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1T369

型号:

1T369

描述:

硅变容二极管[ Silicon Variable Capacitance Diode ]

品牌:

SONY[ SONY CORPORATION ]

页数:

4 页

PDF大小:

47 K

1T369  
Silicon Variable Capacitance Diode  
Description  
M-235  
The 1T369 is a super miniature package variable  
capacitance diode for a wide-band CATV.  
Features  
Super miniature package  
Small series resistance  
Large capacitance ratio  
rs=1.0  
(Max.)  
C2/C25=15.5 (Typ.)  
Capacitance deviation in a matching group  
2.0 % (Max.)  
Absolute Maximum Ratings (Ta=25 °C)  
Reverse voltage  
Operating temperature Topr  
Storage temperature  
VR  
34  
V
Applications  
–20 to +75  
°C  
Electronic tuning of wide-band CATV  
Tstg –65 to +150 °C  
Structure  
Silicon epitaxial planar type diode  
Electrical Characteristics  
(Ta=25 °C)  
Item  
Reverse current  
Reverse voltage  
Symbol  
IR  
Conditions  
Min.  
Typ.  
Max.  
10  
Unit  
nA  
V
VR=28 V  
VR  
IR=1 µA  
34  
C2  
VR=2 V, f=1 MHz  
VR=25 V, f=1 MHz  
39.5  
2.60  
14.5  
43.4  
2.80  
15.5  
47.4  
3.03  
17.0  
1.0  
pF  
pF  
Diode capacitance  
C25  
Capacitance ratio  
Series resistance  
C2/C25  
rs  
CD=14 pF, f=470 MHz  
C2 to C25  
Capacitance deviation in a  
matching group  
C  
2.0  
%
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
—1—  
E92903A82-TE  
1T369  
Example of Representative Characteristics  
Diode capacitance vs. Reverse voltage  
100  
Diode capacitance vs. Ambient temperature  
f=1MHz  
1.03  
1.02  
1.01  
1.00  
0.99  
0.98  
Ta=25°C  
f=1MHz  
VR=2V  
VR=7V  
VR=15V  
VR=25V  
10  
1
1
10  
100  
–20  
0
20  
40  
60  
80  
VR-Reverse voltage (V)  
Ta-Ambient temperature (°C)  
Temperature coefficient of diode capacitance  
f=1MHz  
Reverse breakdown voltage vs. Ambient temperature  
1000  
500  
50  
45  
40  
35  
30  
25  
IR=10µA  
200  
100  
50  
1
10  
50  
100  
VR-Reverse voltage (V)  
–20  
0
20  
40  
60  
80  
Ta-Ambient temperature (°C)  
—2—  
1T369  
Reverse current vs. Reverse voltage  
Reverse current vs. Ambient temperature  
100  
10  
1
1000  
100  
10  
Ta=60°C  
Ta=25°C  
VR=28V  
1
–20  
0.1  
1
10  
100  
0
20  
40  
60  
80  
VR-Reverse voltage (V)  
Ta-Ambient temperature (°C)  
—3—  
1T369  
Package Outline Unit : mm  
M-235  
+ 0.2  
– 0.1  
0.9 ± 0.1  
1.25  
+ 0.1  
– 0.05  
0.3  
0.2  
2
1
+ 0.1  
– 0.05  
0.3  
0 ± 0.05  
+ 0.1  
– 0.06  
0.11  
0° to 10°  
NOTE: Dimension “ ” does not include mold protrusion.  
SONY CODE  
M-235  
EIAJ CODE  
JEDEC CODE  
PACKAGE WEIGHT  
0.1g  
CATHODE MARK  
Marking  
2
Notes  
69  
B
1) B:Lot No.(Year and Month of manufacture)  
Year;Last one digit  
Month;A,B,C(for Oct. to Dec.)  
1 to 9(for Jan.to Sept.)  
1
—4—  
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