bit 21  
Supply Voltage  
Prog. Voltage  
1MB(2)  
2MB(2)  
4MB(2)  
I
LOW  
N.C.  
16 RDY/BSY#  
O
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
Vcc  
Vpp1  
A16  
A15  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
WP  
GND  
N.C.  
N.C.  
I
I
I
I
I
I
I
I
I
I
I
I/O  
I/O  
I/O  
O
Address bit 22 8MB(2,4)  
N.C.  
N.C.  
N.C.  
O
O
Voltage Sense 2  
N.C.  
Extended Bus Cycle Low  
I
O
O
I/O  
I/O  
O
Attrib Mem Select  
Bat. Volt. Detect 2  
Bat. Volt. Detect 1  
Data bit 8  
Low  
(3)  
Data bit 1  
Data bit 2  
Write Potect  
Ground  
Data bit 9  
Data bit 10  
Card Detect 2  
Ground  
HIGH  
O
LOW  
Notes:  
1. CD1# and CD2# are grounded internal to PC Card.  
2. Shows density for which specified address bit is MSB. Higher order address bits are  
no connects (i.e., 1MB A19 is MSB, A20 - A21 are NC).  
3. BVD1 is an open drain output with a 10K ohm internal pull-up resistor.  
4. Address bit 22 is used for the 8MB cards as well as the 6MB Cards.  
2
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Mechanical  
Type I  
Interconnect area  
3.0mm MIN  
1.6mm ± 0.05  
(0.063”)  
10.0mm MIN  
(0.400”)  
1.0mm ± 0.05  
(0.039”)  
Substrate area  
54.0mm ± 0.10  
(2.126”)  
85.6mm ± 0.20  
(3.370”)  
1.0mm ± 0.05  
(0.039”)  
10.0mm MIN  
(0.400”)  
3.3mm ± T1 (0.130”)  
T1=0.10mm interconnect area  
T1=0.20mm substrate area  
Type II  
1.6mm ± 0.05  
0.063”  
85.6mm ± 0.20  
3.370”  
1.0mm ±0.05  
0.039’  
3.0mm  
MIN.  
Substrate area  
54.0mm ± 0.10  
2.126”  
1.0mm ±0.05  
0.039’  
10.0mm MIN  
0.400”  
Interconnect area  
5.0mm ± T1  
0.197”  
3
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Card Signal Description  
Symbol  
A0 - A25  
Type  
INPUT  
Name and Function  
ADDRESS INPUTS: A0 through A25 enable direct addressing of up  
to 64MB of memory on the card. Signal A0 is not used in word access  
mode. A25 is the most significant bit. (address pins used are based on  
card density,see pinout for highest used address pin)  
DATA INPUT/OUTPUT: DQ0 THROUGH DQ15 constitute the  
bi-directional databus. DQ0 - DQ7 constitute the lower (even) byte and  
DQ8 - DQ15 the upper (odd) byte. DQ15 is the MSB.  
CARD ENABLE 1 AND 2: CE1# enables even byte accesses, CE2#  
enables odd byte accesses. Multiplexing A0, CE1# and CE2# allows 8-  
bit hosts to access all data on DQ0 - DQ7.  
DQ0 - DQ15  
CE1#, CE2#  
INPUT/OUT  
PUT  
INPUT  
OE#  
WE#  
INPUT  
INPUT  
OUTPUT ENABLE: Active low signal enabling read data from the  
memory card.  
WRITE ENABLE: Active low signal gating write data to the memory  
card.  
RDY/BSY#  
CD1#, CD2#  
OUTPUT  
OUTPUT  
READY/BUSY OUTPUT: Not used for SRAM cards  
CARD DETECT 1 and 2: Provide card insertion detection. These  
signals are connected to ground internally on the memory card. The  
host socket interface circuitry shall supply 10K-ohm or larger pull-up  
resistors on these signal pins.  
WP  
OUTPUT  
N.C.  
WRITE PROTECT: Follows hardware Write Protect Switch. When  
Switch is placed in on position, signal is pulled high (10K ohm). When  
switch is off signal is pulled low.  
PROGRAM/ERASE POWER SUPPLY: Not used for SRAM  
cards.  
VPP1, VPP2  
VCC  
GND  
CARD POWER SUPPLY: 5.0V for all internal circuitry.  
GROUND: for all internal circuitry.  
REG#  
INPUT  
ATTRIBUTE MEMORY SELECT : only used with cards built with  
optional attribute memory.  
RST  
INPUT  
RESET: Not used for SRAM cards  
WAIT#  
OUTPUT  
WAIT: This signal is pulled high internally for compatibility. No wait  
states are generated.  
BVD1, BVD2  
OUTPUT  
BATTERY VOLTAGE DETECT: Provides status of Battery  
voltage.  
BVD2 = BVD1 = Voh (battery voltage is guaranteed to retain data)  
BVD2 = Vol, BVD1 = Voh (data is valid, battery recharge required)  
BVD2 = BVD1 = Vol (data may no longer be valid, battery requires  
extended recharge)  
VS1, VS2  
OUTPUT  
VOLTAGE SENSE: Notifies the host socket of the card's VCC  
requirements. VS1 and VS2 are open to indicate a 5V, 16 bit card has  
been inserted.  
RFU  
N.C.  
RESERVED FOR FUTURE USE  
NO INTERNAL CONNECTION TO CARD: pin may be driven  
or left floating  
FUNCTIONAL TRUTH TABLE  
Common Memory  
Attribute Memory  
/REG D15-D8 D7-D0  
High-Z  
READ function  
Function Mode  
Standby Mode  
Byte Access (8 bits)  
/CE2 /CE1 A0  
/OE /WE  
/REG D15-D8  
D7-D0  
High-Z  
H
H
H
L
H
L
L
X
L
H
X
X
X
L
L
L
L
X
H
H
H
H
X
H
H
H
H
High-Z  
X
L
L
L
L
High-Z  
High-Z Even-Byte  
High-Z Odd-Byte  
Odd-Byte Even-Byte  
Odd-Byte High-Z  
High-Z Even-Byte  
High-Z Not Valid  
Not Valid Even-Byte  
Word Access (16 bits)  
Odd-Byte Only Access  
WRITE function  
L
L
H
Not Valid  
High-Z  
Standby Mode  
Byte Access (8 bits)  
H
H
H
L
H
L
L
L
H
X
L
H
X
X
X
H
H
H
H
X
L
L
L
L
X
H
H
H
H
X
X
X
X
X
L
L
L
L
X
X
X
X
X
X
Even-Byte  
Odd-Byte  
Even-Byte  
X
Even-Byte  
X
Word Access (16 bits)  
Odd-Byte Only Access  
Odd-Byte Even-Byte  
Odd-Byte  
L
X
4
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Absolute Maximum Ratings (2)  
Notes:  
(1) During transitions, inputs may undershoot to  
-2.0V or overshoot to VCC +2.0V for periods  
less than 20ns.  
Operating Temperature TA (ambient)  
Commercial  
0°C to +60 °C  
(2) Stress greater than those listed under  
“Absolute Maximum ratings” may cause  
permanent damage to the device. This is a  
stress rating only and functional operation at  
these or any other conditions greater than those  
indicated in the operational sections of this  
specification is not implied. Exposure to  
absolute maximum rating conditions for  
extended periods may affect reliability.  
Industrial  
Storage Temperature  
Commercial  
Industrial  
Voltage on any pin relative to VSS  
VCC supply Voltage relative to VSS  
-40°C to +85 °C  
0°C to +60 °C  
-40°C to +85 °C  
-0.5V to VCC+0.5V (1)  
-0.5V to +7.0V  
DC Characteristics (1)  
CMOS Test Conditions: VIL = VSS ± 0.2V, VIH = VCC ± 0.2V  
Sym  
Parameter  
Density Notes Min  
Typ(3) Max  
Units Test Conditions  
ICC  
VCC Active Current  
64KB  
128KB  
256KB  
512KB  
1MB  
to  
1
90  
90  
90  
90  
110  
180  
180  
180  
180  
190  
mA  
VCC = 5.25V  
tcycle = 150ns  
8MB  
ICCS  
ILI  
VCC Standby Current  
Input Leakage Current  
Output Leakage Current  
All  
2,4  
5,6  
6
< 0.1  
< 1  
10  
mA  
VCC = 5.25V  
Control Signals = VCC  
VCC = VCCMAX  
Vin =VCC or VSS  
VCC = VCCMAX  
Vout =VCC or VSS  
All  
All  
±20  
µA  
ILO  
±20  
0.8  
µA  
VIL  
VIH  
Input Low Voltage  
Input High Voltage  
All  
All  
6
6
0
V
V
3.85  
VCC  
+0.5  
0.4  
VOL  
VOH  
Output Low Voltage  
Output High Voltage  
All  
All  
6
6
V
V
IOL = 3.2mA  
IOH = -2.0mA  
VCC-  
0.4  
VCC  
Notes:  
1. All currents are for x16 mode and are RMS values unless otherwise specified.  
2. Control Signals: CE1#, CE2#, OE#, WE#, REG#.  
3. Typical: VCC = 5V, T = +25C.  
4. ICCS includes battery recharge current. Value depends on battery discharge level. ICCS min is specified for fully  
charged battery. ICCS typical value is specified for battery discharge to 2.7V. ICCS max is specified for a fully  
discharged battery (0V). Battery will recharge to 1.5V in 20 sec.  
5. Values are the same for byte and word wide modes for all card densities.  
6. Exceptions: Leakage currents on CE1#, CE2#, OE#, REG# and WE# will be < 500 µA when VIN = GND due to  
internal pull-up resistors.  
Battery Characteristics  
SRA11-14  
Type I  
min 10  
SRA01-04  
Type I Type II  
min 10  
Parameter  
Battery Life  
Density  
All  
Notes  
(1)  
Units  
years  
Conditions  
Normal operation, T=25C  
256KB  
512KB, 1MB  
2MB  
(2)  
-
24  
18  
12  
7
60  
45  
30  
17  
17  
T=25C  
Battery backup time is a  
calculated value and is not  
32  
22  
12  
12  
Battery  
Backup Time  
months  
4MB  
6MB  
(typical) guaranteed. This should  
not be used to schedule  
7
battery recharging.  
8MB  
12  
-
-
Notes:  
1. Battery Life refers to functional lifetime of battery.  
2. Battery backup time is density and temperature dependent.  
5
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
AC Characteristics  
Read Timing Parameters  
150ns  
Min  
SYM  
Parameter  
Max  
Unit  
(PCMCIA)  
tRC  
Read Cycle Time  
150  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ta(A)  
Address Access Time  
150  
150  
75  
ta(CE)  
ta(OE)  
tsu(A)  
Card Enable Access Time  
Output Enable Access Time  
Address Setup Time  
20  
0
tsu(CE)  
th(A)  
Card Enable Setup Time  
Address Hold Time  
20  
20  
0
th(CE)  
tv(A)  
Card Enable Hold Time  
Output Hold from Address Change  
Output Disable Time from CE#  
Output Disable Time from OE#  
Output Enable Time from CE#  
Output Enable Time from OE#  
tdis(CE)  
tdis(OE)  
tdis(CE)  
tdis(CE)  
75  
75  
5
5
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Read Timing Diagram  
tc(R)  
th(A)  
ta(A)  
A[25::0], /REG  
/CE1, /CE2  
tv(A)  
ta(CE)  
tsu(CE)  
NOTE 1  
NOTE 1  
th(CE)  
ta(OE)  
tsu(A)  
tdis(CE)  
/OE  
tdis(OE)  
ten(OE)  
D[15::0]  
DATA VALID  
Note: Signal may be high or low in this area.  
6
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Write Timing Parameters  
150ns  
Min  
SYM  
Parameter  
Max  
Unit  
(PCMCIA)  
tCW  
Write Cycle Time  
150  
80  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tw(WE)  
Write Pulse Width  
tsu(A)  
Address Setup Time  
20  
tsu(A-WEH)  
tsu(CE-WEH)  
tsu(D-WEH)  
th(D)  
Address Setup Time for WE#  
Card Enable Setup Time for WE#  
Data Setup Time for WE#  
Data Hold Time  
100  
100  
50  
20  
trec(WE)  
tdis(WE)  
tdis(OE)  
Write Recover Time  
20  
Output Disable Time from WE#  
Output Disable Time from OE#  
Output Enable Time from WE#  
Output Enable Time from OE#  
Output Enable Setup from WE#  
Output Enable Hold from WE#  
Card Enable Setup Time from OE#  
Card Enable Hold Time  
75  
75  
ten(WE)  
5
5
tdis(OE)  
tsu(OE-WE)  
th(OE-WE)  
tsu(CE)  
10  
10  
0
th(CE)  
20  
Note: AC timing diagrams and characteristics are guaranteed to meet or exceed PCMCIA 2.1 specifications.  
Write Timing Diagram  
tc(W )  
A [2 5 ::0 ], /R E G  
tsu (A -W E H )  
tre c (W E )  
th (C E )  
tsu (C E -W E H )  
tsu (C E )  
/C E 1 , /C E 2  
N O T E  
1
N O T E  
1
/O E  
th (O E -W E )  
th (D )  
tw (W E )  
tsu (A )  
/W E  
tsu (O E -W E )  
tsu (D -W E H )  
D [1 5 ::0 ](D in )  
N O T E  
2
D A T A IN P U T  
td is (W E )  
td is (O E )  
te n (O E )  
te n (W E )  
N O T E  
2
D [1 5 ::0 ](D o u t)  
Notes:  
1. Signal may be high or low in this area.  
2. When the data I/O pins are in the output state, no signals shall be applied to the  
data pins (D15 - D0) by the host system.  
7
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
PRODUCT MARKING  
WED8P512SRA0100C15 C995 9915  
EDI  
Date code  
Lot code / trace number  
Part number  
Company Name  
Note:  
Some products are currently marked with our pre-merger company name/acronym (EDI). During our  
transition period, some products will also be marked with our new company name/acronym (WED).  
Starting October 2001 all PCMCIA products will be marked only with the WED prefix.  
PART NUMBERING  
8 P512SRA0100C15  
Card access time  
15  
25  
150ns  
250ns  
Temperature range  
C
I
Commercial 0°C to +70°C  
Industrial -40°C to +85°C  
Packaging option  
00  
Standard, type 1  
Card family and version  
- See Card Family and Version Info. for details (next page)  
Card capacity  
512  
512KB  
PC card  
P
Standard PCMCIA  
R
Ruggedized PCMCIA  
Card technology  
7
8
FLASH  
SRAM  
8
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
Ordering Information  
8P XXX SRA YY SS T ZZ  
where  
XXX:  
YY:  
SS:  
256*  
512*  
001  
002  
004  
256KB  
512KB  
1MB  
2MB  
4MB  
006  
008*  
6MB  
8MB  
*= Capacities available only in SRA01-SRA04  
01  
02  
03  
04  
no attribute memory, no Write Protect Switch  
with attribute memory, no Write Protect Switch  
with Write Protect Switch, no attribute memory  
with attribute memory, with Write Protect Switch  
11  
12  
13  
14  
Extended Battery Backup Time, no attribute memory, no Write Protect Switch  
Extended Battery Backup Time, with attribute memory, no Write Protect Switch  
Extended Battery Backup Time, with Write Protect Switch, no attribute memory  
Extended Battery Backup Time, with attribute memory, with Write Protect Switch  
00  
01  
02  
03  
04  
05  
WEDC SRAM Logo Type I  
Blank Housing,  
Blank Housing,  
WEDC SRAM Logo, Type II  
Blank Housing,  
Blank Housing,  
Type I  
Type I Recessed  
(8MB and extended battery backup time)  
(8MB and extended battery backup time)  
Type II  
Type II Recessed (8MB and extended battery backup time)  
T:  
C
I
Commercial  
Industrial  
ZZ:  
15  
150ns  
9
February 2002 Rev. 6  
PC Card Products  
PCMCIA SRAM Memory Card  
SRA Series  
REVISION HISTORY  
Version  
-001  
Date of revision  
23-Dec-98  
7-Feb-99  
Description  
Initial release  
-002  
-003  
-004  
-005  
page 5: 10 years to: min 10 years  
Company/Logo change  
Revised capacities and Edited Pinout  
Added Page 8, Changed Page Header  
Added SRA11-14 to Ordering Info, Added  
SRA11-14 to Battery Info  
May-99  
28-Sep-99  
1-Jun-00  
6-Feb-02  
-006  
Changed Page Header  
Filename: SRA Dsht Rev 6.ppt  
White Electronic Designs Corporation  
One Research Drive, Westborough, MA 01581, USA  
tel: (508) 366 5151  
fax: (508) 836 4850  
www.whiteedc.com  
10  
February 2002 Rev. 6  
PC Card Products  
厂商 型号 描述 页数 下载

WEDC

 		8P001SRA0100C15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0100I15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0103C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0104I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0202C15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0202I15 [ SRAM Card, 512KX16, 150ns, CMOS, CADR1-68 ] 10 页

WEDC

 		8P001SRA0203C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0203I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0204C15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

WEDC

 		8P001SRA0204I15 [ SRAM Card, 512KX16, 150ns, CMOS, CARD2-68 ] 10 页

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