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1T387

型号:

1T387

描述:

变容二极管[ Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

48 K

1T387  
Variable Capacitance Diode  
Description  
M-235  
The 1T387 is a variable capacitance diode  
designed for electronic tuning of BS and CS tuners  
using a super miniature package (SMVC).  
Features  
Super miniature package  
Low series resistance: 1.5Max. (f = 470MHz)  
Large capacitance ratio: 14.6 Typ.  
(C1/C25)  
Small leakage current: 10nA Max. (VR = 25V)  
Capacitance deviation in a matching group: within 6%  
Absolute Maximum Ratings (Ta = 25°C)  
Reverse voltage  
VR  
30  
35  
V
V
Peak reverse voltage  
VRM  
Applications  
(RL 10k)  
Electronic tuning of BS and CS tuners  
Operating temperature Topr  
–20 to +75  
°C  
°C  
Storage temperature  
Tstg –65 to +150  
Structure  
Silicon epitaxial planar type diode  
Electrical Characteristics  
(Ta = 25°C)  
Item  
Symbol  
VR  
Conditions  
IR = 1µA  
Min. Typ. Max. Unit  
Reverse voltage  
Reverse current  
30.0  
V
IR  
VR = 25V  
10.0  
9.44  
0.64  
nA  
pF  
pF  
C1  
VR = 1V, f = 1MHz  
VR = 25V, f = 1MHz  
7.84  
Diode capacitance  
C25  
0.54  
Capacitance ratio  
Series resistance  
C1/C25  
rs  
12.2 14.6  
VR = 5V, f = 470MHz  
1.30 1.50  
6.0  
Capacitance deviation in a matching group C  
VR = 1 to 25V, f = 1MHz  
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E00421-PS  
1T387  
Diode capacitance vs. Reverse voltage  
Reverse current vs. Ambient temperature  
10  
5
1000  
VR = 25V  
2
1
100  
0.5  
0.2  
0.1  
10  
–20  
50  
1
10  
20  
0
20  
40  
60  
80  
2
5
VR – Reverse voltage [V]  
Ta – Ambient temperature [°C]  
Forward voltage vs. Ambient temperature  
Reverse voltage vs. Ambient temperature  
0.90  
0. 80  
0.70  
0.60  
45  
40  
35  
30  
IF = 1mA  
IR = 10µA  
–20  
0
20  
40  
60  
80  
–20  
0
20  
40  
60  
80  
Ta – Ambient temperature [°C]  
Ta – Ambient temperature [°C]  
– 2 –  
1T387  
Diode capacitance vs. Ambient temperature  
Reverse current vs. Reverse voltage  
1.03  
100  
VR = 1V  
VR = 2V  
1.02  
1.01  
1.00  
0.99  
VR = 7V  
VR = 25V  
VR = 15V  
10  
Ta = 80°C  
Ta = 60°C  
1
0.98  
–20  
0
20  
40  
60  
80  
Ta – Ambient temperature [°C]  
Ta = 25°C  
0.1  
1
3
10  
30  
VR – Reverse voltage [V]  
Temperature coefficient of diode capacitance  
1000  
500  
200  
100  
50  
30  
1
2
5
10  
20  
50  
VR – Reverse voltage [V]  
– 3 –  
1T387  
Package Outline  
Unit: mm  
M-235  
+ 0.2  
– 0.1  
0.9 ± 0.1  
1.25  
+ 0.1  
– 0.05  
0.3  
0.2  
2
1
+ 0.1  
– 0.05  
0.3  
0 ± 0.05  
+ 0.1  
– 0.06  
0.11  
0° to 10°  
NOTE: Dimension “ ” does not include mold protrusion.  
SONY CODE  
M-235  
EIAJ CODE  
JEDEC CODE  
PACKAGE WEIGHT  
0.1g  
Marking  
CATHODE MARK  
2
Note  
B: Lot No. (Year and Month of manufacture)  
Year; Last one digit  
87  
B
Month; A, B, C (for Oct. to Dec.)  
1 to 9 (for Jan. to Sept.)  
1
– 4 –  
Sony Corporation  
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